2SK3566

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV)

2SK3566
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance: RDS (ON) = 5.6 (typ.)

High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 720 V)
Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 900 V

Drain-gate voltage (RGS = 20 k) VDGR 900 V
Gate-source voltage VGSS 30 V
DC (Note 1) ID 2.5
1: Gate
Drain current Pulse (t = 1 ms) A 2: Drain
IDP 7.5 3: Source
(Note 1)
Drain power dissipation (Tc = 25C) PD 40 W
Single pulse avalanche energy
EAS 216 mJ JEDEC
(Note 2)
Avalanche current IAR 2.5 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 4 mJ TOSHIBA 2-10U1B
Channel temperature Tch 150 C Weight : 1.7 g (typ.)
Storage temperature range Tstg -55~150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics 2

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 3.125 C/W

Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W 1

Note 1: Please use devices on conditions that the channel temperature is below 150C.

Note 2: VDD = 90 V, Tch = 25C, L = 63.4 mH, IAR = 2.5 A, RG = 25

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature 3

This transistor is an electrostatic sensitive device. Please handle with caution.

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 2SK3566
Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 25 V, VDS = 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG = 10 A, VGS = 0 V 30 V
Drain cut-off current IDSS VDS = 720 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 900 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.5 A 5.6 6.4
Forward transfer admittance Yfs VDS = 20 V, ID = 1.5 A 1.0 2.0 S
Input capacitance Ciss 470
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 10 pF

Output capacitance Coss 50

10 V ID = 1.5 A VOUT
Rise time tr VGS 20
0V
Turn-on time ton RL = 60
50
Switching time 133 ns
Fall time tf 30
VDD
200 V

Turn-off time toff Duty <

= 1%, tw = 10 s 100

Total gate charge Qg 12

Gate-source charge Qgs VDD
400 V, VGS = 10 V, ID =2.5 A 7 nC

Gate-drain charge Qgd 5

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR 2.5 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP 7.5 A
Forward voltage (diode) VDSF IDR =2.5 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 2.5 A, VGS = 0 V, 720 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 3.6 C

Marking

K3566 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID VDS ID VDS
2 3
COMMON 8 COMMON
10
SOURCE 6 SOURCE
5.5 5.25 8
Tc = 25C 10 2.5 Tc = 25C

(A)
6
(A)

1.6
PULSE TEST PULSE TEST
5.5

DRAIN CURRENT ID
DRAIN CURRENT ID

2
1.2 5 5.25
1.5

0.8 5
4.75
1

4.75
4. 5
0.4
0.5 4. 5
VGS = 4 V
VGS = 4 V
0 0
0 4 8 12 16 20 24 0 12 24 36

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

5 40
VDS (V)

COMMON SOURCE
COMMON SOURCE
Tc = 25
VDS = 20 V
(A)

4 PULSE TEST
PULSE TEST 30
DRAIN CURRENT ID

DRAIN-SOURCE VOLTAGE

20 ID = 2.5 A

1.5
100 Tc = 55C 10
1
25

0.8
0 0
0 2 4 6 8 10 12 0 4 8 12 16 20

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

10 100
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = 25C
PULSE TEST

Tc = 55C
1 25
RDS (ON) ()

100
Yfs (S)

1
10
VGS = 10 V

0.1

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.01 1
0.01 0.1 1 10 0.01 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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 2SK3566

RDS (ON) Tc IDR VDS

20 10
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

DRAIN REVERSE CURRENT IDR

PULSE TEST 5 Tc = 25C
16 PULSE TEST
3
RDS (ON) ( )

12
ID = 1.5A

(A)
1

8
0.5
VGS = 10 V 0.8
0.3
4 1

10
VGS = 0V
3
0 0.1
80 40 0 40 80 120 160 0 0.4 0.8 1.2 1.6

CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE VDS Vth Tc

1000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

100
C

Coss 3
CAPACITANCE

Vth (V)

2
10
COMMON SOURCE
COMMON SOURCE
Crss VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25C PULSE TEST
1 0
0.1 1 10 100 80 40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT / OUTPUT

PD Tc CHARACTERISTICS
50 500 20
VDS (V)

(V)
DRAIN POWER DISSIPATION

VGS

40 400 16
VDS
DRAIN-SOURCE VOLTAGE

200
GATE-SOURCE VOLTAGE

30 300 VDD = 100 V 12

PD (W)

VGS

20 200 8
400 COMMON SOURCE
ID = 2.5 A
10 100 4
Tc = 25C
PULSE TEST

0 0 0
0 40 80 120 160 200 0 5 10 15 20

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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rth tw
10
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)

1 Duty=0.5

0.2

0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
0.01 T

Duty = t/T
Duty = t/T
Rth
Rth
(ch-c)
(ch-c)= 3.125C/W
= 1.25C/W
0.001
10 100 1 10 100 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100 250

200
(A)

AVALANCHE ENERGY

ID max (PULSED) *
10
DRAIN CURRENT ID

100 s *
EAS (mJ)

ID max (CONTINUOUS) * 150

1 ms *
1
DC OPERATION 100
Tc = 25C

50
0.1

SINGLE NONREPETITIVE PULSE Tc=25

CURVES MUST BE DERATED LINEARLY WITH 0

25 50 75 100 125 150
INCREASE IN TEMPERATURE. VDSS max
0.01
1 10 100 1000 10000 CHANNEL TEMPERATURE (INITIAL)
Tch (C)
DRAIN-SOURCE VOLTAGE VDS (V)

BVDSS
15 V
15 V IAR

VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 43.4mH 2 B V
VDSS DD

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 2SK3566

RESTRICTIONS ON PRODUCT USE 20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.

The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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