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December 23, 1947, Dr. S. William Shockley, Walter H. Brattain, and John
Bardeen demonstrated the amplifying action of the first transistor at the Bell
Telephone Laboratories
and one p type (npn transistor) layers of material or two p - and one n -type
layers of material
The emitter layer is heavily doped, with the base and collector only lightly
doped
the term bipolar reflects the fact that holes and electrons participate in the
device.
The minority-current component is called the leakage current and is given the
symbol Ico
The arrow in the graphic symbol defines the direction of emitter current
forward-biased.
In the dc mode the levels of IC and IE due to the majority carriers are related
factor
Two sets of characteristics are again necessary to describe fully the behavior
For linear (least distortion) amplification purposes, cutoff for the common-
In the dc mode the levels of IC and IB are related by a quantity called beta
factor
negative resistance characteristic - an increase in current is resulting in a
drop in voltage
purposes since it has a high input impedance and low output impedance,
Gordon E. Moore in1965, Moores law predicts that the transistor count of an
switches.
They are (1) of smaller size , (2) more lightweight , (3) more rugged , and (4)
more efficient . In addition, they have (1) no warm-up period , (2) no heater
The dc emitter current is always the largest current of a transistor, whereas the
base current is always the smallest. The emitter current is always the sum of the
other two.