U.N.M.S.

M
FACULTAD DE ING. ELECTRNICA, ELCTRICA Y DE TELECOMUNICACIONES

APELLIDOS Y NOMBRES MATRICULA

Snchez Casas, Carlos Alberto 15190153

CURSO TEMA

LABORATORIO DE DISPOSITIVOS ELECTRNICOS EL TRANSISTOR BIPOLAR NPN

INFORME FECHAS NOTA

PREVIO REALIZACIN ENTREGA

NUMERO

13 de Junio del
06 de Junio del 2016
07 2016

GRUPO PROFESOR

G2
Lunes de 10 am 12 pm ING. LUIS PARETTO QUISPE
I. TEMA: El transistor bipolar NPN. Caractersticas bsicas.

II. CUESTIONARIO PREVIO

TRANSISTOR NPN C548B

Descripcin y Colector a Base (v)

NPN Si 75
Aplicacin BVcbo
Emisor a Base (v)
Caso Estilo 6
BVebo
Diag. N T16 Hfe () 200
Corriente Colector Disipacin mxima del
0.6 0.5
Maxima (A) Ic colector (watts)
Colector a Emisor
40 Frecuencia (MHz) ft 300
(v) BVceo

1 = 56 K

2 = 22 K

= 220

= 1 K

1 = 0

12 22 12 22
= = = 3.385
56 + 22 k + 0 k 78
 (1 + 1)(2) (56 )(22 )
= = = 15.795
1 + 1 + 2 78

Para el Si:

= 0.6 = 200

3,385 0.6
= = 46.578
15795 + 200(220)

3,385 = 46.578 15.795 + 0,6 v + (46.578 + ) 220

= 9.268

12 = 9.268 1 + + 9.268 mA x 220

= 0.69304

=
= ( + )
= 220(46.578 + 9.268 ) = 2.0492

TABLA 2
R1 = 56K Ic(mA) Ib(A) Vce(v) Vbe(v) Ve(v)
TERICO 9.268 46.578 200 0.693 0,6 2.0492

Ahora cambiamos R1 a 68 k, y repetimos los pasos:

12 22 12 22
= = = 2.933
68 + 22 k + 0 k 90

(1 + 68)(2) (68 )(22 )

= = = 16.622
1 + 1 + 2 90
 2,933 0.6
= = 38.484
16622 + 200(220)

2.933 = 38.484 16,622 + 0,6 v + (38.484 + ) 220

= 7.658
12 = 7.658 1 + + 7.658 mA x 220
= 2.6572

=
= ( + )
= 220(38.484 + 7.658 ) = 1.69322 v

TABLA 3
R1 = 68K Ic(mA) Ib(A) Vce(v) Vbe(v) Ve(v)
TERICO 7.658 38.484 200 2.6572 0.6 1,69322

Aumentar la resistencia de P1 a 100 k, 250 k, 500 k y 1 M. Ver lo que

sucede pasa con las corrientes Ic e Ib y con el voltaje Vce.
Si: P1=100 k
12 22 12 22
= = = 1.389
68 + 22 k + 100 k 190

(1 + 68)(2) (168 )(22 )

= = = 19.4526
1 + 1 + 2 190

1,389 0.6
= = 12.4344
19452.6 + 200(220)

= 200 12.4344
= 2.4868

12 = 2.4868 mA 1 + + 2.4868 mA x 220

= 8.9661
Si: P1=250 K
12 22 12 22
= = = 0.776
68 + 22 k + 250 k 340

(1 + 68)(2) (318 )(22 )

= = = 20.576
1 + 1 + 2 340

0.776 0.6
= = 2.7254
20576 + 200(220)
= 200 2.7254
= 0.54509

12 = 0.54509 mA 1 + + 0.54509 mA x 220

= 11.33499

Si: P1= 500k

12 22 12 22
= = = 0.447
68 + 22 k + 500 k 590

(1 + 68)(2) (568 )(22 )

= = = 21.179
1 + 1 + 2 590

0.447 0
= = 6.858
21179 + 200(220)

= 200 6.858
= 1.3716

12 = 1.3716 1 + + 1.3716 x 220

= 10.3266
Si: P1=1M

12 22 12 22
= = = 0,242
68 + 22 k + 1000 k 1090

(1 + 68)(2) (1068 )(22 )

= = = 21.5559,
1 + 1 + 2 1090

0.242 0
= = 3.6915
21555.9 + 200(220)

= 200 3.6915
= 0.7383

12 = 0.7383 1 + + 0.7383 x 220

= 11.09927

TABLA 5
P1 100 K 250 K 500 K 1 M
Ic (mA) 2.4868 0.54509 1.3716 0.7383
Ib (A) 12.4344 2.7254 6.858 3.6915
Vce (v) 8.9661 11.33499 10.3266 11.09927