MMIS60R580P Datasheet

MMIS60R580P
600V 0.58 N-channel MOSFET

Description
MMIS60R580P is power MOSFET using magnachips advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.

Key Parameters Package & Internal Circuit

Parameter Value Unit D

VDS @ Tj,max 650 V
RDS(on),max 0.58
VTH,typ 3 V G
ID 8 A G
D
Qg,typ 18 nC S
S

Features
Low Power Loss by High Speed Switching and Low On-Resistance

100% Avalanche Tested

Green Package Pb Free Plating, Halogen Free

Applications
PFC Power Supply Stages

Switching Applications

Adapter

Motor Control

DC DC Converters

Ordering Information
Order Code Marking Temp. Range Package Packing RoHS Status
TO-251-VS
MMIS60R580PTH 60R580P -55 ~ 150 Tube Halogen Free
(IPAK-VS)

Mar. 2016 Revision 1.1 1 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

Absolute Maximum Rating (Tc=25 unless otherwise specified)

Parameter Symbol Rating Unit Note

Drain Source voltage VDSS 600 V

Gate Source voltage VGSS 30 V

8 A TC=25
Continuous drain current ID
5 A TC=100

Pulsed drain current(1) IDM 24 A

Power dissipation PD 70 W

Single - pulse avalanche energy EAS 170 mJ

MOSFET dv/dt ruggedness dv/dt 50 V/ns

Diode dv/dt ruggedness dv/dt 15 V/ns

Storage temperature Tstg -55 ~150

Maximum operating junction
Tj 150
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS

Thermal Characteristics

Parameter Symbol Value Unit

Thermal resistance, junction-case max Rthjc 1.8 /W

Thermal resistance, junction-ambient max Rthja 62.5 /W

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 MMIS60R580P Datasheet

Static Characteristics (Tc=25 unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Drain Source
V(BR)DSS 600 - - V VGS = 0V, ID=0.25mA
Breakdown voltage
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID=0.25mA
Zero Gate Voltage
IDSS - - 1 A VDS = 600V, VGS = 0V
Drain Current
Gate Leakage Current IGSS - - 100 nA VGS = 30V, VDS =0V
Drain-Source On
RDS(ON) - 0.53 0.58 VGS = 10V, ID = 2.5 A
State Resistance

Dynamic Characteristics (Tc=25 unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Input Capacitance Ciss - 575 -

VDS = 25V, VGS = 0V,
Output Capacitance Coss - 428 -
f = 1.0MHz
pF
Reverse Transfer Capacitance Crss - 25 -
Effective Output Capacitance VDS = 0V to 480V,
Co(er) - 18 -
Energy Related (3) VGS = 0V,f = 1.0MHz
Turn On Delay Time td(on) - 14 -

Rise Time tr - 34 -
VGS = 10V, RG = 25,
ns
VDS = 300V, ID = 8 A
Turn Off Delay Time td(off) - 48 -

Fall Time tf - 25 -

Total Gate Charge Qg - 18 -

VGS = 10V, VDS = 480V,
Gate Source Charge Qgs - 5 - nC
ID = 8 A
Gate Drain Charge Qgd - 7 -

Gate Resistance RG - 4.3 - VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

Mar. 2016 Revision 1.1 3 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

Reverse Diode Characteristics (Tc=25 unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

Continuous Diode Forward
ISD - - 8 A
Current
Diode Forward Voltage VSD - - 1.4 V ISD = 8 A, VGS = 0 V

Reverse Recovery Time trr - 303 - ns

ISD = 8 A
Reverse Recovery Charge Qrr - 2.4 - C di/dt = 100 A/s
VDD = 100 V
Reverse Recovery Current Irrm - 15.6 - A

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 MMIS60R580P Datasheet

Characteristic Graph

Mar. 2016 Revision 1.1 5 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

Mar. 2016 Revision 1.1 6 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

Mar. 2016 Revision 1.1 7 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

Test Circuit
Same type as DUT

VGS
100K Qg
10V
10V

+
Qgs Qgd
VDS
-

1mA DUT

10V

Charge

Fig15-1. Gate charge measurement circuit Fig15-2. Gate charge waveform

trr
DUT IFM 0.5 IRM
IF ta tb

+ 0.25 IRM
V
- DS
di/dt
IS L
0.75 IRM
IRM
Rg
10K +
Same type as DUT
VDD VR
-

Vgs 15V
VRM(REC)

Fig16-1. Diode reverse recovery test circuit Fig16-1. Diode reverse recovery test waveform
ID
DUT
VDS VDS
Rg
25
90%
RL

Vgs 10%
tp
+
VDD
- VGS
Td(on) tr Td(off) tf
ton toff

Fig17-1. Switching time test circuit for resistive load Fig17-2. Switching time waveform
IAS
DUT
VDS BVDSS
tp tAV
Rg

L IAS

Vgs VDD VDS(t)

tp
+
VDD
-

Rds(on) * IAS

Fig18-1. Unclamped inductive load test circuit Fig18-2. Unclamped inductive waveform

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 MMIS60R580P Datasheet

Physical Dimension

TO-251-VS, 3L (IPAK-VS)
Dimensions are in millimeters, unless otherwise specified

Mar. 2016 Revision 1.1 9 MagnaChip Semiconductor Ltd.

 MMIS60R580P Datasheet

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Mar. 2016 Revision 1.1 10 MagnaChip Semiconductor Ltd.