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Accurate modeling of MOSFET capacitance plays equally important role as that of the
DC model. This chapter describes the methodology and device physics considered in both
intrinsic and extrinsic capacitance modeling in BSIM3v3.2.2. Detailed model equations
are given in Appendix B. One of the important features of BSIM3v3.2 is introduction of a
new intrinsic capacitance model (capMod=3 as the default model), considering the finite
charge thickness determined by quantum effect, which becomes more important for
thinner Tox CMOS technologies. This model is smooth, continuous and accurate
throughout all operating regions.
Separate effective channel length and width are used for capacitance models.
The intrinsic capacitance models, capMod=0 and 1, use piece-wise equations.
capMod=2 and 3 are smooth and single equation models; therefore both charge and
capacitance are continous and smooth over all regions.
Threshold voltage is consistent with DC part except for capMod=0, where a long-
channel Vth is used. Therefore, those effects such as body bias, short/narrow channel
and DIBL effects are explicitly considered in capMod=1, 2, and 3.
Overlap capacitance comprises two parts: (1) a bias-independent component which
models the effective overlap capacitance between the gate and the heavily doped
source/drain; (2) a gate-bias dependent component between the gate and the lightly
doped source/drain region.
Bias-independent fringing capacitances are added between the gate and source as well
as the gate and drain.
acde Exponential coefficient for XDC for accumulation and deple- 1 (m/V)
tion regions
cgso Non-LDD region G/S overlap C per channel length Calculated F/m
cgdo Non-LDD region G/D overlap C per channel length Calculated F/m
(Lactive) and width (Wactive) when the gate to S/D region is at flat band voltage.
Lactiveand Wactive are defined by Eqs. (4.2.1) through (4.2.4).
(4.2.1)
Lactive = Ldrawn 2Leff
(4.2.2)
Wactive = Wdrawn 2Weff
(4.2.3)
Llc Lwc Lwlc
Leff = DLC+ L ln
+ Lwn + L ln Lwn
L W L W
(4.2.4)
Wlc Wwc Wwlc
Weff = DWC + W ln
+ Wwn + W ln Wwn
L W L W
The meanings of DWC and DLC are different from those of Wint and Lint in the I-
V model. Lactive and Wactive are the effective length and width of the intrinsic
device for capacitance calculations. Unlike the case with I-V, we assumed that
these dimensions have no voltage bias dependence. The parameter Leff is equal to
the source/drain to gate overlap length plus the difference between drawn and
actual POLY CD due to processing (gate printing, etching and oxidation) on one
side. Overall, a distinction should be made between the effective channel length
extracted from the capacitance measurement and from the I-V measurement.
Traditionally, the Leff extracted during I-V model characterization is used to gauge
a technology. However this Leff does not necessarily carry a physical meaning. It is
just a parameter used in the I-V formulation. This Leff is therefore very sensitive to
the I-V equations used and also to the conduction characteristics of the LDD
region relative to the channel region. A device with a large Leff and a small
parasitic resistance can have a similar current drive as another with a smaller Leff
but larger Rds. In some cases Leff can be larger than the polysilicon gate length
giving Leff a dubious physical meaning.
The accumulation charge and the substrate charge are associated with the
substrate while the channel charge comes from the source and drain
terminals
(4.3.1)
Qg = (Qsub + Qinv + Qacc )
Qb = Qacc + Qsub
Q = Q + Q
inv s d
The substrate charge can be divided into two components - the substrate
charge at zero source-drain bias (Qsub0), which is a function of gate to
substrate bias, and the additional non-uniform substrate charge in the
presence of a drain bias (Qsub). Qg now becomes
(4.3.2)
Q g = (Qinv + Qacc + Qsub0 + Qsub )
The total charge is computed by integrating the charge along the channel.
The threshold voltage along the channel is modified due to the non-
uniform substrate charge by
(4.3.3)
Vth ( y) = Vth (0) + (Abulk 1)Vy
(4.3.4)
Lactive Lactive
dV y
dy =
y
and
(4.3.5)
Wactiveeff Cox
Vgt bulk Vds Vds = Wactiveeff Cox (Vgt AbulkVy )Ey
A
I ds =
Lactive 2
(4.3.6)
2 2
Q c = W active L active C ox V gt Abulk V ds + Abulk V ds
2 Abulk
12 V gt V ds
2
2
V ds Abulk V ds
Q g = Q sub 0 + W active L active C ox V gt +
2 A
12 V gt bulk V ds
2
Q b = Q g Q c = Q sub + Q sub 0 + Q acc
where
(4.3.7)
The inversion charges are supplied from the source and drain electrodes
such that Qinv = Qs + Qd. The ratio of Qd and Qs is the charge partitioning
ratio. Existing charge partitioning schemes are 0/100, 50/50 and 40/60
(XPART = 0, 0.5 and 1) which are the ratios of Qd to Qs in the saturation
region. We will revisit charge partitioning in Section 4.3.4.
(4.3.8)
Qi
Cij =
V j
C
i
ij = C
j
ij =0
(4.3.9)
V gsteff ,cv
Vdsat ,iv < Vdsat ,cv < Vdsat ,iv Lactive
=
Abulk
(4.3.10a)
V gsteff ,cv
cdsat ,cv =
V dsat,cv
CLC
CLE
Abulk 1 +
L active
(4.3.10b)
Parameters noff and voffcv are introduced to better fit measured data above
subthreshold regions. The parameter Abulk is substituted Abulk0 in the long
channel equation by
(4.3.11)
CLC CLE
Abulk ' = Abulk 0 1 +
L
active
(4.3.11a)
A0 Leff B0
Abulk = 1 +
K1ox 1
+
2 V L +2 X X
Weff '+B1 1 + KetaVbseff
s bseff eff J dep
(4.3.12)
Q(Vgt ) = Q(Vgsteff,CV )
(4.3.13)
Vgsteff,CV
C(Vgt ) = C(Vgsteff,CV )
Vgs,ds,bs
(4.3.14)
{
VFBeff = vfb 0.5 V3 + V3 + 4 3vfb
2
} where V = vfb V
3 gs + Vbseff 3 ; 3 = 0.02V
(4.3.15)
vfb= Vth s K1ox s Vbseff
(4.3.16)
(
Qacc = Wactive Lactive Cox VFBeff vfb )
(4.3.17)
Qsub0 = WactiveLactiveCox
K
2
(
4 Vgs VFBeff Vgsteff,CV Vbseff )
1ox
1 + 1 +
2 K1ox
2
An effective Vds, Vcveff, is used to smooth out the transition between linear
and saturation regions. It affects the inversion charge.
(4.3.18)
{
Vcveff = Vdsat,cv 0.5 V4 + V4 + 4 4Vdsat,cv
2
} whereV = V 4 dsat,cv Vds 4; 4 = 0.02V
(4.3.19)
2 2
Abulk ' Abulk ' Vcveff
Qinv = Wactive LactiveCox Vgsteff,cv Vcveff +
2 Abulk '
12Vgsteff ,cv Vcveff
2
(4.3.20)
2
1 Abulk ' (1 A ' ) A ' V
Qsub = Wactive Lactive Cox Vcveff
bulk bulk cveff
2 A '
12Vgsteff ,cv bulk
Vcveff
2
Below is a list of all the three partitioning schemes for the inversion
charge:
(4.3.21)
Abulk ' 2 Vcveff
2
Wactive Lactive Cox Abulk '
Qs = Qd = 0.5Qinv = Vgsteff,cv Vcveff +
2 2 Abulk '
12Vgsteff,cv Vcveff
2
This is the most physical model of the three partitioning schemes in which
the channel charges are allocated to the source and drain terminals by
assuming a linear dependence on the position y.
(4.3.22)
Lactive
y
Q s = Wactive q c 1 dy
L active
0
Lactive
Q = W y
active q c dy
d
0
L active
(4.3.23)
2
A ' 3 3 15
2VgsteffCV bulk Vcveff
2
(4.3.24)
Qd =
Wactive LactiveCox
( ) (
V 3 5V cv2 A ' V +V cv A ' V 2 1 A ' V 3
2 gsteffcv ) (
bulk cveff )
gsteff bulk cveff gsteff bulk cveff
Abulk' 3 5
2Vgsteffcv Vcveff
2
charges in the saturation region to the source electrode. Notice that this
charge partitioning scheme will still give drain current spikes in the linear
region and aggravate the source current spike problem.
(4.3.25)
V ( )
2
Abulk ' Vcveff Abulk ' Vcveff
Qs = Wactive Lactive Cox +
gsteff,c
gstefcvf
2 4 Abulk '
24 Vgsteff,c Vcveff
gsteffcv 2
(4.3.26)
V ( )
2
3 Abulk ' Vcveff Abulk ' Vcveff
Qd = Wactive Lactive Cox gsteff,c
+
gsteffcv
2 4 Abulk '
8 V V
cveff
gsteff,c
gsteffcv
2
This section describes the concepts used in the charge-thichness model (CTM).
Appendix B lists all charge equations. A full report and anaylsis of the CTM model
can be found in [32].
N orm alized C harge D istribution
E 1 .0
E
0.15 A
C g g (F /c m )
0 .8
2
B D
0 .6
D
0 .4 C
0 .2
0.10
C -4 -3 -2 -1 0 1 2 3
V g s (V )
A T ox=30A
0.05 N sub=5e17cm
-3
0.00
0 20 40 60
D epth (A )
Figure 4-1. Charge distribution from numerical quantum simulations show significant
charge thickness at various bias conditions shown in the inset.
CTM is a charge-based model and therefore starts with the DC charge thicknss,
XDC. The charge thicknss introduces a capacitance in series with Cox as illustrated
in Figure 4-2, resulting in an effective Cox, Coxeff. Based on numerical self-
consistent solution of Shrodinger, Poisson and Fermi-Dirac equations, universal
and analytical XDC models have been developed. Coxeff can be expressed as
(4.4.1)
C ox Ccen
C oxeff =
Cox + C cen
where
si
Ccen =
X DC
Vgs
Figure 4-2. Charge-thickness capacitance concept in CTM. Vgse accounts for the poly
depletion effect.
(4.4.2)
0.25
1 N Vgs Vbs V fb
X DC = Ldebye expacde sub16
3 2 10 Tox
where XDC is in the unit of cm and (Vgs - Vbs - vfb) / Tox has a unit of MV/cm. The
model parameter acde is introduced for better fitting with a default value of 1. For
numerical statbility, (4.4.2) is replaced by (4.4.3)
(4.4.3)
X DC = X max
1
2
(
X0 + X 02 + 4 x X max )
where
X 0 = X max X DC x
(4.4.4)
7
1.9 10
XDC = [cm]
Vgsteff + 4(Vth vfb 2B )
0.7
1+
2Tox
represents the boundary conditions (the average of the electric fields at the top and
the bottom of the charge layers) of the Schrodinger and the Poisson equations.
-3
+ - Nsub=2e18cm
40
30 M odel
20
10
Figure 4-3. For all Tox and Nsub, modeled inversion charge thickness agrees with numerical
quantum simulations.
(4.4.5)
Vgsteff,cv Vgsteff,cv + 2K1ox 2B
= s 2B = t ln + 1
( )
moin K 2
1ox t
where the model parameter moin (defaulting to 15) is introduced for better fit to
different technologies. The inversion channel charge density is therefore derived
as
(4.4.6)
qinv = Coxeff (Vgsteff,cv )
Figure 4-4 illustrates the universality of CTM model by compariing Cgg of a SiON/
Ta2O5/TiN gate stack structure with an equivalent Tox of 1.8nm between data,
numerical quantum simulation and modeling [32].
10.0
Measured Q.M. simulation CTM
18A equivalent SiO2 thickness
7.5
Cgg (pF)
5.0 TiN
60A Ta2O5
2.5 8A SiON
p-Si
0.0
-2 -1 0 1 2 3
Vgs (V)
Figure 4-4. Universality of CTM is demonstrated by modeling the Cgg of 1.8nm equivalent
Tox NMOSFET with SiON/Ta2O5/TiN gate stack.
(4.5.1)
2 ox t poly
CF = ln1 +
Tox
(4.5.2)
(4.5.3)
2 si qN LDD
CKAPPA = 2
Cox
17
The typical value for NLDD is 5 10 cm-3.
(4.5.4)
(4.5.5)
V gd , overlap =
1
V gd + 1 (V + 1 ) + 4 1 , 1 = 0.02V
2
2
gd
(4.5.6)
Qoverlap , g = (Qoverlap , d + Qoverlap , s + (CGB 0 Lactive ) V gb )
CGD0 = (DLC*Cox) - CGD1 (if DLC is given and DLC > CGD1/Cox)