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ARY
LIMIN
.
ation change.
PRE e: Th
o t a fi
is is nic limits a
Notice parame
tr
re
ecific
nal sp subject to
CM400DY-50H
Som
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM400DY-50H
IC ................................................................... 400A
VCES ....................................................... 2500V
Insulated Type
2-elements in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
130
114
4 - M8 NUTS
570.25 570.25
20
C2 E2 C1 E1
E1 C2 C2
G2 G1
1240.25
140
40
E2 E1
CM C1 E2
CIRCUIT DIAGRAM
E1
E2(C1) G2
G1 C2
61.5 15
18 5.7 39.5
15
38
LABEL
30
28
5
Feb.1999
MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation change.
ecific
PRE e: Th
Notice parame
tr
o t a fi nal sp subject to
is is nic limits a
re CM400DY-50H
Som
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
Feb.1999
MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation change.
ecific
PRE e: Th
Notice parame
tr
o t a fi nal sp subject to
is is nic limits a
re CM400DY-50H
Som
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS
(TYPICAL) (TYPICAL)
800 800
Tj=25C VCE=10V
VGE=12V
COLLECTOR CURRENT IC (A)
500 500
VGE=15V
400 VGE=10V 400
VGE=20V
300 300
VGE=15V Tj = 25C
4 8
COLLECTOR-EMITTER
COLLECTOR-EMITTER
IC = 800A
3 6
IC = 400A
2 4
1 2
Tj = 25C IC = 160A
Tj = 125C
0 0
0 200 400 600 800 0 4 8 12 16 20
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj=25C
5
EMITTER CURRENT IE (A)
3
2
103
7
5
3
2
102
7
5
3
2
101
0 1 2 3 4 5
Feb.1999