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SO-8
D1 D2
S1 D1
G1 D1
G1 G2
S2 D2
G2 D2
S1 S2
Top View Top View
Internal Schematic P-Channel MOSFET P-Channel MOSFET
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD 1.15 W
Thermal Resistance, Junction to Ambient @TA = 25C RJA 109 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
Zero Gate Voltage Drain Current TJ = 25C IDSS - - -1.0 A VDS = -16V, VGS = 0V
Gate-Source Leakage IGSS - - 100 nA VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -0.45 - -1.1 V VDS = VGS, ID = -250A
- 55 75 VGS = -4.5V, ID = -4.8A
Static Drain-Source On-Resistance RDS (ON) m
- 76 110 VGS = -2.5V, ID = -1A
Forward Transfer Admittance |Yfs| - 10 - S VDS = -9V, ID = -3.4A
Diode Forward Voltage VSD - -0.8 -1.2 V VGS = 0V, IS = -2A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 608.4 - pF
VDS = -6V, VGS = 0V
Output Capacitance Coss - 81.5 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 72.4 - pF
Gate Resistance Rg - 44.91 - VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg - 6.5 - nC
VDS = -10V, VGS = -4.5V,
Gate-Source Charge Qgs - 0.9 - nC
ID = -3.2A
Gate-Drain Charge Qgd - 1.5 - nC
Turn-On Delay Time tD(on) - 12.45 - ns
Turn-On Rise Time tr - 10.29 - ns VDS = -10V, VGS = -4.5V,
Turn-Off Delay Time tD(off) - 46.52 - ns RL = 10, RG = 1, ID = -1A
Turn-Off Fall Time tf - 22.19 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.
10 VGS = -4.5V 10
VGS = -8.0V
VGS = -3.0V
VGS = -2.5V
8 VDS = -5V
8
VGS = -2.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
6 6
4 4
TA = 150C
VGS = -1.5V
2 2 T A = 125C
TA = 85C
T A = 25C
0.20
0.12
0.15 TA = 150C
NEW PRODUCT
0.08 TA = 125C
T A = 85C
0.10 -VGS = 1.8V
TA = 25C
-VGS = 2.5V
0.04 T A = -55C
0.05 -VGS = 4.5V
0 0
0.1 1 10 0 2 4 6 8 10
-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature
1.7 0.16
0.12
RDS(ON), DRAIN-SOURCE
1.3
-VGS = 2.5V
-ID = 5.5A
1.1 0.08
-VGS = 5.0V
-ID = 10A
0.9
-VGS = 5.0V
0.04 -ID = 10A
-VGS = 2.5V
0.7
-ID = 5.0A
0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature
1.6 10
VGS(TH), GATE THRESHOLD VOLTAGE (V)
8
-IS, SOURCE CURRENT (A)
1.2
6 TA = 25C
4
-ID = 250A
0.4
2
0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA, AMBIENT TEMPERATURE (C) -VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current
Ciss T A = 150C
1,000
C, CAPACITANCE (pF)
TA = 125C
NEW PRODUCT
Crss TA = 85C
10
TA = 25C
10 1
0 4 8 12 16 20 0 4 8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
1
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 156C/W
D = 0.02
0.01
D = 0.01 P(pk)
t1
t2
D = 0.005
T J - T A = P * R JA(t)
D = Single Pulse Duty Cycle, D = t1/t2
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Marking Information
Top View
8 5
Logo
G9933UD Part no.
YY WW
Xth week: 01 ~ 53
Year: 09 = 2009
1 4
SO-8
NEW PRODUCT
0.254
E1 E A1 0.10 0.20
Gauge Plane A2 1.30 1.50
A1 Seating Plane
L A3 0.15 0.25
b 0.3 0.5
Detail A D 4.85 4.95
E 5.90 6.10
h 7~9 E1 3.85 3.95
45 e 1.27 Typ
Detail A h - 0.35
A2 A A3
L 0.62 0.82
b
0 8
e
All Dimensions in mm
D
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NEW PRODUCT
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