SPP17N80C3

SPA17N80C3

Cool MOS Power Transistor VDS 800 V

Feature RDS(on) 0.29
New revolutionary high voltage technology ID 17 A
Worldwide best RDS(on) in TO 220
Ultra low gate charge PG-TO220-3-31 PG-TO220

Periodic avalanche rated

Extreme dv/dt rated 1
2
3

Ultra low effective capacitances P-TO220-3-31

Improved transconductance
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code Marking

SPP17N80C3 PG-TO220 Q67040-S4353 17N80C3
SPA17N80C3 PG-TO220-3-31 SP000216353 17N80C3

Maximum Ratings
Parameter Symbol Value Unit
SPP SPA
Continuous drain current ID A
TC = 25 C 17 17 1)
TC = 100 C 11 11 1)
Pulsed drain current, tp limited by Tjmax ID puls 51 51 A
Avalanche energy, single pulse EAS 670 670 mJ
ID=3.4A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2) EAR 0.5 0.5

ID=17A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A

Gate source voltage VGS 20 20 V
Gate source voltage AC (f >1Hz) VGS 30 30
Power dissipation, TC = 25C Ptot 208 42 W
Operating and storage temperature Tj , Tstg -55...+150 C

Rev. 2.7 Page 1 2011-09-27

Final Data Sheet 1 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
VDS = 640 V, ID = 17 A, Tj = 125 C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.6 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 3) - 35 -
Soldering temperature, wavesoldering Tsold - - 260 C
1.6 mm (0.063 in.) from case for 10s 4)

Electrical Characteristics, at Tj=25C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=17A - 870 -
breakdown voltage
Gate threshold voltage VGS(th) ID=1000A, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS VDS=800V, V GS=0V, A
Tj=25C - 0.5 25
Tj=150C - - 250
Gate-source leakage current I GSS VGS=20V, V DS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=11A
Tj=25C - 0.25 0.29
Tj=150C - 0.78 -
Gate input resistance RG f=1MHz, open drain - 0.7 -

Rev. 2.7 Page 2 2011-09-27

Final Data Sheet 2 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS2*ID*R DS(on)max, - 15 - S
ID=11A

Input capacitance Ciss VGS=0V, VDS=25V, - 2320 - pF

Output capacitance Coss f=1MHz - 1250 -
Reverse transfer capacitance Crss - 60 -
Effective output capacitance,5) Co(er) VGS=0V, - 59 -
energy related VDS=0V to 480V

Effective output capacitance,6) Co(tr) - 124 -

time related
Turn-on delay time td(on) VDD=400V, VGS=0/10V, - 25 - ns
Rise time tr ID=17A, - 15 -
Turn-off delay time td(off) RG =4.7, Tj =125C - 72 82
Fall time tf - 6 9

Gate Charge Characteristics

Gate to source charge Qgs VDD=640V, ID=17A - 12 - nC
Gate to drain charge Qgd - 46 -
Gate charge total Qg VDD=640V, ID=17A, - 91 177
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=640V, ID=17A - 6 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AV AR
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
o(er)
6C is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
o(tr)

Rev. 2.7 Page 3 2011-09-27

Final Data Sheet 3 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25C - - 17 A
forward current
Inverse diode direct current, I SM - - 51
pulsed
Inverse diode forward voltage VSD VGS =0V, IF=IS - 1 1.2 V
Reverse recovery time t rr VR =400V, IF =IS , - 550 - ns
Reverse recovery charge Q rr diF/dt=100A/s - 15 - C
Peak reverse recovery current I rrm - 51 - A
Peak rate of fall of reverse dirr/dt Tj=25C - 1200 - A/s
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP SPA SPP SPA
Rth1 0.00812 0.00812 K/W Cth1 0.0003562 0.0003562 Ws/K
Rth2 0.016 0.016 Cth2 0.001337 0.001337
Rth3 0.031 0.031 Cth3 0.001831 0.001831
Rth4 0.114 0.16 Cth4 0.005033 0.005033
Rth5 0.135 0.324 Cth5 0.012 0.008657
Rth6 0.059 2.522 Cth6 0.092 0.412

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 2.7 Page 4 2011-09-27

Final Data Sheet 4 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP17N80C3
240 45
W
W

200
35
180

160 30

Ptot
Ptot

140
25
120
20
100

80 15

60
10
40
5
20

0 0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( VDS ) ID = f (VDS)
parameter : D = 0 , TC=25C parameter: D = 0, TC = 25C
2
10 10 2

A A

10 1 10 1
ID

ID

10 0 10 0
tp = 0.001 ms
tp = 0.01 ms tp = 0.001 ms
tp = 0.1 ms tp = 0.01 ms
tp = 1 ms tp = 0.1 ms
DC tp = 1 ms
10 -1 10 -1 tp = 10 ms
DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

Rev. 2.7 Page 5 2011-09-27

Final Data Sheet 5 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

5 Transient thermal impedance 6 Transient thermal impedance FullPAK

ZthJC = f (tp) ZthJC = f (tp)
parameter: D = tp/T parameter: D = tp/t
10 1 10 1
K/W K/W

10 0 10 0
ZthJC

ZthJC
10 -1 10 -1

D = 0.5
D = 0.5 D = 0.2
10 -2 10 -2 D = 0.1
D = 0.2
D = 0.1 D = 0.05
D = 0.05 D = 0.02
D = 0.02 D = 0.01
10 -3 D = 0.01 10 -3 single pulse
single pulse

10 -4 -7 -6 -5 -4 -3 -1
10 -4 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic

ID = f (VDS); Tj =25C ID = f (VDS); Tj =150C
parameter: tp = 10 s, VGS parameter: tp = 10 s, VGS
70 35
A 20V
20V 10V
A
60 10V 8V
7V
55

50 25 6.5V

45 6V
ID

ID

8V
40 20

35 7V
5.5V
30 15

25 6V
5V
20 10

15 4.5V
10 5V 5
4V
5

0 0
0 5 10 15 20 VDS 30 0 5 10 15 20 VDS 30
V V

Rev. 2.7 Page 6 2011-09-27

Final Data Sheet 6 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

9 Typ. drain-source on resistance 10 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150C, VGS parameter : ID = 11 A, VGS = 10 V
SPP17N80C3
1.5 1.6

1.3
1.2

RDS(on)
RDS(on)

1.2

1.1 4V 4.5V 5V 5.5V 6V 1

6.5V

1 0.8

0.9
0.6

0.8 7V
8V 0.4 98%
0.7 10V
20V typ
0.2
0.6

0.5 0
0 5 10 15 20 25 A 35 -60 -20 20 60 100 C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge

ID = f ( VGS ); VDS 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 s parameter: ID = 17 A pulsed
SPP17N80C3
65 16
A
V
25C
55

50
12
45 0,2 VDS max
VGS

0,8 VDS max

ID

40 10

35
150C
8
30

25 6
20
4
15

10
2
5

0 0
0 2 4 6 8 10 12 14 16 V 20 0 20 40 60 80 100 120 nC 160
VGS QGate

Rev. 2.7 Page 7 2011-09-27

Final Data Sheet 7 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

13 Forward characteristics of body diode 14 Avalanche SOA

IF = f (VSD) IAR = f (tAR)
parameter: Tj , tp = 10 s par.: Tj 150 C
10 2 SPP17N80C3
18

A
A

14

10 1 12

IAR
IF

10

10 0 6
Tj = 25 C typ T j(START)=25C

Tj = 150 C typ 4
Tj = 25 C (98%)
Tj = 150 C (98%) 2 T j(START)=125C

10 -1 0 -3 -2 -1 0 1 2 4
0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 10 10 10 10 10 s 10
VSD tAR

15 Avalanche energy 16 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = 3.4 A, VDD = 50 V
SPP17N80C3
700 980
mJ V

600 940
550
V(BR)DSS

920
500 900
E AS

450
880
400
860
350
840
300
820
250
800
200
780
150

100 760

50 740

0 720
25 50 75 100 C 150 -60 -20 20 60 100 C 180
Tj Tj

Rev. 2.7 Page 8 2011-09-27

Final Data Sheet 8 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

17 Avalanche power losses 18 Typ. capacitances

PAR = f (f ) C = f (VDS)
parameter: EAR =0.5mJ parameter: VGS =0V, f=1 MHz
500 10 5
pF
W

400 10 4
Ciss
350
PAR

10 3

C
300

250

200 10 2 Coss

150

10 1 Crss
100

50

0 4 5 6
10 0
10 10 Hz 10 0 100 200 300 400 500 600 V 800

f VDS

19 Typ. Coss stored energy

Eoss=f(VDS)

18

14
E oss

12

10

0
0 100 200 300 400 500 600 V 800
VDS

Rev. 2.7 Page 9 2011-09-27

Final Data Sheet 9 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

Definition of diodes switching characteristics

Rev. 2.7 Page 10 201109-27

Final Data Sheet 10 Rev. 2.8, 2017-07-25
 SPP17N80C3
SPA17N80C3

PG-TO220-3-1, PG-TO220-3-21

Rev. 2.7 Page 11 2011-09-27

Final Data Sheet 11 Rev. 2.8, 2017-07-25
 SPP17N80
0C3
SPA17N80
0C3

FinalDattaSheet 1 Rev.2.2
2,2016080
04

Final Data Sheet 12 Rev. 2.8, 2017-07-25

800VCoolMOSC3PowerTransistor
SPAl7N80C3

RevisionHistory
SPAl7N80C3

Revision:2017-07-27,Rev.2.8
Previous Revision
Revision Date Subjects (major changes since last revision)
2.8 2017-07-27 Revised package drawing on page 12

TrademarksofInfineonTechnologiesAG

AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DI-POL,DrBlade,
EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon,
ISOFACE,IsoPACK,i-Wafer,MIPAQ,ModSTACK,my-d,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE,
PRIMARION,PrimePACK,PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS,
SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com

Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
2017InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(Beschaffenheitsgarantie).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe
productofInfineonTechnologiesincustomersapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomers
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

13 Rev.2.8,2017-07-27