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 2SJ548
Silicon P Channel MOS FET
High Speed Power Switching

ADE-208-639A (Z)
2nd. Edition
Jul. 1998

Features

Low on-resistance
R DS(on) = 0.075 typ.
Low drive current.
4V gate drive devices.
High speed switching.

Outline

TO220FM

G
1. Gate
2. Drain
1 2 3. Source
3
S
2SJ548

Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS 20 V
Drain current ID 15 A
Note1
Drain peak current I D(pulse) 60 A
Body-drain diode reverse drain current I DR 15 A
Note3
Avalanche current I AP 15 A
Note3
Avalanche energy EAR 19 mJ
Note2
Channel dissipation Pch 30 W
Channel temperature Tch 150 C
Storage temperature Tstg 55 to +150 C
Note: 1. PW 10s, duty cycle 1 %
2. Value at Tc = 25C
3. Value at Tch = 25C, Rg 50

2
 2SJ548
Electrical Characteristics (Ta = 25C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 V I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS 20 V I G = 100A, VDS = 0
Zero gate voltege drain current I DSS 10 A VDS = 60 V, VGS = 0
Gate to source leak current I GSS 10 A VGS = 16V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.0 2.0 V I D = 1mA, VDS = 10V
Static drain to source on state RDS(on) 0.075 0.095 I D = 8A, VGS = 10V Note4
resistance RDS(on) 0.105 0.155 I D = 8A, VGS = 4V Note4
Forward transfer admittance |yfs| 6.5 11 S I D = -8A, VDS = -10V Note4
Input capacitance Ciss 850 pF VDS = 10V
Output capacitance Coss 420 pF VGS = 0
Reverse transfer capacitance Crss 110 pF f = 1MHz
Turn-on delay time t d(on) 12 ns VGS = 10V, ID = 8A
Rise time tr 75 ns RL =3.75
Turn-off delay time t d(off) 125 ns
Fall time tf 75 ns
Bodydrain diode forward voltage VDF 1.1 V I F = 15A, VGS = 0
Bodydrain diode reverse t rr 70 ns I F = 15A, VGS = 0
recovery time diF/ dt =50A/s
Note: 4. Pulse test

3
2SJ548

Main Characteristics

Power vs. Temperature Derating Maximum Safe Operation Area

80 1000

300
Pch (W)

I D (A)
60 100 10 s
30 10
PW 0
Channel Dissipation

Drain Current
1 s
10 DC = m
40 10 s
Op m
er s(
3 at
ion
1s
ho
Operation in (T t)
c=
20 1 this area is 25
C
limited by R DS(on) )
0.3
Ta = 25 C
0.1
0 50 100 150 200 0.1 0.3 1 3 10 30 100
Case Temperature Tc (C) Drain to Source Voltage V DS (V)

Typical Output Characteristics

10 V 6 V Typical Transfer Characteristics
20 20
4 V V DS = 10 V
Pulse Test
16 Pulse Test 16
(A)
I D (A)

ID

12 3.5 V
12
Drain Current

Drain Current

8 8
3 V
25C
Tc = 75C
4 4
VGS = 2.5 V 25C

0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V)

4
 2SJ548

Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
4.0 10

Drain to Source On State Resistance

R DS(on) ( )
Pulse Test Pulse Test
Drain to Source Saturation Voltage
V DS(on) (V)

3
3.2

1
2.4
0.3
1.6 VGS = 4 V
0.1
I D = 15 A
10 V
0.8 10 A
0.03
5 A
0.01
0 4 8 12 16 20 0.1 0.3 1 3 10 30 100
Gate to Source Voltage V GS (V) Drain Current I D (A)

Static Drain to Source on State Resistance Forward Transfer Admittance vs.

vs. Temperature Drain Current
Static Drain to Source on State Resistance

0.40 100
Forward Transfer Admittance |y fs | (S)
R DS(on) ( )

Pulse Test
30
0.32
Tc = 25 C
10
0.24 I D = 15 A 10 A 5 A
25 C
3
0.16 VGS = 4 V
1 75 C

0.08 5, 10, 15 A 0.3

10 V V DS = 10 V
Pulse Test
0 0.1
40 0 40 80 120 160 0.1 0.3 1 3 10 30 100
Case Temperature Tc (C) Drain Current I D (A)

5
2SJ548

BodyDrain Diode Reverse Typical Capacitance vs.

Recovery Time Drain to Source Voltage
500 10000
VGS = 0
f = 1 MHz
Reverse Recovery Time trr (ns)

3000

Capacitance C (pF)
200

100 1000 Ciss

50 300 Coss

100
20
Crss
10 30
di / dt = 50 A / s
VGS = 0, Ta = 25 C 10
5
0.1 0.3 1 3 10 20 0 10 20 30 40 50
Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V)

Dynamic Input Characteristics Switching Characteristics

0 0 1000
V DS (V)

V GS (V)

V DD = 10 V V GS = 10 V, V DD = 30 V
25 V 500 PW = 5 s, duty < 1 %
20 50 V 4
Switching Time t (ns)

200
Drain to Source Voltage

Gate to Source Voltage

t d(off)
40 V GS 8
100 tf
V DS
60 V DD = 50 V 12
50
25 V
10 V tr
80 16
20
t d(on)
I = 15 A
100 D 20 10
0 8 16 24 32 40 0.1 0.2 0.5 1 2 5 10 20
Gate Charge Qg (nc) Drain Current I D (A)

6
 2SJ548

Reverse Drain Current vs. Maximum Avalanche Energy vs.

Source to Drain Voltage Channel Temperature Derating
20 20

Repetitive Avalanche Energy EAR (mJ)

I AP = 15 A
Reverse Drain Current I DR (A)

V DD = 25 V
16 16
duty < 0.1 %
10 V Rg > 50
5 V
12 12

V GS = 0, 5 V
8 8

4 4

Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
Source to Drain Voltage V SD (V) Channel Temperature Tch (C)

Avalanche Test Circuit Avalanche Waveform

VDSS
1 2
EAR = L I AP
L 2 VDSS V DD
V DS
Monitor
I AP V (BR)DSS
Monitor
I AP
Rg D. U. T VDD V DS
ID
Vin 50
15 V
VDD
0

7
2SJ548

Normalized Transient Thermal Impedance vs. Pulse Width

3
Normalized Transient Thermal Impedance
s (t)

Tc = 25C
1
D=1

0.5
0.3

0.2
ch c(t) = s (t) ch c
0.1 0.1 ch c = 4.17C/W, Tc = 25C

0.05 PW
PDM D=
T
0.03 0.02
e PW
0.0
1
p uls
hot T
1s
0.01
10 100 1m 10 m 100 m 1 10
Pulse Width PW (S)

Switching Time Test Circuit Waveform

Vin Monitor Vout Vin

Monitor
D.U.T. 10%
RL
90%

Vin V DD 90%
90%
10 V 50 = 30 V

Vout 10% 10%

td(on) tr td(off) tf

8
 2SJ548

Package Dimensions

10.0 0.3 2.8 0.2 As of January, 2001

7.0 0.3 3.2 0.2 2.5 0.2 Unit: mm

0.6

17.0 0.3
12.0 0.3
1.2 0.2
5.0 0.3

1.4 0.2 4.45 0.3

2.0 0.3

14.0 1.0
2.5

0.7 0.1

2.54 0.5 2.54 0.5 0.5 0.1

Hitachi Code TO-220FM

JEDEC
EIAJ Conforms
Mass (reference value) 1.8 g

9
2SJ548

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.

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Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

10
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