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- VDD provides a drain-to-source voltage and supplies current from drain to source. VGG
sets the reverse-bias voltage between the gate and the source.
- The JFET is always operated with the gate-source pn junction reverse-biased.
- Reverse biasing of the gate-source pn junction produces a depletion region which
extends into the n-channel, thus increasing its resistance.
- Therefore, the channel width and resistance (indirectly ID) can be controlled using
gate-source reverse bias voltage.
→ Schematic Symbols:
→ JFET Characteristics:
- Drain Characteristics:
● Consider the case where VGS = 0, and VDD is increased from 0 to a positive value.
● Ohmic region: As VDD increases, ID increases proportionally until VDD = VP (pinch off
vtg.).
● Active region: As VDD equals pinch off voltage, the reverse bias creates enough depletion
region to prevent ID from increasing and thus keeping it constant.
● Breakdown: Breakdown occurs when ID increases very rapidly compared to VDS. It can
cause irreversible damage to the device and hence JFET is operated below breakdown.
- Pinch-off Voltage:
● For VGS = 0, the value of VDS at which ID becomes constant ⇒ pinch-off voltage.
● For a particular JFET, VP has a fixed value.
● This value is always specified for VGS = 0 and is found on the datasheet for the JFET.
● The transfer curve can also be developed from the relation between ID and VGS.
0
● The input capacitance, CISS, is a result of the JFET operating with a reverse-biased pn
junction.
→ JFET Biasing:
- Self Bias:
● Most common type of JFET biasing.
● For a JFET, gate-source junction should always be reverse biased. This can be achieved
by a negative VGS for an n-channel JFET and positive VGS for p-channel.
● Gate resistor RG does not affect bias because it has essentially no voltage drop across it;
and therefore the gate remains at 0 V.
● RG is only necessary to force the gate to be at 0V and to isolate an ac signal from ground
in amplifier applications.
● For n-channel JFET in above figure, IS produces a voltage drop across RS and makes
the source positive w.r.t. ground.
● IS = ID and VG = 0 ⇒ VS = IDRS
● Therefore, gate to source voltage is:
VGS = VG - VS = 0 - IDRS = -IDRS
⇒ VGS = -IDRS