Hamideh’s notes on:

 (may be incomplete) Give the C-V and G-V measurement results as a function of 4 frequencies : 1
MHz, 100 kHz, 10kHz, 1kHz
 Repeat the same experiment with light illumination, explain what you have observed.

! (check ending calculation plz) Try to understand if there exists any mobile and fixed oxide charges.
If any, give an estimation of their amount.

As basis for derivation of the MOSFET models it is assumed that inversion layer charge is proportional to
the applied voltage, that is:
𝑄𝑖𝑛𝑣 = 𝐶𝑜𝑥 (𝑉𝐺𝑎𝑡𝑒 − 𝑉𝑇ℎ𝑟𝑒𝑠ℎ𝑜𝑙𝑑 )
Below threshold voltage 𝑄𝑖𝑛𝑣 = 0
To understand our measurements first we note that the dependence on frequency is prominent in
inversion since a certain reaction time is required to generate the minority carrier charges in the
inversion layer and thermal equilibrium is not obtained immediately.
For lower frequency or quasi-static measurement, we observe that the thermal equilibrium is achieved
rather quickly and after depletion the capacitance and conductance values return to their previous
magnitudes. Whereas in higher frequency measurements, we can conclude that the charge in the
inversion layer is not changing as much from equilibrium value when the applied DC voltage is changed.
Therefore, high frequency measurements reflect the charge variation in the depletion layer rather than
movements of inversion layer charges. Since the deep depletion effects are less prominent in lower
frequencies, such frequencies seem to be a better option for studying MOS capacitors. While if we are
doing the measurements in high f, the applied voltage should change slowly as compared to carriers’
half-lives.
We also did not do a measurement for frequencies lower than this because the noise our setup was
producing was too much in low frequencies.
Repeating the measurement in presence of light as opposed to dark setup gave us different results
because light will cause a carrier generation in MOS which in turn will increase the generation rate
beyond the thermal equilibrium value we assumed above and therefore reduce the time needed to
reach equilibrium. Therefore, the measurements and studies on a MOS capacitance should be done in
the dark.
To estimate the amount of mobile/fixed oxide charges we refer to the basis assumption we made, that
is
𝑄𝑖𝑛𝑣 = 𝐶𝑜𝑥 (𝑉𝐺𝑎𝑡𝑒 − 𝑉𝑇ℎ𝑟𝑒𝑠ℎ𝑜𝑙𝑑 )
−11
For 100 𝑘𝐻𝑧, 𝐶𝑜𝑥 = 9 × 10 𝐹 , 𝑉𝑇ℎ ~ − 8 𝑉
𝑄𝑖𝑛𝑣 ≅ 9 × 10−11 𝐹 × 20 𝑉 ≅ 10−9 𝐶
𝑁𝑐ℎ𝑎𝑟𝑔𝑒𝑠 ≅ 1010 𝑒