Preliminary Technical Information

TrenchT2TM IXTA110N055T2 VDSS = 55V

Power MOSFET IXTP110N055T2 ID25 = 110A
RDS(on) Ω
≤ 6.6mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)

G
Symbol Test Conditions Maximum Ratings S
VDSS TJ = 25°C to 175°C 55 V (TAB)
VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V
TO-220 (IXTP)
VGSM Transient ± 20 V
ID25 TC = 25°C 110 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC = 25°C, pulse width limited by TJM 300 A
G
D
IAR TC = 25°C 50 A S (TAB)

EAS TC = 25°C 400 mJ

G = Gate D = Drain
PD TC = 25°C 180 W S = Source TAB = Drain
TJ -55 ... +175 °C
Features
TJM 175 °C
Tstg -55 ... +175 °C International standard packages
TL 1.6mm (0.062in.) from case for 10s 300 °C Unclamped Inductive Switching (UIS)
Plastic body for 10 seconds 260 °C rated
Low package inductance
Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. 175°C Operating Temperature
Weight TO-263 2.5 g High current handling capability
TO-220 3.0 g ROHS Compliant
High performance Trench
Technology for extremely low RDS(on)

Advantages

Symbol Test Conditions Characteristic Values Easy to mount

(TJ = 25°C unless otherwise specified) Min. Typ. Max. Space savings
High power density
BVDSS VGS = 0V, ID = 250μA 55 V
Synchronous
VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V
Applications
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 2 μA Automotive Engine Control
Synchronous Buck Converter
VGS = 0V TJ = 150°C 200 μA
(for notebook systempower & General
RDS(on) VGS = 10V, ID = 25A, Notes 1, 2 5.5 6.6 mΩ purpose point & load.)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture

© 2008 IXYS CORPORATION, All rights reserved DS99955(02/08)

 IXTA110N055T2
IXTP110N055T2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. TO-263 (IXTA) Outline

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 49 S

Ciss 3060 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 497 pF
Crss 105 pF
td(on) 18 ns
Resistive Switching Times
tr 25 ns
VGS = 10V, VDS = 30V, ID = 25A
td(off) RG = 5Ω (External) 40 ns
tf 23 ns
Qg(on) 57 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A 16 nC
Qgd 11 nC
RthJC 0.82 °C/W
RthCH TO-220 0.50 °C/W

Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 110 A
ISM Repetitive, Pulse width limited by TJM 300 A
TO-220 (IXTP) Outline
VSD IF = 25A, VGS = 0V, Note 1 0.84 1.0 V
trr IF = 50A, VGS = 0V 38 ns
IRM -di/dt = 100A/μs 2.4 A
VR = 27V
QRM 46 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXTA110N055T2
IXTP110N055T2
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
110 350
VGS = 15V VGS = 15V
100 10V 10V
9V 300
90
8V
80 9V
250
70
ID - Amperes

ID - Amperes
7V 200
60 8V

50 7V
150
40 6V

30 100
6V
20
50
5V 5V
10

0 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8

VDS - Volts VDS - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 55A Value

@ 150ºC vs. Junction Temperature
110 2.2
VGS = 15V
100 VGS = 10V
10V 2.0
90 9V
8V
80 1.8 I D = 110A
RDS(on) - Normalized

70 7V
ID - Amperes

1.6 I D = 55A
60
1.4
50 6V
40 1.2

30
1.0
20 5V
0.8
10

0 0.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175
VDS - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Normalized to ID = 55A Value

vs. Drain Current Fig. 6. Drain Current vs. Case Temperature
3.0 90

2.8 VGS = 10V External Lead Current Limit

80
15V - - -
2.6 TJ = 175ºC
70
2.4
RDS(on) - Normalized

2.2 60
ID - Amperes

2.0 50
1.8
40
1.6
1.4 30

1.2
20
1.0
TJ = 25ºC 10
0.8
0.6 0
0 50 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 175
ID - Amperes TC - Degrees Centigrade

© 2008 IXYS CORPORATION, All rights reserved

 IXTA110N055T2
IXTP110N055T2

Fig. 7. Input Admittance Fig. 8. Transconductance

100 70
TJ = - 40ºC
90
60
80

70 50 25ºC

g f s - Siemens
ID - Amperes

60
40 150ºC
50
30
40
TJ = 150ºC
30 25ºC 20
- 40ºC
20
10
10

0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 10 20 30 40 50 60 70 80 90 100
VGS - Volts ID - Amperes

Fig. 9. Forward Voltage Drop of

Intrinsic Diode Fig. 10. Gate Charge
300 10

9 VDS = 28V
270
I D = 55A
240 8 I = 10mA
G

210 7
IS - Amperes

VGS - Volts

180 6

150 5

120 4

90 3
TJ = 150ºC
60 2
TJ = 25ºC
30 1

0 0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 5 10 15 20 25 30 35 40 45 50 55 60
VSD - Volts QG - NanoCoulombs

Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area

10,000 1,000
f = 1 MHz
Ciss RDS(on) Limit
Capacitance - PicoFarads

100
I D - Amperes

1,000 25µs

100µs
Coss

100 10 1ms
Crss
TJ = 175ºC
TJ = 25ºC
10ms
Single Pulse
100ms
10 1
0 5 10 15 20 25 30 35 40 1 10 100
VDS - Volts VDS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.
 IXTA110N055T2
IXTP110N055T2
Fig. 13. Resistive Turn-on Fig. 14. Resistive Turn-on
Rise Time vs. Junction Temperature Rise Time vs. Drain Current
27 26

RG = 5Ω
26 VGS = 10V TJ = 25ºC
25
VDS = 30V
25
t r - Nanoseconds

t r - Nanoseconds
RG = 5Ω
24
24 VGS = 10V
VDS = 30V
I D = 50A
23
23

22 I = 25A
D
22 TJ = 125ºC
21

20 21
25 35 45 55 65 75 85 95 105 115 125 25 30 35 40 45 50
TJ - Degrees Centigrade ID - Amperes

Fig. 15. Resistive Turn-on Fig. 16. Resistive Turn-off

Switching Times vs. Gate Resistance Switching Times vs. Junction Temperature
29 27 27 65

28 tr td(on) - - - - 26 tf td(off) - - -
TJ = 125ºC, VGS = 10V -
27 25 26 55
VDS = 30V RG = 5Ω, VGS = 10V
t d(on) - Nanoseconds

t d(off) - Nanoseconds
t r - Nanoseconds

t f - Nanoseconds

26 24
25 45
25 23
I D = 50A, 25A
24 22 I D = 25A, 50A
24 35
23 21

22 20 23 25

21 19

20 18 22 15
5 6 7 8 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Fig. 18. Resistive Turn-off

Switching Times vs. Drain Current Switching Times vs. Gate Resistance
26.0 58 70 80

tf td(off) - - - - 65 tf td(off) - - - - 75
25.5 54
RG = 5Ω, VGS = 10V 60 TJ = 125ºC, VGS = 10V 70
25.0 VDS = 30V 50 VDS = 30V
55 65
t d(off) - Nanoseconds
t d(off) - Nanoseconds

t f - Nanoseconds
t f - Nanoseconds

24.5 46 50 60

45 55
24.0 42 I D = 25A
40 50
TJ = 125ºC I = 50A
D
23.5 38 35 45

30 40
23.0 TJ = 25ºC 34
25 35
22.5 30
20 30

22.0 26 15 25
25 30 35 40 45 50 5 6 7 8 9 10 11 12 13 14 15
ID - Amperes RG - Ohms

© 2008 IXYS CORPORATION, All rights reserved

 IXTA110N055T2
IXTP110N055T2

Fig. 19. Maximum Transient Thermal Impedance

1.00
Z (th)JC - ºC / W

0.10

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_110N055T2(V3)2-15-08