Pollachi Institute of Engineering and Technology

Academic Year 2016-17 (EVEN Semester)

Department of Electronics and Communication Engineering

Name of the Faculty member : SARAVANAKUMAR.T

Subject Code /Title : EC6201 / Electronic Devices
Name of the Course : Electronics and Communication Engineering
Semester / Branch : I / ECE

Course Plan
1. Pre- requisite:
 Basic knowledge on Physics.
 Introduction to Diodes.
 Introduction to Devices

2. Objectives:
 Be exposed to basic electronic devices.
 Be familiar with the theory, construction, and operation of Basic electronic devices.

3. Curriculum Gaps:
 Physics.
 Material science.

4. List of Text / Reference Books prescribed by University:

T1: Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc
GrawHill Inc. 007.

R1: Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978

R2: Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson
Prentice Hall, 10th edition,July 2008.

5. Other Related Books Available in Library:

1. M.K.Ramachandran, “Electronic Devices”, VRB Publication, 2016.

2. U.A.Bakshi “Electronic Devices”, Technical Publication, Third Edition 2015.

6. Lesson Plan

No of Cumulative
Text / Ref Teaching
Sl. No Topics to be covered Periods Number of
Page No aids
Planned period(s)

UNIT – I SEMICONDUCTOR DIODE

1 Semiconductor R2:001-002 1
2 Intrinsic Semiconductor R2:002-007 1
3 Extrinsic Semiconductor R2:007-010 1
4 PN junction diode R2:010-015 1
5 Current equations R2:015-017 1
6 Diffusion and drift current densities R2:017-022 2
7 Switching Characteristics R2:026-032 1
8 Review I 1
UNIT- II BIPOLAR JUNCTION
9 NPN Transistor R2:131-132 1
10 PNP Transistor R2:132-134 1
11 Early effect & Current equations R2:134-137 1
12 CE configuration R2:260-266 1
13 CC configuration & CB configuration R2:267-271 2
14 Hybrid -π model & h-parameter model R2:329-330 1
15 Ebers Moll Model R2:331-338 1
16 Gummel Poon-model & Multi Emitter R2:338-341 1
17 Review II 1
UNIT – III FIELD EFFECT TRANSISTORS
18 JFETs R2:368-370 1
19 Drain and Transfer characteristics R2:370-372 1
20 Pinch off voltage and its significance R2:373-378 1
21 MOSFET- Characteristics R2:385-387 1
22 D-MOSFET, E-MOSFET R2:387-390 2
23 Channel length modulation R2:39-392 1
24 FINFET,DUAL GATE MOSFET R2:392-398 2
25 Review III 1
 UNIT – IV SPECIAL SEMICONDUCTOR DEVICES
26 Metal-Semiconductor Junction R2:401-402 1
27 MESFET R2:402-405 1
28 Schottky barrier diode R2:801-805 1
29 Zener diode R2:038-040 1
30 Varactor diode R2:806-809 1
31 Tunnel diode R2:809-8012 1
32 Gallium Arsenide device R2:812-813 1
33 LASER diode R2:813-815 1
34 LDR R2:815-817 1
35 Review IV 1
UNIT – V POWER DEVICES AND DISPLAY DEVICES
36 UJT R2:848-857 1
37 SCR R2:832-835 1
38 Diac & Triac R2:845-848 1
39 Power BJT & Power MOSFET R2:439-450 2
40 DMOS-VMOS R2:400-405 1
41 LED & LCD R2:814-817 2
42 Photo transistor & Opto Coupler R2:817-820 2
43 Solar cell & CCD. R2:822-825 1
44 Review V 1

Total No of Periods = 51 (45 Hours)

7. Web Resources

Sl. Unit
Topic Web Link
No. No.
1 1 Semiconductor https://www.youtube.com/watch?v=aOKc5_s_8LM
2 2 Bipolar Junction https://www.youtube.com/watch?v=xSh9PZZPpOc
3 3 FET https://www.youtube.com/watch?v=SjeK1nkiFvI
4 4 Special Diodes https://www.youtube.com/watch?v=3zVTwiwLtW4

8. Additional topics beyond the Syllabus

1. Introduction to Basic Electronics.
 2. Amplifiers.

9. Other Related Activities:

Sl. No. Name of the Activity No of activity Planned Details

1.PN Diode
1. Assignment 3 2.FET
3. LED
2. Guest Lectures - -
3. Industrial Visit - -

10. Internal Test Portions:

Test No. Portion for Test No. of Units

Internal Test - I UNIT 1,2 2
Internal Test - II UNIT 3, 4 (Till topic) 1 1/2
Internal Test - III UNIT 4 (From Topic), UNIT 5 1 1/2

Faculty in Charge HOD/ ECE Principal

(T.Saravanakumar) (Dr.N.Rajeshkumar) (Dr.K.P.Dhanabalakrishnan)