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ANALOG ELECTRONICS I
(120 H)
:Objectives -1
2- Teaching method:
3- Teaching aids
Overhead projector or power point on white board or active board with
accessories.
A notebook.
A technical manual.
A multi-media computer (if possible).
Technical information documentaries (movies).
Library access (guided if possible).
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BT1 – Electronics Subject: Analog Electronics I
4- Contents
Hours
1. Generalities 8
2. Semiconductors 10
3. The junction diode 16
4. Diode circuits 24
5. The junction transistor (bipolar transistor) 14
6. Small signal bipolar transistor amplifiers 24
7. Field effect transistor (FET) 18
8. MOSFET 6
T OTAL 120
Skills:
At the end of this section, the student will be able to:
1-Define basic electrical laws.
2-Analyse electric circuits by using some methods to find the current and the
voltage.
3-Identify the characteristics of semiconductor materials.
4-Explain the conduction phenomenon in semiconductor materials.
5-Identify the properties of the P-N junction.
6-Determine the current-voltage characteristics of the PN junction.
Evaluation
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BT1 – Electronics Subject: Analog Electronics I
Skills:
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BT1 – Electronics Subject: Analog Electronics I
Evaluation
1. Plot the characteristic curve voltage/current of a junction diode and study the
different characteristics (forward polarization, reversed polarization, forward
current, saturation current and load line).
2. Explain the principle of a diode rectifier (half wave rectifier, full wave
rectifier with two diodes, bridge rectifier, clipping half-wave rectification
circuits, positive and negative clipping, amplitude detection, positive and
negative clamping). Draw the signal forms for each circuit, and give its
applications.
3. Differentiate many types of diodes especially in the applications.
4. Define the Zener diode properties and explain the operation of voltage
regulator and the clipping circuit using a Zener diode.
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BT1 – Electronics Subject: Analog Electronics I
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BT1 – Electronics Subject: Analog Electronics I
Skills:
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BT1 – Electronics Subject: Analog Electronics I
Evaluation
1. Study the internal structure of a BJT and explain the charge distribution
phenomena. Identify its terminals.
2. Study the various operating modes and biasing of the BJT. Deduce the
definition of the following parameters: , , IC, IE and IB.
3. Draw the characteristic curves and the load line of the BJT. Deduce the
operating point.
4. Explain in details the principles of the BJT common base, common emitter
and common collector circuits.
5. Study the coupling between the stages of amplifiers.
6. Study the internal structure of a field effect transistor (FET and MOSFET)
and identify the various types, its terminals and symbols.
7. Define the following terms: a-Operating mode, b-Static characteristics, c-
Pinch off voltage.
8. Determine the various polarization circuits of FET and MOSFET.
9. Explain briefly the principle of the FET and MOSFET common gate,
common source and common drain circuits.
10. Compare the properties and the applications between BJT and FET
transistors.
11. Compare the properties and the applications between FET and MOSFET
transistors.
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BT1 – Electronics Subject: Analog Electronics I
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BT1 – Electronics Subject: Analog Electronics I
- Current gain.
- Power gain.
- Utilization.
4. Common collector amplifier:
- Circuit.
- AC equivalent circuit.
- Voltage gain.
- Input impedance.
- Output impedance.
- Current gain.
- Power gain.
- Utilization.
5. Darlington.
6. Common base amplifier:
- Circuit, principle of operation.
- AC equivalent circuit.
- DC and AC load line.
- Input impedance.
- Output impedance
- Phase between input and output.
- Current gain.
- Voltage gain.
- Power gain.
- Utilization.
7. Types of coupling:
- RC coupling.
- LC coupling.
- Transformer coupling.
- Difference between RC, LC and transformer coupling.
- Utilization.
8. Multistage amplifier:
- General circuit.
- Circuit analysis in DC and AC.
- Global voltage gain Av.
9. Exercises.
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BT1 – Electronics Subject: Analog Electronics I
- Ohmic region.
- Saturation region, cutoff.
- Avalanche.
- Mutual characteristics: ID = f(VGS) ; VDS = ct
- FET parameters:
- Mutual conductance.
- Dynamic resistance.
4. FET as an amplifier:
- Common-source FET amplifier:
- DC analysis.
- AC analysis.
- Voltage gain.
- Input impedance.
- Output impedance.
- Phase inversion between input and output.
- Common-drain FET amplifier:
- DC analysis.
- AC analysis.
- Voltage gain.
- Input impedance.
- Output impedance.
- Phase inversion between input and output.
- Common-gate FET amplifier:
- DC analysis.
- AC analysis.
- Voltage gain.
- Input impedance.
- Output impedance.
- Phase inversion between input and output.
5. Comparison between FET and BJT
6. Exercises.
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