VDD VDD

IDS 10kW IDS

VT=2V
VT=2V 10kW

Figure 1: Figure 2:

2VDD
VDD
VDD
IDS
IDS
VT=0V
VT=-2V

Figure 3: Figure 4:

1. Given are the nMOSFET’s in the figures 1,2, 3 and 4. Draw the current
2
ID as a function of VDD for every case. Use the following data: µn = 2000 cm
Vs
,
F F
εox = εr ε0 = 3.5 10−13 cm ,εSi = 10−12 cm , tox = 35nm, W = 10µm, and
L = 1µm. Use the simplified current equations.

2. An n MOS transistor has the following properties: VF B = −0.5V , tox =

2
30nm, W = 5µm, L = 0.5µm, µ = 1000 cm Vs
, ND = 1016 cm−3

(a) Calculate the free-electron density in the channel that is required

for the MOSFET to present a resistance of 2kOhm between source and drain
at low value of VDS and for 0V substrate bias.

(b) Calculate the gate voltage in excess of the threshold voltage needed
to produce the desired resistance under the same conditions. At which ab-
solute value of gate voltage do we obtain this resistance?

1
 Figure 5:

(c) Sketch the band diagram of the MOSFET for this condition.

(d) The transistor is loaded by a resistor RL , as shown on figure 5.

Calculate the transconductance of the transistor for RL = 0 Ohm, RL =
500 Ohm, RL = 5 kOhm.

3. Given the circuit in figure 6 with RL = 10kΩ . Datas are VT = 1V ,

F 2
tox = 30nm,εox = 3.0 10−13 cm , W = 5µm, L = 0.5µm, µ = 1000 cmVs
,
VGS = 1.5V ,vin = 10−3 sin(2π 108 t) V . t is the time in s.

Figure 6:

All the capacitors are zero except the oxide capacity (and η = 1).
We ask the amplitude for the small signal voltage at the drain and the
amplitude of the small signal current at the gate.

4. A linear device geometry and a rectangular gate of length L by width

W were explicitly assumed in the text derivation of ID -VD relationships.
However, MOSFETs have been built with circular geometry, as pictured
(top view) in figure 7. If r1 and r2 are the inside and outside diameters of

2
 S G D r1
r2

Figure 7: MOSFET with a circular geometry

the gated area, show that in the square-law formulation one obtains:
" #
2
2π VDS
ID = µ n Cox (V GS − VT )VDS − (1)
ln( rr21 ) 2

for below pinch-off operation of a MOSFET with circular geometry. To

derive the above result, use cilindrical coordinates (r, θ, z). Tip: the gradient
operator in cilindrical coordinates is given by:

~ = ∂Ψ ~ur + 1 ∂Ψ ~uθ + ∂Ψ ~uz

∇Ψ (2)
∂r r ∂θ ∂z

3
5. Calculate and draw the charge distribution, the electrical field and the
band bending of the nMOSFET in figure 8 at the indicated area in the
channel. Use the following data: VGS = 5V , VD = VS = 0V , VB = −5V ,
F F
εox = εr ε0 = 3.5 10−13 cm , εSi = εrSi ε0 = 10−12 cm , tox = 35nm, NA =
C C
1016 cm−3 , Qox = 1.6 10−8 cm 2 , Q ss = 0 cm2
, n i = 10 10
cm −3
, φms = −0.345V ,
and Eg = 1.10eV .

VG

VS VD
n+
n+ n+

VB

Figure 8: