Code No.

: 16MT12301 SET - 1
SREE VIDYANIKETHAN ENGINEERING COLLEGE
(An Autonomous Institution, Affiliated to JNTUA, Anantapur)
I M.Tech. I Semester (SVEC 16)Regular / Supplementary Examinations
ADVANCED POWER SEMICONDUCTOR DEVICES
(Power Electronics and Drives)
Time: 3 Hours Max. Marks: 70
Answer ONE question from each unit
All questions carry equal marks

UNIT – I
1. a) Give a detail about general purpose diodes, fast recovery diodes and schottkey 7M CO1
diodes.
b) Discuss in detail about switching characteristics of power diode with neat sketch. 7M CO1

OR
2. a) Two diodes are connected in series shown in fig to share a total DC reverse 7M CO3
voltage of VD=5 kV. The reverse leakage currents of the two diodes are Is1 = 30
mA and Is2 = 35 mA.
Evaluate the diode voltages, if the voltage sharing resistances are R1 = R2 = 100
kΩ.

b) Evaluate the voltage sharing resistances R1& R2, if the diode voltages are equal 7M CO3
where VD1 = VD2 = VD/2.
UNIT – II
3. a) Explain in detail about operation, static and switching characteristics of thyristor 14M CO1
with neat sketch.
OR
4. a) For a thyristor, maximum junction temperature is 125°C. The thermal resistance 4M CO3
for the thyristor-sink combination are θjc = 0.16 and θjc = 0.08°C/W. For a heat
sink temperature of 70°C, compute the total power loss in the thyristor-sink
combination. In case the heat sink temperature is brought down to 60°C by forced
cooling, find the percentage increase in the device rating.
b) Describe the analogy between electrical and thermal quantities of thyristor. 10M CO2

UNIT – III
5. a) Explain switching characteristics of power BJT with neat sketch and give the 8M CO2
reason for storage time in power transistors. CO4

b) Explain the safe operating area of power transistor with neat sketch. 6M CO2

OR
6. a) Compare various operating characteristics between IGBT and MOSFET. 6M CO2

b) What are the factors to be considered while operating IGBTs are parallel? 8M CO4

UNIT – IV
7. a) Discuss the construction and working of GTO with a neat sketch. 7M CO1

b) Explain the construction and operational details of TRIAC with neat sketch. 7M CO1

OR
8. a) Compare various characterises between power switching devices ETOs, IGCTs, 8M CO2
MCTs and SITHs.
b) Explain the construction and operational details of SCS with a neat sketch. 6M CO1
UNIT – V
9. a) Explain R triggering circuit for thyristor with a suitable circuit diagram. 14M CO5

OR
10. a) Design the triggering circuit of figure. The parameters of the UJT are Vs = 30 V, 7M CO3
η = 0.51, Ip = 10 µA, Vv = 3.5 V, and Iv = 10 mA. The frequency of oscillation is
f= 60 Hz, and the width of the triggering pulse is tg= 40 µs. Assume VD = 0.5.

b) Explain in detail about IGBT drive ICs using charge pump, bootstrap and carrier 7M CO5
drive methods.
 Code No.: 16MT12301 SET - 2
SREE VIDYANIKETHAN ENGINEERING COLLEGE
(An Autonomous Institution, Affiliated to JNTUA, Anantapur)
I M.Tech. I Semester (SVEC 16)Regular / Supplementary Examinations
ADVANCED POWER SEMICONDUCTOR DEVICES
(Power Electronics and Drives)
Time: 3 Hours Max. Marks: 70
Answer ONE question from each unit
All questions carry equal marks

UNIT – I
1. Explain in detail about operation, applications, steady state and dynamic 14M CO1
characteristics of power diode with neat sketch
OR
2. a) Illustrate the device selection strategies of power semiconductor devices in detail 8M CO2

b) The measured values of a diode at a temperature of 25°C are 6M CO3

VD = 1.0 V at ID = 50 mA
VD = 1.5 V at ID = 600 mA

Determine (i) the emission co – efficient (ii) the leakage current

UNIT – II
3. a) Explain the construction and working of thyristor with a neat sketch. 7M CO1

b) For a thyristor, maximum junction temperature is 135°C. The thermal resistance 7M CO3
for the thyristor-sink combination are θjc = 0.26 and θjc = 0.09°C/W. For a heat CO4
sink temperature of 80°C, compute the total power loss in the thyristor-sink
combination. In case the heat sink temperature is brought down to 60°C by forced
cooling; Evaluate the percentage increase in the device rating.
OR
4. a) Compare various operating characteristics between GTO and Thyristor. 6M CO2

b) Explain in detail about over voltage protection of thyristor with suitable circuit 8M CO2
diagram.
UNIT – III
5. a) Discuss in detail about construction and working of n - channel MOSFET with a 6M CO1
neat sketch.
b) Discuss in detail about switching characteristics MOSFET with neat a sketch. 8M CO1

OR
6. Explain in detail about construction, principle of operation, applications, steady 14M CO1
state characteristics and switching characteristics of IGBT.
UNIT – IV
7. a) Discuss the construction, operation and steady state characteristics of GTO with 7M CO1
neat sketch.
b) Explain the construction and operational details of ETOs with a neat sketch. 7M CO2

OR
8. a) Explain the construction and operational details of RCT with a neat sketch. 7M CO1
 b) Compare various characterises between Phase controlled SCR, TRIAC and GTOs. 7M CO2

UNIT – V
9. a) Design a MOSFET gate drive circuit using RC circuit and PNP & NPN transistor. 7M CO3

b) Discuss the antisaturation control of BJT base drive circuit and derive collector 7M CO5
current and voltage with suitable equations.
OR
10. a) The base drive circuit in figure has VCC = 100 V, RC = 1.5 Ω, Vd1 = 2.1 V, Vd2 = 7M CO3
0.9 V, VBE = 0.7 V, VB = 15 V, Rb = 2.5 Ω and β=16. Calculate (i) the collector
current without clamping (ii) the collector – emitter voltage VCE (iii) the collector
current with clamping.

b) Explain in detail about opto-coupler gate drive circuit for power IGBT device. 7M CO2
 Code No.: 16MT12301 SET - 3
SREE VIDYANIKETHAN ENGINEERING COLLEGE
(An Autonomous Institution, Affiliated to JNTUA, Anantapur)
I M.Tech. I Semester (SVEC 16)Regular / Supplementary Examinations
ADVANCED POWER SEMICONDUCTOR DEVICES
(Power Electronics and Drives)
Time: 3 Hours Max. Marks: 70
Answer ONE question from each unit
All questions carry equal marks

UNIT – I
1. a) Explain in detail about reverse recovery characteristics of power diode with neat 7M CO1
sketch.
b) Demonstrate in detail about different types of power diodes. 7M CO1

OR
2. Discuss about briefly the Electro Magnetic interference impact due to switching of 14M CO4
power semiconductor devices.
UNIT – II
3. a) Explain in detail about steady state characteristics of thyristor with neat sketch. 6M CO1

b) For the circuit diagram shown in figure (i) calculate the maximum values of di/dt 8M CO3
and dv/dt for the SCR (ii) Determine the rms and average current ratings of the CO4
SCR for firing angle delays of 90° and 150° (iii) suggest a suitable voltage rating
of the SCR.

OR
4. a) List out various guidelines for the selection of heat sink. 6M CO2

b) What is snubber circuit? Give the design procedure of a snubber circuit for a 8M CO3
thyristor?
UNIT – III
5. a) Explain the construction and steady state characteristics of power BJT with a neat 7M CO1
schematic diagram.
b) Discuss in detail about construction and working of p - channel MOSFET with a 7M CO2
neat sketch.
OR
6. Explain in detail about the construction, principle of operation, applications, 14M CO1
steady state characteristics and switching characteristics of MOSFET.
UNIT – IV
7. a) Explain in detail about the construction and operational details of FET – CTHs 7M CO1
with neat sketch.
 b) Demonstrate in detail about the construction and operational details of 7M CO1
COOLMOS with neat sketch.
OR
8. a) Discuss in detail about the construction and operational details of SITHs with neat 8M CO1
sketch.
b) Compare various operating characterises of Phase controlled SCR, TRIAC and 6M CO2
GTOs.
UNIT – V
9. a) The base drive circuit in Fig has VCC = 400 V, RC = 4 Ω, Vd1 = 3.6 V, Vd2 = 0.9 V, 7M CO3
VBE = 0.7 V, VB = 15 V, Rb = 1.1 Ω and β=12. Find (i) the collector current
without clamping (ii) the collector – emitter voltage VCE (iii) the collector current
with clamping

b) Design a pulse transformer isolation technique based circuit for SCR switching 7M CO5
device.
OR
10. Construct a MOS – gated driver circuit with a neat block diagram and explain in 14M CO3
detail.
 Code No.: 16MT12301 SET - 4
SREE VIDYANIKETHAN ENGINEERING COLLEGE
(An Autonomous Institution, Affiliated to JNTUA, Anantapur)
I M.Tech. I Semester (SVEC 16)Regular / Supplementary Examinations
ADVANCED POWER SEMICONDUCTOR DEVICES
(Power Electronics and Drives)
Time: 3 Hours Max. Marks: 70
Answer ONE question from each unit
All questions carry equal marks

UNIT – I
1. a) Two diodes are connected in series as shown in fig. The resistance across the 7M CO3
diodes is R1 = R2 = 10 kΩ. The input DC voltage is 5 kV. The leakage currents are
Is1 = 25 mA and Is2 = 40 mA. Determine the voltage across diodes.

b) Analyse the various operating characteristics of an ideal switch. 7M CO2

OR
2. Discuss in detail about series and parallel connected diodes with mathematical 14M CO2
expressions.
UNIT – II
3. a) List out the significance of di/dt protection and dv/dt protection for thyristor 4M CO1

b) Explain in detail about di/dt and dv/dt rating improvements in thyristor 10M CO5

OR
4. Explain in detail about thyristor mounting techniques for thyristor. 14M CO5

UNIT – III
5. a) Construct the basic model and operating characterises of power BJT with a neat 6M CO3
sketch.

b) Explain the construction details and working of different types of MOSFET with 8M CO1
neat sketch.
OR
6. a) Compare various operating characteristics of BJT and MOSFET. 6M CO2

b) Two BJTs that are connected in parallel similar to Figure carry a total current of 8M CO3
IT= 200 A. The collector – emitter voltage of transistor Q1 is VCE1 = 1.5 V and that CO4
of transistor Q2 is VCE2 = 1.1 V. Determine the collector current of each transistor
and difference in current sharing if the current sharing series resistances are (i) R E1
= 10 mΩ and RE2 = 20 mΩ (ii) RE1 = RE2 = 20 mΩ.
 UNIT – IV
7. a) Demonstrate the construction and operational details of BCTs with neat sketch. 7M CO1

b) Develop the constructional model of SITs and discuss its operational details with 7M CO1
neat sketch.
OR
8. a) Explain the construction and operational details of MCTs with neat sketch. 7M CO1

b) Compare various operating characteristics of Bidirectional thyristors, Light – 7M CO2

activated thyristors, TRIAC and GTOs.
UNIT – V
9. a) Analyse importance and major considerations for designing isolation circuits for 7M CO2
single phase bridge inverter and gating signals.
b) Explain in detail about Photo – SCR coupled isolator. 7M CO1

OR
10. Develop RC triggering for thyristor with suitable circuit diagram. 14M CO5
 Code No.: 16MT12301 SET - 5
SREE VIDYANIKETHAN ENGINEERING COLLEGE
(An Autonomous Institution, Affiliated to JNTUA, Anantapur)
I M.Tech. I Semester (SVEC 16)Regular / Supplementary Examinations
ADVANCED POWER SEMICONDUCTOR DEVICES
(Power Electronics and Drives)
Time: 3 Hours Max. Marks: 70
Answer ONE question from each unit
All questions carry equal marks

UNIT – I
1. a) Explain in detail about characteristics of practical controlled switch with necessary 8M CO1
waveforms.
b) The reverse recovery time of a diode is trr=3 µs and the rate of the diode current is 6M CO2
di/dt = 30 A/µs. Determine (i) the storage charge and (ii) the peak reverse current.
OR
2. a) Discuss in detail about operation and steady state characteristics of power diode. 6M CO1

b) Two diodes are connected in series and the voltage across each diode is 8M CO3
maintained the same by connecting voltage sharing resistor, such that VD1 = VD2 =
2000 V and R1 = 100 kΩ. The v – i characteristics of the diodes are shown in
figure. Determine the leakage currents of each diode and the resistance R 2 across
diode D2.

UNIT – II
3. a) Illustrate the significance of gate protection of thyristor. 4M CO1

b) Explain in detail about di/dt and dv/dt rating improvements in thyristor. 10M CO4

OR
4. Determine the values of the di/dt inductance and the snubber circuit parameters R s 14M CO3
and Cs. Figure shows a thyristor controlling the power in a load resistance RL. The CO4
supply voltage is 240 V and the specified limits for di/dt and dv/dt for the SCR are
50 A/µ sec and 300 V/µ sec respectively.
 UNIT – III
5. a) Two MOSFETs that are connected in parallel similar to Figure carry a total 7M CO3
current of IT = 20 A. The drain to source voltage of MOSFET M1 is VDS1 = 2.5 V
and that of MOSFET M2 is VDS2 = 3 V. Determine the drain current of each
transistor and difference in current sharing if the current sharing series resistances
are (i) Rs1 = 0.3 Ω and Rs2 = 0.2 Ω (ii) Rs1 = Rs2 = 0.5 Ω.

b) Analyze the switching characteristics of power IGBT with neat sketch. 7M CO2

OR
6. a) Discuss the steady state and dynamic models of MOSFET in detail with neat 6M CO1
diagram
b) Illustrate in detail about how snubbers are designed for IGBT protection? 8M CO2

UNIT – IV
7. a) Explain in detail about switching characteristics of GTO with neat sketch. 7M CO1

b) Analyse the construction and operational details of ASCR with neat sketch. 7M CO2

OR
8. a) Explain the construction and operational details of IGCTs with neat sketch. 7M CO1

b) Compare various characteristics of Phase controlled SCR, Bidirectional thyristors 7M CO2

and GTOs.
UNIT – V
9. a) Explain in detail about the turn-on, turn-off control and proportional base control 7M CO5
methods of BJT base drive circuit.
b) Give the detail about pulse transformer gate drive circuit for IGBT. 7M CO5

OR
10. a) Design the triggering circuit of fig. The parameters of the UJT are Vs = 20 V, η = 7M CO3
0.66, Ip = 10 µA, Vv = 2.5 V and Iv = 10 mA. The frequency of oscillation is f= 1
kHz, and the width of the triggering pulse is tg= 50 µs. Assume VD = 0.5.
b) Analyse in detail about MOSFET drive ICs using floating gate drive supply and 7M CO2
pulse transformer methods.