Final data BSS 84 P

SIPMOS Small-Signal-Transistor
Feature Product Summary

· P-Channel VDS -60 V

· Enhancement mode RDS(on) 8 W

· Logic Level ID -0.17 A

· Avalanche rated SOT-23

· dv/dt rated 3

1 VPS05161

Drain
pin 3
Gate
Type Package Ordering Code Marking pin1
Source
BSS 84 P SOT-23 Q67041-S1417 YBs pin 2

Maximum Ratings, at TA = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TA=25°C -0.17
TA=70°C -0.14
Pulsed drain current I D puls -0.68
TA=25°C

Avalanche energy, single pulse EAS 2.6 mJ

ID=-0.17 A , VDD=-25V, RGS=25W

Avalanche energy, periodic limited by Tjmax EAR 0.036

Reverse diode dv/dt dv/dt -6 kV/µs
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 0.36 W
TA=25°C

Operating and storage temperature T j , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Page 1 2002-09-04
 Final data BSS 84 P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 200 K/W
(Pin 3)
SMD version, device on PCB: RthJA
@ min. footprint - - 350
@ 6 cm 2 cooling area 1) - - 300

Electrical Characteristics, at TA = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS -60 - - V
VGS=0, ID =-250µA

Gate threshold voltage, VGS = VDS VGS(th) -1 -1.5 -2

ID=-20µA

Zero gate voltage drain current I DSS µA

VDS=-60V, VGS=0, TA =25°C - -0.1 -1
VDS=-60V, VGS=0, TA =125°C - -10 -100
Gate-source leakage current I GSS - -10 -100 nA
VGS=-20V, VDS=0

Drain-source on-state resistance RDS(on) - 8 12 W

VGS=-4.5V, ID=-0.14A

Drain-source on-state resistance RDS(on) - 5.8 8

VGS=-10V, ID=-0.17A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

Page 2 2002-09-04
 Final data BSS 84 P
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS£2*ID*RDS(on)max , 0.065 0.13 - S
ID=-0.14A

Input capacitance Ciss VGS=0, VDS=-25V, - 15 19 pF

Output capacitance Coss f=1MHz - 6 8
Reverse transfer capacitance Crss - 2 3
Turn-on delay time td(on) VDD=-30V, VGS=-4.5V, - 6.7 10 ns
Rise time tr ID=-0.14A, RG=25W - 16.2 24.3
Turn-off delay time td(off) - 8.6 12.9
Fall time tf - 20.5 30.8

Gate Charge Characteristics

Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC
Gate to drain charge Qgd - 0.3 0.45
Gate charge total Qg VDD=-48V, ID=-0.17A, - 1 1.5
VGS=0 to -10V

Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V

Reverse Diode
Inverse diode continuous IS TA=25°C - - -0.17 A
forward current
Inv. diode direct current, pulsed ISM - - -0.68
Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V
Reverse recovery time trr VR=-30V, IF=lS, - 23 34 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 10 15 nC

Page 3 2002-09-04
 Final data BSS 84 P

1 Power dissipation 2 Drain current

Ptot = f (TA) ID = f (TA)
parameter: VGS ³ 10 V
BSS 84 P BSS 84 P
0.38 -0.18
W
A
0.32

-0.14
0.28
P tot

-0.12
0.24

ID
-0.1
0.2

-0.08
0.16

0.12 -0.06

0.08 -0.04

0.04 -0.02

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

3 Safe operating area 4 Transient thermal impedance

ID = f ( VDS ) ZthJA = f (tp )
parameter : D = 0 , TA = 25 °C parameter : D = tp /T
1 BSS 84 P
-10 10 3 BSS 84 P

A K/W

0
-10 tp = 170.0µs 10 2
Z thJA
ID

/I D
S 1 ms
VD
-1 =
-10 10 1
o n)
S( D = 0.50
RD 10 ms
0.20
0.10
0.05
-10 -2 10 0
single pulse 0.02
DC 0.01

-10 -3 -1 0 1 2
10 -1 -5 -4 -3 -2 -1 0 1 2 4
-10 -10 -10 V -10 10 10 10 10 10 10 10 10 s 10
VDS tp

Page 4 2002-09-04
 Final data BSS 84 P

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS) RDS(on) = f (ID)
parameter: Tj = 25 °C parameter: VGS ; Tj = 25 °C
BSS 84 P BSS 84 P
-0.4 Ptot = 0.36W 26
A
l
W a b c d e f g
k j i h VGS [V]
g a -2.5 22
-0.32 b -3.0
f 20

R DS(on)
c -3.5
-0.28 d -4.0 18
e
e -4.5
ID

-0.24 16
f -5.0
d g -5.5 14
-0.2 h -6.0
i -6.5
12
-0.16 c j -7.0 10 h
k -8.0
i
-0.12 l -10.0 8 j

6 k
-0.08 b l
4 V
GS [V] =
-0.04 a b c d e f g h i j k l
a 2 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0

0 0
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V -5 0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID = f ( VGS ); |VDS |³ 2 x |ID | x RDS(on)max gfs = f(ID)
parameter: Tj = 25 °C parameter: Tj = 25 °C
0.4 0.16

A S

0.3 0.12
g fs
- ID

0.25 0.1

0.2 0.08

0.15 0.06

0.1 0.04

0.05 0.02

0 0
0 1 2 3 4 V 6 0 0.04 0.08 0.12 0.16 A 0.22
- VGS -ID

Page 5 2002-09-04
 Final data BSS 84 P

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj ) VGS(th) = f (Tj )
parameter : ID = -0.17 A, VGS = -10 V parameter: VGS = VDS
BSS 84 P
21 2.4
W V

18
98%
2
16

- V GS(th)
R DS(on)

1.8
14
1.6
12 typ.

1.4
10
98%
1.2
8
2%
6 typ 1

4 0.8

2 0.6

0 0.4
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160
TA TA

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD)
parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs
2
10 -10 0 BSS 84 P

pF

Ciss -10 -1
IF
C

Coss
1
10

-10 -2
Crss Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

0
10 -10 -3
0 5 10 V 20 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
- VDS VSD

Page 6 2002-09-04
 Final data BSS 84 P

13 Typ. avalanche energy 14 Typ. gate charge

EAS = f (TA), parameter: VGS = f (QGate )
ID = -0.17 A , VDD = -25 V, RGS = 25 W parameter: ID = -0.17 A pulsed; Tj = 25 °C
BSS 84 P
3 -16

V
mJ

-12
E AS

V GS
2
-10
0,2 VDS max
0,8 VDS max
1.5 -8

-6
1

-4

0.5
-2

0 0
25 45 65 85 105 125 °C 165 0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5
TA QGate

15 Drain-source breakdown voltage

V(BR)DSS = f (TA)

BSS 84 P
-72

V
V (BR)DSS

-68

-66

-64

-62

-60

-58

-56

-54
-60 -20 20 60 100 °C 180
TA

Page 7 2002-09-04
 Final data BSS 84 P

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Page 8 2002-09-04