BD241, BD241A, BD241B, BD241C

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the

BD242 Series
TO-220 PACKAGE
● 40 W at 25°C Case Temperature (TOP VIEW)

● 3 A Continuous Collector Current

B 1
● 5 A Peak Collector Current C 2

● Customer-Specified Selections Available E 3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
BD241 55
BD241A 70
Collector-emitter voltage (RBE = 100 Ω) VCER V
BD241B 90
BD241C 115
BD241 45
BD241A 60
Collector-emitter voltage (IC = 30 mA) V CEO V
BD241B 80
BD241C 100
Emitter-base voltage VEBO 5 V
Continuous collector current IC 3 A
Peak collector current (see Note 1) ICM 5 A
Continuous base current IB 1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 40 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) ½LIC2 32 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.

 


JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BD241 45
Collector-emitter BD241A 60
V(BR)CEO IC = 30 mA IB = 0 V
breakdown voltage BD241B 80
(see Note 5)
BD241C 100
VCE = 55 V VBE = 0 BD241 0.2
Collector-emitter VCE = 70 V VBE = 0 BD241A 0.2
ICES mA
cut-off current VCE = 90 V VBE = 0 BD241B 0.2
VCE = 115 V VBE = 0 BD241C 0.2
Collector cut-off VCE = 30 V IB = 0 BD241/241A 0.3
ICEO mA
current VCE = 60 V IB = 0 BD241B/241C 0.3
Emitter cut-off
IEBO VEB = 5V IC = 0 1 mA
current
Forward current VCE = 4V IC = 1A 25
hFE (see Notes 5 and 6)
transfer ratio VCE = 4V IC = 3A 10
Collector-emitter
V CE(sat) IB = 0.6 A IC = 3A (see Notes 5 and 6) 1.2 V
saturation voltage
Base-emitter
VBE VCE = 4V IC = 3A (see Notes 5 and 6) 1.8 V
voltage
Small signal forward
hfe VCE = 10 V IC = 0.5 A f = 1 kHz 20
current transfer ratio
Small signal forward
|hfe | VCE = 10 V IC = 0.5 A f = 1 MHz 3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.125 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

†
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn-on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A 0.3 µs
toff Turn-off time VBE(off) = -3.7 V RL = 20 Ω tp = 20 µs, dc ≤ 2% 1 µs
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

 


JUNE 1973 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCS631AH TCS631AB
1000 10

VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE = 4 V TC = 25°C
tp = 300 µs, duty cycle < 2% TC = 80°C
hFE - DC Current Gain

1·0

100

0·1

IC = 100 mA
IC = 300 mA
IC = 1A
IC = 3A
10 0·01
0·01 0·1 1·0 10 0·1 1·0 10 100 1000
IC - Collector Current - A IB - Base Current - mA

Figure 1. Figure 2.

BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS631AC
1·0
VCE = 4 V
TC = 25°C
VBE - Base-Emitter Voltage - V

0·9

0·8

0·7

0·6

0·5
0·01 0·1 1·0 10
IC - Collector Current - A

Figure 3.

 


JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD241, BD241A, BD241B, BD241C
NPN SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS631AG
100
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
IC - Collector Current - A

10

1·0

0·1
BD241
BD241A
BD241B
BD241C

0·01
1·0 10 100 1000
VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs
CASE TEMPERATURE
TIS631AA
50
Ptot - Maximum Power Dissipation - W

40

30

20

10

0
0 25 50 75 100 125 150
TC - Case Temperature - °C

Figure 5.

 


JUNE 1973 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.