PSMN165-200K: 1. Description

PSMN165-200K
N-channel enhancement mode field-effect transistor

Rev. 01 — 16 January 2001 Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN165-200K in SOT96-1 (SO8).
2. Features
■ Very low on-state resistance
■ Fast switching
■ TrenchMOS™ technology.
3. Applications
■ DC to DC convertor
■ Computer motherboards
c
■ Switch mode power supplies.
c
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
8 5 d
4 gate (g)
5,6,7,8 drain (d)
g
1 4
Top view MBK187 MBB076 s
SOT96-1 (SO8)
1. SiliconMAX is a trademark of Royal Philips Electronics.

2. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors PSMN165-200K
5. Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 200 V
ID drain current (DC) Tsp = 80 °C − 2.9 A
Ptot total power dissipation Tsp = 80 °C − 3.5 W
Tj junction temperature − 150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID = 2.5 A; Tj = 25 °C 130 165 mΩ
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C − 200 V
VGS gate-source voltage (DC) − ±20 V
ID drain current (DC) Tsp = 80 °C; Figure 2 and 3 − 2.9 A
IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs − 20 A
Ptot total power dissipation Tsp = 80 °C; Figure 1 − 3.5 W
Tstg storage temperature −55 +150 °C
Tj operating junction temperature −55 +150 °C
Source-drain diode
IS source (diode forward) current (DC) Tsp = 80 °C − 3.1 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs − 20 A
9397 750 07896 © Philips Electronics N.V. 2001. All rights reserved.
Product specification Rev. 01 — 16 January 2001 2 of 13

03aa25
03aa17
120 120
Pder Ider
(%) (%)
100 100
80 80
60 60
40 40
20 20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Tsp (oC)
Tsp (oC)
P tot VGS ≥ 5 V
P der = ---------------------- × 100%
P °
ID
tot ( 25 C ) I der = ------------------- × 100%
I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of solder point temperature. function of solder point temperature.
03ae06
102
RDSon = VDS/ ID
ID
(A)
10 tp = 10 µs
100 µs
1 ms
1
10 ms
tp
P δ=
T
D.C. 100 ms
10-1
tp t
T
10-2
1 10 102 VDS (V) 103
Tsp = 25 °C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-sp) thermal resistance from junction to solder mounted on a metal clad substrate; Figure 4 20 K/W
point
7.1 Transient thermal impedance
03ae05
102
Zth(j-sp)
(K/W)
10 δ = 0.5
0.2
0.1
0.05
1
0.02 tp
P δ=
T
10-1
single pulse tp t
T
10-2
10-4 10-3 10-2 10-1 1 10 tp (s) 102
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 200 240 − V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C 2 − 4 V
Tj = 150 °C 1.2 − − V
Tj = −55 °C − − 6 V
IDSS drain-source leakage current VDS = 160 V; VGS = 0 V; Tj = 25 °C − − 1 µA
VDS = 200 V; VGS = 0 V; Tj = 150 °C − − 0.5 mA
IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V − − 100 nA
RDSon drain-source on-state resistance VGS = 10 V; ID = 2.5 A; Figure 7 and 8
Tj = 25 °C − 130 165 mΩ
Tj = 150 °C − 325 413 mΩ
Dynamic characteristics
gfs forward transconductance VDS = 15 V; ID = 2.9 A; Figure 11 − 10 − S
Qg(tot) total gate charge ID = 3 A; VDD = 100 V; VGS = 10 V; Figure 14 − 40 − nC
Qgs gate-source charge − 4.5 − nC
Qgd gate-drain (Miller) charge − 12 16.5 nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 − 1330 − pF
Coss output capacitance − 140 − pF
Crss reverse transfer capacitance − 70 − pF
td(on) turn-on delay time VDD = 100 V; RD = 100 Ω; − 12 25 ns
tr rise time VGS = 10 V; RG = 6 Ω − 11 25 ns
td(off) turn-off delay time − 50 80 ns
tf fall time − 25 40 ns
Source-drain (reverse) diode
VSD source-drain (diode forward) voltage IS = 2.3 A; VGS = 0 V; Figure 13 − 0.7 1.1 V
trr reverse recovery time IS = 2.9 A; dIS/dt = −100 A/µs; VGS = 0 V − 105 − ns
Qr recovery charge − 0.45 − µC

03ae07 03ae09
20 20
VGS = 10 V 5 V VDS > ID X RDSon
ID ID
(A) (A)
15 15
4.5 V
10 10
5 5
4V Tj = 150 ºC 25 ºC
3.5 V
0 0
0 1 2 3 4 VDS (V) 5 0 1 2 3 4 VGS (V) 5
Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon

Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values. function of gate-source voltage; typical values.
03aa31
03ae08 a 3
0.3 2.8
VGS = 4 V 4.5 V Tj = 25 ºC 2.6
RDSon
2.4
(Ω)
2.2
0.25 2
1.8
1.6
1.4
0.2 5V 1.2
1
10 V 0.8
0.6
0.15
0.4
0.2
0
0.1 -60 -20 20 60 100 140 180
0 5 10 15 ID (A) 20 Tj (oC)
Tj = 25 °C R DSon
a = ---------------------------
-
R °
DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain-source on-state resistance
of drain current; typical values. factor as a function of junction temperature.

03aa32 03aa35
5 10-1
4.5 ID
VGS(th)
4 (A)
(V) max. 10-2
3.5
3 10-3
typ.
2.5 min typ max
2 10-4
min
1.5
1
10-5
0.5
0
10-6
-60 -20 20 60 100 140 180
0 1 2 3 4 5
Tj (oC) VGS (V)
ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V

Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature. gate-source voltage.
03ae10 03ae12
30 104
gfs VDS > ID X RDSon Ciss,
(S) Coss,
25 Tj = 25 ºC Crss
(pF) Ciss
20 103
150 ºC
15
Coss
10 102
Crss
0 10
0 5 10 15 ID (A) 20 10-1 1 10 VDS (V) 102
Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz

Fig 11. Forward transconductance as a function of Fig 12. Input, output and reverse transfer capacitances
drain current; typical values. as a function of drain-source voltage; typical
values.

03ae11 03ae13
20 10
VGS = 0 V ID = 3 A
VGS
IS
(V) Tj = 25 ºC
(A)
8
15 VDD = 40 V 100 V 160 V
10
5
Tj = 150 ºC 25 ºC
2
0 0
0 0.2 0.4 0.6 0.8 VSD (V) 1 0 15 30 QG (nC) 45
Tj = 25 °C and 150 °C; VGS = 0 V ID = 3 A; VDD = 40 V, 100 V and 160 V

Fig 13. Source (diode forward) current as a function of Fig 14. Gate-source voltage as a function of gate
source-drain (diode forward) voltage; typical charge; typical values.
values.

9. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
D E A
X
D E A
X
c
y HE
c v M A
y HE v M A
Z
Z 5
8
8 5
Q
A2 Q
A2 (A 3) A
A (A 3) A
A1 1
pin 1 index
pin 1 index
θ θ
Lp Lp
1 L L
1 44
e w M detail X
e bp w M detail X
bp
0 2.5 5 mm
0 2.5
scale 5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
UNIT
DIMENSIONS (inch A1
dimensions
max. Aare A3
2 derived b p the
from c original
D E dimensions)
mm e HE (1) (2) L Lp Q v w y Z (1) θ
A 0.25 1.45 0.49 0.25 (1)

5.0 4.0 6.2 1.0 0.7 0.7
UNIT mm
max.
1.75
A1 A2
0.10 A3
1.25
0.25b p
0.36 c 0.19 D 4.8
(2)
E3.8 1.27
e HE
5.8
1.05L
0.4 L p 0.6 Q
0.25 v0.25 0.1
w y
0.3 Zo(1) θ
8
0.010 0.057 0o
inches 0.25
0.069 1.45 0.490.0190.25
0.01
0.0100 0.20
5.0 0.16
4.0 0.050
0.244
6.2 0.041 0.0391.00.028 0.70.01 0.01 0.004
0.028
0.7
mm 1.75 0.004 0.049
0.25 0.014 0.0075 0.19 0.15 1.27 0.228 1.05 0.016 0.024 0.25 0.25 0.012
0.1 o
0.10 1.25 0.36 0.19 4.8 3.8 5.8 0.4 0.6 0.3 8
Notes 0.010 0.057 0.019 0.0100 0.20 0.16 0.244 0.039 0.028 0.028 0o
inches 0.069 0.01 0.050 0.041 0.01 0.01 0.004
1. Plastic0.004
or metal 0.049
protrusions of 0.150.014 0.0075 per0.19
mm maximum side are0.15
not included. 0.228 0.016 0.024 0.012
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
Notes
OUTLINE
1. Plastic or metal protrusions of 0.15 mm maximum per sideREFERENCES
are not included. EUROPEAN
ISSUE DATE
VERSION PROJECTION
2. Plastic or metal protrusions of 0.25IEC JEDEC
mm maximum per EIAJ
side are not included.
97-05-22
SOT96-1 076E03 MS-012
99-12-27
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-22
SOT96-1 076E03 MS-012
99-12-27
Fig 15. SOT96-1 (SO8).

10. Revision history
Table 6: Revision history

Rev Date CPCN Description
01 20010116 - Product specification; initial version

11. Data sheet status
Datasheet status Product status Definition [1]

Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions 13. Disclaimers

Short-form specification — The data in a short-form specification is Life support — These products are not designed for use in life support
extracted from a full data sheet with the same type number and title. For appliances, devices, or systems where malfunction of these products can
detailed information see the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips Semiconductors
Limiting values definition — Limiting values given are in accordance with customers using or selling these products for use in such applications do so
the Absolute Maximum Rating System (IEC 60134). Stress above one or at their own risk and agree to fully indemnify Philips Semiconductors for any
more of the limiting values may cause permanent damage to the device. damages resulting from such application.
These are stress ratings only and operation of the device at these or at any Right to make changes — Philips Semiconductors reserves the right to
other conditions above those given in the Characteristics sections of the make changes, without notice, in the products, including circuits, standard
specification is not implied. Exposure to limiting values for extended periods cells, and/or software, described or contained herein in order to improve
may affect device reliability. design and/or performance. Philips Semiconductors assumes no
Application information — Applications that are described herein for any responsibility or liability for the use of any of these products, conveys no
of these products are for illustrative purposes only. Philips Semiconductors licence or title under any patent, copyright, or mask work right to these
make no representation or warranty that such applications will be suitable for products, and makes no representations or warranties that these products
the specified use without further testing or modification. are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 07896 © Philips Electronics N.V. 2001 All rights reserved.

Philips Semiconductors - a worldwide company

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Marketing Communications,
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The Netherlands, Fax. +31 40 272 4825 (SCA71)

Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance . . . . . . . . . . . . . . 4
8 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Philips Electronics N.V. 2001. Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 16 January 2001 Document order number: 9397 750 07896

PSMN165-200K: 1. Description

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PSMN165-200K

N-channel enhancement mode field-effect transistor

1. SiliconMAX is a trademark of Royal Philips Electronics.

5. Quick reference data

Product specification Rev. 01 — 16 January 2001 2 of 13

0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175

Tsp = 25 °C; IDM is single pulse

Product specification Rev. 01 — 16 January 2001 3 of 13

7.1 Transient thermal impedance

Product specification Rev. 01 — 16 January 2001 4 of 13

Product specification Rev. 01 — 16 January 2001 5 of 13

Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon

Product specification Rev. 01 — 16 January 2001 6 of 13

ID = 1 mA; VDS = VGS Tj = 25 °C; VDS = 5 V

Tj = 25 °C and 150 °C; VDS > ID × RDSon VGS = 0 V; f = 1 MHz

Product specification Rev. 01 — 16 January 2001 7 of 13

Tj = 25 °C and 150 °C; VGS = 0 V ID = 3 A; VDD = 40 V, 100 V and 160 V

Product specification Rev. 01 — 16 January 2001 8 of 13

A 0.25 1.45 0.49 0.25 (1)

Fig 15. SOT96-1 (SO8).

Product specification Rev. 01 — 16 January 2001 9 of 13

10. Revision history

Table 6: Revision history

Product specification Rev. 01 — 16 January 2001 10 of 13

11. Data sheet status

Datasheet status Product status Definition [1]

12. Definitions 13. Disclaimers

Product specification Rev. 01 — 16 January 2001 11 of 13

Philips Semiconductors - a worldwide company

Product specification Rev. 01 — 16 January 2001 12 of 13

© Philips Electronics N.V. 2001. Printed in The Netherlands

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