MTECH 17-19 CVN VLSI

Nanoelectronics Lab
Assignment 1

K Sreehari
MT17MVD007
Q.1 This exercise is intended to help you prepare to run MOSFET simulations using the software
package Synopsys Sentaurus, in preparation for your design project.
(a) After looking into the user guide on using Sentaurus, familiarize yourself with the basic
simulation frames. Briefly describe the purpose of each simulation component:
(i) Sentaurus Structure Editor (SDE)
(ii) Sentaurus Device (SDEVICE)
(iii) Sentaurus Inspect (INSPECT)
(b) Preprocess the whole simulation flow and find the node in the SDE simulation which gives you
the generated device structure. Take the snaps and mail it.
(c) Extract and plot the absolute doping concentration as a function of distance along the channel
direction (from the source region to the drain region), at a distance 2 nm beneath the SiO 2/Si
interface.

Ans)
Sentaurus Structure Editor (SDE)

Sentaurus Structure Editor can be used as a two-dimensional (2D) or three-dimensional (3D)

structure editor, and a 3D process emulator to create TCAD devices.

In Sentaurus Structure Editor, structures are generated or edited interactively using the
graphical user interface (GUI). Doping profiles and meshing strategies can also be defined
interactively. Sentaurus Structure Editor features an interface to configure and call the
Synopsys meshing engines. In addition, it generates the necessary input files (the TDR
boundary file and mesh command file) for the meshing engines, which generate the TDR grid
and data file for the device structure.

Sentaurus Device (SDEVICE)

Sentaurus Device simulates numerically the electrical behavior of a single semiconductor

device in isolation or several physical devices combined in a circuit. Terminal currents,
voltages, and charges are computed based on a set of physical device equations that describes
the carrier distribution and conduction mechanisms. A real semiconductor device, such as a
transistor, is represented in the simulator as a ‘virtual’ device whose physical properties are
discretized onto a nonuniform ‘grid’ (or ‘mesh’) of nodes.

Sentaurus Inspect (INSPECT)

Inspect can be used to display and analyze curves. It features a graphical user interface (GUI),
a script language, and an interactive language for computations with curves.
An Inspect curve is a sequence of points defined by an array of x-coordinates and y-
coordinates. An array of coordinates that can be mapped to one of the axes is referred to as a
dataset. With Inspect, datasets can be combined and mapped to the x-axis and y-axis to create
and display a curve.

Inspect works on data consisting of clusters of named one-dimensional arrays of floating-point

data, which are called datasets. Each cluster consists of two or more datasets of equal length,
where elements with an identical index represent related values. Datasets inside a cluster can
be divided into named groups. By pairing related values of two datasets from the same cluster,
points (or nodes) of a discrete curve are obtained.
B) Device Structure for BULK MOSFET

C) Concentration Profile of The MOSFET

Bulk Concentration = 1e +5
Source/ Drain Conc = 1e+19
Q.2 (a) For your assigned technology node, calculate V th , I ON , I OFF , SS, DIBL, intrinsic gate
delay(C G .V DD /I ON ), g m
and f T for Bulk MOSFET and SOI MOSFET. Comment on the change of parameter value.
(b)Compare for Bulk and SOI, how the following parameters change with technology node from
32-16nm
1. V th 2. I ON 3. I OFF 4. SS 5. DIBL 6. intrinsic gate delay(C G .V DD /I ON ) 7. g m and 8. f T
Comment on how the scaling affects this parameters.

Results Observed

Parameter SOI MOSFET BULK MOSFET

VTH 0.41 0.41
ION 0.22mA 0.66mA
IOFF 0.9uA 85uA
SS 147mV/decade 197 mV/decade
DIBL 0.07 0.18
Intrinsic Gate
Delay
Gm 0.38mA/V 1.15mA/V
fT

Plots

Conclusions
1.Leakage current decreases in soi strucure because of the buried oxide present ( observed through
Ioff )
2.Subthreshold swing is low in SOI implies faster the switching speed