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Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Rth (ch-c) Channel to case 0.40 °C/W
Thermal resistance
Rth (ch-a) Channel to ambient 50.0 °C/W
Note *1 : Tch≤150°C Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω See to the 'Transient Themal impeadance' graph.
E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph. Note *5 : I F ≤-I D, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
FMH23N50E FUJI POWER MOSFET
10
2 t=
300 1µs
10µs
250 10
1
100µs
200
0 1ms
10
PD [W]
ID [A]
150
-1
10
100 Power loss waveform : D.C.
Square waveform
-2
10 PD
50
t
-3
0 10
0 25 50 75 100 125 150 10
0
10
1 2
10 10
3
VDS [V]
Tc [° C]
60
10V
50 6.0V 10
5.5V
40
ID[A]
ID [A]
30 5.0V
1
20
VGS=4.5V
10
0.1
0
0 4 8 12 16 20 24 0 1 2 3 4 5 6 7 8 9 10
VDS [V] VGS[V]
0.8 VGS=4.5V
5.0V
0.7
0.6
10
RDS(on) [ Ω ]
0.5
5.5V 6.0V
gfs [S]
0.4 10V
0.3
1
0.2
0.1
0.0
0.1
0.1 1 10 100 0 10 20 30 40 50 60
ID [A] ID [A]
2
FMH23N50E FUJI POWER MOSFET
5.5
5.0
0.8
4.5
4.0
VGS(th) [V]
0.6
3.5
RDS(on) [ Ω ]
max.
3.0
typ.
0.4 2.5
max.
2.0 min.
typ. 1.5
0.2
1.0
0.5
0.0 0.0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]
Ciss
12 Vcc= 100V
250V
400V 3
10
10
8
C [pF]
VGS [V]
2 Coss
10
6
4
1
10 Crss
0 10
0
td(off)
2 tf
10 10
IF [A]
t [ns]
td(on)
1
1 10 tr
0
0.1 10
-1 0 1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 10 10
VSD [V] ID [A]
3
FMH23N50E FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch Maximum Transient Thermal Impedance
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=23A Zth(ch-c)=f(t):D=0
1
10
800 IAS=23A
700 0
10
Zth(ch-c) [°C/W]
600
IAS=14A
-1
10
500
EAV [mJ]
400
IAS=10A 10
-2
300
200 10-3
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
100 t [sec]
0
0 25 50 75 100 125 150
starting Tch [°C]
4
FMH23N50E FUJI POWER MOSFET
WARNING
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