Questions On Transistor Characteristics

Junction Transistor - Electronic Devices and Cir... about:reader?url=https://www.sanfoundry.com/...
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Junction Transistor - Electronic

Devices and Circuits Questions
and Answers
by staff10
5-6 minutes
This set of Electronic Devices and Circuits Multiple Choice

Questions & Answers (MCQs) focuses on “The Junction
Transistor”.
1. The advantages over the vacuum triode for a junction

transistor is_________
a) high power consumption
b) high efficiency
c) large size
d) less doping
View Answer
Answer: b
Explanation: A junction transistor is an analogous to a
vacuum triode. The main difference between them is that a
transistor is a current device while a vacuum triode is a
voltage device. The advantages of a transistor over a
vacuum triode are long life, high efficiency, light weight,
smaller in size, less power consumption.
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2. What is the left hand section of a junction transistor

called?
a) base
b) collector
c) emitter
d) depletion region
View Answer
Answer: c
Explanation: The main function of this section is to supply
majority charge carriers to the base. Hence it is more
heavily doped in comparison to other regions. This forms
the left hand section of the transistor.
3. In an NPN transistor, the arrow is pointed

towards_________
a) the collector
b) the base
c) depends on the configuration
d) the emitter
View Answer
Answer: d
Explanation: As regards to the symbols, the arrow head is
always at the emitter. The direction indicates the
conventional direction of current flow. In case of PNP
transistor, it is from base to emitter.
4. Which of the following is true in construction of a

transistor?
a) the collector dissipates lesser power
b) the emitter supplies minority carriers
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c) the collector is made physically larger than the emitter

region
d) the collector collects minority charge carriers
View Answer
Answer: c
Explanation: In most of the transistors, the collector is made
larger than emitter region. This is due to the fact that
collector has to dissipate much greater power. The collector
and emitter cannot be interchanged.
5. In the operation of an NPN transistor, the electrons cross

which region?
a) emitter region
b) the region where there is high depletion
c) the region where there is low depletion
d) P type base region
View Answer
Answer: d
Explanation: The electrons in the emitter region are repelled
by the negative terminal of the battery towards the emitter
junction. The potential barrier at the junction is reduced due
to forward bias and base region is very thin and lightly
doped, electrons cross the P type base region.
6. Which of the following are true for a PNP transistor?

a) the emitter current is less than the collector current
b) the collector current is less than the emitter current
c) the electrons are majority charge carriers
d) the holes are the minority charge carriers
View Answer
3 of 6 3/16/18, 9:36 AM
Answer: b
Explanation: The 2 – 5% of holes is lost in recombination
with electrons in the base region. The majority charge
carriers are holes for a PNP transistor. Thus the collector
current is slightly less than the emitter current.
7. In the saturated region, the transistor acts like

a_________
a) poor transistor
b) amplifier
c) open switch
d) closed switch
View Answer
Answer: d
Explanation: In saturated mode, both emitter and collector
are forward biased. The negative of the battery is
connected to emitter and similarly the positive terminals of
batteries are connected to the base. The transistor now
acts like a closed switch.
8. When does the transistor act like an open switch?

a) cut off region
b) inverted region
c) saturated region
d) active region
View Answer
Answer: a
Explanation: In cut off region, both the junctions are reverse
biased. The transistor has practically zero current because
the emitter does not emit charge carriers to the base. So,
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the transistor acts as open switch.
9. If the emitter-base junction is forward biased and the

collector-base junction is reverse biased, what will be the
region of operation for a transistor?
a) cut off region
b) saturated region
c) inverted region
d) active region
View Answer
Answer: d
Explanation: When the emitter-base junction is forward
biased and the collector-base junction is reverse biased, the
transistor is used for amplification. A battery is connected to
collector base circuit. The positive terminal is connected to
the collector while the negative is connected to the base.
10. The transfer of a signal in a transistor is_________

a) low to high resistance
b) high to low resistance
c) collector to base junction
d) emitter to base junction
View Answer
Answer: a
Explanation: A forward biased emitter base junction has a
low resistance path. A reversed biased junction has a high
resistance path. The weak signal is introduced in a low
resistance circuit and the output is taken from the high
resistance circuit.
Sanfoundry Global Education & Learning Series –
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Electronic Devices and Circuits.
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here is complete set of 1000+ Multiple Choice Questions
and Answers.
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Electronic Devices and Circuits Aptitude Test about:reader?url=https://www.sanfoundry.com/...
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Electronic Devices and Circuits

Aptitude Test
by staff10
4-5 minutes
This set of Electronic Devices and Circuits Questions and

Answers for Aptitude test focuses on “The Transistor as an
Amplifier”.
1. The emitter current consist of_________

a) electrons passing from collector to emitter
b) holes crossing from base to collector
c) electron current Ine constituted by electrons
d) immobile charge carriers
View Answer
Answer: c
Explanation: The emitter current consists of two parts. It
consists of hole current IpE constituted by holes. The other
part is that it consists the electron current InE constituted by
electrons.
2. The total emitter current (IE) is given by_________

a) IE = IpE * InE
b) IE = IpE – InE
c) IE = IpE / InE
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d) IE = IpE + InE
View Answer
Answer: d
Explanation: The total emitter current is the sum of InE and
IpE. In commercial transistors, the doping of emitter region
is made much heavier than base. Hence current by majority
charge carriers InE is negligible when compared to current
by minority charge carriers IpE.
3. A common base transistor amplifier has an input

resistance of 20Ω and output resistance of 100kΩ. If a
signal of 400mV is applied between emitter and base, find
the voltage amplification. Assume αac to be one.
a) 20
b) 50
c) 30
d) 25
View Answer
Answer: b
Explanation: IE = V/R=400M/20=20mA
IC=αIE= 1*20mA=20mA. VO=IC*RL=20m*1k=20V
Amplification, A= VO/signal voltage=20V/400m=50.
4. The amplification factor for a transistor is given

by_________
a) A=αRL/re
b) A=αRLre
c) A=re/ αRL
d) A=RL/reα
View Answer
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Answer: a
Explanation: One of the most important application of a
transistor is an amplifier. A small change in signal voltage
produces an appreciable change in emitter current because
the input circuit has low resistance (α=ΔIC/IE).
5. Why is the silicon mostly chosen when compared to

germanium?
a) low power consumption
b) high efficiency
c) greater working temperature
d) large ICBO
View Answer
Answer: c
Explanation: The normal working temperature of
germanium is approximately 70°C .The normal working
temperature of silicon is approximately 150°C. The other
advantages of using a silicon material are, it has a smaller
ICBO and its variations are smaller with temperature.
6. The change in output voltage across the load resistor for

a transistor during amplification is_________
a) RL *α*ΔIE
b) RL *ΔIE/α
c) RL *α2*ΔIE
d) RL *α1/2*ΔIE
View Answer
Answer: a
Explanation: A small change of voltage ΔVi between emitter
and base causes a relatively large emitter current change
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ΔIE. We define by the symbol α that fraction of this current

change which is collected and passes through RL.
7. A transistor has an IC of 100mA and IB of 0.5mA. What is

the value of αdc?
a) 0.565
b) 0.754
c) 1.24
d) 0.995
View Answer
Answer: d
Explanation: Emitter current IE=IC+IB=100+0.5=100.5mA.
αdc=IC/IE=100/100.5=0.995.
8. A germanium transistor used as an amplifier has a

collector cut off current ICBO=10µA at a temperature 27°C
and β=50. What is the collector current when the base
current is 0.25mA?
a) 10.76mA
b) 13.01mA
c) 15.67mA
d) 11.88Ma
View Answer
Answer: b
Explanation: IC=βIB+(1+β)ICBO
IC=50*0.25/1000+51/100000=13.01mA.
9. In a PNP germanium transistor, the cut in voltage is

about_________
a) -0.1V
b) -0.01V
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c) -0.05V
d) -0.07V
View Answer
Answer: a
Explanation: The cut in voltage of germanium is lower than
that of silicon. If both germanium and silicon are in parallel,
Ge starts conducting earlier and stops silicon from
conducting.
10. In a PNP transistor operating in active region, the main

stream of current is_________
a) drift of holes
b) drift of electrons
c) diffusion of holes
d) diffusion of electrons
View Answer
Answer: c
Explanation: The emitter-base junction is forward biased
while collector-base junction is reversed biased. The
transistor now operates in active region. Here, it can be
used for amplification purpose.

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Aptitude test, here is complete set of 1000+ Multiple Choice
Questions and Answers.
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Transistor Construction - Electronic Devices and... about:reader?url=https://www.sanfoundry.com/...
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Transistor Construction -
Electronic Devices and Circuits
Questions and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Transistor
Construction”.
1. Which gas is used to fill the chamber in the grown

junction type transistor construction?
a) helium
b) boron
c) nitrogen
d) oxygen
View Answer
Answer: c
Explanation: In the process of transistor construction, a
crucible is placed in the chamber. This chamber consists of
hydrogen or nitrogen. These gases help in the prevention of
oxidation. It also contains purified Ge or Si at a temperature
few degrees above its melting point.
2. In a grown junction type construction, the method used
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form a junction transistor is_________

a) alloy type diffusion
b) mesa type
c) speed variation method
d) fused junction type
View Answer
Answer: c
Explanation: The grown junction may be formed by
suddenly varying the rate of pulling the seed crystal from
the melt. This method is based on the fact that proportion in
which N and P type impurities crystallise i.e.., enter the
grown crystal depends on the rate of pulling.
3. Which of the following methods take impurity variation

method for transistor construction?
a) alloy type diffusion
b) grown junction type
c) epitaxial type
d) mesa type
View Answer
Answer: b
Explanation: In impurity variation method, the impurity
content of the semiconductor is altered in its type as well as
the quantity. For example, in making NPN germanium
grown junction transistor, a small type of N type impurity is
added to molten germanium and the crystal growth is
started.
4. Which of the following is true about grown junction type

construction?
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a) N type impurity is added to P type impurity

b) Boron helps in the prevention of oxidation
c) The seed is pulled to a large distance for a correct
growth
d) Slow pulling leads to the formation of P type crystal
View Answer
Answer: d
Explanation: This method is based on the fact that
proportion in which N and P type impurities crystallise i.e..,
enter the grown crystal depends on the rate of pulling. If the
pulling rate is small, a P type crystal is grown. If the pulling
rate is fast, an N type crystal is grown.
5. What is the melting point of indium in alloy type

transistors?
a) 300°C
b) 200°C
c) 155°C
d) 100°C
View Answer
Answer: c
Explanation: This is similar to soldering and PNP transistor
is generally is made by this process. In this method, first of
all N type germanium is obtained. The N type wafer and
indium dots are placed in a furnace and heated to about
500°C.
6. The non rectifying base contact is made from_________

a) welding a strip
b) germanium
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c) indium
d) graphite
View Answer
Answer: a
Explanation: Leads for emitter and collector are soldered to
the dots making non rectifying contacts. Further, non
rectifying base contact is usually made from a welding a
strip or loop of gold plated wire to the base plate.
7. What is the thickness of wafer in the alloy type

transistors?
a) 1-2m inch
b) 3-5m inch
c) 5-6m inch
d) 4-7m inch
View Answer
Answer: b
Explanation: The wafer of crystal has a 3-5m inch thickness
and 80m inch square. This is placed in a graphite jig with a
dot of prepared indium. One dot of an indium is 3 times
larger than the other.
8. The larger dot of the indium is used as_________

a) base
b) emitter
c) control pin
d) collector
View Answer
Answer: d
Explanation: The wafer is placed in a graphite jig with a dot
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of prepared indium. One dot of an indium is 3 times larger

than the other. Finally the larger dot is used as collector.
The smaller dot is used as emitter.
9. The electrical properties of a transistor in alloy type

construction is determined by_________
a) space between the junctions in the wafer
b) proportions of N and P type impurities
c) the pulling rate of crystal
d) uniformity of the crystal lattice
View Answer
Answer: a
Explanation: Large area collector junction helps in collecting
most of the holes emitted from the emitter ensuring that the
collector current almost equals the emitter current. The
spacing between two junctions inside germanium wafer is
very small and determines the electrical properties.
10. The grown junction type transistors is generally used

for_________
a) PNP transistors
b) NPN transistors
c) Both transistors
d) Depends on the material used
View Answer
Answer: b
Explanation: Grown junction type transistors are
manufactured through growing single large crystal which is
slowly pulled from the melt in crystal growing furnace. This
is generally used for NPN transistors.
5 of 6 3/16/18, 9:41 AM


and Answers.
6 of 6 3/16/18, 9:41 AM
Common Base Configuration Questions and An... about:reader?url=https://www.sanfoundry.com/...
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Common Base Configuration

by staff10
4-5 minutes

Questions & Answers (MCQs) focuses on “The Common
Base Configuration”.
1. The AC current gain in a common base configuration

is_________
a) -ΔIC/ΔIE
b) ΔIC/ΔIE
c) ΔIE/ΔIC
d) -ΔIE/ΔIC
View Answer
Answer: a
Explanation: The AC current gain is denoted by αac. The
ratio of change in collector current to the change in emitter
current at constant collector base voltage is defined as
current amplification factor.
2. The value of αac for all practical purposes, for

commercial transistors range from_________
a) 0.5-0.6
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b) 0.7-0.77
c) 0.8-0.88
d) 0.9-0.99
View Answer
Answer: d
Explanation: For all practical purposes, αac=αdc=α and
practical values in commercial transistors range from
0.9-0.99. It is the measure of the quality of a transistor.
Higher is the value of α, better is the transistor in the sense
that collector current approaches the emitter current.
3. A transistor has an IC of 100mA and IB of 0.5mA. What is

the value of αdc?
a) 0.787
b) 0.995
c) 0.543
d) 0.659
View Answer
Answer: b
Explanation: Emitter current IE=IC+IB =100+0.5=100.5mA
αdc=IC/IE=100/100.5=0.995.
4. In CB configuration, the value of α=0.98A. A voltage drop

of 4.9V is obtained across the resistor of 5KΩ when
connected in collector circuit. Find the base current.
a) 0.01mA
b) 0.07mA
c) 0.02mA
d) 0.05mA
View Answer
2 of 5 3/16/18, 9:41 AM
Answer: c
Explanation: Here, IC=4.9/5K=0.98mA
α = IC/IE .So,
IE=IC/α=0.98/0.98=1mA.
IB=IE-IC=1-0.98=0.02Ma.
5. The emitter current IE in a transistor is 3mA. If the

leakage current ICBO is 5µA and α=0.98, calculate the
collector and base current.
a) 3.64mA and 35µA
b) 2.945mA and 55µA
c) 3.64mA and 33µA
d) 5.89mA and 65µA
View Answer
Answer: b
Explanation: IC=αIE + ICBO
=0.98*3+0.005=2.945mA.
IE=IC+IB . So, IB=3-2.495=0.055mA=55µA.
6. Determine the value of emitter current and collector

current of a transistor having α=0.98 and collector to base
leakage current ICBO=4µA. The base current is 50µA.
a) 1.5mA
b) 3.7mA
c) 2.7mA
d) 4.5mA
View Answer
Answer: c
Explanation: Given, IB=50µA=0.05mA
ICBO=4µA=0.004Ma
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IC=α/(1- α)IB+1/(1- α)ICBO=2.45+0.2=2.65Ma

IE=IC+IB=2.65+0.05=2.7mA.
7. The negative sign in the formula of amplification factor

indicates_________
a) that IE flows into transistor while IC flows out it
b) that IC flows into transistor while IE flows out it
c) that IB flows into transistor while IC flows out it
d) that IC flows into transistor while IB flows out it
View Answer
Answer: a
Explanation: When no signal is applied, the ratio of collector
current to emitter current is called dc alpha, αdc of a
transistor. αdc=-IC/IE. It is the measure of the quality of a
transistor. Higher is the value of α, better is the transistor in
the sense that collector current approaches the emitter
current.
8. The relation between α and β is _________

a) β=α/(1-α)
b) α= β/(1+β)
c) β=α/(1+α)
d) α= β/(1- β)
View Answer
Answer: b
Explanation: β is an ac base amplification factor. α is called
as current amplification factor. The relation of IC and IB
change as IC= βIB+ (1+ β)ICBO.
9. A transistor has an IE of 0.9mA and amplification factor of

0.98. What will be the IC?
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a) 0.745mA
b) 0.564mA
c) 0.236mA
d) 0.882mA
View Answer
Answer: d
Explanation: Given, IE = 0.9mA, α=0.98
We know, α= IC/IE
So, IC=0.98*0.9=0.882mA.
10. The collector current is 2.945A and α=0.98. The

leakage current is 2µA. What is the emitter current and
base current?
a) 3mA and 55µA
b) 2.945mA and 55µA
c) 3.64mA and 33µA
d) 5.89mA and 65µA
View Answer
Answer: a
Explanation: (IC – ICBO)/α=IE
= (2.945-0.002)/0.98=3mA.
IE=IC+IB . So, IB=3-2.495=0.055mA=55µA.


and Answers.
5 of 5 3/16/18, 9:41 AM
Common Emitter Configuration Questions and ... about:reader?url=https://www.sanfoundry.com/...
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Common Emitter Configuration

by staff10
4-5 minutes

Emitter Configuration”.
1. The base current amplification factor β is given

by_________
a) IC/IB
b) IB/IC
c) IE/IB
d) IB/IE
View Answer
Answer: a
Explanation: The current amplification factor (β) is given by
IC//IB. When no signal is applied, then the ratio of collector
current to the base current is called current amplification
factor of a transistor.
2. In an NPN silicon transistor, α=0.995, IE=10mA and

leakage current ICBO=0.5µA. Determine ICEO.
a) 10µA
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b) 100µA
c) 90µA
d) 500µA
View Answer
Answer: b
Explanation: IC=α IE +ICBO
=0.995*10mA+0.5µA=9.9505mA.
IB=IE-IC=10-9.9505=0.0495mA. β=α/(1-α)=0.995
/(1-0.995)=199
ICEO=9.9505-199*0.0495=0.1mA==100µA.
3. A germanium transistor with α=0.98 gives a reverse

saturation current ICBO=10µA in a CB configuration. When
it is used in CE configuration with a base current of 0.22µA,
calculate the collector current.
a) 0.9867mA
b) 0.7654mA
c) 0.51078mA
d) 0.23456mA
View Answer
Answer: c
Explanation: Given, ICBO=10µA, α=0.98 and IB =0.22µA.
IC=α/ (1-α) IB+ 1/(1-α) ICBO
0.01078+0.5=0.51078mA.
4. In CE configuration, if the voltage drop across 5kΩ

resistor connected in the collector circuit is 5V. Find the
value of IB when β=50.
a) 0.01mA
b) 0.25mA
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c) 0.03mA
d) 0.02mA
View Answer
Answer: d
Explanation: IC=V across RL/RL=5V/5KΩ=1mA.
IB=IC/β=1/50=0.02mA.
5. A transistor is connected in CE configuration. Collector

supply voltage Vcc=10V, RL=800Ω, voltage drop across
RL=0.8V, α=0.96. What is base current?
a) 41.97µA
b) 56.78µA
c) 67.67µA
d) 78.54µA
View Answer
Answer: a
Explanation: Here, IC=0.8/800=1mA
β= α/ (1-α)=0.96/1-0.96=24.
Now, IB=IC/ β=1/24=41.67µA.
6. The collector supply voltage for a CE configured

transistor is 10V. The resistance RL=800Ω. The voltage
drop across RL is 0.8V. Find the value of collector emitter
voltage.
a) 3.7V
b) 9.2V
c) 6.5V
d) 9.8V
View Answer
Answer: b
3 of 5 3/16/18, 9:41 AM
Explanation: Here, IC=0.8/800=1mA.

We know, VCE=VCC-ICRL
=10-0.8=9.2V.
7. The relation between α and β is_________

a) β = α/ (1-α)
b) α = β/(1+β)
c) β = α/ (1+α)
d) α = β/(1- β)
View Answer
Answer: b
Explanation: β is an ac base amplification factor. α is called
as current amplification factor. The relation of IC and IB
change as IC= βIB+ (1+ β) ICBO.
8. In ICEO, wt does the subscript ‘CEO’ mean?

a) collector to base emitter open
b) emitter to base collector open
c) collector to emitter base open
d) emitter to collector base open
View Answer
Answer: c
Explanation: The subscript ‘CEO’ means that it is collector
to emitter base open. It is called as the leakage current. It
occurs in a reverse bias in PNP transistor. The total current
can be calculated by IC=βIB+IC.
9. When the signal is applied, the ratio of change of

collector current to the ratio of change of base current is
called_________
a) dc current gain
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b) base current amplification factor

c) emitter current amplification factor
d) ac current gain
View Answer
Answer: d
Explanation: The ac current gain is given by β=ΔIC/ΔIB.
When the signal is applied, the ratio of change of collector
current to the ratio of change of base current is called ac
current gain.
10. The range of β is _________

a) 20 to 500
b) 50 to 300
c) 30 to 400
d) 10 to 20
View Answer
Answer: a
Explanation: Almost in all the transistors, the base current is
less than 5% of the emitter current. Due to this fact, it is
generally greater than 20. Usually it ranges from 20 to 500.
Hence this configuration is frequently used when
appreciable current gain as well as voltage gain is required.


and Answers.
5 of 5 3/16/18, 9:41 AM
Common Collector Configuration Questions and... about:reader?url=https://www.sanfoundry.com/...
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Common Collector Configuration

by staff10
4-5 minutes

Collector Configuration”.
1. The current amplification factor ϒdc is given

by_________
a) IE/IB
b) IB/IE
c) IC/IE
d) IE/IC
View Answer
Answer: a
Explanation: When no signal is applied, then the ratio of
emitter current to base current is called as ϒdc of the
transistor. As the collector is common to both input and
output circuits, hence the name common collector
configuration.
2. The relation between α and β is given by _________

a) 1/(1-α)=1- β
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b) 1/(1+α)=1+ β
c) 1/(1-α)=1+ β
d) 1/(1+α)=1- β
View Answer
Answer: c
Explanation: The current amplification factor (β) is given by
IC//IB. When no signal is applied, then the ratio of collector
current to the base current is called current amplification
factor of a transistor. β is an ac base amplification factor. α
is called as current amplification factor. The relation of IC
and IB change as IC= βIB+ (1+ β) ICBO.
3. The CC configuration has an input resistance_________

a) 500kΩ
b) 750kΩ
c) 600kΩ
d) 400kΩ
View Answer
Answer: b
Explanation: It has a high input resistance and very low
output resistance so the voltage gain is always less one. It
is used for driving a low impedance load from a high
impedance source.
4. The application of a CC configured transistor

is_________
a) voltage multiplier
b) level shifter
c) rectification
d) impedance matching
2 of 5 3/16/18, 9:42 AM
View Answer
Answer: d
Explanation: The most important use of CC transistor is an
impedance matching device. It is seldom used for
amplification purposes. The current gain is same as that of
CE configured transistor.
5. What is the output resistance of CC transistor?

a) 25 Ω
b) 50 Ω
c) 100 Ω
d) 150 Ω
View Answer
Answer: a
Explanation: The CC transistor has a very low value of
output resistance of 25 Ω. The voltage gain is always less
one. It is used for driving a low impedance load from a high
impedance source.
6. Increase in collector emitter voltage from 5V to 8V

causes increase in collector current from 5mA to 5.3mA.
Determine the dynamic output resistance.
a) 20kΩ
b) 10kΩ
c) 50kΩ
d) 60kΩ
View Answer
Answer: b
Explanation: ro=ΔVCE/ΔIC
=3/0.3m=10kΩ.
3 of 5 3/16/18, 9:42 AM
7. A change in 300mV in base emitter voltage causes a

change of 100µA in the base current. Determine the
dynamic input resistance.
a) 20kΩ
b) 10kΩ
c) 30kΩ
d) 60kΩ
View Answer
Answer: c
Explanation: ro=ΔVBE/ΔIB
=300m/100µ=30kΩ.
8. The point on the DC load line which is represented by ‘Q’

is called _________
a) cut off point
b) cut in point
c) breakdown point
d) operating point
View Answer
Answer: d
Explanation: The point which represents the values of IC
and VCE that exist in a transistor circuit when no signal is
applied is called as operating point. This is also called as
working point or quiescent point.
9. When is the transistor said to be saturated?

a) when VCE is very low
b) when VCE is very high
c) when VBE is very low
d) when VBE is very high
4 of 5 3/16/18, 9:42 AM
View Answer
Answer: a
Explanation: When VCE is very low, the transistor said to be
saturated and it operates in saturated region of
characteristic. The change in base current IB does not
produce a corresponding change in the collector voltage IC.
10. The input resistance is given by _________

a) ΔVCE/ΔIB
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVBE/ΔIE
View Answer
Answer: b
Explanation: The ratio of change in base emitter voltage
(ΔVBE) to resulting change in base current (ΔIB) at constant
collector emitter voltage (VCE) is defined as input
resistance. This is denoted by ri.


and Answers.
5 of 5 3/16/18, 9:42 AM
CE Characteristics - Electronic Devices and Circ... about:reader?url=https://www.sanfoundry.com/...
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CE Characteristics - Electronic
and Answers
by staff10
4-5 minutes

Questions & Answers (MCQs) focuses on “The CE
Characteristics”.
1. The input characteristics of a CE transistor is_________
a)
b)
c)
1 of 6 3/16/18, 9:42 AM
d)
View Answer
Answer: b
Explanation: A graph of IB against VBE is drawn. The curve
so obtained is known as input characteristics. The collector
emitter voltage (VCE) is kept constant.
2. The input resistance is given by _________

a) ΔVCE/ΔIB
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVBE/ΔIE
View Answer
Answer: b
Explanation: The ratio of change in base emitter voltage
(ΔVBE) to resulting change in base current (ΔIB) at constant
collector emitter voltage (VCE) is defined as input
3. Which of the following depicts the output characteristics

of a CE transistor?
a)
2 of 6 3/16/18, 9:42 AM
b)
c)
d)
View Answer
Answer: d
Explanation: A graph of IC against VCE is drawn. The curve
so obtained is known as output characteristics. The base
current (IB) is kept constant.
4. The output resistance is given by _________

a) ΔVCE/ΔIB
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVCE/ΔIC
3 of 6 3/16/18, 9:42 AM
View Answer
Answer: d
Explanation: The ratio of change in collector emitter voltage
(ΔVCE) to resulting change in collector current (ΔIC) at
constant base current (IB) is defined as output resistance.
This is denoted by ro.
5. Which of the following cases damage the transistor?

a) when VCE is increased too far
b) when VCE is decreased too far
c) when VBE is increased too far
d) when VBE is decreased too far
View Answer
Answer: a
Explanation: When VCE is increased too far, collector base
junction completely breaks down and due to this avalanche
breakdown, collector current increases rapidly. This is not
shown in the characteristic. In this case, the transistor is
damaged.
6. When the collector junction is reverse biased and emitter

junction is forward biased, the operating region of the
transistor is called_________
a) inverted region
b) active region
c) cut off region
d) cut in region
View Answer
Answer: b
Explanation: In the active region, for small values of base
4 of 6 3/16/18, 9:42 AM
current, the effect of collector voltage over collector current

is small while for large base currents this effect increases.
The shape of characteristic here is same as that of CB
transistors.
7. The small amount of current which flows even when base

current IB=0 is called_________
a) IBEO
b) ICBO
c) ICEO
d) IC
View Answer
Answer: c
Explanation: In the cut off region, a small amount of
collector current flows even when base current IB is zero.
This is called ICEO. Since the main current is also zero, the
transistor is said to be cut off.
8. A change in 700mV in base emitter voltage causes a

change of 200µA in the base current. Determine the
dynamic input resistance.
a) 2kΩ
b) 10kΩ
c) 3kΩ
d) 3.5kΩ
View Answer
Answer: c
Explanation: ro=ΔVBE/ΔIB
=700m/200µ=3.5kΩ.
9. The change in collector emitter voltage from 6V to 9V
5 of 6 3/16/18, 9:42 AM
causes increase in collector current from 6mA to 6.3mA.

Determine the dynamic output resistance.
a) 20kΩ
b) 10kΩ
c) 50kΩ
d) 60kΩ
View Answer
Answer: b
Explanation: ro=ΔVCE/ΔIC
=3/0.3m=10kΩ.
10. Which of the following points locates the quiescent

point?
a) (IC, VCB)
b) (IE, VCE)
c) (IE, VCB)
d) (IC, VCE)
View Answer
Answer: a
Explanation: The quiescent point is best located between
the cut off and saturation point. IE= VEE/RE, VCB=VCC-ICRL.
It is denoted by ‘Q’.


and Answers.
6 of 6 3/16/18, 9:42 AM
CB Characteristics - Electronic Devices and Circ... about:reader?url=https://www.sanfoundry.com/...
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CB Characteristics - Electronic
and Answers
by staff10
4-5 minutes

Questions & Answers (MCQs) focuses on “The CB
Characteristics”.
1. The input resistance in a CB transistor is given by

_________
a) ΔVCE/ΔIB
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVEB/ΔIE
View Answer
Answer: d
Explanation: The ratio of change in emitter base voltage
(ΔVEB) to resulting change in emitter current (ΔIE) at
constant collector base voltage (VCB) is defined as input
2. The output resistance of CB transistor is given by

_________
1 of 7 3/16/18, 9:42 AM
a) ΔVCB/ΔIC
b) ΔVBE/ΔIB
c) ΔVBE/ΔIC
d) ΔVEB/ΔIE
View Answer
Answer: a
Explanation: The ratio of change in collector base voltage
(ΔVCB) to resulting change in collector current (ΔIC) at
constant emitter current (IE)¬ is defined as output
resistance. This is denoted by ro.
3. Which one of the following depicts the output

characteristics for a CB transistor?
a)
b)
2 of 7 3/16/18, 9:42 AM
c)
d)
View Answer
Answer: b
Explanation: A graph of IC against VCB is drawn. The curve
so obtained is known as output characteristics. The emitter
current (IE) is kept constant.
4. The input characteristics of a CE transistor is_________
a)
3 of 7 3/16/18, 9:42 AM
b)
c)
d)
View Answer
Answer: c
Explanation: A graph of IE against VEB is drawn. The curve
so obtained is known as input characteristics. The collector
base voltage (VBC) is kept constant.
4 of 7 3/16/18, 9:42 AM
5. A transistor is connected in CB configuration. The emitter

voltage is changed by 200mV, the emitter by 5mA. During
this transition the collector base voltage is kept constant.
What is the input dynamic resistance?
a) 30Ω
b) 60Ω
c) 40Ω
d) 50Ω
View Answer
Answer: c
Explanation: The ratio of change in emitter base voltage
(ΔVEB) to resulting change in emitter current (ΔIE) at
constant collector base voltage (VCB) is defined as input
We know, ΔVEB/ΔIE=ri
=200/5=40Ω.
6. When the collector junction is reverse biased and emitter

junction is forward biased, the operating region of the
transistor is called_________
a) inverted region
b) active region
c) cut off region
d) cut in region
View Answer
Answer: b
Explanation: In the active region, for small values of base
current, the effect of collector voltage over collector current
is small while for large base currents this effect increases.
5 of 7 3/16/18, 9:42 AM
The shape of characteristic here is same as that of CB

transistors.
7. Which of the following corresponds to the output circuit of

a CB transistor?
a) VBE
b) IB
c) VCB
d) VCE
View Answer
Answer: c
Explanation: Here, the quantity collector to base voltage
corresponds to the output circuit of a CB transistor. The
complete electrical behaviour of a transistor can be
described by stating the relation between these quantities.
8. The input of a CB transistor is given between_________

a) collector and emitter terminals
b) base ad collector terminals
c) ground and emitter terminals
d) emitter and base terminals
View Answer
Answer: d
Explanation: The name of the CB transistor says that it’s a
common based one. The input is given between the emitter
and base terminals and the output is taken between
collector and base terminals.
9. The current gain of the CB transistor is_________

a) less than or equal to unity
b) equal to unity
6 of 7 3/16/18, 9:42 AM
c) greater than unity

d) remains same
View Answer
Answer: a
Explanation: The input current flowing into the emitter
terminal must be higher than the base current and collector
current to operate the transistor. Therefore the output
collector current is less than the input emitter current.
10. The input characteristics of a CB transistor

resembles_________
a) Forward biased diode
b) Illuminated photo diode
c) LED
d) Zener diode
View Answer
Answer: b
Explanation: The input characteristics resemble the
illuminated photo diode and the output characteristics
resemble the forward biased diode. This transistor has low
input impedance and high output impedance.


and Answers.
7 of 7 3/16/18, 9:42 AM
DC Load Lines - Electronic Devices and Circuit... about:reader?url=https://www.sanfoundry.com/...
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DC Load Lines - Electronic

and Answers
by staff10
4-5 minutes

Questions & Answers (MCQs) focuses on “DC Load Lines”.
1. Which of the following depicts the DC load line?
a)
b)
1 of 12 3/16/18, 9:42 AM
c)
d)
View Answer
Answer: a
Explanation: In transistor circuit analysis, sometimes it is
required to know the collector currents for various collector
emitter voltages. The one way is to draw its load line. We
require the cut off and saturation points.
2. For the circuit shown, find the quiescent point.
a) (10V, 4mA)
b) (4V, 10mA)
c) (10V, 3mA)
d) (3mA, 10V)
2 of 12 3/16/18, 9:42 AM
View Answer
Answer: c
Explanation: We know, IE=VEE/RE=30/10kΩ=3mA
IC=α IE =IE =3mA
VCB=VCC-ICRL=25-15=10V. So, quiescent point is (10V,
3mA).
3. Which of the following depicts the load line for the circuit
shown below?
a)
b)
3 of 12 3/16/18, 9:42 AM
c)
d)
View Answer
Answer: d
IC=α IE =IE =3mA
3mA).
a) (6V, 1mA)
b) (4V, 10mA)
4 of 12 3/16/18, 9:42 AM
c) (10V, 3mA)
d) (3mA, 10V)
View Answer
Answer: c
Explanation: We know, VCE=12V
(IC)SAT =VCC/RL=12/6K=2mA. IB=10V/0.5M=20µA. IC=
βIB=1mA. I
VCE=VCC-ICRL=12-1*6=6V. So, quiescent point is (6V,
1mA).
5. Which of the following depicts the load line for the given
circuit?
a)
5 of 12 3/16/18, 9:42 AM
b)
c)
d)
View Answer
Answer: d
Explanation: We know, VCE=6V
(IC)SAT =VCC/RL=10/2K=5mA. IB=10V/0.5M=20µA. IC=
βIB=1mA. I
VCE=VCC-ICRL=10-1*2=8V. So, quiescent point is (8V,
1mA).
6. The DC equivalent circuit for an NPN common base

circuit is.
6 of 12 3/16/18, 9:42 AM
View Answer
7 of 12 3/16/18, 9:42 AM
Answer: a
Explanation: In the common base circuit, the emitter diode
acts like a forward biased ideal diode, while collector diode
acts as a current source due to transistor action. Thus an
ideal transistor may be regarded as a rectifier diode in the
emitter and a current source at collector.
7. The DC equivalent circuit for an NPN common emitter

circuit is.
8 of 12 3/16/18, 9:42 AM
View Answer
Answer: b
Explanation: In the common emitter circuit, the ideal
transistor may be regarded as a rectifier diode in the base
circuit and a current source in the collector circuit. In the
current source, the direction of arrow points in direction of
conventional current.
8. What is the other representation of the given PNP

transistor connected in common emitter configuration?
9 of 12 3/16/18, 9:42 AM
View Answer
Answer: d
Explanation: The emitter junction is forward biased with the
help of battery VEE by which, negative of the battery is
connected to the emitter while positive is connected to
base. RE is the emitter resistance. The collector junction is
reversed biased.
9. What is the DC characteristic used to prove that the

transistor is indeed biased in saturation mode?
10 of 12 3/16/18, 9:42 AM
a) IC = βIB
b) IC > βIB
c) IC >> βIB
d) IC < βIB
View Answer
Answer: d
Explanation: When in a transistor is driven into saturation,
we use VCE(SAT) as another linear parameter. In, addition
when a transistor is biased in saturation mode, we have IC
< βIB. This characteristic used to prove that the transistor is
indeed biased in saturation mode.
a) (10V, 4mA)
b) (4V, 10mA)
c) (10V, 3mA)
d) (3mA, 10V)
View Answer
Answer: c
IC=α IE =IE =2mA
2mA).
11 of 12 3/16/18, 9:42 AM


and Answers.
12 of 12 3/16/18, 9:42 AM
Transistor as a Switch Questions and Answers about:reader?url=https://www.sanfoundry.com/...
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Transistor as a Switch Questions

and Answers
by staff10
5-6 minutes

Questions & Answers (MCQs) focuses on “Transistor as a
Switch”.
1. In which region a transistor acts as an open switch?

a) cut off region
b) inverted region
c) active region
d) saturated region
View Answer
Answer: a
Explanation: In this mode, both the junctions are reverse
biased. The transistor has practically zero current because
the emitter does not emit charge carriers to the base. There
is negligibility current due to minority carriers. In this mode
the transistor acts as an open switch.
2. In which region a transistor acts as a closed switch?

a) cut off region
b) inverted region
1 of 7 3/16/18, 9:42 AM
c) active region
d) saturated region
View Answer
Answer: d
Explanation: In this mode, both the junctions are forward
biased. The negative terminal of the battery is connected to
the emitter. The collector current becomes independent of
base current. In this mode the transistor acts as a closed
switch.
3. Which of the following circuits act as a switch?
a)
b)
2 of 7 3/16/18, 9:42 AM
c)
d)
View Answer
Answer: b
Explanation: This is an inverter, in which the transistor in
the circuit is switched between cut off and saturation. The
load, for example, can be a motor or a light emitting diode
or any other electrical device.
4. The current which is helpful for LED to turn on

is_________
a) emitter current
b) base current
c) collector current
d) depends on bias
3 of 7 3/16/18, 9:42 AM
View Answer
Answer: c
Explanation: Depending on the type of load, a collector
current is induced that would turn on the motor or LED. The
transistor in the circuit is switched between cut off and
saturation. The load, for example, can be a motor or a light
emitting diode or any other electrical device.
5. Which of the following statements is true?

a) Solid state switches are applications for an AC output
b) LED’s can be driven by transistor logics
c) Only NPN transistor can be used as a switch
d) Transistor operates as a switch only in active region
View Answer
Answer: b
Explanation: Output devices like LED’s only require a few
milliamps at logic level DC voltages and can therefore be
driven directly by the output of a logic gate. However, high
power devices such as motors or lamps require more power
than that supplied by an ordinary logic gate so transistor
switches are used.
6. The base emitter voltage in a cut off region is_________

a) greater than 0.7V
b) equal to 0.7V
c) less than 0.7V
d) cannot be predicted
View Answer
Answer: c
Explanation: From the cut off characteristics, the base
4 of 7 3/16/18, 9:42 AM
emitter voltage (VBE) in a cut off region is less than 0.7V.

The cut off region can be considered as ‘off mode’. Here,
VBE > 0.7 and IC=0. For a PNP transistor, the emitter
potential must be negative with respect to the base.
7. In saturation region, the depletion layer_________

a) increases linearly with carrier concentration
b) decreases linearly with carrier concentration
c) increases by increasing the emitter current
d) decreases by decreasing the emitter voltage drop
View Answer
Answer: d
Explanation: Here, the transistor will be biased so that
maximum amount of base current is applied, resulting in
maximum collector current resulting in minimum emitter
voltage drop which results in depletion layer as small as
possible and maximum current flows through the transistor.
8. The base emitter voltage in a saturation region

is_________
b) equal to 0.7V
c) less than 0.7V
View Answer
Answer: d
Explanation: From the saturation mode characteristics, the
transistor acts as a single pole single throw solid state
switch. A zero collector current flows. With a positive signal
applied to the base of transistor it turns on like a closed
5 of 7 3/16/18, 9:42 AM
switch.
9. The switching of power with a PNP transistor is

called_________
a) sourcing current
b) sinking current
c) forward sourcing
d) reverse sinking
View Answer
Answer: a
Explanation: Sometimes DC current gain of a bipolar
transistor is too low to directly switch the load current or
voltage, so multiple switching transistors is used. The load
is connected to ground and the transistor switches the
power to it.
10. The switching of power with a NPN transistor is

called_________
a) sourcing current
b) sinking current
c) forward sourcing
d) reverse sinking
View Answer
Answer: b
is connected to supply and the transistor switches the
power to it.
6 of 7 3/16/18, 9:42 AM

and Answers.
7 of 7 3/16/18, 9:42 AM
Transistor Switching Times Questions and Answers about:reader?url=https://www.sanfoundry.com/...
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Transistor Switching Times

by staff10
5-7 minutes

Questions & Answers (MCQs) focuses on “Transistor
Switching Times”.
1. The collector current will not reach the steady state value
instantaneously because of_________
a) stray capacitances
b) resistances
c) input blocking capacitances
d) coupling capacitance
View Answer
Answer: a
Explanation: When a pulse is given, the collector current will
not reach the steady state value instantaneously because
of stray capacitances. The charging and discharging of
capacitance makes the current to reach a steady state
value after a given time constant.
2. For the BJT, β=∞, VBEon=0.7V VCEsat=0.7V. The switch

is initially closed. At t=0, it is opened. At which time the BJT
1 of 8 3/16/18, 9:43 AM
leaves the active region?
a) 20ms
b) 50ms
c) 60ms
d) 70ms
View Answer
Answer: b
Explanation: At t < 0, the BJT is OFF in cut off region. IB=0
as β=∞, so IC=IE. When t > 0, switch opens and BJT is ON.
The voltage across capacitor increases. From the input
loop, -5-VBE-I(4.3K)+10=0 and gives I=1mA.
IC1=1-0.5=0.5mA. VC1=0.7+4.3+10=-5V. IC1=C1dVC1/dt.
From this equation, we get t=50ms.
3. The technique used to quickly switch off a transistor is

by_________
a) reverse biasing its emitter to collector junction
b) reverse biasing its base to collector junction
c) reverse biasing its base to emitter junction
d) reverse biasing any junction
View Answer
Answer: c
2 of 8 3/16/18, 9:43 AM
Explanation: The technique used to quickly switch off a

transistor is by reverse biasing its base to collector junction.
It is demonstrated in a high voltage switching circuit. The
advantage of this circuit is that it is not necessary to have
high voltage control signal.
4. The disadvantage of using the method of reverse biasing

base emitter junction is_________
a) high voltage control signal
b) low voltage control signal
c) output swing
d) incomplete switching of output
View Answer
Answer: d
Explanation: This method is used to quickly switch off a
transistor is by reverse biasing its base to collector junction.
It is demonstrated in a high voltage switching circuit. The
disadvantage of using the method of reverse biasing base
emitter junction is that the output does not switch
completely to GND due to forward voltage drop of the
diode.
5. Which of the following circuits helps in the applications of

switching times?
3 of 8 3/16/18, 9:43 AM
a)
b)
4 of 8 3/16/18, 9:43 AM
c)
d)
View Answer
Answer: b
Explanation: This is an inverter, in which the transistor in
the circuit is switched between cut off and saturation. The
load, for example, can be a motor or a light emitting diode
or any other electrical device.
6. Which of the following helps in reducing the switching

time of a transistor?
5 of 8 3/16/18, 9:43 AM
a) a resistor connected from base to ground

b) a resistor connected from emitter to ground
c) a capacitor connected from base to ground
d) a capacitor connected from emitter to ground
View Answer
Answer: a
Explanation: Connecting a resistor connected from base of
a transistor to ground/negative voltage helps in reducing the
switching the switching time of the transistor. When
transistor saturate, there is stored charge in the base that
must be removed before it turns off.
7. The time taken for a transistor to turn from saturation to

cut off is _________
a) inversely proportional to charge carriers
b) directly proportional to charge carriers
c) charging time of the capacitor
d) discharging time of the capacitor
View Answer
Answer: b
Explanation: When sufficient charge carriers exist, the
transistor goes into saturation. When the switch is turned
off, in order to go into cut off, the charge carriers in the base
region need to leave. The longer it takes to leave, the
longer it takes for a transistor to turn from saturation to cut
off.
8. The switching of power with a PNP transistor is called

_________
a) sourcing current
6 of 8 3/16/18, 9:43 AM
b) sinking current
c) forward sourcing
d) reverse sinking
View Answer
Answer: a
is connected to ground and the transistor switches the
power to it.
9. The base emitter voltage in a cut off region is _________

b) equal to 0.7V
c) less than 0.7V
View Answer
Answer: c
Explanation: From the cut off characteristics, the base
emitter voltage (VBE) in a cut off region is less than 0.7V.
The cut off region can be considered as ‘off mode’. Here,
VBE < 0.7 and IC=0. For a PNP transistor, the emitter
potential must be negative with respect to the base.
10. Switching speed of P+ junction depends on _________

a) Mobility of minority carriers in P junction
b) Life time of minority carriers in P junction
c) Mobility of majority carriers in N junction
d) Life time of minority carriers in N junction
View Answer
7 of 8 3/16/18, 9:43 AM
Answer: d
Explanation: Switching leads to move holes in P region to N
region as minority carriers. Removal of this accumulation
determines switching speed. P+ regards to a diode in which
the p type is doped excessively.


and Answers.
8 of 8 3/16/18, 9:43 AM

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Junction Transistor - Electronic Devices and Cir... about:reader?url=https://www.sanfoundry.com/...

Junction Transistor - Electronic

This set of Electronic Devices and Circuits Multiple Choice

1. The advantages over the vacuum triode for a junction

2. What is the left hand section of a junction transistor

3. In an NPN transistor, the arrow is pointed

4. Which of the following is true in construction of a

c) the collector is made physically larger than the emitter

5. In the operation of an NPN transistor, the electrons cross

6. Which of the following are true for a PNP transistor?

7. In the saturated region, the transistor acts like

8. When does the transistor act like an open switch?

the transistor acts as open switch.

9. If the emitter-base junction is forward biased and the

10. The transfer of a signal in a transistor is_________

Sanfoundry Global Education & Learning Series –

Electronic Devices and Circuits.

To practice all areas of Electronic Devices and Circuits,

Electronic Devices and Circuits

This set of Electronic Devices and Circuits Questions and

1. The emitter current consist of_________

2. The total emitter current (IE) is given by_________

3. A common base transistor amplifier has an input

4. The amplification factor for a transistor is given

5. Why is the silicon mostly chosen when compared to

6. The change in output voltage across the load resistor for

ΔIE. We define by the symbol α that fraction of this current

7. A transistor has an IC of 100mA and IB of 0.5mA. What is

8. A germanium transistor used as an amplifier has a

9. In a PNP germanium transistor, the cut in voltage is

10. In a PNP transistor operating in active region, the main

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits for

This set of Electronic Devices and Circuits Multiple Choice

1. Which gas is used to fill the chamber in the grown

2. In a grown junction type construction, the method used

form a junction transistor is_________

3. Which of the following methods take impurity variation

4. Which of the following is true about grown junction type

a) N type impurity is added to P type impurity

5. What is the melting point of indium in alloy type

6. The non rectifying base contact is made from_________

7. What is the thickness of wafer in the alloy type

8. The larger dot of the indium is used as_________

of prepared indium. One dot of an indium is 3 times larger

9. The electrical properties of a transistor in alloy type

10. The grown junction type transistors is generally used

Sanfoundry Global Education & Learning Series –

To practice all areas of Electronic Devices and Circuits,

Common Base Configuration

This set of Electronic Devices and Circuits Multiple Choice

1. The AC current gain in a common base configuration

2. The value of αac for all practical purposes, for

3. A transistor has an IC of 100mA and IB of 0.5mA. What is

4. In CB configuration, the value of α=0.98A. A voltage drop

5. The emitter current IE in a transistor is 3mA. If the

6. Determine the value of emitter current and collector

IC=α/(1- α)IB+1/(1- α)ICBO=2.45+0.2=2.65Ma

7. The negative sign in the formula of amplification factor

8. The relation between α and β is _________

9. A transistor has an IE of 0.9mA and amplification factor of

10. The collector current is 2.945A and α=0.98. The

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