3.79.FN7.1 JL1L, J112, JL13 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. J111 S112 -J113 CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS DsG ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage Vos -35V Gate Current 7 IG 50mA Total Power Dissipation (TA=25°C) Peot 350mW Power Derating (to 125°C) 3..5mW/°C Operating Junction & Storage Temperature Tj, Tstg 55 to +125°C ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL | MIN TYP MAX JUNIT] TEST CONDITIONS Gate-Source Breakdown Voltage | BVgss | -35 v Gate Reverse Current (note 1) | Icss 1 | nA Drain Saturation Current 111] Ipss * | 2 mA Jig] 5 mA Jig} 2 mA Drain Cutoff Current (note 1) Ip(of f) nA Gate-Source Pinchoff Voltage | Vp SLY eo 108/¥, yu} -1 “5 |v 113 0.5 3/Vv Drain-Source On Resistance 4111] "pS(on) calla vsco.1v} 11g 50 | o Vps«0.1 113} 100 | 2 vps¢9.1V| Turn On Delay Time tu(on) 7 ns Rise Time ty ‘6 ns Turn Off Delay Time td(off) » ns | Foll Time tf 15 ns note 1: Approximately doubles for every 10°C increase in TA. * Pulse Test : Pulse Width = 0.3; MICRO ELECTRONICS LTI ins, Duty Cycle = 1k 28 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 4's 410 DD, KWON' Ton ». 0, Boxe9477 CABLE. ADDRESS “MICROTEOR' + Teusewowe:.” 3-43018t-6, “ROS8SES— HOSES FAX: 2-A10a4