Академический Документы
Профессиональный Документы
Культура Документы
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description Applications
This N-Channel IGBT is a MOS gated, logic level device • Automotive Ignition Coil Driver Circuits
which is intended to be used as an ignition coil driver in au- • Coil-On Plug Applications
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro- Features
tection for the logic level gate. Some specifications are • Logic Level Gate Drive
unique to this automotive application and are intended to • Internal Voltage Clamp
assure device survival in this harsh environment. • ESD Gate Protection
• Max TJ = 175oC
Formerly Developmental Type 49023
• SCIS Energy = 330mJ at TJ = 25oC
COLLECTOR COLLECTOR
(FLANGE) EMITTER
(FLANGE)
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, TC = 25°C - 1.3 2.0 V
VGE = 4.5V TC = 150°C - 1.4 2.3 V
VGE(TH) Gate to Emitter Threshold Voltage IC = 1mA, TC = 25°C 1.0 - 2.0 V
VCE = VGE TC = 150°C 0.5 - - V
Switching Characteristics
td(OFF)l + Current Turn-Off Time-Inductive Load IC = 6.5A, RG = 25Ω, - 12 16 µs
tf(OFF)l L = 550µHy, VCL = 320V,
VGE = 5V, TC = 25°C
SCIS Self Clamped Inductive Switching L = 2.3mHy, TC = 25°C 17 - - A
VGE = 5V, See TC = 150°C 12 - - A
Fig. 1 & 2
Thermal Characteristics
RθJC Thermal Resistance Junction to Case - - 0.57 °C/W
HGTP14N40F3VL / HGT1S14N40F3VLS
Typical Performance Curves (Continued)
80 80
ISCIS, INDUCTIVE SWITCHING CURRENT (A)
60 60
40 40
TJ = 25°C
TJ = 150°C TJ = 25°C
20 20
TJ = 150°C
SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
0 0
0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs Time Current vs Inductance
1.25 1.45
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.95 1.15
0.90 1.10
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Figure 3. Collector to Emitter On-State Voltage vs Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature Junction Temperature
40 40
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
20 20
10 10
TJ = - 40°C TJ = 25°C
0 0
0 1.0 2.0 3.0 4.0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 8.0V
PULSE DURATION = 250µs
VGE = 5.0V
25
VGE = 4.5V
30
VGE = 4.0V
20
VGE = 3.7V
20 15
TJ = 25°C
10
10 TJ = 175°C
5
TJ = 175°C TJ = -40°C
0 0
0 1.0 2.0 3.0 4.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V)
40 2.2
VCE = VGE
VGE = 4.5V
ICE = 1mA
ICE, DC COLLECTOR CURRENT (A)
2.0
VTH, THRESHOLD VOLTAGE (V)
30
1.8
20 1.6
1.4
10
1.2
0 1.0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
10000 14
ICE = 6.5A, VGE = 5V, RG = 1KΩ
ICES, LEAKAGE CURRENT (µA)
VECS = 24V
1000
toffL, SWITCHING TIME (µS)
12
100
VCES = 350V Inductive tOFF
10
10
VCES = 250V
8
1.0
6
0.1
25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
Figure 11. Leakage Current vs Junction Figure 12. Switching Time vs Junction
Temperature Temperature
HGTP14N40F3VL / HGT1S14N40F3VLS
Test Circuit and Waveforms
1500 8
FREQUENCY = 1 MHz IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
1000 CIES
VCE = 12V
750 4
500
CRES 2
VCE = 6V
250
COES
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30
380
ICER = 10mA
BVCER, BREAKDOWN VOLTAGE (V)
375
TJ = - 40°C
370
TJ = 25°C
365
TJ = 175°C
360
355
10 100 1000 5000 10000
RG, SERIES GATE RESISTANCE (kΩ)
100 0.5
0.2
0.1
10-1
0.05
t1
0.02
PD
0.01
10 -2 t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-5 10-4 10-3 10-2 10-1 100
RG
PULSE RG +
DUT G
GEN DUT
G VCE
5V -
E
Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit
VCE BVCES / R
tP
VCE
L
IAS
C VDD
VARY tP TO OBTAIN
+
REQUIRED PEAK IAS RG
G VDD
VGE DUT -
E
tP
0V IAS 0
0.01Ω
tAV
Figure 19. Unclamped Energy Test Circuit Figure 20. Unclamped Energy Waveforms