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MDF12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω
G
D
S
S
Thermal Characteristics
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11.5A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=6.3mH, IAS=11.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Vgs=5.5V
=6.0V
0.9
10 =6.5V
=7.0V
=8.0V
ID,Drain Current [A]
=10.0V 0.8
RDS(ON) [Ω ]
0.7 VGS=20V
1 VGS=10.0V
0.6
Notes
1. 250㎲ Pulse Test 0.5
2. TC=25℃
0.1 0.4
0.1 1 10 0 5 10 15 20
1.8 1.2
※ Notes : ※ Notes :
Drain-Source Breakdown Voltage
1. VGS = 10 V 1. VGS = 0 V
1.6 2. ID = 5 A 2. ID = 250㎂
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
1.4
VGS=10V
1.2 1.0
VGS=4.5V
1.0
0.9
0.8
0.6 0.8
-50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
20 100
* Notes ; ※ Notes :
1. VGS = 0 V
1. VDS=5V
2. ID = 250㎂
Reverse Drain Current [A]
15 125℃
25℃
10
IDR
ID [A]
10
1
25℃
5
125℃
0 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
8 250V
1200
400V
Capacitance [pF]
1000
6
Coss
800
4
600
※ Notes ;
1. VGS = 0 V
400 2. f = 1 MHz
2 Crss
200
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 0.1 1 10
2
10
Operation in This Area 14
is Limited by R DS(on)
10 µs
100 µs 12
10
1 1 ms
-ID, Drain Current [A]
10 ms 10
ID, Drain Current [A]
100 ms
DC 8
0
10
-1 4
10
Single Pulse
TJ=Max rated 2
TC=25℃
-2
10 0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature
0.2
Power (W)
0.1 6000
Zθ JC(t),
0.05
10
-1 4000
0.02
0.01 ※ Notes :
Duty Factor, D=t1/t2 2000
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=110℃/W
single pulse
10
-2 0
10
-5
10
-4
10
-3 -2
10 10
-1
10
0 1
10 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)
Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation
3 Leads, TO-220F
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