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# VALLIAMMAI ENGINEERING COLLEGE

## SRM Nagar, Kattankulathur – 603 203

DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING

QUESTION BANK

II SEMESTER
EC8252 – Electronic Devices
Regulation – 2017
Academic Year 2017 – 18

Prepared by
Mr. M. Selvaraj, Assistant Professor/ECE
Ms. S. Surabhi, Assistant Professor/ECE
Ms. R. Birundha, Assistant Professor/ECE
VALLIAMMAI ENGINEERING COLLEGE
SRM Nagar, Kattankulathur – 603 203.

## DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

QUESTION BANK
SUBJECT : EC8252 – Electronic Devices
YEAR / SEM : I /II

## UNIT I SEMICONDUCTOR DIODE

PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current
densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances,
Switching Characteristics, Breakdown in PN Junction Diodes.

PART – A
Q. No. Questions BT Level Competence
1. State mass action law. BTL 1 Remembering

## What is the principle operation of PN junction in reverse BTL 1 Remembering

2.
bias condition?
A silicon diode has a saturation current of 7.5µA at room BTL 6 Creating
3. temperature 300K. Calculate the saturation current at
400K.
4. Define diffusion current and drift current. BTL 1 Remembering

5. Point out why silicon is always preferred than germanium? BTL 4 Analyzing

## 9. What is diffusion current? BTL 1 Remembering

Identify the expression for depletion region width in PN BTL 4 Analyzing
10.
junction.
11. Distinguish between avalanche and Zener breakdown? BTL 2 Understanding
Compare the silicon and germanium diodes with respect to BTL 5 Evaluating
12.
cut in voltage and reverse saturation current.
Demonstrate the equation for drift current density and BTL 3 Applying
13.
diffusion current density due to electron and hole.
14. Formulate the diode current equation. BTL 6 Creating

15. List the types of recovery time and define it. BTL 1 Remembering

## 18. Explain the applications of PN diode. BTL 5 Evaluating

19. Examine the energy band structure of PN junction diode. BTL 3 Applying

## 20. What is breakdown voltage or Peak inverse voltage? BTL 1 Remembering

PART – B
Q. No. Questions BT Level Competence
Recall the quantitative theory of PN diode currents and BTL 1 Remembering
1.
obtain the diode current equation. (16)
Find the expression for PN junction diode forward and BTL 1 Remembering
2. reverse currents with suitable diagram and necessary
explanation.(16)
i) Show the position of Fermi level in N type and P type BTL 1 Remembering
3. semiconductors. (6)
ii)Write notes on classification of semiconductors.(10)
Examine the operation of open circuited PN Junction and BTL 4 Analyzing
4. derive the expression for built in potential barrier with the
help of energy band structure. (16)
Develop the built in barrier potential in a PN junction. BTL 3 Applying
Using the obtained expression calculate the Vo of silicon
5. 18
PN junction at 300k with doping densities Na=1*10 cm-3
15 10
and Nd=1*10 cm-3. Assume ni=1.5*10 cm-3. (16)
i)Explain in detail about how temperature affects the VI BTL 2 Understanding
characteristics of diode.(8)
6.
ii)Describe the deviation of VI characteristics of PN
junction diode from its ideal.(8)
Conclude the theory of PN junction diode and obtain BTL 5 Evaluating
7.
depletion width. (16)
Discuss about the switching characteristics of PN junction diode BTL 1 Remembering
8. with suitable diagrams. (16)
i) Illustrate the break down in PN junction diode. (10) BTL 2 Understanding
9.
ii)Explain the limiting values of PN junction diodes.(6)
Show the expression for transition capacitance and BTL 2 Understanding
10.
diffusion capacitance of a PN diode. (16)
Describe the construction of PN junction diode and BTL 3 Applying
11. explain the forward and reverse characteristics of PN
junction diode and obtain its VI characteristic curve. (16)
Examine the drift and diffusion current densities and BTL 4 Analyzing
12.
obtain the current density for P type and N type.(16)
The diode current is 0.6mA when the applied voltage is BTL 4 Analyzing
13. 400mV and 20mA when the applied voltage is 500mV.
Determine ƞ. Assume kT/q = 25mV. (16)
i)Estimate the voltage when the reverse current in a PN BTL 6 Creating
junction diode reach 90% of its saturation value at room
temperature.(8)
14.
ii)Formulate the dynamic forward and reverse resistance
of a PN junction diode when the applied voltage is 0.25
volt at T=300K given Io=2µA. (8)
UNIT II BIPOLAR JUNCTION TRANSISTORS

## NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of

CE, CB, CC - Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model,
Multi Emitter Transistor
PART A

## Q. No Questions BT Level Competence

1. What is a transistor? BTL 1 Remembering
2. Find the need for biasing? BTL 1 Remembering
3. List the transistor parameters. BTL 1 Remembering
4. Summarize the relationship between α and β BTL 1 Remembering
5. Identify the other name of early effect and explain the same BTL 6 Creating
6. Draw the diode equivalent model of a transistor. BTL 1 Remembering
7. Outline the basic structure of BJT BTL 2 Understanding
8. Give the relationship between currents in NPN transistor. BTL 2 Understanding
9. Analyze the bias condition of base emitter and collector base BTL 4 Analyzing
junction to operate a transistor in cut-off region.
10. Calculate the value of β if a transistor has α = 0.97.Also find α if BTL 4 Analyzing
β=200.
11. Examine Gummel number BTL 4 Analyzing
12. Assess h parameters BTL 5 Evaluating
13. When do you apply Ebers-Moll model. BTL 5 Evaluating
14. Draw Hybrid pi model for CE configuration. BTL 6 Creating
15. Mention the benefits of h parameters BTL 1 Remembering
16. What is high level injection effect BTL 2 Understanding
17. Infer about multi emitter transistor BTL 2 Understanding
18. Identify the advantages of multi emitter transistor BTL 3 Applying
19. Give an explanation on base spreading resistance BTL 3 Applying
20. Built the conversion formula of h parameter from CE to CB BTL 3 Applying
PART B
1. Explain the configurations and the principle of operation of BTL 1 Remembering
BJT. (16)
2. (i)Develop the input and output characteristics of a BTL 1 Remembering
transistor in CC configuration.(10)
(ii)Formulate the relationship among α , β , γ.(6)
3. With neat diagram explain the input and output BTL 1 Remembering
characteristics of a transistor in CE configuration. (16)
4. i) The reverse leakage current of a transistor when connected BTL 1 Remembering
in CB configuration is 0.2 µA and it is 18 µA when the same
transistor is connected in CE configuration calculate α, β.
ii) Describe early effect.(8)
i)5. i)Justify transistor as an amplifier(6) BTL 2 Understanding
ii) ii)Develop the comparison of CE,CC,CB configuration
(10)
6. Describe the input and output characteristics of a transistor in BTL 2 Understanding
CB configuration. (16)
7. (i)The current gain of a transistor in CE mode is 49. BTL 3 Applying
Calculate its CB current gain. Find the base current when
the emitter current is 3mA. (8)
(ii)Explain various types of break downs in transistors (8)
8. Describe hybrid parameters for all three configurations BTL 3 Applying
and relations between them. (16)
9. i)With relevant expressions and sketch, describe BTL 4 Analyzing
h-parameter model. (10)
ii)Distinguish between h and π model.(6)
10. Describe the Eber’s Moll model for a NPN transistor. (16) BTL 4 Analyzing
11. Express the derivation for f β and Draw the hybrid π BTL 4 Analyzing
model of BJT? (16)
12. Evaluate the Eber’s Moll model for a PNP transistor. (16) BTL 5 Evaluating
13. Formulate the expression of Gummel Poon-model with BTL 6 Creating
neat circuit diagram and obtain the Gummel number. (16)
14. i)Show How multi emitter transistor is working? Explain it BTL 2 Understanding
with neat diagram. (8)
ii) The h parameter for the transistor are hie=1.1kΩ, hfe=99,
hre=2.5* 10-4 and hoe=25 µA/V. Find the h parameter for
common base and common collector configurations.(8)

## UNIT III FIELD EFFECT TRANSISTORS

JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation,
D-MOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.

PART A

## Q.No Questions BT Domain

Level
1. Write down the Shockley’s equation BTL 1 Remembering
2. Differentiate between JFET and BJT BTL 1 Remembering
3. Define amplification factor in JFET BTL 1 Remembering
4. Recall about drain resistance. BTL 1 Remembering
5. Point out the advantages of MOSFET compared to JFET BTL 1 Remembering
6. Compare JFET and MOSFET BTL 1 Remembering
7. List the advantages and applications of JFET BTL 2 Understanding
8. What are the two modes of MOSFET? BTL 2 Understanding
9. Deduce the drain current equation of JFET. BTL 2 Understanding
10. Define Trans conductance gm. BTL 2 Understanding
11. Formulate the relationship between various FET BTL 3 Applying
parameters?
12. Justify how JFET act as VVR? BTL 3 Applying
13. Examine why Depletion MOSFET is commonly known as BTL 3 Applying
“Normally-ON” MOSFET?
14. Classify the three regions that are present in the drain BTL 4 Analyzing
source characteristics of JFET.
15. Differentiate between current voltage relationship of N BTL 4 Analyzing
channel and P channel MOSFET.
16. Analyze in which region JFET acts as a resistor and why? BTL 4 Analyzing
17. What is JFET and give its modes of operation? BTL 5 Evaluating
18. Assess on Pinch off voltage BTL 5 Evaluating
19. Formulate V-I characteristic curve of MOSFET BTL 6 Creating
20. Elaborate Channel length modulation. BTL 6 Creating
PART B
1. i)Explain the construction and operation and of a JFET. (8) BTL 1 Remembering
ii)Derive the FET characteristics parameters from the
above characteristics. (8)
2. Outline the classification of FET family and explain each BTL 1 Remembering
component in detail (16)
3. Explain the construction and operation of n-channel JFET BTL 1 Remembering
with neat diagrams (16)
4. Explain the construction and operation of p-channel JFET BTL 1 Remembering
with neat diagrams (16)
5. Derive an expression for drain current of FET in pinch off BTL 2 Understanding
region with necessary diagram.(16)
6. Draw a circuit for obtaining drain and transfer BTL 2 Understanding
characteristics of an n channel JFET.(16)
7. Obtain the drain and transfer characteristics of an p BTL 3 Applying
channel JFET.(16)
8. Explain the construction and principle of operation of BTL 3 Applying
Enhancement MOSFET with the help of suitable diagram
(16)
9. Explain the construction and principle of operation of BTL 4 Analyzing
Depletion MOSFET with the help of suitable diagram
(16)
10. i)Describe with suitable sketches the operation and BTL 4 Analyzing
characteristics of the n channel Enhancement type
MOSFET(10)
ii)Compare n-channel MOSFET & p-channel MOSFET
(6)
11. i) Explain the construction, operation and characteristics BTL 4 Analyzing
of n- Channel depletion type MOSFET.(10)
ii)Describe the effect of channel length modulation(6)
12. i) Illustrate and compare the operation of depletion BTL 5 Evaluating
MOSFET and enhancement MOSFET (8)
ii)Explain the concept of threshold voltage in a
MOSFET.(8)
13. i)Discuss the differences between BJT and FET (12) BTL 6 Creating
ii)Explain briefly the effect of temperature on
MOSFET(4)
14. i)Compare the difference between JFET & MOSFET (10) BTL 2 Understanding
ii) Describe some applications of JFET? (6)
UNIT IV SPECIAL SEMICONDUCTOR DEVICES
Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE
MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium
Arsenide device, LASER diode, LDR.

PART A

## Q.No Questions BT Domain

Level
1. What is Metal Semiconductor Junction? BTL 2 Understanding
2. Write short notes on MESFET. BTL 1 Remembering
3. Define zener diode. BTL 6 Creating
4. Expand LASER and LDR. BTL 1 Remembering
5. Discuss the zener breakdown voltage. BTL 6 Creating
6. List out the applications of zener diode and schottky diode BTL 2 Understanding
7. Describe the negative resistance of tunnel diode. BTL 1 Remembering
8. Explain Tunneling phenomenon. BTL 1 Remembering
9. What are the differences between a Tunnel diode and an
BTL 2 Understanding
ordinary PN junction diode?
10. Identify the symbol and structure of schottky diode. BTL 3 Applying
11. Draw the energy band diagram of metal and
BTL 4 Analyzing
semiconductor before and after conduction is made.
12. What is Gallium Arsenide Device (GaAs)? BTL 3 Applying
13. Sketch the V-I characteristics curve for Zener diode. BTL 1 Remembering
14. Develop the Tunnel Diode Oscillator circuit. BTL 2 Understanding
15. Give the equivalent circuit for tunnel diode. BTL 1 Remembering
16. Describe the working principle of varactor diode. BTL 3 Applying
17. State the applications of the tunnel diode. BTL 4 Analyzing
18. Conclude the applications of zener diode. BTL 5 Evaluating
19. Compare MOSFET and MESFET . BTL 4 Analyzing
20. Assess diode capacitance value from varactor tuning ratio. BTL 5 Evaluating
PART B
1. (i) Illustrative the V-I characteristic curve and explain the
operation of zener diode (10) BTL 1 Remembering
(ii) Compare Avalanche and Zener breakdown. (6)
2. Illustrate how a zener diode is used in Voltage regulation
(16) BTL 3 Applying
3. Describe the variable capacitance characteristics of a
Varactor diode and analyze its operation in typical BTL 1 Remembering
circuit(16)
4. Determine the current voltage relationship of a schottky
BTL 2 Understanding
Barrier diode and discuss its operation(16)
5. (i)Explain the FINFET circuit model with necessary
diagrams and parameters.(8) BTL 1 Remembering
(ii)Describe Dual Gate MOSFET circuit model with
necessary diagram and parameters.(8)
6. Discuss the operation of tunnel diode using energy band
BTL 6 Creating
diagram and the characteristics of tunnel diode (16)
7. (i)Analyze the construction details and working principle
of LASER diode. (8) BTL 3 Applying
(ii)Describe the concept of dual gate MOSFET. (8)
8. Write short notes on LDR and list out its applications(16) BTL 1 Remembering
9. Give the working principle of Gallium Arsenide Devices
BTL 2 Understanding
with neat diagram (16)
10. Explain the working of PINFET and CNTFET with its
BTL 5 Evaluating
characteristics. (16)
11. i) Interpret the forward biasing and reverse biasing of
metal-semiconductor junction along with energy band
diagrams. (8) BTL 4 Analyzing
ii) Show the structure and operating principle of MESFET.
(8)
12. Define the Metal n-type and Metal p-type semiconductor BTL 4 Analyzing
contact with suitable diagrams. (16)
13. i) Outline tunnel diode and varactor diode using energy
band diagrams (8)
ii) Outline the operation of zener diode and the BTL 2 Understanding
conventional p-n junction diode. (8)
14. Describe the concept of tunneling? Explain the VI
characteristics of a tunnel diode using energy band BTL 3 Applying
diagram. (16)

## UNIT V POWER DEVICES AND DISPLAY DEVICES

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo
transistor, Opto Coupler, Solar cell, CCD.

PART A

Q. No Questions BT Domain
Level
1. What is SCR? Mention its applications. BTL 1 Remembering
2. Why SCR cannot be used as a bidirectional switch? BTL 1 Remembering
3. Compare BJT and UJT. BTL 4 Analyzing
4. What is Diac? List out its applications. BTL 1 Remembering
5. Write note about Triac and mention its applications. BTL 1 Remembering
6. Draw the two transistor equivalent circuit of SCR. BTL 3 Applying
7. Identify a Diac or Triac by the schematic symbol. BTL 2 Understanding
8. List the applications of UJT. BTL 1 Remembering
9. Describe the working principle of an LED and its
BTL 2 Understanding
applications
10. Sketch the V-I characteristics of UJT. BTL 3 Applying
11. How does Triac differ from Diac? BTL 4 Analyzing
12. Show the V-I characteristics for Triac. BTL 3 Applying
13. “A solar cell is a PN junction device with no voltage
directly applied across the junction”. If it is so, how does a BTL 6 Creating
solar cell deliver power to load?
14. Compare Triac with SCR. BTL 4 Analyzing
15. Express the equation for standoff ratio. BTL 2 Understanding
16. Determine the characteristics of photo transistor. BTL 5 Evaluating
17. If positive voltage is applied to gate, plan what happens in
BTL 6 Creating
DMOS?
18. Discuss the types of opto couplers. BTL 2 Understanding
19. Assess the characteristics of the material used in LED. BTL 5 Evaluating
20. Define CCD and Solar cell. BTL 1 Remembering
PART B
1. Draw the basic structure of UJT and explain V-I
characteristics of UJT with the help of equivalent circuit. BTL 1 Remembering
(16)
2. i) Discuss the characteristics and working principle of
BTL 2 Understanding
SCR and list out its applications. (8)
ii) Explain the significance of opt couplers. (8)
3. Analyze the spectral output curves and radiation pattern of
BTL 4 Analyzing
LED. (16)
4. i) Outline the structure of Phototransistor and explain its
operation. (8) BTL 4 Analyzing
ii) Explain Power MOSFET & Power BJT in detail. (8)
5. Demonstrate the construction, working principle and BTL 3 Applying
characteristics of Diac and Triac. (16)
6. i) Design a two transistor model of SCR. (8)
ii) Format three phase CCD operation. (8) BTL 6 Creating

## 7. i) Give a brief note on CCD. (8)

BTL 1 Remembering
ii) Write short notes on the modes of operation of LCD(8)
8. What is the working principle of solar cell and opto
BTL 1 Remembering
couplers? (16)
9. Describe the structure and operation of Power BJT and BTL 2 Understanding
Power MOSFET.(16)
10. Determine the operation of UJT relaxation oscillator and BTL 5 Evaluating
R1 value from the conditions for turn-on and turn-off.(16)
11. i) Recall the operation of a DMOS and VMOS transistor BTL 1 Remembering
(8)
ii) Describe the operation of LED and CCD and list out its
application (8)
12. i) Explain the working principle of SCR with V-I BTL 2 Understanding
characteristics. (8)
ii) Summarize the operation of SCR and Triac. (8)
13. i) Illustrate the construction, symbol and characteristics of BTL 3 Applying
photovoltaic cell. (8)
ii) Interpret the working of phototransistor & optocoupler.
(8)
14. i) Analyze the concept of LED and LCD. (8) BTL 4 Analyzing
ii) Examine the working principle of LCD with neat
diagram. (8)