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Experiment 1:

SILICON CONTROLLED
RECTIFIER
ECE 421L: Industrial Electronics

Prepared by
Engr. John Carl Joel S. Marquez
Engr. Seigfred V. Prado, M.Sc. ELEG
Engr. Jehiel D. Santos
THYRISTORS
Industrial Electronics Laboratory

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Thyristors
• Thyristors are devices that are constructed with four
semiconductor layers.
• Thyristors include the following:

Silicon
Shockley
Controlled Diac
Diode
Rectifier (SCR)

Gate Turn-off Silicon


Triac Thyristor Controlled
(GTO) Switch (SCS)

Light Silicon Silicon


Activated SCR Unilateral Bilateral
(LASCR) Switch (SUS) Switch (SBS)

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Thyristors
• Thyristors can control large amount of power using a very
small input power.
• These devices act as open circuits capable of withstanding a
certain rated voltage until they are triggered.
• The common applications include lamp dimmers, motor
speed controls, ignition systems, and charging circuits.

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Silicon Controlled Rectifier
• An SCR is a 4-layer pnpn device with three terminals, namely,
anode, cathode, and gate.
• The basic construction and schematic symbol are shown.

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Silicon Controlled Rectifier
• The gate determines when the rectifier switches from the
open-circuit to the short-circuit state.
• This implies that it is not enough to simply forward-bias the
anode-to-cathode region of the device.

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Silicon Controlled Rectifier
• The SCR operation can be analyzed by its internal pnpn
structure as a two-transistor arrangement.

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Turning the SCR On
Initial State: 𝑰𝑮 = 𝟎
• When the gate current (𝑰𝑮 ) is zero,
the devices is in the off-state.
• In this state, the very high
resistance between the anode and
cathode can be approximated as an
open switch.

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Turning the SCR On
On-State: 𝑰𝑮 > 𝟎
• When a positive pulse current,
called a trigger, is applied to the
gate, both transistors turn on.
• The anode is made more positive
than the cathode.

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Turning the SCR On
On-State: 𝑰𝑮 > 𝟎
• 𝑰𝑩𝟐 turns on 𝑸𝟐 , providing a path
for 𝑰𝑩𝟏 into the 𝑸𝟐 collector, thus
turning on 𝑸𝟏 .
• Note that the collector current of
𝑸𝟏 provides additional base current
for 𝑸𝟐 .
• Thus, 𝑸𝟐 stays in conduction even
after the trigger pulse is removed
from the gate.

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Turning the SCR On
On-State: 𝑰𝑮 > 𝟎
• By this regenerative action, 𝑸𝟐
sustains the saturated condition of
𝑸𝟏 .
• Therefore, once the device is
triggered, it stays on and provides a
very low resistance between the
anode and the cathode.

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Turning the SCR On
On-State: 𝑽𝑨𝑲 ≥ 𝑽𝑩𝑶
• Another way of turning the SCR on
is illustrated as shown.
p
• Observe that both 𝑱𝟏 and 𝑱𝟑 are 𝑱𝟏 𝑽 ≥ 𝑽𝑩𝑶
forward biased, while 𝑱𝟐 is reversed n
𝑱𝟐
biased. p
𝑱𝟑
• In this case, the SCR is cut-off.
n
• If the applied voltage, 𝑽𝑨𝑲 is
increased such that the reverse
biased 𝑱𝟐 breaks down.

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Turning the SCR On
On-State: 𝑽𝑨𝑲 ≥ 𝑽𝑩𝑶
• The SCR conducts heavily and is said
to be in the on-state.
p
• The applied voltage at which SCR 𝑱𝟏 𝑽 ≥ 𝑽𝑩𝑶
conducts heavily is called forward- n
𝑱𝟐
breakover voltage, 𝑽𝑩𝑹 . p
𝑱𝟑
n

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Turning the SCR On
• There are two ways to turn on the SCR:
1. Keep the gate open and make the supply voltage equal to
the breakover voltage.
2. Operate SCR with supply less than the breakover voltage
and then supply a small voltage to the gate.

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Turning the SCR Off
• When the gate returns to 0V after the trigger pulse is
removed, the SCR cannot turn off.
• The anode current must drop below the holding current, 𝑰𝑯
in order to turn off the SCR.
• There are two basic methods to turn off an SCR:
1. Anode current interruption
2. Forced commutation

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Turning the SCR Off
Anode Current Interruption
• The anode current can be interrupted by either a momentary
series or parallel switching arrangement as shown.

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Turning the SCR Off
Forced Commutation
• The method requires momentarily forcing current through
the SCR in the direction opposite to the forward conduction
so that the net forward current is reduced below the holding
value.

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SCR Characteristic Curve
• The characteristic curve of an SCR is shown.

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SCR Characteristic Curve
• The characteristic curve of an SCR is shown for various values
of 𝑰𝑮 .
• It can be noticed that as the gate current increases the value
of 𝑽𝑩𝑹 required to turn on decreases.

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SCR Characteristics and Ratings
• Forward-breakover voltage, 𝑽𝑩𝑹 is the voltage above which
SCR enters the forward-conducting region.
• Holding Current, 𝑰𝑯 is the value of current below which the
SCR switches from the forward-conduction state to the
forward-blocking region.
• Gate trigger current, 𝑰𝑮𝑻 is the gate current necessary to
switch SCR from the forward-blocking region to the forward-
conducting region.
• The forward and reverse blocking regions are the regions
corresponding to the open-circuit condition for the controlled
rectifier that block the flow of charge from anode to cathode.

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EXPERIMENT
Industrial Electronics Laboratory

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Experimental Circuit

𝟐𝟐𝟎𝒌𝛀

𝑨
𝑽𝑫𝑪
𝟒. 𝟕𝒌𝛀
𝑮
𝟏𝒌𝛀 𝑲

𝟏𝒌𝛀

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References
1. Boylestad, R. and Nashelsky, L. (2013). Electronic Devices
and Circuit Theory, 11th ed. New Jersey: Prentice Hall.
2. Floyd, T. (2012). Electronic Devices, 9th ed. New Jersey:
Prentice Hall.
3. Maloney, T. (2003). Modern Industrial Electronics, 4th ed.
New Jersey: Pearson Education, Inc.

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