BC237/238/239

BC237/238/239

Switching and Amplifier Applications

• Low Noise: BC239

1 TO-92
NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VCES Collector-Emitter Voltage : BC237 50 V
: BC238/239 30 V
VCEO Collector-Emitter Voltage : BC237 45 V
: BC238/239 25 V
VEBO Emitter-Base Voltage : BC237 6 V
: BC238/239 5 V
IC Collector Current (DC) 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage
: BC237 IC=2mA, IB=0 45 V
: BC238/239 25 V
BVEBO Emitter Base Breakdown Voltage
: BC237 IE=1µA, IC=0 6 V
: BC238/239 5 V
ICES Collector Cut-off Current
: BC237 VCE=50V, VBE=0 0.2 15 nA
: BC238/239 VCE=30V, VBE=0 0.2 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 120 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.07 0.2 V
IC=100mA, IB=5mA 0.2 0.6 V
VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA 0.73 0.83 V
IC=100mA, IB=5mA 0.87 1.05 V
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 0.55 0.62 0.7 V
fT Current Gain Bandwidth Product VCE=3V, IC=0.5mA, f=100MHz 85 MHz
VCE=5V, IC=10mA, f=100MHz 150 250 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Base Capacitance VEB=0.5V, IC=0, f=1MHz 8 pF
NF Noise Figure VCE=5V, IC=0.2mA,
: BC237/238 f=1KHz RG=2KΩ 2 10 dB
: BC239 VCE=5V, IC=0.2mA 4 dB
: BC239 RG=2KΩ, f=30~15KHz 4 dB

hFE Classification
Classification A B C
hFE 120 ~ 220 180 ~ 460 380 ~ 800

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC237/238/239
Typical Characteristics

100 100

IB = 400µA VCE = 5V

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

80 IB = 350µA
IB = 300µA
10
IB = 250µA
60

IB = 200µA

40 IB = 150µA
1

IB = 100µA
20

IB = 50µA
0.1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 2 4 6 8 10 12 14 16 18 20

VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V IC = 10 IB
1000
hFE, DC CURRENT GAIN

1000 V BE(sat)

100

100
10 V CE(sat)

1 10
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100 1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT

VCE = 5V
f=1MHz
IE = 0
Cob[pF], CAPACITANCE

10 100

1 10

0.1 1
1 10 100 1000 0.1 1 10 100

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC237/238/239
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

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©2002 Fairchild Semiconductor Corporation Rev. I1

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