TH97/2478 TH09/2479 IATF 0113686

www.eicsemi.com SGS TH07/1033

D3SBA10 ~ D3SBA100 SILICON BRIDGE RECTIFIER

RBV4
0.150 (3.8)
PRV : 100 ~ 1000 Volts C3
0.996 (25.3)
0.134 (3.4)
0.189 (4.8)
0.972 (24.7) 0.173 (4.4)

0.134(3.4)
0.122(3.1)
Io : 4.0 Amperes

0.603(15.3)
0.579(14.7)
FEATURES :

0.383(9.7)
0.367(9.3)
* High current capability
* High surge current capability + ~ ~
* High reliability 0.075 (1.9)
0.060 (1.5)

0.130(3.7)
0.146(3.3)
* Low reverse current

0.709 (18)
0.669 (17)
* Low forward voltage drop
* Ideal for printed circuit board 0.043 (1.1)
0.035 (0.9)
* Very good heat dissipation
0.114 (2.9)
* Pb / RoHS Free 0.303 (7.7)
0.098 (2.5)
0.287 (7.3)
0.032 (0.8)
MECHANICAL DATA : 0.043 (1.1)

* Case : Reliable low cost construction

utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant Dimensions in inches and (millimeters)
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

RATING SYMBOL D3SBA10 D3SBA20 D3SBA40 D3SBA60 D3SBA80 D3SBA100 UNIT

Maximum Reverse Voltage VRM 100 200 400 600 800 1000 V
Maximum Average Forward Current 4 (With heatsink , Tc = 108°C)
IF(AV) A
(50Hz Sine wave, R-load) 2.3 (Without heatsink , Ta = 25°C)
Maximum Peak Forward Surge Current
IFSM 80 A
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I2 t 32 A2S
Maximum Forward Voltage per Diode at I F = 2.0 A. VF 1.05 V
Maximum DC Reverse Current, VR=VRM
IR 10 μA
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case RӨJC 5.5 (With heatsink) °C/W
Maximum Thermal Resistance, Junction to Ambient RӨJA 30 (Without heatsink) °C/W
Operating Junction Temperature Range TJ 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C

Page 1 of 2 Rev. 03 : June 2, 2009

 TH97/2478 TH09/2479 IATF 0113686
www.eicsemi.com SGS TH07/1033

RATING AND CHARACTERISTIC CURVES ( D3SBA10 ~ D3SBA100 )

FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT FORWARD SURGE CURRENT
6 120

Non-repetitive
AVERAGE FORWARD OUTPUT

5 Sine wave, R-load on heatsink 100 TJ = 25°C

PEAK FORWARD SURGE

4 80
CURRENT, (A)

CURRENT, (A)
3 60

2 40

1 20

0 0
80 90 100 110 120 130 140 150 1 2 4 6 10 20 40 60 10

CASE TEMPERATURE, ( °C) NUMBER OF CYCLES

FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION

PER DIODE
100 14

Sine wave
POWER DISSIPATION , (W)

12
FORWARD CURRENT, (A)

TJ = 150 °C
10
10

1.0
4
TL = 25 °C
2

0.1 0
0 1 2 3 4 5 6 7
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
AVERAGE RECTIFIED
FORWARD VOLTAGE, VOLTS CURRENT, (A)

Page 2 of 2 Rev. 03 : June 2, 2009