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® STPS30H100CW/CT

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS


A1
K
IF(AV) 2 x 15 A A2

VRRM 100 V
Tj (max) 175 °C
VF (max) 0.67 V

FEATURES AND BENEFITS


A2 A2
■ Negligible switching losses K
A1
K
A1
■ Low leakage current
■ Good trade off between leakage current and TO-220AB
forward voltage drop TO-247
STPS30H100CW STPS30H100CT
■ Low thermal resistance
■ Avalanche rated

DESCRIPTION
Dual center tap Schottky rectifier suited for
Switch Mode Power Supplies and high fre-
quency DC to DC converters.
Packaged in TO-247, this device is intended
for use in high frequency inverters.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol Parameter Value Unit


VRRM Repetitive peak reverse voltage 100 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward current Tc = 155°C Per diode 15 A
δ = 0.5 Per device 30
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 1 A
IRSM Non repetitive peak reverse current tp = 100 µs square 3 A
Tstg Storage temperature range - 65 to + 175 °C
Tj Maximum operating junction temperature * 175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot 1
* : < thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a )

January 2002 - Ed: 4E 1/5


STPS30H100CW/CT

THERMAL RESISTANCES

Symbol Parameter Value Unit


Rth (j-c) Junction to case Per diode 1.6 °C/W
Total 0.9
Rth (c) Coupling 0.1

When the diodes 1 and 2 are used simultaneously :


∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit


IR * Reverse leakage current Tj = 25°C VR = VRRM 5 µA
Tj = 125°C 2 6 mA
VF ** Forward voltage drop Tj = 25°C IF = 15 A 0.80 V
Tj = 125°C IF = 15 A 0.64 0.67
Tj = 25°C IF = 30 A 0.93
Tj = 125°C IF = 30 A 0.74 0.80

Pulse test : * tp = 5 ms, δ < 2%


** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :


P = 0.54 x IF(AV) + 0.0086 x IF2(RMS)

Typical junction capacitance, VR = 5V F = 1MHZ Tj = 25°C : 4nF

Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient
average forward current (per diode). temperature (δ=0.5, per diode).

PF(av)(W) IF(av)(A)
14 18
δ = 0.1 δ = 0.2 δ = 0.5
Rth(j-a)=Rth(j-c)
12 16
δ = 0.05
14
10
δ=1 12
8 10 Rth(j-a)=15°C/W

6 8
T
6 T
4
4
2 2
IF(av) (A) δ=tp/T tp δ=tp/T tp Tamb(°C)
0 0
0 2 4 6 8 10 12 14 16 18 20 0 25 50 75 100 125 150 175

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STPS30H100CW/CT

Fig. 3: Non repetitive surge peak forward current ver- Fig. 4: Relative variation of thermal impedance
sus overload duration (maximum values, per diode). junction to case versus pulse duration.

IM(A) Zth(j-c)/Rth(j-c)
240 1.0
220
200 0.8
180
160 δ = 0.5
140 Tc=25°C 0.6
120
Tc=75°C
100 0.4 δ = 0.2
80 T
δ = 0.1
60 IM Tc=150°C
40 0.2
t Single pulse
20 δ=0.5 t(s) tp(s) δ=tp/T tp
0 0.0
1E-3 1E-2 1E-1 1E+0 1E-4 1E-3 1E-2 1E-1 1E+0

Fig. 5: Reverse leakage current versus reverse Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode). voltage applied (typical values, per diode).

IR(mA) C(pF)
2E+0 1000
1E+0 Tj=125°C F=1MHz
Tj=25°C

1E-1
500
1E-2

1E-3
Tj=25°C 200
1E-4
VR(V) VR(V)
1E-5 100
0 10 20 30 40 50 60 70 80 90 100 1 2 5 10 20 50 100

Fig. 7: Forward voltage drop versus forward cur-


rent (maximum values, per diode).

IFM(A)
200
100

Tj=125°C

Tj=25°C
10

VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

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STPS30H100CW/CT

PACKAGE MECHANICAL DATA


TO-247

DIMENSIONS
REF. Millimeters Inches
V
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
V Dia. D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
A F1 3.00 0.118
H
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
L5
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
L
H 15.45 15.75 0.608 0.620
L2 L4
L 19.85 20.15 0.781 0.793
F2
L1 3.70 4.30 0.145 0.169
F1 L1
L2 18.50 0.728
F3
D L3 14.20 14.80 0.559 0.582
V2 L3
F4
L4 34.60 1.362
F(x3) L5 5.50 0.216
M E
G M 2.00 3.00 0.078 0.118
= =
V 5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143

■ Cooling method: C
■ Recommended torque value: 0.8 N.m.
■ Maximum torque value: 1 N.m.

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STPS30H100CW/CT

PACKAGE MECHANICAL DATA


TO-220AB

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
H2 A
Dia
D 2.40 2.72 0.094 0.107
C
E 0.49 0.70 0.019 0.027
L5
L7 F 0.61 0.88 0.024 0.034
L6
F1 1.14 1.70 0.044 0.066
L2
F2 1.14 1.70 0.044 0.066
F2 G 4.95 5.15 0.194 0.202
D
F1 L9 G1 2.40 2.70 0.094 0.106
L4 H2 10 10.40 0.393 0.409
F L2 16.4 typ. 0.645 typ.
G1
M L4 13 14 0.511 0.551
E
L5 2.65 2.95 0.104 0.116
G
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151

Ordering type Marking Package Weight Base qty Delivery mode

STPS30H100CW STPS30H100CW TO-247 4.36g 30 Tube


STPS30H100CT STPS30H100CT TO-220AB 2.20 g 50 Tube
■ Epoxy meets UL94,V0

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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