MOS FET 2SK3800

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO220S
Symbol Ratings Unit Ratings
Symbol Test Conditions Unit
VDSS 40 V min typ max 4.44±0.2
1.3±0.2

(1.4)
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V 40 V (5)

ID ±70 A IGSS VGS = ±15V ±10 µA

±140 µA

(0.45)
ID (pulse)*1 A IDSS VDS = 40V, VGS = 0V 100

10.5 –0.5
+0.3
9.1±0.3
2.6±0.2
PD 80 (Tc=25ºC) W VTH VDS = 10V, ID = 1mA 2.0 3.0 4.0 V +0.2
0.1 –0.1
EAS*2 400 mJ Re (yfs) VDS = 10V, ID = 35A 30 50 S 1.2±0.2

+0.3
3 –0.5
+0.2
Tch 150 ºC RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ 0.86 –0.1

(1.5)
Tstg –40 to +150 ºC Ciss VDS = 10V 5100 pF 0.4
±0.1
2.54±0.1 2.54±0.1
* 1: PW 100µs, duty cycle 1% Coss f = 1.0MHz 1200 pF
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Crss VGS = 0V 860 pF
RG = 50Ω

(1.3)
(5.4)
t d (on) 100 ns 10.2±0.3
ID = 35A
tr 100 ns
VDD = 20V, RG = 22Ω

1.4±0.2
t d (off) 300 ns
RL = 0.57Ω, VGS = 10V
tf 130 ns 1 2 3
Details of the back (S=2/1)
VSD ISD = 50A, VGS = 0V 0.9 1.2 V
ISD = 25A, di/dt = 50A/µs 110 ns (Unit: mm)
t rr
R th (ch-c) 1.56 ºC/W
R th (ch-a) 62.5 ºC/W

■ ID — VDS Characteristics (typ.) ■ ID — VGS Characteristics (typ.) ■ VDS — VGS Characteristics (typ.) ■ Re (yfs) — ID Characteristics (typ.)
(VDS = 10V) (Ta = 25ºC) (VDS = 10V)
70 70 1.0 500

60 60 Tc = –55°C
0.8
100 25°C
50 50
10V 150°C

Re (yfs) (S)
5.5V 0.6
VDS (V)

40 40
ID (A)

ID (A)

5.0V
30 30 0.4
VGS = 4.5V 10
Ta = 150°C ID = 70A
20 20 25°C
0.2 35A
–55°C
10 10

0 0 0 1
0 0.5 1.0 1.5 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 1 10 70
VDS (V) VGS (V) VGS (V) ID (A)

■ RDS (ON) — I D Characteristics (typ.) ■ RDS (ON) — TC Characteristics (typ.) ■ j-c — t Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
Ta = 25ºC ID = 35A
VGS = 10V VGS = 10V (ID = 35A)
7.0 12.0 10 30 15

6.0 10.0 VDS

RDS (ON) (mΩ)

RDS (ON) (mΩ)

5.0
j-c (ºC/W)

8.0 1 20 10
VGS (V)
VDS (V)

4.0 VGS
6.0 VDD = 8V
3.0 12V
14V
4.0 0.1 10 16V 5
2.0 24V

1.0 2.0

0 0 0.01 0 0
0 10 20 30 40 50 60 70 –60 –50 0 50 100 150 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 50 100 150
ID (A) Tc (ºC) t (s) Qg (nC)

■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC)
50000 70 500 90
VGS = 0V PT
=1
f = 1MHz 60 0µ 80
100 PT s
ED =1
Capacitance (pF)

IT 00 70
10000 50 M PT µs
LI PT =1 60
Ciss N) =1 m
(O s
S 0m
PD (W)
IDR (A)

40 RD
IC (A)

10 s 50

30 Ta = 150°C 40
1000 Coss 25°C
30
20 –55°C 1
Crss 20
10 10
100 0 0.1 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 0 20 40 60 80 100 120 140 160
VDS (V) VSD (V) VDS (V) Tc (ºC)

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