MOS FET 2SK3801

Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions TO-3P
Symbol Ratings Unit Ratings
Symbol Test Conditions Unit 15.6±0.4
VDSS 40 V min typ max 4.8±0.2

5.0±0.2
13.6
VGSS ±20 V V(BR) DSS ID = 100µA, VGS = 0V

2.0
40 V 2.0±0.1

1.8
9.6
ID ±70 A IGSS VGS = ±15V ±10 µA
ID (pulse)*1 ±140 A IDSS VDS = 40V, VGS = 0V 100 µA

19.9±0.3
PD 100 (Tc=25ºC) W VTH VDS = 10V, ID = 1mA 2.0 3.0 4.0 V 3.2±0.1

4.0
a
EAS*1 400 mJ Re (yfs) VDS = 10V, ID = 35A 30 50 S b
Tch 150 ºC RDS (ON) VGS = 10V, ID = 35A 5.0 6.0 mΩ
Tstg –40 to +150 ºC Ciss VDS = 10V 5100 pF
2

20.0 min
* 1: PW 100µs, duty cycle 1% Coss f = 1.0MHz 1200 pF

4.0 max
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped, Crss VGS = 0V 860 pF 3
+0.2
+0.2 0.65 –0.1
RG = 50Ω t d (on) 100 ns 1.05 –0.1
ID = 35A
tr 100 ns 1.4
VDD = 20V, RG = 22Ω 5.45±0.1 5.45±0.1
t d (off) 300 ns
RL = 0.57Ω, VGS = 10V 15.8±0.2
tf 130 ns 1. Gate a) Part No.
2. Drain b) Lot No.
VSD ISD = 50A, VGS = 0V 0.9 1.5 V 3. Source
(1) (2) (3) (Unit: mm)
t rr ISD = 25A, di/dt = 50A/µs 100 ns
R th (ch-c) 1.25 °C/W
R th (ch-a) 35.71 °C/W

■ ID — VDS Characteristics (typ.) ■ ID — VGS Characteristics (typ.) ■ VDS — VGS Characteristics (typ.) ■ Re (yfs) — ID Characteristics (typ.)
(VDS = 10V) (Ta = 25ºC) (VDS = 10V)
70 70 1.0 1000

60 60
0.8 Tc = –55°C
50 50 25°C
10V 100

Re (yfs) (S)
5.5V 0.6 150°C
VDS (V)
ID (A)

ID (A)

40 40
5.0V
30 30 0.4
VGS = 4.5V
Ta = 150°C ID = 70A 10
20 20 25°C
–55°C 0.2 35A
10 10

0 0 0 1
0 0.5 1.0 1.5 2.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 1 10 70
VDS (V) VGS (V) VGS (V) ID (A)

■ RDS (ON) — I D Characteristics (typ.) ■ RDS (ON) — TC Characteristics (typ.) ■ j-c — Pw Characteristics (Single pulse) ■ Dynamic I/O Characteristics (typ.)
Ta = 25ºC ID = 35A
VGS = 10V VGS = 10V (ID = 35A)
7.0 10.0 10 30 15

6.0 VDS
8.0
RDS (ON) (mΩ)

RDS (ON) (mΩ)

5.0
1 20 10
j-c (ºC/W)

VDS (V)

VGS (V)
6.0 VGS
4.0
VDD = 8V
3.0 12V
4.0 14V
0.1 10 16V 5
2.0 24V
2.0
1.0

0 0 0.01 0 0
0 10 20 30 40 50 60 70 –60 –50 0 50 100 150 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0 50 100 150
ID (A) Tc (ºC) Pw (s) Qg (nC)

■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.) ■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
(Ta = 25ºC) (Ta = 25ºC)
50000 70 500 120
VGS = 0V PT
=1
f = 1MHz 60 0µ
100 PT s 100
ED =1
Capacitance (pF)

10000 IT 00
50 LI
M PT µs
PT =1 80
Ciss N) =1 m
(O
S 0m s
PD (W)
IDR (A)

RD
IC (A)

40 s
10
60
30 Ta = 150°C
1000 Coss 25°C
40
20 –55°C 1
Crss
10 20

100 0 0.1 0
0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 0 20 40 60 80 100 120 140 160
VDS (V) VSD (V) VDS (V) Tc (ºC)

112