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Transistor
New Products
Application
Notebook PC
DVC
Portable MD/CD/HDD
Player
Mobile Phone
Suitable for Portable equipment
Features
Realizes low ON-state resistance with even compact packages.
Offers a line-up of compound products combining two elements with the downsizing of the
packages attained, thus contributing to the high-density mounting of the packages.
Offers a line-up of easy-to-use compound products with Schottky Barrier Diode for power
supply applications.
TSMT TUMT
2.9 2.0
SMT3 UMT3
2.9 2.0
TSMT6 TUMT6
Low ON-state resistance Provides power 6.25 times Low ON-state resistance Provides power 5 times
reduced to as high in a pacge reduced to as high in a pacge
1/10 of the conventional value the same in size. 1/20 of the conventional value the same in size.
1
Series
Drive Voltage:4V Note) Internal circuit:P.9
2
MOS FET
Series
Drive Voltage:2.5V Note) Internal circuit:P.9
4
MOS FET
SOP8
5
Other Packages
6
MOS FET
PSOP8.PSOP8S
Features 1
Realizes great power supply efficiency with our new technology (i.e., a 8% increase
compared to conventional modeles) Ideal for CPU cores
Incorporates a high-speed optimized switch on the high side and a low ON resistance on the
low side
+ Control
80 - Vout=1.3V
IC Low-side
Vin Iout=10~20A
8%UP! ~20V MOS FET
Conventional product
CPU
High Side:RES070N03 x 3
75 SBD
Low Side :RSS140N03 x 3
70
0 5 10 15 20
LOAD CURRENT(A)
Features 2
Single PSOP8 package replacing two SOP8 packages
The single PSOP8 package has excellent heat dissipation (with a PD 1.5 times as high as that
of SOP8 packages), that allows the replacement of conventional two SOP8 packages in
parallel connection
SOP8 x 2 PSOP8 x 1
RSS125N03/etc.
RQW250N03
+ 1/2
mounting area
RSS125N03/etc.
Features Application
Realizes low RDS(on) by optimized PDP, Power Supply
design pattern.
Built-in gate protection diode
Avalanche capability ratings
8
MOS FET
Internal Circuit
Note) About more detail information, please see the latest technical specifications.
Nch
Pch
Pch + SBD
Nch +Pch
Fig.16 Fig.17
9
Note) About more detail information, please see the latest technical specifications.
Nch Pch
10
Miniature Digital Transistors
Single Type
1000 1000
DTB type Low VCE(sat)
Low VCE(sat) digital transisitor
digital
VCE(sat)/V0(on)(mV)
DTA type transisitor
100
DTB type
hFE/GI
DTA type
100
10
90%
Down
IC/I B = 20/1 25˚C
1 10
1 10 100 1000 1 10 100 1000
Ic(mA) Ic(mA)
Resistance value:R1=4.7kΩ/R2=10kΩ Resistance value:R1=4.7kΩ/R2=10kΩ
11
Complex Type
EMT6
ON/OFF signal
Compact
Light
DTR1
DTR1 DTB713ZM -30 -200 140~ 1 10
Low VCE(sat) Digital Transistor
EMD30
DTR2 DTC114EM 50 50 30~ 10 10
MOS FET
EMF33
12
Low VCE(sat) Transistor Series
ROHM development has achieved a Low VCE(sat) Transisitor series in various small
surface mount packages. These Low VCE(sat) Transistors are suitable for digital
equipment.
Features VCE(sat)-IC
1
Low VCE(sat) Transistors IC/I B = 20 2SA1577 2SB1732
0.1
Low Energy Consumption.
VCE(sat)(V)
High Collector Current. aat t))
VCCEE((ssC ED
0.01
REDU0%
Application 8 AA)) 0mm
((aatt 11000
VCE(sat)-IC
For Portable Equipment:
1
(i.e. Mobile phone, MD, CD-ROM, 2SB1690
IC/I B = 20
DVD-ROM, Notebook PC, etc.) Pulsed
2SB1197K
Ta = 25˚C
0.1 QST2
VCE(sat)(V)
aat t))
0.01 VCCEE((ssC ED
REDU0%
8 0mmAA))
00
((aatt 110
0.001
0.001 0.01 0.1 1 10
IC(A)
Single Type
VCEO IC
(V) (A)
PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP NPN
2SA2030 2SC5663 2SA2018 2SC5585 12 0.5
2SB1689 2SD2652 25B1732 25D2702 2SB1709 2SD2674 12 1.5
25B1730 25D2700 US6T6 US6X5 2SB1690 2SD2653 QST6 QSX5 12 2
US6T4 US6X3 2SB1705 2SD2670 QST4 QSX3 12 3
2SB1707 2SD2672 12 4
QST2 QSX1 12 6
2SB1694 2SD2656 25B1733 25D2703 2SB1710 2SD2675 30 1
25B1731 25D2701 US6T7 US6X6 2SB1695 2SD2657 QST7 QSX6 30 1.5
US6T5 US6X4 2SB1706 2SD2671 QST5 QSX4 30 2
2SB1708 2SD2673 30 3
QST3 QSX2 30 5
13
Complex Type
EMT6 UMT5/UMT6 TUMT5/TUMT6 TSMT5/TSMT6
Type Circuit Combination VCEO(V) IC(A)
x2 2SB1709
US6T8 QST8 2SB1709 12 1.5
Tr.1
Tr.2
2SB1710
US6T9 QST9 2SB1710 30 1
1pin
PNP 12 0.5
Tr.2 EMZ8 UMZ8N 2SA2018
+ Tr.1 50 0.15
2SC4617
NPN
1pin
2SB1690
QSZ1 12 2
2SD2653
Tr.1 Tr.2
2SB1695
QSZ2 30 1.5
1pin 2SD2657
EMF4 UMF4N 2SA2018 12 0.5
DTC123E 50 0.1
PNP
EMF5 UMF5N 2SA2018 12 0.5
+ Tr.1
Tr.2
DTC144E 50 0.1
DTr 2SA2018 12 0.5
1pin EMF21 UMF21N DTC114E 50 0.1
PNP
+ EMF6 UMF6N 2SA2018 12 0.5
Tr.1 Tr.2
MOS 2SK3019 30 0.1
1pin
NPN
+ 2SC5585 12 0.5
Tr.2 EMF9 UMF9N
MOS
Tr.1 2SK3019 30 0.1
1pin
Tr.1
2SC5585 12 0.5
Di.1 UML6N RB521S-30 30 0.2
NPN 1pin
+
2SD2672 12 1.5
SBD US5L10 QSL10 RB461F 20 0.7
Tr.1
Di.1
2SD2673 30 1
US5L12 QSL12 RB461F 20 0.7
1pin
14
Endured Discharge Voltage/
High Speed Switching/Low Noise Transistor Series
Outline 10
S.O.A. (Safety operating area)
Strong
Introducing our new technology, we discharge
New voltage
realized both high power duability and
high speed switching in small surface
1
mount packages. 500µs
IC(A)
10µs
Conventional
0.1
Features
High electrical power duability
(wide S.O.A) 5 times better 0.01
1 10 100
High speed switching 2 times faster VCE(V)
High avalanche energy 4 times better
Avalanche energy
100 High
avalanche
90
energy
Applications 80
70
Defect rate(%)
40
30
20
10
0
0 1 2 3 4
Discharge current:Ic(A)
Switching Time
Tstg
10
Switching
IC/IB = 10/1 Speed x 2
Conventional
1
Sw(µS)
0.1
New
0.01
0.01 0.1 1 10
IC(A)
15
Series Line-up
Current Voltage [V]
Package
(A) 30 60 90
UMT3 2SA2047/2SC5729 2SA2088/2SC5876
TUMT6 2SA2133/2SC5983
1
TSMT3 2SA2048/2SC5730 2SA2092/2SC5865 2SC5734/2SC5917
Surface mount devices
MPT3 2SA2071/2SC5824
3
CPT3 2SA2072/2SC5825
*
TSMT3 2SA2134/2SC5984
MPT3 2SA2157/2SC6028
5
*VCEO=45V
Current Voltage [V]
Package
(A) 30 60 90
2SA2073/2SC5826
3
2SA2160/2SC6007
TO220FN
10 2SA2149/2SC6005
16
Endured Discharge Voltage/
High Speed Switching Transistor Series
Characteristics
Surface mount devices
Part No. BVCEO IC ICP
hFE
SW time [ns]
Package [V] [A] [A] tstg
PNP NPN RANK ton tf
17
Part No. BVCEO IC ICP
hFE
SW time [ns]
Package [V] [A] [A]
PNP NPN RANK ton tstg tf
Through-hole devices
Part No. BVCEO IC ICP SW time [ns]
Package [V] [A] [A]
hFE
tf
PNP NPN RANK ton tstg
Note) About more detail information, please see the latest technical specifications.
18
Muting Transistors
hFE Ron
10000 100
Conventional product
DTC614T
10
(DTC314T)
Ron(Ω)
hFE
1000
Conventional product
(DTC314T) 1
DTC614T
100 0.1
0.1 1 10 100 1000 0.1 1 10 100
Part No. R1/R2(kΩ) Internal circut UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) Ron(Ω)
12 20 600
Part No. R1/R2(kΩ) Internal circut Elements SMT6 BVEBO(V) BVCEO(V) IC(mA) Ron(Ω)
12 20 600
19
Features 12V
Applications
0V or -12V
High-ß • High-BVEBO
Single type
EMT3 UMT3 SMT3 SPT BVEBO(V) BVCEO(V) IC(mA) hFE Ron(Ω)
Complex type
EMT6 SMT6 Circuit Elements BVEBO(V) BVCEO(V) IC(mA) hFE Ron(Ω)
20
External Dimensions (Unit:mm)
VMT3 0.4
0.2Min.
1.2
SST3 0.95
0.45
0.2 0.8 0.2 <SOT-23>
(3)
0.32
0.4 0.4
2.4
1.3
1.2
0.8
(2)
(3)
(1)
(2) (1)
0.22
(1)Base(IN)(Gate) (1)Emitter(GND)(Source) 0.15 0.95 0.95
0.5
(2)Emitter(GND)(Source) (2)Base(IN)(Gate) 1.9 Each lead
0.13
2.9 has same
(3)Collector(OUT)(Drain) (3)Collector(OUT)(Drain) dimensions
0.5 0.5
1.0
1.6
<SOT-416> (2)
0.5 0.5
(3) (4) (3)
0.5 0.5
0.22
1.0
1.6
0.3
(4) (3)
0.22
1.0
1.6
(5) (2)
(2)
0.2
0.13
0.15
0.13
(1)Emitter(GND)(Source)
0.5
0.55
0.7
0.5
(2)Base(IN)(Gate) Each lead has same Each lead has same
0.1Min.
(3)Collector(OUT)(Drain) dimensions dimensions
(3)
(4)
0.65
0.65 0.65
0.65 0.65
(SC-70) (SC-88A) (SC-88)
(3 )
(4 )
2.0
1.3
1.3
(2)
2.0
0.2
(2)
<SOT-323> <SOT-353> <SOT-363>
(3)
2.0
1.3
0.3
0.2
(2 )
(5 )
(6)
(1)
1.25
(6 )
0.65
(1 )
1.25
2.1 1.25
1pin mark 1pin mark
2.1
0.2
2.1
0.15
0.15
0.15
0.9
0.7
0.9
(1)Emitter(GND)(Source)
0.9
0.7
0.7
(2)Base(IN)(Gate) 0.1Min.
0.1Min. Each lead has same Each lead has same 0.1Min. Each lead has same
(3)Collector(OUT)(Drain) dimensions dimensions dimensions
0.3
0.65 0.65
0.65 0.65
0.65 0.65
Surface mount devices
2.0
2.0
1.3
1.3
1.3
2.0
(1)
0.85Max.
0.85Max.
0.17
0.77
0.77
0.77
0.17
0.17
(1)Base(Gate)
0~0.1
0~0.1
0~0.1
(2)Emitter(Source) 0.15Max. 0.15Max. 0.15Max.
(3)Collector(Drain)
(1)
0.95
0.95 0.95
(6 )
(3 )
(2 )
(1 )
0.3
0.3
2.9
<SOT-346> <SOT-457>
1.9
1.9
2.9
2.9
1.9
0.95
0.95
(2)
(4 )
(2 )
(5 )
0.4
(3)
(1 )
(5 )
(4 )
(3 )
1.6 1.6 1.6 1pin mark
2.8 2.8
2.8
0.15
0.15
0.15
(1)Emitter(GND)(Source)
1.1
1.1
1.1
0.8
0.8
0.8
(2)Base(IN)(Gate)
0.3Min. Each lead has same 0.3Min. Each lead has same 0.3Min. Each lead has same
(3)Collector(OUT)(Drain) dimensions dimensions dimensions
2.8
TSMT3 2.8 TSMT5 2.8 TSMT6 1.6
1.6 1.6
0.95 0.95
(4)
(3)
0.95 0.95
(2)
(2)
0.95 0.95
(4)
(3)
(2)
0.4
0.4
1.9
2.9
2.9
0.4
1.9
1.9
2.9
(5)
(1)
(3)
(5)
(1)
(6)
(1)
1pin mark
1.0MAX
1.0MAX
1.0MAX
0.16
0.16
0.85
0.16
0.85
(1)Base(Gate)
0.85
0.7
0.7
0.7
(2)Emitter(Source)
0~0.1
0~0.1
0~0.1
Each lead has same Each lead has same Each lead has same
(3)Collector(Drain) 0.3~0.6 dimensions 0.3~0.6 dimensions 0.3~0.6 dimensions
SOP8 6.0
PSOP8 6.0 PSOP8S
3.9 6.0
0.5 5.0 0.5
0.5 5.0 0.5
(5 )
(4 )
(5) (4)
3.91
0.4
(5) (4)
5.0
(6) (3)
5.0
(6) (3)
5.0
1.27
1.27
0.4
(7) (2)
0.4
(7) (2)
(1 )
(8 )
1pin mark
0.2
0.9
1.1
0.22
0~0.1
0~0.1
0.4Min.
dimensions
1.5 5.5 1.5
MPT3 CPT3
2.3
0.65
2.54
4.0 D2PAK
(SC-62) 0.5 2.5 1.0 (SC-63)
(3)
0.9
<SOT-89> <SOT-428>
0.4
10.0
5.08
6.5
5.1
(2)
(3)
1.5
2.3
1.24
0.5
0.8
3.0
4.5
1.6
(1)
9.0
0.9
(2)
1.5
0.75
15.1
9.5
(1) 1.5 2.5
0.4
1.3
0.8Min.
(1)Base(Gate) (1)Base(Gate)
1.5
1.0
(2)Collector(Drain) (2)Collector(Drain)
0.4
2.7
0~0.3
0.5
2.3
0.5
0.4
(3)Emitter(Source) (3)Emitter(Source)
Notes: 1) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. 2) For dimensions refer to the data sheet.
21
SPT ATV
(SC-72)
4.0 2.0
6.8 2.5
3.0
3Min.
4.4
0.9
(15Min.)
1.0
0.45 0.65Max.
14.5
0.5
(1) (2) (3)
2.5 0.5 0.45
2.54 2.54
5.0 1.05 0.45
(1)(2)(3)
(1)Emitter (1)Emitter
(2)Collector (2)Collector
(3)Base (3)Base
TO-126FP HRT
8.0 4.5
7.8 3.2
Surface 3.3
Back 3.19
12.0
10.8
6.9
9.2
3.5
1.2
1.6 C0.7
1.0
1.1
0.95
1.3
16.0Min.
1.75
0.5
16.0
Through-hole devices
0.8 1.3
0.8
0.55
1.8
3.1
15.0
17.0
12.0
12.0
8.0
8.0
1.2
5.0
1.3
5.0
1.3
13.5Min.
14.0
0.8
0.8
8.0
1.2
2.5
1.3
14.0
0.8
Notes: 1) Characters in ( ) under package designation denotes JEITA No. Characters in < > under package designation denotes JEDEC No. 2) For dimensions refer to the data sheet.
22
Catalog No.47P4869E 10. 2004 ROHM © TSU