Exercise Package 4:

Bipolar Junction Transistors (BJT):

1. Consider a Silicon NPN BJT:

a. How many PN junctions in the BJT?
b. Which layer of material is the thinnest and what type? Sketch the NPN structure to
illustrate it.
c. Which layer of a NPN BJT is called Base? Draw the symbol of NPN BJT to illustrate it.
d. The reverse saturation current between collector and base, ICBO is typically measured
with emitter open. Considering this BJT is operated at 25oC, calculate the ICBO use the
𝛾𝛾 𝐸𝐸𝑔𝑔
model 𝐼𝐼𝑆𝑆 = 𝑇𝑇 (3+2) 𝑒𝑒 (−𝑘𝑘𝑇𝑇 ) with γ=1. Explain why can you use this model to estimate ICBO?
e. The collector current caused by the majority carriers IC=IC_majority=αIE where IE is the
emitter current and α=0.99. Based on KCL principle, find IB, as IC=4mA.
f. Considering the current caused by the minority carrier in PN junction of CB which is
reverse biased in applications, the collector current will have two parts
IC=IC_majority+ ICBO= αIE+ ICBO.
By substituting IE= IC+IB, it yields
𝛼𝛼 𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶
𝐼𝐼𝐶𝐶 = 𝐼𝐼𝐵𝐵 +
1 − 𝛼𝛼 1 − 𝛼𝛼
𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶
where 𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶 = = (𝛽𝛽 + 1)𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶 is the leakage current flowing to emitter from
1−𝛼𝛼
collector caused by ICBO. Use the estimated ICBO current found in 1d. and α=0.99, to
𝛼𝛼
calculate the estimation of leakage current ICEO which is amplified by 𝛽𝛽 = 1−𝛼𝛼 (typically
100~200), from the highly temperature sensitive leakage current ICBO. (Note: ICBO is called
“Collector Cutoff Current” in the specification sheet of 2N3904 with notation ICEX which
is <50nA.)
𝑉𝑉𝐵𝐵𝐵𝐵
g. Considering the BJT is operated at 25 oC, calculate 𝐼𝐼𝐵𝐵 = 𝐼𝐼𝐶𝐶𝐶𝐶𝐶𝐶 �𝑒𝑒 𝑛𝑛𝑉𝑉𝑇𝑇 − 1� where ICBO is

the leakage current calculated in part 1d., n=2, and VBE=0.65V. (Note: Due to the
symmetry of PN junction in BJT, ICBO and IEBO are equal. In the 1N3904 specification sheet,
it is IBL which is called “Base Cutoff Current” and <50nA.)
h. Following the results from 1d. 1f. and 1g., calculate IC=βIB+ICEO. What is the percentage
of leakage current ICEO in the current IC?
2. Use the collector characteristics of a BJT at 25oC shown below to answer the questions:
a. What is the power rating of the BJT?
b. If it de-rates at 5mW per degree over 25oC, what is the power rate of the BJT at 55 oC?
c. Estimate the βac and βdc at operation point “B”, “C”, and (VCE=6V, IC=20mA) respectively.
d. Find the maximum limit of IC for VCE=10V at 25oC and 55 oC respectively.
e. Find the power dissipated by the BJT and operation point “B”, “C”, and “D” respectively.
f. As VCE<0.5V (estimated from characteristics), the BJT is in the saturation region (also
known as ohmic region), can you find the estimated resistance value RCE for this BJT?
 (Tip: print out the collector characteristic and use a ruler to help you get a good
estimation.)

3. Answer the following questions base on the specification sheet of 2N3904 (on pilot):
a. The condition to measure ICBO (also known as ICEX) is “open emitter” or IB=0. Explain why
the condition VCE=30V and VBE=−3V is the equivalent to the condition IB=0.
b. What is the maximum limit of ICBO for 2N3904 at what temperature?
c. The power rating of 2N3904 is 625mW at 25oC. What is its power rating at temperature
of 40 oC?
d. Find the maximum limit of collector-emitter saturation voltage, VCE_sat?
e. Find βdc for 2N3904 at IC=10mA.
f. Find typical βac (hfe in the specification sheet) for at IC=5mA, VCE=10V, and 25oC (Figure
11).
g. Estimate the βac at 25oC and 125oC (Figure 15, βac has the similar temperature
characteristics as the βdc. It is in the same test conditions of f.).
h. What is the operation range of VCE? (VCE_sat to VCE_max)
 i. What is the operation range of IC? (ICEO to IC_max)
4. Using the following collector (output) and base characteristics to answer the questions:

a. Find the values of VBE, VCE and power dissipation of the transistor operates at IB=20µA
and Ic=2.5mA.
b. Find the values of VBE, VCE and power dissipation of the transistor operates at IB=30µA
and Ic=3.6mA.
c. Find the values of VBE, VCE and power dissipation of the transistor operates at IB=70µA
and Ic=6mA.
d. Find the values of Ic and βDC as the transistor is biased at VBE=0.75 (V) and VCE=5 (V).
e. Find the values of Ic and βDC as the transistor is biased at VBE=0.8 (V) and VCE=10 (V).
f. Estimate the values of βAC and βDC as the transistor is biased at Ic=2.5mA and VCE=5 (V).
g. Estimate the βAC and βDC as the transistor is biased at Ic=4.5mA and VCE=10 (V).

Some answer keys:

1d. Is=118pA
1f. ICEO=12nA
1g. IB=37µA
1h. IC=3.6mA where ICEO is only 0.00032%
2a. It is estimated about 165 to 175mW as 10V*17.5mA or 12.5V*13.5 mA (red lines) etc.
2b. 30oC will cause 150mW in power derate, it is only 15-25mW rating at 55oC
2c. At “B,” βac= (10.5mA-7.5mA)/10µA=300 and βdc=10.5mA/30µA=350 (blue lines)
At (VCE=6V, IC=20mA), βac= (20mA-17mA)/10µA=300 and βdc=20mA/60µA=333 (blue lines)
2d. Due to the power rating, the maximum limit of IC=17.5mA at 25oC and only 2.5mA at 55oC.
2e. At “B,” Pdiss=VCE*IC=8V*10.5mA=84mW. Similarly, at “C” is 2.5V*4mA=10mW and
at “D” is 17V*8mA=136mW (green line)
2f. Assume VCE_Sat=0.3V and the corresponding current on the Collector Characteristics is about 17mA.
The resistor value is 0.3V/17mA=17.6Ω.

3a. Reversed bias of VBE=−3V establishes a thicker depletion region at the base-emitter PN junction
which effectively prevents the ICEO (induced by ICBO) diffuse through to the emitter. Therefore, only
current measured at the collector is the current ICBO.
3b. listed as ICEX (collector cutoff current, also IBL base cutoff current in the same measurement
conditions) <50nA
3c. 550mW
3d. between 100 to 300.
3e. 150; 3g. βac=150 at 25oC and βac=150*1.5=235 at 125oC; 3h. 0.2 or 0.3V to 40V; 3i. upto 200mA.
4a. From collector characteristics: VCE≈14V and from the base characteristics VBE≈0.7V. Power
dissipation=ICVCE=2.5mA×14V=35mW
4b. VCE≈12.5V, VBE≈0.75V, and Pdiss=45mW
4c. VCE≈5V, VBE≈0.81V, and Pdiss=30mW
4d. IB≈30µA and Ic≈3.2mA, βdc=107
4e. IB≈50µA and Ic≈5mA, βdc=100
4f. IB≈22µA, βdc=2.5mA/22µA=114, βac=((3.1−2.2)mA/(30-20)µA=90
4g. IB≈44µA, βdc=4.5mA/44µA=102, βac=((5−4.2)mA/(50-40)µA=80