Application Note AN-1215

Gen2 SIP1A IRAM

By
Jonah Chen, Pengwei Sun and Anna Grishina

Table of Contents
1. Introduction ························································································ 2
1.1 Introductions ······················································································ 2
1.2 IRAM Design Concept and Technology ················································· 2
2 IRAM Gen2 SIP1A Product Outline ······················································ 6
2.1 Part Number Convention ····································································· 6
2.2 Product Line-Up ················································································· 6
2.3 Package Structure ·············································································· 6
3 Package and Pin Description ······························································· 8
3.1 Outline Drawings ················································································ 8
3.2 Module Pin-out Description ·································································· 9
4 Internal Circuit and Features ······························································· 10
4.1 UVLO ······························································································· 10
4.2 Over Current Protection ····································································· 10
4.3 Fault Output and Auto Clear Function ·················································· 13
4.4 Over Temperature Protection ······························································ 13
5 Absolute Maximum Ratings ································································ 15
6 Bootstrap Circuit ················································································ 17
6.1 Bootstrap Circuit Operation································································· 17
6.2 Bootstrap Capacitor Selection ····························································· 17
6.3 Bootstrap Circuit Initial Charging and Bootstrap Diode ·························· 18
6.4 Recommended Bootstrap Capacitor Value ··········································· 19
7 Interface circuit ·················································································· 21
7.1 General Interface Circuit Example ······················································· 21
8 Power Loss and Junction Temperature Calculation ······························· 22
8.1 Electrical Model ················································································· 23
8.2 Thermal Model ·················································································· 23
8.3 Electrical and Thermal Calculation ······················································ 23
8.4 IPM Design Tool Functions ································································· 24
8.5 Design Example ················································································ 25
9 Packing ···························································································· 28

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1. Introduction
1.1. Introductions
With the global emphasis on energy efficiency, there is ever stricter requirement on the
efficiency of motor drive circuit. Integrated Power Modules (IPMs) are becoming more
popular in the home appliance and industrial motor drive applications, because of higher
efficiency, smaller size, easier assembly and shorter development time.
Our next generation of SIP1A IRAM is developed with the focus on improving the
module efficiency and long term reliability. The combined benefits of advanced Trench
IGBT technology and optimized package design have enabled us to achieve higher
efficiency and improved reliability, along with minimized module and system cost. The
Trench IGBT is able to deliver up to 30% loss reduction compared with NPT IGBT of
same die size. In addition, the new IRAM has achieved as much as 50% reduction in
IGBT junction temperature ripple, thanks to the superior thermal structure of new Gen2
SIP1A package.
This advanced hybrid module is a combination of IR's low VCEON Trench IGBT
technology and the industry benchmark 3 phase high voltage, high speed gate driver in
a fully isolated thermally enhanced package. A built-in high precision temperature
monitor and over-current protection feature, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation. Using a Single in line package with full transfer mold structure and CTI>600V
molding compound minimizes PCB space and resolves isolation problems to heat sink.

1.2. IRAM Design Concept and Technology

Trench IGBT
Trench IGBTs offer significant improvement in terms of loss reduction, over the last
generation of Non-Punch-Through (NPT) IGBTs. For example, Figure 1.1 shows the
comparison of VCEON vs. ICE for NPT IRGB8B60K, Trench IRGB4056D and IRGB4060D
IGBTs. While the first two IGBTs have the same die size, the last one is about 20%
smaller. It is quite clear that the conduction losses can be reduced as much as 30%, for
the same die size. Even with the smaller die, it is still possible to achieve 10% loss
reduction. Since we have optimized the switching characteristics to be quite similar
between Trench and NPT IGBTs, switching loss will largely remain unchanged.
As we know, the current rating of IPM are fundamentally determined by the IGBT power
losses (PLOSS) and IGBT junction to case thermal resistance (RTHJC), as showing in the
equation below.
ΔTJC = PLOSS * RTHJC
IGBT power loss is a function of motor current and other parameters such as switching
frequency. And Junction to case thermal resistance is mainly decided by the IGBT die
size, assuming we are using the same module package. The junction to case
temperature delta (ΔTJC) is usually set at 50ºC which is derived from maximum junction
temperature (TJMAX) of 150ºC and maximum case temperature (TCMAX) of 100ºC.

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 25

20

15

Ice [A]
10
IRGB4056D
5 IRGB4060D
IRGB8B60K

0
0 1 2 3 4 5
Vceon [V] at Vge=15V and Tj=150C

Figure 1.1 IGBT VCEON vs. ICE curve of IRGB8B60K, IRGB4060D and IRGB4056D
The IGBT technology advancement brings two potential opportunities for the new IPM
development. On one side, we can keep using the same size of IGBT die. In this case,
the RTHJC will remain same, while PLOSS at the same current will become smaller.
Therefore, we can increase the current rating while still maintaining the ΔTJC ≤ 50ºC. For
example, it is feasible to develop modules with current rating of 20A, instead of 15A, with
same module package. Therefore, the appliance manufacturer will be able to expand the
power range of their motion control board, without pursuing bigger sized modules.
On the other side, we can use smaller IGBT die if we want to create modules with same
current rating. For example, as shown in Figure 1.1, it is now possible to replace
IGB8B60K with IRGB4060D which is about 20% smaller and achieve lower module cost.
The RTHJC will be bigger in the new module. However, it will be compensated by smaller
power losses of Trench IGBT. In the end, we can still meet the requirement of ΔTJC ≤
50ºC. As an additional benefit, the new IPM can use smaller heat sink which also brings
down the system cost.

Thermal Design
The smaller and thinner IGBT die provides a new challenge in the thermal design.
Because of its small thermal mass, the IGBT junction temperature tends to swing a lot,
especially at low speed operation. In order to improve the transient thermal performance
and reduced the junction temperature ripple, we have added copper heat spreaders
(HS) with 1mm thickness underneath the all six IGBTs and six diodes.
Figure 1.2 shows the junction to case thermal impedance (ZTHJC) curve of IGBT. The red
solid curve is the ZTHJC curve of module without heat spreader, and the blue dashed
curve is for the module with HS. There is a slight difference in the RTHJC value (when
time is infinite). The reason is that while the added heat spreader constitutes one
additional layer in the heat transfer path, it also helps to spread the heat across its
bottom surface due to copper’s excellent thermal conductivity. Therefore, the layers
beneath the heat spreader will have larger effective area for the heat transfer.

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 5.0

4.0

3.0

Zth [C/W]
2.0

Module w ithout HS
1.0 Module w ith HS

0.0
0.0001 0.001 0.01 0.1 1 10 100
Tim e [s]

Figure 1.2 IGBT junction to case thermal impedance for modules with and without
heat spreader
The big difference lies in the time range from 0.01s to 1s. It can be seen clearly that heat
spreader has helped to achieve much lower thermal impedance in this range. Especially
at 0.1s time range, which corresponds to low speed module operation condition of
fMOD=3Hz, the thermal impedance is reduced by almost 50%. The measurement of IGBT
junction temperature shown in Figure 1.3 also verified this advantage.
160
Module w ithout HS
150 Module w ith HS

140
LS IGBT Tj [C]

130

120

110

100
0 1 2 3 4 5
Tim e [s]

Figure 1.3 IGBT TJ measurement for modules with and without heat spreader
While the benefit of heat spreader is significant in lower speed operation, it is less critical
when the motor is running at high speed. For example at fMOD=50Hz, the IGBT
temperature is mainly determined by the RTHJC value, plus the smaller TJ ripple
determined by ZTHJC at 5ms range. It is quite evident from Figure 1.2 that the difference
of thermal impedances is quite small at this time range.
In Gen2 SIP1A IRAM, we further improved the thermal performance by eliminating the
over molded plastics layer found at the back of Gen1 SIP1A modules. The new module
has exposed metal backside. Therefore the RTHJC of both IGBT and diode are reduced
by 15%.

Package Design
• Packaging options include staggered pin-out for maximum creepage distances
• Both straight or 90° bend options for heat sinks parallel or perpendicular to the circuit
board

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• Insulated Metal Substrate technology ensures low thermal resistance and less
stringent flatness requirements for the heat sink. It also offers significant flexibility in
the module layout and internal electrical system.
• Higher operating case temperature (TCMAX=125°C) compared with 100°C TCMAX for
Gen1 SIP1A IRAM. This enables customers to use even smaller heat sink to
minimize system cost.
• Pin to Pin compatible to previous Gen1 SIP1A IRAM by keeping same functionality
for easy adoption.
• Exposed IMS substrate improving the thermal performance.
• Isolation 2000VRMS min
• Molding compound with CTI>600V
• Recognized by UL (File Number: E252584), with TJMAX of 150°C.

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2. IRAM Gen2 SIP1A Product Outline
2.1. Part Number Convention
IR A M 2 5 6 - 1 0 6 7 A 2
Lead Forming blank Straight Leads
(Omit if not used) 2 90° Bend

Power Stage Topology A Open Emitter

Package Code 7 Gen2 SIP1A

Voltage Code 6 600V

Current Rating 10 RMS @ PWM Frequency & Tc=25°C

Essential Code 256 Three phase inverter

IPM Family A Appliance & Industrial (IR)

Figure 2.4 Gen2 IRAM Part Number System

2.2. Product Line-Up

The Table 2.1 below shows the modules that have been released to production.
Additional modules are under development which will extend the current to wider ranges.
Table 2.1 Gen2 SIP1A IRAM Product Line
Rating Isolation Typical IRMS @
Part Number Current Voltage Package Voltage Load Tc = 100ºC
(A) (V) (VRMS) (W) (ARMS)
IRAM256-1067A(2) 10 750W 5
Gen2
IRAM256-1567A(2) 15 600 2000 1000W 7.5
SIP1A
IRAM256-2067A(2) 20 1500W 10

2.3. Package Structure

Figure 2.2 and Figure 2.3 show the basic structure of IRAM Gen2 SIP1A. It features an
exposed Insulated Metal Substrate (IMS) technology which provides enhanced thermal
performance and reduced RTHJC for both IGBT and diode. In addition, exposed IMS
ensures less stringent flatness requirements for the heat sink. It also offers significant
flexibility in the module layout and internal electrical system.

New Enhanced IMS Substrate features:

• Higher Reflow Temperature
• Higher Dielectric Strength
• Lower Thermal Resistance

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 Figure 2.5 IGBT & Diode on heat spreader (6x)

Figure 2.6 Exposed IMS

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3. Package and Pin Description
3.1. Outline Drawings
Packaging options include staggered pinout for maximum creepage distances and
straight (IRAM256-1067A) or 90° (IRAM256-1067A2) bend options for heat sink parallel
or perpendicular to the circuit board.
Dimensions in mm

Figure 3.7 IRAM256-1067A package drawing

Figure 3.8 IRAM256-1067A2 package drawing

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3.2. Module Pin-out Description
Table 3.1 shows the pin arrangement for IRAM Gen2 SIP1A module with pin description.
Table 3.2 Pin arrangement for IRAM Gen2 SIP1A
Pin Name Description
1 VB3 High Side Floating Supply Voltage 3
2 W,VS3 Output 3 - High Side Floating Supply
3
N/A None
4
5 VB2 High Side Floating Supply Voltage 2
6 V,VS2 Output 2 - High Side Floating Supply
7
N/A None
8
9 VB1 High Side Floating Supply Voltage 1
10 U,VS1 Output 1 - High Side Floating Supply
11
N/A None
12
13 V+ Positive Bus Input Voltage
14
N/A None
15
16 ITRIP Current Protection Pin
17 VRU Low Side Emitter Connection - Phase 1
18 FLT/EN Fault Output and Enable Pin
19 VRV Low Side Emitter Connection - Phase 2
20 HIN1 Logic Input High Side Gate Driver -
21 VRW Low Side Emitter Connection - Phase 3
22 HIN2 Logic Input High Side Gate Driver -
23 HIN3 Logic Input High Side Gate Driver -
24 LIN1 Logic Input Low Side Gate Driver -
25 LIN2 Logic Input Low Side Gate Driver -
26 LIN3 Logic Input Low Side Gate Driver -
27 VTH Temperature Feedback
28 VCC +15V Main Supply
29 VSS Negative Main Supply

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4. Internal Circuit and Features
Figure 4.1 demonstrates the internal circuitry of Gen2 SIP1A module. The 600V IRAM
module contains six IGBT dies each with its own discrete gate resistor, six commutation
diode dies, one three phase monolithic, level shifting driver chip, three bootstrap diodes
with current limiting resistor and an NTC thermistor for over temperature trip.
The module has the following features:
• Integrated gate drivers and bootstrap diodes
• Temperature monitor
• Protection shutdown pin
• Low VCEON Trench IGBT technology
• Under-voltage lockout for all channels
• Matched propagation delay for all channels
• 3.3V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Motor power range 0.25~0.75kW / 85~253 Vac
• Isolation 2000VRMS min and CTI> 600V
• High operating case temperature, TCMAX=125°C

4.1. UVLO
This module provides undervoltage lockout protection on both the VCC (logic and low-
side circuitry) power supply and the VBS (high-side circuitry) power supply. Figure 4.2 is
used to illustrate this concept; VCC (or VBS) is plotted over time and as the waveform
crosses the UVLO threshold (VCCUV+/- or VBSUV+/-) the undervoltage protection is enabled
or disabled.
Upon power-up, should the VCC voltage fail to reach the VCCUV+ threshold, the HVIC will
not turn-on. Additionally, if the VCC voltage decreases below the VCCUV- threshold during
operation, the undervoltage lockout circuitry will recognize a fault condition and turn off
all IGBTs, and the FLT/EN pin will transition to the low state to inform the controller of
the fault condition.
Upon power-up, should the VBS voltage fail to reach the VBSUV+ threshold, the HVIC will
not turn-on. Additionally, if the VBS voltage decreases below the VBSUV- threshold during
operation, the undervoltage lockout circuitry will recognize a fault condition, and
shutdown the high-side IGBT. However, there will be no FLT/EN low in this case.
The UVLO protection ensures that the module operates only when the gate supply
voltage is sufficient to fully enhance the power devices. Without this feature, the gates of
IGBT could be driven with a low voltage, resulting in the power switch conducting current
while the channel impedance is high; this could result in very high conduction losses
within the IGBT and could lead to power device failure.

4.2. Over Current Protection

The Gen2 SIP1A IRAM is equipped with an ITRIP input pin. Together with external shunt
resistor, this functionality can be used to detect over current events in the negative DC
bus. The internal HVIC gate driver will continuously monitor the voltage on ITRIP pin.
Whenever the ITRIP voltage exceeds the reference voltage (VITRIP+, 0.49V typical), a fault

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signal will be generated on FLT/EN pin and all six IGBTs will be turned off, as shown in
the Figure 4.3 below.

V+ (13)

Q1 D1 Q2 D2 Q3 D3

VRU (17)
Q4 D4 Q5 D5 Q6 D6
VRV (19)
VRW (21)

R1

VB1 (9) C1 R2 R3
U, VS1 (10)
VB2 (5) C2
V, VS2 (6)
VB3 (1) C3 R4 R5 R6
W, VS3 (2)
D9 D8 D7
22 21 20 19 18 17
23 VS1 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16

24 HO1
R9
25 VB1 LO2 15

1 VCC Driver IC

HIN1 (20) 2 HIN1 LO3 14

HIN2 (22) 3 HIN2

4 HIN3 COM 13
HIN3 (23) LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS
5 6 7 8 9 10 11 12
LIN1 (24)
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
R7

C7 R8
VTH (27) C6 C5
VCC (28) C4
VSS (29)

Figure 4.9 IRAM Gen2 SIP1A module schematics

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 Figure 4.10 UVLO protection

Figure 4.11 ITRIP and Fault Timing Waveform.

The threshold of over current protection can be determined by VITRIP+ / RSHUNT, if single
bus shunt is used and it is connected directly to ITRIP pin. The delay time of fault reporting
and ITRIP shutdown are specified in the datasheet. They are also shown below in Table
4.1.

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 Table 4.3 Dynamic Electrical Characteristics.
Symbol Description Min Typ Max Unit Conditions
TFLT ITRIP to Fault propagation 400 600 800 ns VIN=0 or VIN=5V, VITRIP=5V
delay
TITRIP ITRIP to six switch turn-off --- --- 1.5 µs IC=5A, V+=300V
propagation delay (see fig.

In the case of short circuit (which is the worst case of over current), the current level will
rise very quickly. It is critical to ensure all IGBTs are turned off as soon as possible.
Since the IGBTs in Gen2 SIP1A IRAM are short circuit rated, the safe operation of
module can be guaranteed by minimizing the delay of external current sensing circuit
and making sure its delay plus TITRIP is less than IGBT short circuit rating. Because IGBT
short circuit rating depends a lot on the gate voltage and junction temperature, it is
important to consider all possible conditions. Table 4.2 below shows the short circuit
rating of IGBT in IRAM256-1067A, under typical conditions.
Table 4.4 IGBT Short Circuit Ratings.
Symbol Description Min Typ Max Unit Conditions

SCSOA Short Circuit Safe 5 --- --- µs TJ=25°C, V+=400V,

Operating Area VGE=+15V to 0V
SCSOA Short Circuit Safe 3 --- --- µs TJ=100°C, V+=400V,
Operating Area VGE=+15V to 0V

4.3. Fault Output and Auto Clear Function

As described in the previous section, in case of over current event, the FLT/EN pin will
become low with the turning on of open-drain MOSFET. When over current condition is
over, the open-grain MOSFET will be turned off. However, all IGBTs will remain off, until
RCIN (shown in Figure 4.1) voltage can reach its positive going threshold. This is called
Fault auto clean function, and this time is shown as TFLT-CLR in Figure 4.3.
The length of TFLT-CLR is determined by resistance R7 and capacitor C5, and shown in
datasheet as Table 4.3.
Table 4.5 Fault clearance time
Symbol Description Min Typ Max Unit Conditions
Post ITRIP to six switch turn- 1.1 1.7 2.3 TC = 25°C
TFLT-CLR ms
off clear time (see fig. 2) 1 1.5 1.9 TC = 100°C

It is critical that PWM generator must be disabled within Fault duration to guarantee
shutdown of the system, and overcurrent condition must be cleared before resuming
operation.

4.4. Over Temperature Protection

All Gen2 SIP1A IRAM modules have internal NTC thermistor to sense the module
temperature. Figure 4.4 shows the correlation between NTC temperature (TTH) and IGBT
junction temperature (TJ), which can be used to set the threshold for over temperature
protection.

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 Figure 4.12 Correlation of IGBT junction temperature and NTC temperature of
IRAM256-1067A

Please note this curve is obtained at rated current condition. For example, Figure 4.4 is
for IRAM256-1067A, and created at following condition as specified in module
datasheet.
Sinusoidal Modulation, V+=400V, Iphase=5ARMS, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6

This correlation curve will be different in customer application, if for example the motor
current is less than 5ARMS. The general guideline is that the difference between TJ and
TTH will be smaller, if the module dissipates less heat. In the extreme case of zero
current, TJ and TTH will be identical. Therefore, the curve in Figure 4.4 will be worst case
(highest TJ) because of maximum current.
It is also possible to customize the curve to better suit specific condition. One option for
approximation is to calculate the power loss in both conditions (rated condition and
custom condition) using the online tools (illustrated in section 8). Afterward, (TJ - TTH)
difference can be scaled based on ratio of module power losses.

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5. Absolute Maximum Ratings
Here are the absolute maximum ratings from module datasheet.
Table 5.6 Absolute maximum ratings of IRAM256-1067A
Symbol Description Min Max Uni
t
VCES / VRRM IGBT/ FW Diode Blocking Voltage --- 600
V
V+ Positive Bus Input Voltage --- 450
IO @ TC=25°C RMS Phase Current (Note 1) --- 10
IO @ TC=100°C RMS Phase Current (Note 1) --- 5 A
IPK Maximum Peak Phase Current (Note 2) --- 15
FP Maximum PWM Carrier Frequency --- 20 kH
z
PD Maximum Power dissipation per IGBT @ TC =25°C --- 28 W
VISO Isolation Voltage (1min) --- 2000 VR
TJ Operating Junction Temperature -40 150
(IGBT/Diode/IC)
TC Operating Case Temperature Range -40 125 °C
TSTG Storage Temperature Range -40 125
T Mounting torque Range (M3 screw) 0.8 1.0 Nm
IBDF Bootstrap Diode Peak Forward Current --- 1.0 A
PBR_Peak Bootstrap Resistor Peak Power (Single Pulse) --- 15 W
VS1,2,3 High side floating supply offset voltage VB1,2,3 - 20 VB1,2,3 +0.3 V
VB1,2,3 High side floating supply voltage -0.3 600 V
VCC Low Side and logic fixed supply voltage -0.3 20 V
VIN Input voltage LIN, HIN, ITRIP, FLT/EN -0.3 7 V

• VCES / VRRM
IGBT, diode and HVIC driver are rated 600V. In addition, all modules are tested for
leakage current at 600V, 100% at module production line. Please note modules are not
tested for switching characteristics at 600V DC bus.
• V+
This is the maximum DC voltage for normal operation with switching action. The module
is tested 100% at production line, for switching behavior at V+=450V.
• IO @ TC=25ºC and TC=100ºC
This is the maximum current the module can handle in steady state, due to thermal
limitation. Please see section 8 for more detailed description.
• IPK
The maximum current in the pulse condition.
• FP
The maximum PWM switching frequency.
• PD
Maximum Power dissipation per IGBT, This can be calculated as:
PD = (TJMAX – TC ) / RTHJC
• VISO

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All Gen2 SIP1A modules are rated 2000VRMS for 1 minute. All modules are also
recognized by UL, under File Number E252584. The isolation test is performed 100% at
module production line.
• TJ, TC, TSTG
The maximum temperature ratings of module are 150ºC for junction temperature (IGBT,
diode and HVIC) and 125ºC for case temperature, as well as storage temperature. The
minimum temperature ratings are -40ºC for all three parameters.
• IBDF
This is the maximum current for the bootstrap diode. Please note the current is limited by
the internal bootstrap resistor of 22Ω.
• PBR_Peak
This is the maximum power rating for the bootstrap diode in pulse condition, due to
thermal limitation.
• VS1,2,3
This specifies the VBS voltage range from -0.3V to 20V, for all three phases.
• VB1,2,3
VB is rated up 600V, for all three phase.
• VCC
The maximum voltage rating for VCC is 20V. It is also suggested to have typical VCC
voltage at 15V, with less than +/-10% tolerance, in order to reduce the voltage range on
VBS.
• V+
All input voltage (HIN, LIN, ITRIP, FLT/EN) has maximum voltage rating of 7V.

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6. Bootstrap Circuit
6.1. Bootstrap Circuit Operation
The high and low-side driver IC requires a floating voltage supply for each of the three
high-side circuits that provide gate pulses to high-side IGBTs. A very convenient way of
obtaining such floating voltage supplies is usage of bootstrap circuits. The following
Figure 6.1 shows such an implementation for one phase of a three-phase switching
inverter drive. The circuit is repeated for each phase.

Figure 6.13 Schematic of bootstrap circuit for one phase

When the low-side IGBT is on, the bootstrap capacitor CBS charges through the
bootstrap diode DBS, resistor RBS and low side switch to almost 15V, since the Vs pin of
the IC is almost at ground potential. The capacitor CBS is so designed that it retains most
of the charge when the low-side device switches off and the Vs pin goes to almost the
bus potential. Then, the voltage VBS being almost 15 V, the high-side circuit of the driver
IC is biased by the capacitor CBS.

6.2. Bootstrap Capacitor Selection

Selection of the bootstrap capacitor, diode and resistor is governed by several factors:
1. Voltage VBS has to be maintained at a value higher than the undervoltage lockout level
for the IC driver.
2. The capacitor CBS does not charge exactly to 15V when the low-side switch is turned
on, depending upon the drop across the bootstrap diode (VFBS) and low-side switch
(VCEON).
3. When the high side switch is on, the capacitor discharges mainly via the following
mechanisms:
a. Gate charge QG for turning the high-side switch on
b. Quiescent current IQBS to the high-side circuit in the IC
c. Level-shift charge QLS required by level-shifters in the IC
d. Leakage current IDL in the bootstrap diode DBS

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 e. Capacitor leakage current ICBS (ignored for non-electrolytic capacitors)
f. Bootstrap diode reverse recovery charge QRRBS

Charge lost by the bootstrap capacitor in one switching cycle is given by the following
equation:

(1)

where fSW is the switching frequency and the other parameters are as defined earlier.
This charge loss in the bootstrap capacitor as given above results in a drop in the
voltage VBS across it. The value of CBS can be designed based on the desired voltage
drop in VBS as follows,
(2)

The drop in VBS can be set as a percentage of the value of VBS before turn-on of the high
side switch. The lowest value of VBS in one modulation cycle is given by
(3)
Note that the above equation gives the worst-case value of the bootstrap voltage with
the low side IGBT conducting current in conjunction with high side diode. Current
reversal leads to low side diode conduction in conjunction with the high side IGBT,
whereupon the equation (3) changes to:
(3a)
Combining equations (1), (2) and (3) and using ∆VBS = 1 % of VBS:

(4)

For simplified calculation, equation (4) can be approached by

(4a)

ITOT is the total equivalent discharge current of CBS described above, and practically 1mA
can be used for a good estimation for CBS.

6.3. Bootstrap Circuit Initial Charging and Bootstrap Diode

A series resistor RBS of 22Ω is included in the IRAM module. This limits the peak current
in the bootstrap circuit during initial charging, which has been known to cause driver
latch-up under fast switching conditions. Typically, the low side switch is switched with a
constant duty-cycle for charging the bootstrap capacitor initially. The time required for
the initial bootstrap capacitor charging, after which input signals can be transferred to the
switch gates, is given by:
(5)

In the above equation, D is the duty cycle of the charging pulses. Note that this
discounts effects of discharging processes and hence gives a minimum charging time.

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When high side switch or diode conducts, the bootstrap diode supports the entire bus
voltage. Hence for a 300-400V system, DBS has to be rated at 600V. The peak current
seen by DBS is determined by the series resistor RBS. However since this current spike is
quite narrow, it does not seriously affect diode selection. Average current handled by the
bootstrap diode is given by the product of the charge supplied to CBS during every
switching cycle expressed by equation (1) and the switching frequency fSW. In order to
minimize the power loss in the diode and to reduce the size of the bootstrap capacitor,
reverse recovery charge in DBS should be as low as possible. For the same reason,
reverse leakage current should also be low at the highest operating temperature. Finally,
the knee voltage of the diode should be low to minimize the voltage drop across it during
charging.

6.4. Recommended Bootstrap Capacitor Value

The Gen2 SIP1A IRAM module contains three bootstrap diodes and a series resistor
connected internally between the 15V supply VCC and individual VB pins of the three
phases. Hence only appropriate bootstrap capacitors need to be connected on the
external board. Some layout aspects have to be considered before doing that. Bootstrap
capacitors should be connected as close to the VB and VS pins as possible to reduce
stray inductance in the connections.
Furthermore, it is recommended to use a small high frequency capacitor in parallel to a
larger low frequency bootstrap capacitor for local decoupling.
Here is an example on the bootstrap capacitor selection. If the switching frequency is fSW
= 20kHz, and the allowable discharge voltage ∆VBS =0.1V, from equation (4a), we can
calculate the CBS =0.5μF. The capacitance is generally selected to 2-3 times of the
calculated value in consideration of dispersion and reliability. Therefore, a 1.5μF
bootstrap capacitor is recommended.
In the IRAM datasheet, we provide recommended bootstrap capacitor values under
different switching frequencies in a chart. From the following chart, at 20kHz switching
frequency, 1.5μF is recommended.

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 Figure 6.14 Recommended bootstrap capacitor value vs. switching frequency

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7. Interface circuit
7.1. General Interface Circuit Example

Figure 7.15 Typical Application Connections

Notes:
1. Electrolytic bus capacitors should be mounted as close to the module bus
terminals as possible to reduce ringing and EMI problems. Additional high
frequency ceramic capacitor mounted close to the module pins will further
improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals,
the capacitors shown connected between these terminals should be located very
close to the module pins. Additional high frequency capacitors, typically 0.1µF,
are strongly recommended.
3. Value of the bootstrap capacitors depends upon the switching frequency. Their
selection is explained in the previous section. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the
VCC.
4. After approx. 2ms the fault (FLT) is reset.
5. PWM generator must be disabled within fault duration to guarantee shutdown of
the system, overcurrent condition must be cleared before resuming operation.

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8. Power Loss and Junction Temperature Calculation
IPM design tool is a software tool to calculate power loss and junction temperature for
IRAM, which is available online at:
http://ec.irf.com/webulator/simConfig.do?appNode=iSine
Since junction temperature is a critical factor for long-term reliability of power module
operation, this tool provides very important information in addition to the data sheets. It
can be used to choose appropriate module based on application needs and to size the
heat sink to insure long-term reliability.
In order to calculate the power loss, IPM design tool uses the built-in electrical models
that describe the conduction and switching characteristics of both IGBT and diode
integrated in the power module. Together with the built-in thermal impedance model, this
tool is able to predict the maximum temperature inside a power module under various
operating conditions, such as switching frequency, modulation frequency and case
temperature.
Figure 8.1 shows the web interface. Users can select up to three parts for comparison.
After modifying the parameters according to the particular application, three kinds of
analysis are available to calculate power loss, junction temperature, and maximum RMS
motor current etc.
The basic structure of this tool is shown in Figure 8.2. The “ElectricalCalc” function
calculated the power loss of the semiconductor based on electrical model and input
conditions like switching frequency, bus voltage, etc. The loss information is then passed
to “ThermalCalc” function to calculated junction temperature.

Figure 8.16 IPM design tool interface

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 ElectricalModel ThermalModel

Input Loss Tj
ElectricalCalc ThermalCalc
Condition

Figure 8.17 IPM design tool structure

8.1. Electrical Model

The electrical model describes the conduction and switching loss of IGBT/diode with
regards to current, under dc or single switching condition. The behavioral model is
adopted instead of physical model because of fast simulation and reasonable accuracy
in predicting the power losses. The basic equations are shown below.
VCEON = VT + a.I b
V F = VTD + ad .I bd
( )
E ON = h.1 + h 2 I x I k
(
E OFF = m1 + m2 I y I n )
E RR = d1.I d 2

The conduction and switching loss of the IPM are measured at various current levels so
that curve fitting method can be used to derive the model parameters. The junction
temperature is set to be at 150ºC because this is the worst case in terms of power
semiconductor losses.

8.2. Thermal Model

The simple thermal resistance model RTHJC describes the steady state temperature rise
between junction and case. However, when the modulation frequency of the inverter is
relatively low, junction temperature will have large ripple beyond the average as
described by Rth. The reason is that the power loss is not constant but has a
fundamental frequency which is same as modulation. Therefore, IPM design tool uses
thermal impedance from junction case to calculate the temperature ripple, such as the
one shown in Figure 1.2.

8.3. Electrical and Thermal Calculation

Under sinusoidal modulation, the power loss has to be calculated in each switching cycle
because the device current is changing within the half modulation cycle, as illustrated in
Figure 8.3. The upper portion is the high side IGBT current which is used to calculate
EON, EOFF and ECI of IGBT. The lower potion in Figure 8.3 is the low side diode current for
ERR and ECD of diode.

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 High Side IGBT Current
Low Side Diode Current
Eoff
Eon

Eci

tsw

Err

Ecd

0 30 60 90 120 150 180

Figure 8.18 Loss calculation of sinusoidal modulation

Because the loss is not constant over time, its shape depends on current waveform and
device parameters. Figure 8.4 illustrate the power loss of IGBT in a typical case. The
cyan curve in the upper portion of Figure 8.4 is the power loss, while the purple curve is
a simplification in order to use ZTHJC curve to calculated temperature ripple. The blue
curves are average power loss and junction to case temperature rise, which can be quite
different than the real case when modulation frequency is only a few Hertz.

Figure 8.19 Junction temperature calculation under sinusoidal modulation

8.4. IPM Design Tool Functions

The electrical and thermal models of all released IPM are already incorporated in IPM
design tool. When the user selects the part, the associated model will be used for loss
and thermal calculation.
This tool provides three analysis tools, based on models and calculation method as
describe above, in order to help user choose the optimal IPM for their application.
• Switching Frequency Analysis: calculate the maximum motor current under
different switching frequencies.
• Component Comparison: provide both power loss of IPM and maximum
allowable case temperature, which can be used for heat sink selection
• Power Loss Analysis: calculate power loss under different switching frequencies.

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8.5. Design Example
In order to choose the right IPM, the designer needs to collect the information about the
intended application. For example, a washing machine application requires maximum
6ARMS phase current at 16kHz switching frequency and dc bus voltage of 320V.
Maximum junction temperature is limited to be 150°C. In this case, both IRAM256-1067A
and IRAM256-1567A modules are able to deliver the required output current. However,
because power losses and internal RTHJC will be different for these two modules, the heat
sink required to maintain junction temperature under 150ºC will also be different.
IPM design tool can be used to calculate the required heat sink Rth. Figure 8.5 shows
the result which includes both power loss of inverter and maximum heat sink
temperature for this application, using Component Comparison analysis.

Figure 8.20 Component comparison of 6A and 10A modules

At 6ARMS, the power losses are 70W for the IRAM256-1067A module and 66W for
IRAM256-1567A. The maximum allowable case temperatures are 91ºC and 106ºC, for

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10A and 15A module respectively. The required heat sink Rth can be calculated as
following:
Rth(S-A) = (TC – TA) / P - Rth(C-S)
Assuming the ambient temperature of 50ºC and Rth(C-S) of 0.1ºC/W, the calculated heat
sink Rth are showing in Table 8.1.
Table 8.7 Heat sink Rth comparison
Module Heat sink Rth
IRAM256-1067A 0.49ºC/W
IARM256-1567A 0.75ºC/W
As can be seen from the above calculation, the smaller IPM will require a larger size
heat sink. Therefore, the final choice should be made based on minimizing total system
cost/size, including both the IPM and heat sink.
Same method can be used to choose the right IPM for air conditioner application, which
usually has 400V dc bus regulated by PFC front-end. Switching frequency will be lower
than washer application in order to limit EMI noise. For example if the application
requires 10ARMS current at 6kHz switching frequency, IPM design tool can be used to
show the tradeoffs between 15A and 20A IPMs.
This tool can also be used to analyze the effect of various design parameters such as
modulation index, switching frequency, heat sink temperature and power factor etc on
the current rating of the power module. This information can help designer to fine tune
the system parameters to obtain an optimum solution for the application.
For example, one important design parameter is the switching frequency. In this case,
IPM design tool can be used to investigate the maximum motor current and power
losses of IPM at different switching frequency, as shown in Figure 8.6 and Figure 8.7.
User can also select up to three parts in each type of analysis for comparison purpose. It
is quite obvious that loss increase and maximum current decrease while increasing
switching frequency.

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 Figure 8.21 Switching frequency analysis of IRAM256-1067A

Figure 8.22 Power loss analysis of IRAM256-1067A

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9. Packing

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