United States Patent {AE CSOD 1$00694201 8B. oy (1) Patent No: US 6,942,018 B2 Goodson et al. 45) Date of Patent: ‘Sep. 13, 2005 (6! ELECTROOSMOTIC MICROCHANNEL (6) References Che ‘COOLING SYSTEM US. PATENT DOCUMENTS (25) vento: Kenneth E, Goodson, Belmont, CA 0n34m6 A 121078 Mewes ane (US; Chiantioa Chen Stauton CA tunnaas A "alert ken sas (US) Divi: Huber Mousa Vem, M259 A106 en sta {US} Devi E aber, Moma timo A sate Aaa aolass CAS): na Tag Melo Pas iste A “hem fia tim an ia (09) Mo, (Comin) Steed, CA (US); Dam 5. Laser, : Sin Franco, CA (US) dames C. FOREION PATENT DOCUMENTS iden Ui ity ER Tian a HE nM Satay enon, CA (USS: Evelyn Ning Wang, Stanford, CA OTTER PUBLICATIONS (US) Shuln ong, Stanyral CA.” “Mice excangen”, Wer, a, America Sci {US}, Lis Zhang, Stony: CA(US) oly of Mechanil Enger, Dye Spin ad Cone DDhion, DSC, 1990 w 1p. 150-1, (73) Aga: The Board of Trastes ofthe Lland 7 Stanford Jonlor Universtiy Safed, uy Primary Esaminer—TerelL. 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Dslore Blin, Ape 1982, 90 24, NO 1A, pam {Dats posse cooling wth conection to msi fow through sendy pump Conde, IBM Techn Disc Sure Blin, Bex 1983, vol 25, No. 7A, 9.3325, Coating syste fr dat process wi ow restric in sscondery np to it bypassing tr Bow” Ca ings tay IBM Technical Dosw Balen, Oct. 1983, 0 38, No", 92658 “Cold pla for hema condition mule wiih improved flow pater ao Bele base” vung, et ay IBM Teche skal Disclose alti, Fe, 1983, wo 35, No.9, p. 417 “Sircuefr the removal ot beat om an integrated cet rode" Arto, [BM Technical Disonte Balen, Nov. 1078, voi 22, No 6p 2204-2096 “Hts sink design for cooling todules in a forced ait crvitorment, Aol, stale THM Techs! Disclosure Buln Nov 199 yo 22, No, 8p. 2297-2398 ‘Distbtedpowerbernal corto Chield es, TDM “Techie! Daou Bullet A, 1979, voL 33, No. 3, iiss “Ligue Nellows est ik”, Kile, eta, BM “Tecnial Dislosae Bale, Mat 19, vl 31, N01. diserize “Cooling vie fr conte eter” aey es, 1M ‘Tecnis iscnue Balin Ape. 175,00. 21, No. Tl seas. “Sion beat sink method to conto integrated ict chip opeaing smperstues, Absa et ais IDM Tech Disclose Balin. 979 vo 31, No 8 99978-9380. “Chip cooing device, IBM osc Discsre Dulin, Feb. 1585, ol 30, No.9, p 435-436, *Coning tem fr ehip exon card, IDM Tesi Disclose Bale, Sep 1985, 03, No.4 p. 39-40, Page 6 “Piping system with valves controlled by processor for beating circuit modules in a sclected temperature profile for sealing integrity test under temperature sires" IBM Tech ial Disclosure Bulletin, Oct. 1987, vol. 30, No.5, p. 336. “Circuit module cooling with coaxial bellows providing inlet, oulet and redundant connections lo water-cooled tlement, IBM Teetnical Disclosure Bulletin, Oct. 187, ‘ol. 30, No.5, p. 345-347. “Cold plate for thermal conduction module with ile for cooling water ace highest power chips”, IRM Technical Disclosure Bulletin, Oct 1987, vol. 30, No.5, p. 413, “Heat exchanger modules for dala processor with valves copecated by pressure from cooling water pump”, IBM Tech ‘ial Diselosure Bulletin, Oxt. 1987, vol 30, No.5, p. 419, “Enhanced cooling of thermsl condvetion module”, IBM. Technical Dislosire Bulletin, Oct. 1987, vol. 30, NO. 5,p. 226, “legrlly grooved semiconditor chip and best snk" IBM. ‘Technical Disclosure Bulletin, Oct 1971, vol. 14, No.5. 1425, “Stmature for cooling by nucleate boiling", Risen, IBM ‘Technical Disclosure Bulletin, Ape 1975, val. 18, No.1, p. 3700. “Process for nucleate boiling enhancement”, Chu, et al, IBM Technical Disclosure Bulletin, Dee. 1975, vol. 18, No. Typ. 2227, “Electoersion micropump", TBM Technical Disclosure Bulletin, May 1990, val. 32, No. 12, p. 42-343. “Thin heat pipe for cooling components on printed circuit boanis" IBM Technical Disclosure Bulletin, Dec 1991, vol 34, No. TB p. 321-322. “Aheatuansfer enhancement method for forced convection bonded-fin beatsnks", Waldvogel, Motorola Technical Developments, Dec, 1997, p. 158-159, ‘Aluminum silicon carbide phase change beat spreader”, Waldvogel, Motorola Technical Developments, Jun: 1999, 226-230, “A idea for maintaining a stable thermal eavirament for clecttonic devices, Slug, ets, Reseateh Disclosure, Aug, 2001, p13 12 “Auronomous displacement of 2 solution in a microchannel ‘yy another solution", Reseach Disclosure, Jua. 2001, p. 1086, “Thermal ink jt print head eariage with iotegal uid cooling capabilites", Barner, eta, Xerox Disclosure Jou ‘al, Feb. 1996, ol. 21, Nov 1p. 3-34, “Semieonduetr laser body beat sink", Teamontana, Xerox Disclosure Journ, Dee. 1985, vol. 10, No.6, p379-381 “Heat generation and transport in sub-micron semiconduc- tor devices”, Fushinobu et al, American Society of Mechanical Engineers, Heat Taasier Division, (Publica 1) HTD; 1993; vol. 253, p. 21-28, Integrated micro heat snk for power molichip module”, Gillot etal, TEEE Transactions on Indusry Applications; Jan-Feb. 2000; vol. 36, No.1. 217-221 “Integrated single and two-phase micro beat sinks under IGBT chips, Gilt et al, IEEE. Transactions on Compo- nenis and Packaging Techoologies: 1999; vol 22, No.3 p. 384-389, “Microchanoel heat exchangers: review" Goodling, Pro- ceedings of SPIE—The International Society for Optical Engineering; 1993; vol. 1997, p. 66-82.US 6,942,018 B2 Page 7 “Parial elecrocsmotie pumping in complex capillary sys~ tems. Part 2: Fabrication and application of 2 micro total analysis sytem suited for continuous volumetie nto ions, Guenat etal, Sensors and Actuators, B: Chemical, Feb. 2001; vol. 72, No.3, p. 273-282. “Miro-chanoel heat exchanger optimization”, Harpo et al, Proceedings—IEEE Semicooductor Thermal and Ter perature Measurement Symposium, Feb. 1991; p. 59-63, “Design and fabrication of a cross flow micro heat ‘exchanger’ Haris ct, Journal of Microlectromechnical ‘Systems; Dee. 2000; vol. 9, No.4, p. 502-508, *Electoosmotie pumping within chemical sensor system iterated on silicon", Harrison etal, Conference: 1991 Intemational Conference on Solid Stas Sensors and Act tors Jun. 24-28, 1991, San Francis, CA, USA. *Nomuniform temperature distribution in electronic devices ‘cooled by tow in parallel microchannel", Hetson etal, IEEE Transactions on Components and Packaging Tech nologies; Mat. 2001; vl. 24, No.1, p. 16-23 “Bwsed quartz substrates for microchip electrophoresis", Jacobson etal, Aaalyical Chemisty I 1 1995; vo. 67, No. 13, p. 2059-2068. “Themal-hydeaalie performance of small scale microcha- ‘el and porous-mediaheat-exchangers" Jiang et al inter ational Journal of Heat and Mass Transfer; Ma. 2001; vol fo. 5, p. 1039-1051 “Fabrication and characterization of a microsystem for miero-seale heat wansfer study", ing etal Journal of Micromechanics and Microenpincering: Dec. 1999; val. 9, No.4, p. 422-428 "Miero-cbannel beat sak with integrated temperature se: ‘ots for phase transition study” ing et al, Proceedings of the IEEE Micro Electio Mechanical Systems (MEMS); 1999; p. 159-168 “Hleat-eansfer microstnictures for integrated cizcite, ‘Tuckerman, Dissertation submitted Dept. of Blestrical Engineering, Stanford University, Feb. 1984, “Mie beat exchangers fabrcaed by diamond machining” Friedrich, eta, Precision Engineering, vol. 18, No 1 Jon 1994, p, 56-59. Blecioceniti fow conte! ia micro chianesproiced by scanning excimer Ise ablation”, Wagaet ett, Proceedings of SPIE The Intertations! Society for Optical Engineet- Jing: 2000; vol. 4088, p. 337-340. Thermal management in semiconductor device packag Jing", Mabalingam, Proceedings ofthe IEEE, vol. 73, NO. 9, Sep 1985, p. 1396-140, “Applicability of Taitonal tubules single-phase forced conection correlations 10 non-circular mirochannels", ‘Adams ea, Interational Jouraal of Heat and Mass Trans. fee, 1999; vol. 42, No. 23, p. 411-4415, Experimental investigation of single-phase forced coavee: ion in mierochaneels", Adams etal, Intemational Journal ‘of Heat and Mass Transfer; Mar-Apr. 1998; vol. 41, No 6-7, p. 851-857, “Liguid anspor in rectangular microchannel by clecioas- ‘motic pimping”, Arulnandam etal, Colloids and Surfaces ‘A: Physicochemical and Engineering, Aspects; 2000; Wl 161, No.1, p. 89-102. “Experimenta esults for low-temperatre silicon microma- chined micro hea pipe arays using water and methanol 3% ‘working uid, Badran eta, Experimental Heat Transfer; (ct -Dec. 1997; vol 10, No, p. 253-272, "Optimization of condi’ shape in micro beat exchanges", ‘Bau, Ileratioal Jounal of Heat and Mase Transfer, Sep. 10%; wo 41 No. 18, p- 2717-2723. ‘Modular microchannel coole heatsinks for high average power laser diode arrays", Beach et al, IEEE Journal of ‘Quantum Elecconis; Apr. 1992; vol. 28, No.4 . 966-976. Two-phase electronic cooliog_ using mini-channel and ‘microchannel beat sinks Part 2~ low rate and pressure ‘drop constrains”, Bowers et al, Journal of Eletronte Pack aging, Transactions ofthe ASME; Dec. 1994; vol. 116, No. 4p 398-305 “High fax boiling in low Now ras, low pressure drop ‘mini-channel and micto-channel beat sinks”, Bowers etal, Tnermationa Jouroal of Heat and Mase Transfer; Jaa 1994, vol. 37, No.2, p321-332, “Microow devices for minstrized chemi tems", Bueigenbach tal, Proceedings of ‘atonal Society for Optical Engineering; 1998; vo. 3539, p SIL “Fluid flow and heat transfer in microubes", Choi etal, American Society of Mechanical Engineer, Dynamic Sys ‘ems and Contol Division Publication) DSC; 1991; vo. 32, p.s134 “Optimum design of microchannel beat sinks", Choquete et al, American Society of Mechanical Engineers, Dynamic ‘yiems and Control Division (Publication) DSC; 1996; vel 59, p. 15-126, “Manifold microchanael best sinks! Theory and experi ment", Copeland et al, American Society of Mechanical Engineers, EEP, 1995; yl. 10-2, p, 829-835, *Pabriction and testing of microchannel beat exchangers, Cla etal, Proceedings of SPIE—The International Society for Optical Engineering; 1995; vol. 2640, p. 152-160. “Forced convection beat transfer in parallel channel array imcrochantel heat exchanger, Cuts a, American Soci tty of Mechanical Engines, Heat Transfer Division, (Pub- lication) HTD; 1996; vol. 338, p. 17-23 “Electoosmosis: A liable fu propulsion system for Now injection analysis", Dasgupta etal, Analytical Chemise; Jun. 1, 1994; Wo. 66, No.1, p. 1702-1798, “Micromachining of buried mieto channels in silicon”, de Boer eal, Jouraal of Microelectomechaniesl Systems; Mar. 2000; vl. 9, No.1, p. 94-108, “Forced convection boiling ia microchannel heat sink", Jiang etal, Joumal of Micoelecromechanical Systems, Mar. 2001; vol. 10, No.1, p. 80-87. “Laminar ow through microchanoels used for microscale cooling systems iang et al, Proceedings of the Electronic “Technology Conference, EPEC; 1997; p. 119-122, “Fabrication of monolithic microcariels for IC chip cool- ing’, Joo et al, Proceedings of the IEEE Micro Elect “Mechanical Systems; 1995; p. 362-367. "Performance tes and analysis of silicon-based mictochso- tel heat sik", Kang et al, Proceediogs of SPIE—The International Society for Optical Enginecring 1999, vol 3995, p. 259-270 Micro heat exchangers consisting of pin arrays" Yin, tal, Journal of Electronic Packaging, Mar, 1996, vol 118, p. 31-57. “Measurements of Heat Transfer in Mictochannel Heat Sinks", Rahman, International Communications in Heat and Mass Transfer, May 2000, vol 27, No. 4, p. 495-506.US 6,942,018 B2 Page 8 “Eohancemeat of Ceteal Hest Flux From High Power Microclectonic Heat Sources ins Flow Chanae?”, Mudawar, etal, Joural of Electronic Packaging, Sep. 1990, vol. 132, p. 241-248, “Closed-Loop Eletioosmotie Microchannel Cooling Sys- tem for VLSI Circus, Jang, etal, prited in Journal of ‘MEMS, Jun. 2002. Liguid Flows in Microchannels 2002, Chapter 6, p. 1 0 6-38. “Fabrication sod characterization of elecokinetie micro pump", Zeng, et al, 2000 Inter Society Conference on ‘Thermal Phenomena, May 2000, . 31-38, Sharp et ab, CRC Press, “Theemal-bydcaulic characteristic of micro heat exchange rs", Wang, of al, American Society of Mechinical Engi- neers, Dyntmic Systems snd Contol Division, DSC, 1991, vol. 32 p. 331-339. “Blectrokinetic Generation of High Pressures Using Porous Microstructures’, Paul eta, Micro-otal analysis systems, 1998, Banff, Canada 1998, p. 49-52, * cited by examinerU.S. Patent Sep. 13, 2005 Sheet 1 of 30 US 6,942,018 B2 Flow Direbion Figure 1U.S. Patent Sep. 13, 2005 Sheet 2 of 30 US 6,942,018 B2 Figure 2U.S. Patent Sep. 13, 2005 Sheet 3 of 30 US 6,942,018 B2 250-2 Figures 34 and 3BU.S. Patent Sep. 13, 2005 Sheet 4 of 30 US 6,942,018 B2 220A-1 220A-I1 Figure 4US. Patent Sep. 13,2005 Sheet 5 of 30 US 6,942,018 B2 204-1 2041 220-2 Figure 6U.S. Patent Sep. 13, 2005 Sheet 6 of 30 US 6,942,018 B2 406 420 418 422 Figure 7 Figure 8US. Patent Sep. 13,2005 Sheet 7 of 30 US 6,942,018 B2 NZ 33 324 326 316 “4 342 310 S| 322 314 36 \S. 314 344 316 310 3%0 @ © Figure 9 Figure 10U.S. Patent Sep. 13, 2005 Sheet 8 of 30 US 6,942,018 B2US. Patent Sep. 13,2005 Sheet 9 of 30 US 6,942,018 B2 Figure 13 Figure 15US. Patent Sep. 13, 2005 Sheet 10 of 30 US 6,942,018 B2 314 lee 316 J Figure 17U.S. Patent Sep. 13, 2005 Sheet 11 of 30 US 6,942,018 B2 IC a Figure 19US. Patent Sep. 13,2005 Sheet 12 of 30 US 6,942,018 B2 ~)\ 110A noU.S. Patent Sep. 13, 2005 Sheet 13 of 30 US 6,942,018 B2 406, Flow DiredionU.S. Patent Sep. 13, 2005 Sheet 14 of 30 US 6,942,018 B2 302 a4 50 Figure 22 Figure 23U.S. Patent Sep. 13,2005 Sheet 15 of 30 US 6,942,018 B2 Figure 24 Figure 25U.S. Patent Sep. 13, 2005 Sheet 16 of 30 US 6,942,018 B2 Figure 26a and 266U.S. Patent Sep. 13, 2005 Sheet 17 of 30 US 6,942,018 B2 Figure 27 Figure 28U.S. Patent Sep. 13, 2005 Sheet 18 of 30 US 6,942,018 B2U.S. Patent Sep. 13,2005 Sheet 19 of 30 US 6,942,018 B2 2244 2244 Figure 30a and 30b.S. Patent Sep. 13,2005 Sheet 20 of 30 US 6,942,018 B2 Figure 33, Figure 35U.S. Patent Sep. 13,2005 Sheet 21 of 30 US 6,942,018 B2 Figure 37U.S. Patent Sep. 13, 2005 Sheet 22 of 30 US 6,942,018 B2 406 0 Figure 38U.S. Patent Sep. 13, 2005 Sheet 23 of 30 US 6,942,018 B2 Flow Direction aNU.S. Patent Sep. 13, 2005 Sheet 24 of 30 US 6,942,018 B2 Flow Direction Flow Direbtion 4 nonogononn 280 0 Figure 40US. Patent Sep. 13, 2005 Sheet 25 of 30 US 6,942,018 B2 ONUS. Patent Sep. 13, 2005 Sheet 26 of 30 US 6,942,018 B2 no 1390 g Figure 42 no — ~ 160 Flow Dit ue oreo zl aN oo 4 130 30 Figure 43,U.S. Patent Sep. 13,2005 Sheet 27 of 30 US 6,942,018 B2 7 Number of Channels 7 ‘Number of Channels 640 822 7 Ce ee ee ios be free =e ee 200 Sara denna e 10 mien w 20 mun F100 | 85) 10 enierin 7 . 5 an ex ~ °* ~~. P ee a0! o A” aaa ate —ea0 BO 1000 a ano 408660000000 Channel With fu] ‘Channel With um) Figure 44a and 446 —— feos W= 300M, 46.3 KPA, Ty pyg = 89.8 °C W= 700m, 31.9KP A, Typ = 85.4 °C — W = 300 - 700 um, 38.6 kPa, T,, ay, = 87.8 °C — meemmt W= 700 300 pm, 53.7 KPA, T, oq = 93.9 °C Figure 45 a r Poolw—= a 82) Seascura — Shsatire m 2100} >. ow srecion = az =: 1 of | 1 1 gg) tatoos W | csmene [wen | 40 0 6 10 18 20 2 {mm} Figure 46U.S. Patent Sep. 13, 2005 Sheet 28 of 30 US 6,942,018 B2 P r e s s u fl e @ 80) ~~ Maximum Temperature W_ |} —Average Temperature D 70 2 os 10 18 20 f Hotspot Location [mm] 4 Figure 47 a a r r 100) P 0B Teo Tro} —wimeut Fine T1701 —wihout Fins aA ‘P= 28.5 kPa 60 +, jx86e"o, 7, +080: 6 1 ‘ua" P68°C, Ty * 98.9°C ' ~-With Fins at inlet | 50} with Fins | 50 AP= 28.7 kPa a apams9is 8 gf Wh Fins at Both End 7 is Wer eee, e503 whol AP 36.1 kPa 30, 30) o § 10 18 20 oS 1 1520 zimm] 2 [mm] | | Figure 48a and 486U.S. Patent Sep. 13, 2005 Sheet 29 of 30 US 6,942,018 B2 220 2 mP,°e mai tts Microchannel Bottom Figure 49 | initial and average steady-state flowrate as a | funetion of borate buffer concentration 5 Oe §- .{ == iat owate 28 ~ : Beas mo + - average steady gee owrate = 4| | ° 5 10 18 | Butter concentration (mM) — —_ Figure 50U.S. Patent Sep. 13,2005 Sheet 30 of 30 US 6,942,018 B2 Maximum pressure and Flowrate vs pH for 16.5% porosity pum; i (06-22-01) Sone -=-Pmax" Compuaion Compe Pw Figure 52US 6,942,018 B2 1 ELECTROOSMOTIC MICROCHANNEL ‘COOLING SYSTEM. ‘This application i reited to, claims priority of and expressly incorporates by reference herein US. application No. 60/326,151 filed Sep. 28, 2001. The inventions eserbed hevein were supported in part by DARPA/Air Free Contract F33615.99-0-1482, FIELD OF THE INVENTION This invention relates generally to removal of best frm Dea generating devices, Specifically, this invention relates to removal of heat fiom intepated cireuits, optoelectronic Sevices, power cletonics, biotalyieal devices and any Sevices that disipale or absorb sulicient beat so. a8 {© Fequiespeciic means for hea removal BACKGROUND OF THE INVENTION tectonic systems, includag, for example, laptop, band- ned and desktop computers as well as cellphones operate through the use of input electrical power. Phese have the characteristic that some ofthe inpat power is converted to beat, and the beat generated is typically concentrated in a0 ‘identifiable area, such 35 an inegrated eituit chip or & elect board, Sich devices and predicts incorporate est Sinks, fans, hea-ppes, refrigeration, and cooling water 38 taeeded fo regulate their operating temperate within spe file ranges I is predicted that electronic devices curetly under evelopment will gnerate heat at (tal rates and spatial ‘eosiies exceeding the cooling capabilities of conventional heat sinking technology. For example technology targets set by the semicoaductor industry and summarized by the International Technology Roadmap for Semiconductors indent the need to remove as mich as 200W from the surfee of a microprocessor before the year 2007. The tends towards higher toll power and power density afe similarly extreme in the optial telecommunicatons indy, the power electronics industry, and elsewhere. Conventional heat siaks af simply incapable of removing the targeted powers and power desis within «Valume consistent with syslem design and market expectations This situation is exacerbated by targeted reductions of ‘otal sysiem volume, which diminish the volume and surface ea available for cooling devices. The interaction of these two trends (increasing head load and decreasing system volume) are reoognied as critical problem forthe future ‘ofthe semiconductor industry, and for other industries that ‘ely on heat-gonerating or absorbing devices. Conventionl techniques for removing heat from devices include a numberof well-esublished techmologies Heat Sinks goverally consis of metal plates with fins that tsansport eat fiom the deviee to the sumounding ir by natural ‘or forced convection. The beat sik fas serve (® incease the ates of contact between the deve andthe ai thereby increasing the eficiency ofthe heat transfer. Hest sinks of many materials, geometries, nd constuction hive been keown for mace tian 5D yeas Faos consisting of rotating blades driven by elctic ‘motors ean enhance the hea transfer between a heatsink and the sucroundingairby easing the ait cirulate around and ‘rough the heatsink with greater velocity than tat which resulis ftom oatual covection. Fans bave been used for ‘cooling systems for mere than 30 yeas, tegration of fase ‘With heatsinks for cooling of devices which generate lage 2 quantities of heat ave been developed by many inventors, Sd ae in wide use ‘Heat pipes consist of a hollow tube which incorporates wicking stucture, ands partially filled with guid: One end ‘ofthe eat pipe placed in contact wi he heal-generating ‘device, At ths ead of the heat pie, the ligud evaporates, and vapor tavels dow the hollow ceoter ofthe pipe the Other end. This end is placed into contact wilt & cold ‘medium, or shea sink, otis in conse with the surrounding lz, and eis to eool the vapor i the center ofthe tbe to the ‘ondeasatio temperature. This liquid, after condensation, is Transported back to the hot end of the tube by capillary forces within the wicking sircture. Heat pipes can offer ‘sigifcaiy better beat conduction than soli metal rods of te same dimension, and are widely used in many appi- cations. Heat pipes are presortly used for heat removal in lecuoaie products, spaceoraf and a variety of ober appli ‘ations where hea! generation in compact geomettes is of interest. Heat pipes may be formed in many peometsic sictres, and may be integrated nto the device package for lcient heat anspor US. Pat No. (5,216,580), or may be ‘used to deliver heat some distane away through a flexible coupling US, Pat. No, (5,560,423). Vapor chambers closely resembles a heat pipe in operating principe and dimensions, but generally has & rectangular (rather than tubul) ross: stctional shape and cen involve varying geometial place ‘ments of the wicking structure, Toth bet pipes and Vapor chambers are subject oth same basiephysidl ini forthe peak powers The longer the separation between the heat Source ad the beat sink, and the smaller the cross sectional srea, the smaller te total heat power that can be removed before these devices reach the capillary limit, or dy-out, condition, Active cooling ofa device va a vapor-compression cyele ‘or by themocletic or ober solid-state cooing devies is used in some high-performance thermal control applications, or where regulation st low temperatures is required. In ese applications, tbe heat from the device is transprted to the rejection surface, and significant excess heat isaded due tothe limited thermedynamic efficiency of the cooling mechanism. The rejection surface must gener ally be cooled by one of the ollie means described herein, \Vapor-Compression refigeration eyeles have been used in many applications ranging fom home air-conditioning and Jetchenrefegeration to spacecraft and cryogenic systems for many years. Cooling water i used in situations where lage quanies of beat are generated, and the otter methods described herein are unable fo eject the hea tothe surrounding i. In this case, a continuous supply of cool water i equited, snd this cool water is passed around or troggh the device or chinnels ian attached siete. Thereafter, the warmer water is returned 10 the waste water system, a miniaturized applications employing cooling water techniques exist whieh address the problem of ministurzed mieroebanoel cooling systems, miniaturized, closed-loop cooling systems, and systems which rely on ative pumping fof Duis to achieve cooling. Microchannel bet exchangers ‘wete orginally explored by Tuckerman et al. (US. Pat. No. 4450472, US. Pal, No. 4573067) in the early 1980s. ‘These devices contained sirsight, uniform-cros-section mierotabricated channels within a lion subst, throug ‘which liquid coolant was passed Subsequent pacts fol- lowed the ecginal work of Tuckerman snd Pease (US. Pt No. 4450,472), including descriptions of microchannel fab- riction methods, tachment methods, and specific matei- als and designs for specific apliatonsUS 6,942,018 B2 3 Microchanoel beat sik design 1 achieve higher heat ‘eansferenelicint or improved temperature uniformity has also been explored. Philips (US. Pat. No. 4894,709) Seseribed liquid microchannel cooling with a guard eager Structure to improve temperature uniformity in the chip Frieser (US. Pat. No. 4,312,012) described modifications of ‘he surface ofthe michael o improve mca Doing and the heat wansfercooffiient. Swift (U.S, Pat, No. 4516, 632) apd Walpole (US. Pat. No. 5,099,910) described chanols with alleroting low directions to improve temn- perature uniformity. Lomolino (U.S, Pal, No, 5827174) teed a two-luid mature to control the effective beat espace ty of he coolant and rrbulence over a targeted temperate range. Cosed-loop cooling systems employing microchannels have also been an active area of research in rvenl years, Including the deseripion by Hamsllon (U.S. Pat. No. 5901, (7) of a clasedloop cooling system in which Mui sre ‘passed through microchannels attached 10 the iategyated ict, nd a magnetic pump generates the pressure. Further, Davis (US. Pat No 5,703,536) describes the use ofa closed Joop Hudic cooling system for cooling of high-power RE ‘There has been extensive research nto the developmcat ‘of micropumps. These reseatch effort include pump based ‘on oscillating piezoelectric membranes, peristaltic pups, electronyodynamie pumps, and others. These pumps, 10 Gate, appear to be incapable of generating the prescure andl flow necessary fr application to removal ohh beat flux trom high-power devices. The phenomenon of clecro-osmosis has been known since the work of FF. Reuss in 1809. A simple description fot this phenomenon shat guid flow i induced om a region of net charge that develops athe liquidwall interface. The ‘magnitude of the force proportional the applied electric ‘eld snd the quantity ofthe changed species availabe in his region af net charge Larger ow rates can be aebieved for systems with large cross-sectional areas. Large pressure ‘Beneration requires strictures with very high surace-0- olume ratio. Miniature pumps based on the phenomenon of Electeo- Osmasis (e, Electroosmatic pum) were originally devel- ‘oped By Thecuwes (U.S. Pat No. 3928/26), in which 2 porous ceramic structure was wed to provide a mullite of| ‘mieron-sized pathways with charged Surface layers. Theed- wes describes the importance of selecting pumping stuc- tures which feature high porosity, igh ‘lectmcsmotic mobility fora given working ud, small diameter pores, aad Aiscuses the: possibility of the use of quartz or glass ‘ceramics, possibly comprised of beads, snd porois polymer ‘matrices. The working Mid in the Theeuwes pump Was suggested fo havea high dielectric constant, low viseosiy, tnd low electrical conductivity. Example liguids thatthe Theeuwes purop used inclde deionized water, ebyl-aleobol and aleohol-water mixtures, and maay organic solutions, ‘With these materials and solutions, lw rats in excess of | mLjmin and. pressures execeding 1 Atmosphere were reposted, Despite the many diferent and diverse cooling systems and techniques described above, ther exists» ned for an improved closed-loop, uidic cooling systems and tech. ‘iques for high power applications having the capability of being implemented ins ministurized environment, In addition, there exists a need for an improved miniature Auidic cooling sytem having feedback-contolled tempers- ture regulation of devices that facilitates, for example, 4 hotspot cooling by way of, for example, active regulation of the temperature of the integrated cicait device through electrical eoatol of the Dow tbrough the pump. Such min- ‘autre fluidic cooling system may uilize multiple cooling loops (in conjunction with multiple pumps) to allow inde= pendent regulation of the special and temporal characteris- ties of the device tempecatire profiles. “Moceover, there exists need for miniture pump tt i ‘capable of generating the high pressure (Lor example, pres Ste greater than 10 PSI) aador high How (for example, a Flow cate greater than 5 mln) that ae necessary forthe removal of the predicted high het fux (fr example, power ‘reat: than 100W). Such a pump should overcome of dress the shortcomings of the coaventions! pumps, for ‘example # pump configuration for use in a closed-loop systems tbat adresses practical issues involving evolved sgscs (for example, by way of recapture) of deposited materials. These sues lend to be prominent in closed-loop fuldic cooling systems employing pumps. SUMMARY OF THE INVENTION Ta one aspect, the present invention advantageously ro- vies for the removal of heat from heat generating devices and transporng oa beat rejection structure through the use ofa fividie oop with a pump. Some of the many specific ‘vantages that ate obtainable can be taken singulaly o ‘rious combinations. The present invention hs the capability of removing high heat foxes and high toil power from devices ‘The preset invention also may minimize the volume and weigh ofthe elements of the cooling system that mst be stiached to the beat generating device, a well s the weight ofthe pumps and heat exchangers. The present invention can ako simulate the device tem- perature distibution resulting from the operation of the device logetber with the micro beat exchanger. The Sime Tati determines the thermal resistance for beat transfer to micro heat exchanger for given flow rate and sel of ‘microchannel configurations. ‘The present invention also optimizes the spe and dis ‘elbution of microchannes in the micro heat exchanger and ‘minimize spatial and temporal temperature variations oa the ‘device, even considering large spatial and temporal changes: inthe heat fux due 1 variations in the operation of the device, ‘The present invention aso as the capabiliy of minimiz- ing the temperatre variations in the device, even inthe presence of large nomtoifrmiies in beat Hux, which can have a stongly detrimental effect on ils performance and reliability. This is achieved through the tailoring of meal geometry, and internal features ofthe microcban- nel beat exchanger. Optimal microchangel design. is Achieved using, simulation capability of the present invention, claimed below The present invention provides flexibly in the locaton ofthe beat ejection elements, fo particular enabling a large Separation from the location of the heat yenerating device ‘Aso enabled ia lage arca fr eajecton, which reduces the thermal resistance of the rejection and of the system a8 8 whole. Apparatus and methods acording tthe present invention preferably ullize electoosmetic pumps that are capable of ‘Benerating igh pressure and flow without moving mechani= fal parts ad the associated generation of unaccepable lectrical and acoustic noise, as well as the astocatedUS 6,942,018 B2 s reduction in relibiliy, These electroosmotic pumps are preferably fabricated ‘with materials and sivctures that Improve performance, eficiency, and reduce weight and ‘manuatiring cost relative to preseily availale- mito: pumps. These electroosmotic pumps also preferably allow for recapture of evolved gases and deposited materials, Which may prove for long-term closed-loop operation. Appacatus and methods scoring to the present invention also allow active egulation of he temperate of he device Ibrough electrical contol of the ow trough the pump and an utilize multiple cooling loops to allow independent ‘egulation ofthe special and temporal characterises of the evice temperature profiles BRIEF DESCRIPTION OF THE DRAWINGS ‘These and otber advantages and aspects of the present Javestion will become appareat and more readily appreci- ated from the following detailed description of tbe presently prefered exemplary embodiments of the vention taken in, conjunction with the accompanying deewings, of which FIG. 1 illustrates an embodiment ofa closed 4oop cooling system, FIG. pump. FIGS. 34 and 38 itustate top and eros sections views, respectively of an embodiment ofa mierochanael structure FIGS. 4 and 5 ilutat cer embodiments of mictochan el srvcares, FIGS. 6 and 7 ilusrate embodiments of a macro heat exchanger, FIG. 8 ilhsteates an apparatus used in forming sintered disks. FIGS. 9A and 9B ilstrate an electroosmotic pump using «sintered glas fc porous structure according oan embodi> ‘ment of the present invention FIGS. 10 and 11 ilstate other embodiments of an electroosmotic pum. FIG. 12 illustrates a side view of an electroosmotic pump acco (0 the present ivention and positioning of tha ‘Shannes on all sides of the porous siractre. FIGS. 13 and 14 iluscate embodiments of membranes used to cover 2 caalti recombinet FIG. 18 ilusats sn embodiment of x dual electroos: smotic pump, FIG. 16 illustrates the usage of « eater with a eaalytic recombince, FIG. 17 illustrates an embodiment of « microfabricated slectroosmotic pump HIG. I8ilusetes an embodiment of am integrated micro- cana! structure and electroosmotic pump. FIGS, 19 and 20 illusate other embodiments ofa lose Joop cooling system. FIGS. 21 and 22 illustrate other embodiments of an ‘opes-oop cooling system FIG. 23 ilusicates another embodiment of an elcioos- roti pump. FIG. 24 usates another embodiment of a microchannel 2 illusuates aa embodiment of an electroosmotic FIG. 25 ilustates an embodiment using + phcality of microchannel stuctures in 2 3D device stack, FIGS. 26 and 27 illustrate ater embodiment of «micro- channel siveture that contains openings for other acces 0 fan attached heat generating device, 6 FIG. 28 illustrates an embodiment of @ portion of & microchannel stricture. IG. 29 illustrates an embodiment of portion of a rierochanne stricture cozsiing a paral blocking sirve- ‘ure. FIGS. 30A and 30B illustrates top and cross sectional views of anolher embodiment of « microchannel structre containing multiple cooling layers, FIGS, 31 and 32 ilusrate embodiments of microchannels using mulhiple Nid injection points betwoen two chambers FIGS, 33-86 illsiene Zormation of microchsanels in various layer FIGS. 36-37 illustrate formation of partly inthe device being evoked FIG. 38 iustates an embodiment of a cooling system that uses pressure, curent and temperature Sensor. FIG. 39 thsrates an embodiment in which the tempera ture contro system is part ofthe device being cooled. FIG. 40 illustrates an embodiment in which the miero- banal structure and temperature contrl system are ile- brted IG, 4 illsrates an embodiment in which te tempera ‘ure conto system is attached othe microchannel structure FIGS. 42 aod 49 illsiate embodiments using 2 heat spreader FIGS. 444 and 448 are chats illustrating the dependence otavecige device emperatire and presse drop an mictor ‘channel dimensions FIG. 45 ilustsies the effect of various channel geom- ‘ties om average wall empeature and pressure drop. FIG. 46 iustates the effect of nonuniform heat genera- tion on temperature and pressure dro, IG. 47 ilustrats te effect of hotspot location on tem perature and pressive drop, FIGS. 484 and 48B illustrate the effect of fins on wall temperature uniformity and pressure drop. FIG. 49 illustrates sa embodiment of a portion of a ‘microchannel structure consning bubble ntcleation sites. FIG. $0 illustrates a table ilustcting flowrates as a function of the Mud being use FIG, $1 illstrates a table illsirating foweates as a function of the pH ofthe Mid being Wed FIG. $2 iustates # functional lowchart luseating a ‘modeling process for microchannels according the preseat ierochannels atleast DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS ‘The present invention provides, in one aspect, «compact cooling system for electoniespsiems based on micro best ‘exchangers, specifically micochannels machined in silicon formeals, and compact electroosmotic pumps. The system is hermeically-closed and may be acrged ina modular fashion, enabling efficient het eemoval irom x device, and ltanspot fo & convenient macro heat exchanger. The micro heat exchangers and eletoosmolie pimps as described are extremely compact and powerficient, suc that the total system is far smaller apd libler than beat pipes, vapor camer, and fiaray heat sinks usally used for emov- ‘ng compirable power from miniature devices. The sytem is interconnected by flexible tubing. and therefore ofers advantages indesign fexiiliy, Certain embodiments ofthe system are generally referred loathe loop system since inUS 6,942,018 B2 7 ‘tspreferred form the various components establish closed loop trough which the liquid that provides foe thermal energy taser tavels ‘Various figues show different aspects of the system, and, where appropriate, reference numerals Mustang Like com) ponent in dierent Figures are labeled similarly. Is “understood that various combinations of components other than those specially shown are contemplated. Funkec, separate componcas, such as the microheat exchanger, mmactobeat exchanger, and pumps are at imes described with ‘reference a particular system embodiment, snd while sich eseription i accurate, it is understood that these ‘components, with the variants described, ae independently Significant and have patentable features tht ae described Sparse and apart from the system in which they a ‘described FIG. 1 shows sn embodiment of the closed-loop cooling system 100, which includes 2 micro heat exchanger 200 attached tothe heat producing device 50 (shown as a0 integrated cireuit attached f0 a ctcut board 4 through electrical connections $2, but which eaud so be a ciciit board or other beat producing device), a miniature pump 300 forthe working Mud, 2 macro heat exchanger 400 for rejecting the beat from the electronic system 10 the favironment, and 2 controller $00 for the pump input volage based onthe temperature measured a the micro beat ‘exchuaget 200, The individual system components are cach ‘esenbed in preter deal, Micro Heat Exchanger. Micro heat exchanger 200 achieves vecy low thermal resistance in. compact cross section (thickness less than Lm). Tt attaches dircly to the Sutfaco ofthe device using thermal attach materials such as sllverfiled epoxy or solders. The design of ceive uses ‘chanaels with dimensions inthe ese 20-500 micrometers (icrochanals, a= deserined further hereinafter). Signi fant aspocs of this miero heat exchanger 200 ace separate groups of channels with integrated thermometers. The spi= tial dstbution, dimensions, and ow directions are tilored to the varying hest Taxes Gocurring at dierent functional locations onthe chip or view $0. In addon, the geometry and arrangement ofthese microchannel or mcroels canbe ‘optimized to enable uniformity of temperature across the device 80, orto allow for independent contr of temperate in dierent regions of the device $0, as discussed below, ‘The mio heat exchanger 200 can be fabricated from 9 variety of materials, including, for example, thio metal sheets, silicon and glass layers, ceramics, and earboo-iber ‘composites. Materials for this sruture ate 10 be chosen to tect requirements for thermal condition fom the device 50 to the fuid, and to achieve high reliably of the attachment fo the device $0 and for log-term operation in contact with the fuids inthe loop. The need for reliable altachment results ina dsire to math he thermal expansion collcint 10 that of the device $0. Since many of the devices 80 under consideration are fabricated from silicon, fabrication of the micro heat exchanger 200 from silicon may be advantageous In addin, silicon fabcsion meth Cdologies allow precision contol ofthe shape aad acange ment of the miefochannels, and enables integration of tem Detulure sensors pressure sensor, and coneol eruie ilo the microchannel structure. Alleratvely, metal fabrication methods are capable of approaching the required dimen sional coatol, sd inceraia circumstances offer sdvaotapes ‘over silicon, such as low-cos! fabrication, high-elablity sealing techoology, and compatibility with the thermal Fequirements of soie applications. An advantage ofthis jnvention is that there i considerable Aexiilty in the 8 Selection of the materials and geometries ofthe mictoca- rel structures. which, in part and. under certain circumstances, i based on the capabilities of the elecroce- ‘otic pumps 300. Eleciresmotic Pump 300, Ther are many possible kinds of ‘pumps that may be implemecied and operated in the system described herein. Preferably, however, thee is used » novel electroosmotic pump 300 (also refered to as “EO pump 300" or simply “pump 300”) that is capable of producing high pressure and high How rates a its ouput, Electrons: mote pumps 300 use electric fields to propel charges i the Viinily ofa ligui-solid interface, and are generally tailored to have avery high rato of surface to volume in te ative pumping element. Pumps 300 can be mace using 2 very wide varity of fabrication methods, because the basic lectrocbemistry of the charged layer and the resulting ectroasmesis known to eccur for many material surfaces ‘when brought into contaet wih water or agucoussautions, The nature of the interaction between 4 particle sohtion and a particular surface will reslt in variations in the ‘mount of charged soltin that i avaiable to be pulled by ‘he applied electric field, Asa rest the performance of te EO pump 300 is dependent on this surface itersction, and itmay be useful to choose surfaces and sotins that eeate 4 sttong electroosmotic pumping effet. High pressure and flow rales for pumps 300 may result from, for example, using sintered microporous mei sch ss borsilicate fits, polymer fits, and packed beds of glass microparticles. Aerogels, glass fer composites, nanostnic ‘ured media, porous silica, microchannel plate structure, ther porous ceramic materials, and many other materials hich offer high surfacevolume ratios and chemically tive sucfees may be used 10 fabricate electoosmotic pumps 300. Is also possible to use lithographic methods to iscely fabricate structures wih high surfs volume ratio, Silicon microfabricated pumping structures can bave the advantage of being integrated with other micro beat Exchanger 200 elements, including the sensors and the ‘microchansel structures, and contol electronics sich 25 cxontoller $00, all within 2 single module, 36 described further herein Macro heat exchanger 400, The macro-het exchanger 400 ‘offers very low thertal resistance between the closed Loop system andthe environment. Te macro heat exchanger 400 may be comprised of many conventional heat rejection devices that implement maay difereat methods ad serves to provide rejection to the environment at low thermal resistance. For example, the macto-het exchanger 400 may Include a meal, fan-ooled het sink, of dedicated portion ofthe case ofthe device enclosure or package tis empha sized tha the cooling lop allows enormous design exbil ty forthe macro beat exchanger 400 hectuse, ia certain implementations, the macto beat exchanger 400 may be placed far away fom the device $0, and need not be Physically compatible with the requirements ofthe region eat the device $0 Controller $00. The costcoller S00 takes stendard input voliages available from the clectoni system ofthe device ‘50 and converts them to the operaling voltages required by the electocsmotie pump 300, The conteller S00 slso mo tors the temperature, pressure, and flow rate sensors inte arated within the micro heat exchange: 200, provides appro rate driving voltages toa power supply associated with the Pump 300 to establish the appeopitte cient between the vod 314 and the cathode 316 ofeach electroosmotic pump 300 to cause the envionment that will propel the quid phase of the working uid within the pump 300, ForUS 6,942,018 B2 9 large-area devices $0 (exceeding 2 cm), designs using ‘lip sensors and elecioosmolic pumps 300 may provide cooling at varying rates to microchansels grouped near Aifere regions of the device $0, Tn alti Wo variations in the methods for fabrication of the materials and structures of the components descried shove, inluding pumps 30, the preseat invention describes Jn another aspect unique operational mebods One unavoidable aspect of the use of electoasmotic pumping methods i the electrochemistry ofthe itersction between tbe Mud andthe elettodes. The exchange of charge A this interface causes clectolysis, and will Tead 10 the decomposition of some ofthe constituent ofthe Hui. To the ase of Water, electrolysis esl in the cootnuons forma tion of H2 at one electrode and 02 atthe otber electrode, ‘One aspect of this iaventin, therefore, 3s. deseribed fuer heteinafer, isthe incorporation of s estat recom bine that consists af a eaalyst compased ofa hydrophobic Platiaum catalyst 2 and 02 lo recombined to form watet at this catalyst and the hydrophobic nature ofthis surface ‘Causes the water to bead up and fall from the catalyst surface tnd return to the uid. Another metbod by shih liquid is kept away from te catalyst surface is by use ofthe hea of reaction asocited withthe oxidation of bydogen, The ‘recombination of hydrogen and oxygen nto wate allows the implemeatation of the system 100 a5 described herein 35 8 closed, hermetically sealed system. While many diferent featalyst materials may work, it has been found that 4 hydrophobic platinum eatalys, described futer herein, has ‘worked best a the preseat time (Other aspects ofthe invention desribed herein are the design of the inlet and outlet, the electode design, ad the position of the recombination chamber such tat oxygen and hydrogen bubbles canbe combined ina single, smal volume chamber. FIG. 2iluseatsin Further detail the design ofthe pump 300, whieh is formed by sealing « poxous structure S10 between the eatbode sind anode halves S12A and 3122, respectively, ofan enclosure that forms the pumping charm. er 312, Anode 314 and eatbode 316, vis connections with respective electodes 313. and 318 ‘re inserted ino the pumping chamber 312 through the walls 318 of the nelasure, making electrical contact with tbe working Buid inside the pump 300. The walls 318 ean be made, for cxample, of an insulating material, such as glass acrylic, ‘etamic or Si02-coated silicon, and formed using 8 1W0 piece structure containing walls 318A and 3I8B, which are Joined, suchas shown atthe boundary af te porous sinc: ture 300, and sealed using seals 320, which may be, for example, an adhesive, a gasket, or by fusing or welding of the two pieces. Flu Hows from the inlet 322, is pulled through the porous stricture 300 within the pumping cham ber 312 by electoosmotie forces, and exits through the cullet 324: Oxygen generated atthe anode 314 i rapped ‘witha the chamber portion 312B, and kydrogen generated at the eathode 316 passes through ihe loop and retums to the pnp 300, where i enters the extalytic recombine 326 with the residual oxygen, and is recombined to form water 4 returzed 10 the pumping chamber 312. ‘Oxygen bubbles generated at the upstream electrode (es0de314) are driven into the recombination chamber by pressure (ie, buoyancy) forces. Hydrogen bubbles flow ‘rough the closed-loop system (subject to pressure, surface tension, and visoous frees) and, upam entering the alt 322 ofthe pump 300 ate sls driven up into the recombination ‘hamber 312 by buoyancy eventually into the mesh or pellet ‘lal tecombiner 326, whore the ydrogenrecombites to form water as meationed above 10 Daring operation of the cooling loop, continuous evapo: tation ofthe Mud in the evaporation gion ean res he ‘ccurmulaton of residues within the evaporator or elsewhere in the cooling oop. These residues may include electolyes and sais that precipitate from the solution during the evaporation, or any ater dissolved sols, Some of these ‘ectoltes may bave been deliberately added because of their aiity to preseve the properties of the surfaces of the clectodes and the porous structures of the pump. The long-term sceumulstion of deposited resides can be avoided by periodically causing the pump 10 operate at ‘maximum Dow for brief periods. When the How is inreased 'o the maximum, the liguid phase ills the entre cooling loop, allowing the deposited materials o be dissolved back inte solution, thereby eecaparing the accumulated residue This process is called a wasbthru, aad depends on the feature of the pump that allows api adjustment of flow rte by increase ofthe poteatildiference applied to the elec- trodes of the pump. By performing a wssh-theu operation ‘with the pump 300 for shor time (eg. 1 sae every 1000 seconds) deposited resis in the caoling loop may be recapuzed into the uid. Tis aciltates long-term operation of the system 100. The use of eleckolyts allows is critical lo maintain long-erm performance ofthe pump 300 10 be maintined (by sabilizng surface chemistry) and to reduce the voliage drop between the electrodes apd the pump stricture (i he vollage deop asociaed with conducting ions trom the lectose srlace, trough the intervening electra, and 0 the inlet pores ofthe pumping structure), ‘Other unigue operational aspects ofthe system 100 wil be furher described, before a further description of the sem 100 is provided Pump Conte! foe Tatsieat Chip Temperate Uniformity Tegrtion of thermometers inthe micro heat exchanger 200 and feedback though the contoer $00 allows the Syste 100 to miniize emporal temperature variations on the device 60, even in the prescce of transient sues in the heating load atthe device 80. For the case of silicon beat ‘exchangers, the thermometers af integrated into the heat ‘exchanger using, for example, doped silicon thermistors, ‘Goues, or patterned metal electrcal-wesstance bridges. The ‘controller $00 provides a signal to conto a power supply associated with each elecicoosmoti pump 300 to conto the current that exists Between the anode 314 and the cathode 316 based on the measured temperatures tthe mizio best exchanger 200. In the ease of «sytem 100 employing more ‘han one pump 30, itis posible oe the controler S00 and an appropiate pump 3001 respond separately to tempera~ ture surges on diferent regions of the device $0. This functionality takes advantage of an important characteristic of the elements ofthe system 100—the presse and fw through the pumps 300 responds o changes in the applied woliage oo timescales ster than 1 mS, and the specif hat ‘ofthe micro heat exchangers 200i very low. As result the response of the system 100 10 changes ia beat Load or 10 Semana for changes in operational temperature is Test ‘enough to enable dynamic temperate coatol with band- ‘Width approaching I Hz. This Teatue is a signifietnt Improvement over existing miniature device temperate contol techaologies such as heat pipes, cooling fins (andlor fans) and phase change material approaches, which use ‘methods that are incapable of adjustable eat removal based ‘on electrical signal input (passive beat sinks, beat pipes, phase-change materials), or would have very siow temporal Fesponse because of lage heat capacities and margiaal bility to modify the heat transfer coeiciens (fas)US 6,942,018 B2 TT Micro Heat Exchaoger Design to Minimize Chip Tempers. ture and Temperature Gradients The micro Beat exchanger 200 cnubles design innovations sch as init temperate sensing to minimize the maxi mum and average chip temperature for given flowrate, ‘even considering large spatial variations of the heat fix from tbe device $0, These inncvatio opportunities include the integration of doped silicon thermistos, which allow the controller $00 0 respond o local changes in empersare, 38 willbe deseribedtereinafter Alo, the micro heat exchanger 200 provides the opportunity 10 tailor the channel dimen= sions and spatial density to vary the effective, thermal tesislnce across tbe area of the device $0, thereby mini= ‘mizing Lemperature padientsrealting from dieing heat ‘axes: Design and optimization of microchannel in silicon can be achieved using a oae-dimensional model for wo- ‘phase boiling ow in channels, also further described bere Tnafter. The effective channel dimensions inthe regions of greatest het flux are reduced Using local high-surface area Snucures, suchas ntenal ins, or regions with smaller cress Sectional areas $0, 10 augment the local thermal condve- ‘ance. Funbermor, ibe Bow direction and location of the ‘eon of high heat ux with respect othe Bud inlet can be ‘sed to minimize the local temperature. Since the pressure decreases continuously 25 the fluid moves though the channels, and the temperatare ofthe two-phase guid-vapor ‘mixture depends uniquely on pressure, inreasing the sepa ratioa between the Guid inlet and te high heat fax rion un strongly reduce its temperature. Groups of channels owing in opposite direction on te device 80 can also be advantageously used to achieve greater temperature unifoe The development of optimal design methodologies based fon detailed thermal modeling allows the design of micro channel geomeirts that are customized to match the heat strbuion on patcula device 50. This aspect of the invention allows the total performance ofthe system 100 be optiized with respect to a specific device characteris, “This aspect ofthe vention is futher enabled bythe ability to operate multiple independent cooling loops through + single micro heat exchanger 200, Th design and fabsication Capabilities for silicon fabrication would allow mulple fuldic manifolds to be eo-keated ona single substrate and to be operated simultencousl 5045 0 schiewe independent thermal regulation of dierent region ofthe device 0 ‘Workigg Fluid Design and Optimization forthe Loop Sys “Tupeted devi $0 temperature is fuer reached using tailored working fd chemistries snd operating pressures. Boat he chemistry and operting presure iflunce the boiling temperature, which determines the device $0 tem perature at which ihe system 100 achieves the Jowest thermal resistance. These design and optimization strategies are signiicant in that they also affect the operation of the catalytic recombiner 326 illustrated in T1G, 2, which ‘equies minimum partial pressures of hydrogen and oxygen in eer to operate efficiently lv chemistries that can be used include, but ar not Timited to, deionized water (DI), aqueous buter solutions, ‘onanic liquids (¢g, acetonitrile and methanol), and mixers Of organics and buifers for tho working Hid ofthe pump 300, Optimized mixtures ofthe working Mids that achieve the required beat transfer needs and yet optimize pump performance and relisbility. Key isues in the optimization ‘tthe working Bud eniatue include long-term pH coatol of ‘working uid (which dreily allets pump surface charge Gensity and therefore pump pressure and low rate 12 performance). Although pute De-lonied water often oars the best thermodyaumie efficiency for beat moval, the operation of the system may impose additional requite- ments. For example, highllow rate performance of the ‘pump may be achieved by increasing the conductivity ofthe Mid beyond what i available from DI water, for example by tdding Dufer to tho water. In addition, additives nthe aqueous solution can help to prserve the surface charac- teristics ofthe electrodes and the porous pumping structure. For example, iaereases inthe conductivity ofthe working. Tid bas the negative cllect of increasing the Joule best issipation ofthe pump 300, but also has the benelcial lect fof decreasing the thickness ofthe ayer of charged fas inthe solution inthe porous pumping sirctures, which increases the pressure and flow provided by the pump. In aditon, increases in the conductivity ofthe Mud serve to edie the potealial drop from the electrodes 10 the surfaces of the Porous pumping structure. Tis is impocant, because oaly ‘he potenlialdilerence across the sirfaces of the pars structure contribute to pumping setion.Poteatial drop from the anode to one surface and from the other surface 0 the cutbode ace wasted Before further describing in detail te loop system 100, cesta of the advantages that it provides will mectioned, These advantages allow the system 100 to compete wih conventional beat dissipation systems a8 mentioned above, Including beat pipe and vapor chamber technology in lap- tops and hand-held devices nd traditions metal fn-arey heat sinks used in desktop computers. Due. 10 major improvements including the increased peak heat load, the minimal volume at the device §0, and the possibility for ttansent snd spatial reductions of temperate viralons, the various aspects of the loop system 100 described herein ‘will aso entble continued scaling and performance improvements of electron sysems. Much Larger Peak Heat Loads for Given Device Volume ‘significant advantage of the sytem 100 according othe prescot invention is the ability to handle much higher heating loads than conventional devices wsing «much sinallet volume. Because the cooing lop is pumped, the pressure drop and flowrate of x given loop system 100 Gesign can be tailored to the targeted beating load between '5'W (hand held) and 1 KW (paale-proceswor desks) While an electroosmotic pump 300, i used, adds a small ditional volume othe lop systezn 100, each pump 300 is extremely compact (smaller than any competing pump) and ollers tremendous performance benefits. Spucieally, the pumping of the liquid phase allows the system 100 to Femove total eating posters Tar in excess of thse handled by heat pipes and vapor chambers of comparable volume: ‘The additional power required by the pump 300 is small ‘compared to the power required by the device $0 and is Therefore not a significant burden for the bllry life where the application isa ponable electronic system. Minimal Volume at Chip Backside From be perspective of system misiaturization and mui chip integration, the micwo heat exchanger 200, n particular ‘microchannel heatsinks wit thickness below I millimeter, has a temendows advantage because it oocupies less space specifically atthe backside ofthe device 80 than conven tonal techaigues. Ths is sigan, particulary since the semiconductor industry is targeting ineretsed integration of multiple chips into a single device SO package, for which ‘minimal separation betwecn chips i eiical for redcing signal delays. For single-chip sysems, the minimal volume of the micro heat exchanger 200 at the chip backside is critica! because tenses miniaturization of the dimensionsUS 6,942,018 B2 13 case of electronic system. For a metal fin-ary beat the design can accommedale 40 enormous volume tached divelly 10 the device 50 backside, This lige volume requirement may prevent dense. packaging. of circuits, especially for applications where placement of a ‘nulitde of ercuits within the produc is require, such a5. servers. In other applications, Such as laptop computers, ‘hore is very limited space shove the microprocessor, in array heat sinks sutuble for power in excess of SOW are ‘feat to accommodate, Conventional designs ctanot accommodate sich volumes, which inkbis integration of ‘ipl chips closely ino a single package and impedes sjsiem miniaturization, particularly for compact deskiop computers Design Flexibility “The prefered pump 300 enables design flexibility, par ‘ieuany since it allows beat Wo be rejected over a relatively Jame atea fa sway Trom the device 50, atached only using fluidic tubes, ad can be disposed in a variety of locations, depending upon the system being implemented. For cxample, while FIG. 1 illustrates 3 elosed-lop system ia which the pump 300 pumps fluid into the mic heat txchanger 200, pump 300 could pump Bud into the macro heat exchanger 400 instead, or in ation tothe location Aluseated in FIG. 1 ‘Transicot and Localized Response to On- ture ofthe fd moving through that channel, and therefore Sschiove appeoximateconirol over temperature in the region upstream or downsitem along that channel. Fialy, the Separation between the channel andthe Iemperature sensor bs am elfoct onthe imei tales forthe sensor fo respon 2 change in fd low, and can allow fast slow feedback contol of the temperature inthis Location in the system, “Thus, sensors 260-4 and 250-5 are shown furtber from the chantel 220 and claser io device 8, whereas sensor 280-6 i illstrated further fom both the channe! 220 and the device $0. Thus, sensors 280-4 and 250-5 placed at the bonding interface to the device 80 are the most sensitive 10 the lea heating souees, and will respond mast quickly 10, changes i emperature due to changes in beat dissipation in the device $0, whereas sensor 280-6 will provide an in cation of temperature change on a more global evel over periods of time that are pester. Since one objective ofthis invention is w provide ative feedback-contolled cooling of the device, the use of temperature, pressure andlor flow sensors te provide input signals to the contoler $00 is important. The measured parameter (for example, temperature) is compared 1 the esied parameter (for example, temperature), andthe dif ferences ate analyzed by the Toclback contol slgoithn 10 produce changes in the pump contol volages. As an Sxample, if the temperature at specie location in the evice 80 excoeds the desied regulation temperature, the controller S00 wil increase the voltage fo the pump 300 that provides fuid flow to » channel neat to the thermometer, ‘hereby increasing the heat ansfer tothe fui in that egion, and cooling tht region of the device $0, Simple feedback ontol applies volage wo the ponaps 300 that are propor: tional othe dieenoe between desied and metsured tem- petaure. Ths is often refered 1 as proportional control A. Aissdvantage of simple proportional cootrl is that lige changes inthe conta! output (pump voiage) can oaly be generated after large eros in temperature are produced. More advanced contol strategies atempt to derive infor- ‘ation from the temperature the ate change i temperature,US 6,942,018 B2 7 sand pechaps from more than singe thermometer in order to produce a conto signal that regulates temperatures moce accurately, Such controllers S00 ace easier to implement ‘with emperature signals recorded at several Ioeatons ed asnear be device 80, ner the microchanvel 220, and at tbe top surfce of the microbe exchanger 200, as describe above. These temperature measurements from disparate locations relative to the device $0 andthe microchannels 200 provide information to the conollr S00 at diferent fates, and with diflerent sensitivities to diferent local influences, leading to an overall cotrl strategy that ollers such bece accuracy and sibility in the face of changes in heat input. Therefore, providing input (for example, thermal) fom several diferent locations within the micro heat exchanger 200 is preferable ‘The thickness of layers, Such as layers 210 2nd 214, is aso 4 consideration. These layers are generally no thinner than (0.1 mm, and may be as thick as several mm, depending on the material and manufuetring process. For example, if these layers ae fabricated from silicon or glass wafers, the typical thickness of such wafers are near 0.5mm, although they may be thinned 1 0.1 men to allow the total thickness ofthe microheat exchanger tobe minimized. Ifthe layers are fabricated from ceramics, the layer tickness i typically 1 1mm or greater, Ibe layers are fabricated from metals, near ‘or greater than 1 mm are typical In many applications, the Uevice tobe cooled is silicon integrated cite so there ar some important sdvaniages 4 microheat exchanger fabricated fom silicon, Speifial the thermal expansion coefficients ofthe device andthe he ‘exchanger would be mated, allowing the elimination of sliferntil thermal expansion-induce stress a the interface between the device sad the beat exchanger Ia the case of a silicon miero heat exchanger, mirofabriation techniques an be used to aciove precise contol over the paths and cross-sectional shapes amd arrangements of the Imicrochangels, and the overall dimensions of these src= tures can be minimized to allow very close packing of devices. Finally, an important advantage of the micro heat exchanger is that its Limited thickness ean allow alternate Stacking of devices and cooling layers, as shown in FIG. 25, below. FIG. 4 illusteates another possible vacation inthe desig. of the micro beat exchanger 200. As shown, 3 single pathway, such as pathway 220A through the micro heat fexclangér 200 is Separated after the inlet 222A into IL Separate pathways 220A-1 through 220A11 and recom: bined toa single pathway a he outlet 224A. The width of ‘he channel i the regions 2204-1 to 2204-11 caa be varied in size and shaped to insure that the uid distiute among each of the separate paths 2200-1 to 2204-11 acconing to need, IG. $ illustrates anther posible variation inthe design ofthe micro bea exchanger 200. As shosrn, the wo path ‘ways 220-1 and 220-2 are combined just before the outlet 224, allowing the use of + single id line 10 being ‘connected externally 10 the micto best exchanger 200. In dation, near the end of the path 220-2, the channel splits into 7 parallel pathways 220-21 trough 220-27, ilutat- ‘ng the possibility for 2 single path to be separated into separate paths and recombined within the mio heat ‘exchanger 200, as described previously wit respect 0 FIG, 4 ‘Macro Heat Exchanger 400 Desig The macto heat exchanger 400 can consist of any of a umber of conventional macroscopic approaches for best ‘ejection othe ambien. For example, the Rud ean be routed 18 Through a channel inthe base of 2 metal fin heatsink. One advantage of the system 100 is that the highpresae Capabilities of the pump 300 allow the Oude resistance of the macro heat exchanger 400 to be high if that allows for other performance or cost advantages. So, it posible 1 ‘out the fluids throughs complicated path within the mero feat exchanger 400 i order to minimize the thermal resis: tance without concern forte implications of increased Hid Aow resistance. ‘6 shows an example of s macro heat exchanger 4004, whichis based on the design of conventional mac- roscopie heat exchangers that contain fas 408. low chan- ‘els 420 disposed witha aco element 418 ha allows Dui ‘low between the Nui inlet 422 andthe Mid outlet 424. An ‘portant advantage is that the shape and performance ofthe macro beat exchanger 400 can be opimtzed outside of the constraints of the environment ofthe device SO, because the hat may be transported great lengths through the flexible fluidic conections 110, 112 and 114 between the elements ofthe loop. ‘An advantage that may be realized by way of the system 100 is that it possible to design a macro heat exchanger 400 that includes avery complicated Hid low path or pas throughout the igh-surace-aea srutures that provide ‘thermal contsct to the air. FIG. 7 shows an example of & possible macro heat exchanger 400 in which fuid channels 420 are routed ato the fins 4D6 that potride from the core Clement 418. This routing of fu How pats into the fins 406 can significanly reduce the overall thermal esstnce of the macro heat exchanger 400, thereby amproving the beat rejection peformance ofthe entire sytem 100. ‘One prefered embodiment of the invention isto directly ‘couple the macro heat exchanger to the exterior surfaces of the system. FIG. 1 above shows the mscro bea exchanger ‘connected 1 afin array beat sink, but it might be advan ‘e0us to connect the macro leat exchanger directly to the Sutsde surface ofthe system. If te system isa deskp. ‘computer, Such a embodimen! would involve mounting tae tmacto eat exchanger directly on the inside surface ofthe side or top of the eacksue. Ifthe spstem is» laptop ‘computer, mounting the macro heat exchanger within the backside ofthe Seren would be advatiageous, Ia these wo cases, such 2 contiguation kes advantage of enhanced ‘afurl convection off of these vertically created surfaces. 'As with the micro heal exchanger 200, thermal modeling 2s discussed furter hereinafter ean be used o optimize he Aistibution of the uid paths 420 within the macro heat ‘exchanger 400, including detailed design ofthe diameters, ros-sctional profiles, depths, shapes, densities, and ober geometric parameters so a5 to optimize the performance of the macro heat exchanger 400, Typically, afler the beat exchangers 200 and 400 are designed for optimum thermal performance, the perfor ‘mance requirements of the pump 300 may’ be determined, Andis characteristics can then be independently optimized, (One feature ofthe present invention is thatthe capabilities of the pump 300 may be tailored 1 allow independent optimization of the heat exchangers 200 and 400, thereby Producing substantially improved overall system thermal performance. Eleco Osmotic Pump 300 Design and Fabrication The prefered electroosmotic pump 30 in thissystem can ‘ve produced from a varely of materials and by a sumber of fabrication methods. Other pumps, however, such a8 clectostatically-actuted thin membrane pumps, pezoclee- {ee pumps, electohydredynamic pumps, vltasonic pumps. and others may also be used and certain sdvaatages of heUS 6,942,018 B2 19 present invention sill would be obtained. Preferably, Fowever, the pump isan electronsmotic puryp 300, wacze the pump structure includes a quid-filled chamber 213 with clecraes 314 and 316 on ether side of 4 porous sruture ‘310,38 shown ia FIG. 2 and meationed shove. When 30 ‘circ potemialdiference between tho anode 34 and the fathode 316, and thus between the opposite sides of the porous structure 310 exis, ions within the poreus structure ‘310 are drawn from the side 3121 to the side 312A, and the neighborig Tigi is pulled through the suture 310 38 well. The resulting How and pressure dllereace causes the Tiguid Mow through the entire elosedloop system 100. I the ‘embodiment shova in FIG. 2, a porous suture 310 inthe form of a ceramic dik i sealed between the halves 312A and 312B ofthe chamber 312, and provisions for the Huid {net $22 and cullet 324, anode 314, cathode 316, and aalyticrecombiner 326 te shown. This particular pump embodiment may be easly assembled from inexpensive tater, and used fo generate pressure in excess of 2 Atm, {4d ow rates as high a 10 mba Tn order for the preferred electronsmotic pump 300 to generale te pressure and flow rates desired, iis preferable {hat the pump 300 ince the following components 1A porous structure 310 festarng 2 lita of small- ameter palnways passing from one side tothe othe. The Giameters of the pathways are typically swaller than 0.01, ‘mm in diameter, ad itis preferable if they are smaller than (0.0025 mm in diameter. The reason fr this preference is that the smaller diameter channels result in ltger faction of the Mud in proximity tothe surfaces, anda lrg charged fraction ofthe Mui, leading to a larger force on the total fluid fora particular potetal difference. The thickness of the porous structure 310 is typically between 1 mm and 1 em. Thier structures reslt in a increased flow rae for 8 panicula potential diference, but itis important to remem bor the resulting pressure exerts a force om this structure, and itean fll itis to thin. The baanee between the reguire- ‘ments of bigh flow rate and reliability lead to a petesed thickness for a ceramic structure of several mm. Iris possible to improve this station by providing support for the porous structure at several locations within the regions ‘on opposite sides, as shown in FIG. 10, ‘When space isa design constsin or consideration, the mensions of the camber are chosen to minimize the size tne mas of the pump, bu io provide a robust enclosure. The oelosure must be fabsicated from a material wit insulating Surfaces, so tht there is no eurent frm the cathode of ‘pede into the chamber surfaces. For chambers made from serie, the overall dimensions are several cm, and the thickness of the walls i 1-3 mm. All of thse dimensions ‘may be reduced lo allow pumps with everall dimension of less than 1 cm, and even as small as 1-2 mum: hese pumps feature chamber thicknesses near 1 avn, and down 10 0. smn respectively The material of the porous siracture 310 showld have a high electroosmotic mability with respect (0 the Working fui, and provide mechanical intepity necessary to with stand the high difeeainl presse that will coca 2. Apairof electrodes, the anode 314 and the elhode 316 1s show, for applying the elects feld across the porous stucture 310. These electrodes 314,316 are te immersed Into the uid on opposite sides ofthe porous siructure 310, and should withstand chemical interactions wih the Mid, 38 ‘well asthe electolysis tht will occur when voltages are plied. 3. An inlet 322 and an outlet 324 for the Mid fw. 4A means for capturing. the evolved hydrogen and ‘oxygen gases and recombining to replace the water lost to 20 lecolysis, such ste catalytic recombine 326 shown. An ‘example of atch a eatlyie recombiner 326 is shown in 1G. 10, and coasisis ofa small chamber fled with platinum coated mesh, or with ceramic pellets coated with platinum, The pltinum surfaces serve as a substrate for an eficient resetion beeen H2 and O2 molecales generated elsewhere {nthe pump to recombine to form liquid wate, after which this water pascs back ino the main chamber ofthe pump. Thischamber ean be positioned within the walls of he pp chamber 312, or be attached to the outside ofthis chamber. Wis important for the rcombiner chamber 10 provide & means for gas to eater from tbe pump chamber and foe id ‘5A working fluid that features low viscosity, high resistivity, and high electroosmotic mobility witb respect the surfaces of the porous structure, This Mid should be ‘composed of consitents that will st degre ding long term exposure tothe other materials in the system 100, of during continuous electrolysis. ‘Embodiments tha contain these clemenss of the pump 300 that are approprite for closed-ioap opetation of Auidic cooling sjsem 100 will now be described. These dscrptons include details 3st the formation ofthe oie pump structure, methods for attachment of elecrodes wo the Surfaces ofthe porous structures and specie examples of Selected materials to form the porous stuetue 310 Sintered Silica Pump Fabrication Process ‘One possible method for producing sich pumping eke ments is use a packed ba of silica paticles asthe porots Strctue 310. Vatious proceses for fabecatng the sintered particle pumping media have been developed snd are well Known to those sled in the are. The first proces is o centrifuge a silca-water slurry and cant off the water, dry the cake, sls nto ~1 mm disk sections and sinter. This works well for paticls having +

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