STU/D432S

SamHop Microelectronics Corp. Nov,19,2007 ver1.4

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES
PRODUCT SUMMARY
4 Super high dense cell design for low RDS(ON).
VDSS ID RDS(ON) ( m W ) Max
Rugged and reliable.
40V 50A 9 @ VGS = 10V
TO-252 and TO-251 Package.
D

G G
D
S S
G
STU SERIES STD SERIES
TO-252AA(D-PAK) TO-251(l-PAK)
S

ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
a
Drain Current-Continuous @Ta 25 C ID 50 A
b
-Pulsed IDM 100 A
a
Drain-Source Diode Forward Current IS 20 A
c
Avalanche Current I AS 23 A
c
Avalanche Energy E AS 130 mJ
a
Maximum Power Dissipation Ta= 25 C PD 50 W
Operating Junction and Storage
TJ, TSTG -55 to 175 C
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case R JC 3 C /W
Thermal Resistance, Junction-to-Ambient R JA 50 C /W

1
 STU/D432S
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
5 OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS V GS = 0V, ID = 250uA 40 V
Zero Gate Voltage Drain Current IDSS V DS = 32V, V GS =0V 1 uA
Gate-Body Leakage IGSS V GS = 20V, V DS = 0V 100 nA
a
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) V DS = V GS , ID = 250uA 1.25 1.6 3 V
V GS = 10V , ID =10A 7 9 m ohm
Drain-Source On-State Resistance RDS(ON)
V GS = 4.5V, ID =5A 9 11 m ohm

On-State Drain Current ID(ON) VDS = 10V, VGS = 10V 30 A

Forward Transconductance gFS VDS = 10V, ID = 10A 28 S
b
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 1130 PF
VDS =15V, VGS = 0V
Output Capacitance COSS 240 PF
f =1.0MHZ
Reverse Transfer Capacitance CRSS 145 PF

SWITCHING CHARACTERISTICS b
Turn-On Delay Time tD(ON) VDD = 15V 18 ns
Rise Time tr ID = 10 A 22 ns
VGS = 10V
Turn-Off Delay Time tD(OFF) RGEN = 3.3 ohm 61 ns
Fall Time tf 9.6 ns
Total Gate Charge Qg VDS =15V, ID =10A,VGS =10V 23.5 nC
VDS =15V, ID =10A,VGS =4.5V 11.5 nC
Gate-Source Charge Qgs VDS =15V, ID = 10A 2.7 nC
Gate-Drain Charge Qgd VGS =10V 3.2 nC
2
S T U/D432S
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage VSD V GS = 0V, Is = 20A 0.91 1.3 V

Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c. Start ing TJ=25 c , L = 0.5 mH , RG = 25 W , I AS = 23 A, VDD <
-V(BR)DSS ( See Figure13 )
100 60
V G S =10V V G S =4V
80 48
V G S =3.5V
ID , Drain C urrent(A)

I D , Drain C urrent (A)

60
36

-55 C
40 V G S =3V
24
T j=125 C
20 V G S =2.5V 12 25 C

0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2

V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

20 2.0
R DS (ON) , On-R es is tance

1.8
16 V G S =10V
R DS (on) (m W)

1.6 I D =10A
Normalized

12 V G S =4.5V
1.4 V G S =4.5V
8 I D =5A
1.2
V G S =10V
4
1.0

1 0
1 20 40 60 80 100 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

3
 S T U/D432S

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.6 1.40
I D =250uA
1.4 V DS =V G S
1.30
I D =250uA

B V DS S , Normalized
V th, Normalized

1.2 1.20
1.0
1.10
0.8
1.00
0.6
0.90
6 0.4
0.2 0.80
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

30 60
I D =10A
25
Is , S ource-drain current (A)

25 C
R DS (on) (m W)

20 20
125 C 125 C
15 10

10
75 C 25 C
5

0 1
0 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.20

V G S , G ate- S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

4
 STU/D432S
1800 10
VDS=15V

VGS, Gate to Source Voltage (V)

1500
8 ID=10A
Ciss
1200
C, Capacitance (pF)

6
900
4
600
Coss
6 300
2
Crss
0 0
0 5 10 15 20 25 30
0 4 8 12 16 20 24 28 32
VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC)

Figure 9. Capacitance Figure 10. Gate Charge

350 600

100
Switching Time (ns)

100 TD(off ) Tr
1m
ID, Drain Current (A)

60 Tf s
it
Lim

10
ms
10
N)

TD(on) 0m
(O

s
S
RD

10 10 1s
DC

VGS=10V
V DS =15V ,ID=10A
1 1 Single Pulse
V G S =10V Tc=25 C
0.5
1 6 10 60 100 300 600 0.1 1 10 30 60
Rg, Gate Resistance (W) VDS, Drain-Source Voltage (V)

Figure 11.switching characteristics Figure 12. Maximum Safe

Operating Area

5
STU/D432S

V ( BR )D S S
15V
tp

L D R IVE R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0.0 1 IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 13a. F igure 13b.

1
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
SINGLE PULSE 3. TJM-TA = PDM* RθJA (t)
4. Duty Cycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

Square Wave Pulse Duration (sec)

Figure 14. Normalized Thermal Transient Impedance Curve

6
S T U/D432S

7
S T U/D432S

b3
A
C2
L3

E1 D
H

b2
L4

e b

L2 A1
L

L1

10 387 7 4
C2 483 0.584 0.019 0.023
b 0.814 0.889 32 0.035
b2 864 1.092 4 43
b3 232 436 6 4
L2 0.508 REF. 0.020 REF.
6.000 00 36 4
6.400 6.604
4.902 5.004 0.193 0.197
2.290 BSC 0.090 BSC
9.601 210 78 402
A1 0.010 0.127 0.0004 0.005
L4 0.066 0.940 0.026 0.037
L 1.397 1.651 0.055 0.065
L1 2.743 REF. 0.108 REF.
L3 1.100 REF. 0.043 REF.

8
S T U/D432S
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube

" A"

TO-252 Carrier Tape

UNIT:㎜
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
TO-252 6.80 10.3 2.50 ψ1.5 16.0 1.75 7.5 8.0 4.0 2.0 0.3
ψ2 + 0.1
(16 ㎜) ±0.1 ±0.1 ±0.1 0.3± 0.1± ±0.15 ±0.1 ±0.1 ±0.15 ±0.05
- 0

TO-252 Reel

UNIT:㎜
TAPE SIZE REEL SIZE M N W T H K S G R V
ψ330 ψ97 17.0 2.2 ψ13.0
10.6 2.0
16 ㎜ ψ 330 + 1.5 + 0.5
± 0.5 ± 1.0 - 0.2
±0.5
- 0