Академический Документы
Профессиональный Документы
Культура Документы
1
Optical Link System Block Diagram #2
Light Sources - Properties
In order for the light sources to function properly and find
practical use, the following requirements must be satisfied:
• Output wavelength: must coincide with the loss minima of the
fibre
• Output power: must be high, using lowest possible current
and less heat
• High output directionality: narrow spectral width
• Wide bandwidth
• Low distortion
•High coupling efficiency
•The power requirement for its operation must be low.
•The sources must be highly reliable
•The sources should be reasonably low cost.
•The sources must have long lifetime and it must be possible to
operate the device continuously at room temperature.
3
Light Sources - Types
Every day light sources such as tungsten filament and arc lamps
are suitable, but there exists two types of devices, which are
widely used in optical fibre communication systems:
Light Emitting Diode (LED)
Slightly sharp light pulse
Semiconductor Laser Diode (SLD or LD).
Very sharp light pulse (single wavelength)
Very narrow
4
Review of Semiconductor Physics
8
Reverse-biased pn Junction
12
a) Cross-section drawing of a
typical GaAlAs double
heterostructure light emitter.
In this structure, x>y to
provide for both carrier
confinement and optical
guiding.
b) Energy-band diagram
showing the active region,
the electron & hole barriers
which confine the charge
carriers to the active layer.
13
LED Structures and Configuration
•The peak emission wavelength in an LED is expressed as a
function of the bandgap energy, Eg in electron volts (eV) as
follows
hc 1.24
c μm
Eg E g (eV )
•For a ternary alloy, the relationship between the band gap
energy, Eg and fraction ratio, x , when 0≤ x≤ 0.37 is given by
14
LED Structures and Configuration
• For photonic communications requiring data rate 100-200 Mb/s with
multimode fiber with tens of microwatts, LEDs are usually the best
choice.
• Two type LED configurations
– Edge Emitting LED (ELED)
– Surface Emitting LED (SLED)
16
Surface Emitting LED (SLED)
• Comparatively simple structure, relatively inexpensive,
offer low-to-moderate output power levels, and are capable
of low-to-moderate operating speeds.
• Optical output power is as high or higher than the edge-
emitting LED, since the emitting area is large, causing poor
coupling efficiency to the optical fiber.
• Surface-emitting LEDs are almost perfect Lambertian
emitters. This means that they emit light in all directions.
• The radiant intensity is maximum normal to the surface and
decreases in proportion to the cosine of the angle from the
normal.
N = N0cos𝜽 (Lambert’s cosine law )
• Thus very little of the total light goes in the required direction
for injection into an optical fiber.
17
Surface-Emitting LED
The spectral width (The Full Half Wave Maximum, FHWM) of LED is
depending on the emitting surface of LED where surface emitting will
give more FWHM compare to the edge emitting.
19
Rate equations, Quantum Efficiency & Power of LEDs
• When there is no external carrier injection, the excess density
decays exponentially due to electron-hole recombination.
n(t ) n0e t /
• n is the excess carrier density,
n0 : initial injected excess electron density
: carrier lifetime.
• Recombination rate R:
dn n
R
dt
• Recombination rate (R)=Radiative recombination rate + nonradiative
recombination rate
R Rr Rnr
or
21
Internal Quantum Efficiency & Recombination
lifetimes
• The internal quantum efficiency of a semiconductor material: the ratio of
the radiative electron-hole recombination coefficient to the total (radiative
and nonradiative) recombination coefficient.
Rr nr int : internal quantum efficiency in the active region
int recombinat ion lifetimes
Rr Rnr r nr r
• This parameter is significant because it determines the efficiency of
light generation in a semiconductor material.
Optical power generated internally in the active region in the LED is:
i hci c
Pint int h int ,
e
e
Pint : Internal optical power,
i : Injected current to active region
22
External Quantum Efficiency
# of photons emitted from LED
ext
# of LED internally generated photons
In order to calculate the external quantum efficiency, we need to
consider the reflection effects at the surface of the LED. If we consider
the LED structure as a simple 2D slab waveguide, only light falling within
a cone defined by critical angle will be emitted from an LED.
23
Example
The radiative and nonradiative recombination lifetimes of the minority
carriers in the active region of a LED are 60 ns and 100 ns. Determine the
total carrier recombination lifetime and the power internally generated
within the device when the peak emission wavelength is 870 nm at a
driving current of 40 mA.
24
Output Optical power
• The output photon flux 𝟇o is related to the external quantum efficiency 𝞰ext
𝟇o= 𝞰ext i/e
•The internal efficiency 𝞰in for LEDs ranges between 50% -100%
The external quantum efficiency of LEDs is thus typically below 50%.
•The linear dependence of the LED output power Po on the injected current i is
valid only when the current is less than a certain value (say few tens of mA on a
typical LED). For larger currents , saturation causes the proportionality to fail
(known as “current droop”).
25
Responsivity or Gain
• The responsivity R of a LED is defined as the ratio of the emitted optical
power po to injected current i, i.e. R= Po/i
R= Po/i = h𝝼 𝟇o /i = 𝞰ext h𝝼 /e
Power-conversion efficiency
•Another measure of performance is the power-conversion efficiency,
defined as the ratio of the emitted optical power Po to the applied electrical
power (or efficiency of converting electrical power to optical power).
𝞰c = Po/i V= 𝞰ext h𝝼 /eV
26
Definition of laser
• A laser is a device that generates light by a process called
STIMULATED EMISSION.
• The acronym LASER stands for Light Amplification by
Stimulated Emission of Radiation
• Semiconducting lasers are multilayer semiconductor devices
that generates a coherent beam of monochromatic light by
laser action. A coherent beam resulted which all of the
photons are in phase.
• Laser is an optical oscillator. It comprises a resonant optical
amplifier whose output is fed back into its input with
matching phase.
mirror 1 mirror 2
Mirrors used to
“re-cycle” phonons” “LED” coherent light
R = 0.99 R = 0.90
27
For Successful Lasing Action:
•Optical Gain - which can support a population inversion.
Achieved by population inversion
Optical power increases on each pass through amplifying medium
•Optical resonator - Optical Feedback or cavity to create a high
radiation density.
Achieved by device configuration eg. 2 mirrors - this arrangment is
referred as an oscillator cavity or Fabry Perot cavity
Needed to increase the total optical amplification by making photons
pass through the gain region multiple times.
•Pump source-An external exciter to create the population
inversion in the gain medium.
Pumping process prepares amplifying medium in suitable state
Laser components
•gain medium, a
feedback system, a
pump and an output
coupling system
28
Mechanism of Light Emission
• Three main process for laser action (light emission):
1- Photon absorption – pumped source
2- Spontaneous emission
3- Stimulated emission
In stimulated emission, an incoming photon with energy h stimulates the emission
process by inducing electrons in E2 to transit down to E1.
While moving down to E1, photon of the same energy h will be emitted
Resulting in 2 photons coming out of the system
Photons are amplified – one incoming photon resulting in two photons coming out.
29
Absorption
When a photon with certain energy is incident on an electron in a
semiconductor at the ground state(lower energy level E1 the
electron absorbs the energy and shifts to the higher energy level
E2.
The energy now acquired by the electron is Ee = hf = E2 - E1. Plank's law
E2 E2
Incoming
photon
Ee = hf
E1 E1
Electron
Initial state
E2
E1
Excited electron
final state
30
Spontaneous Emission
• E2 is unstable and the excited electron(s) will return back to the
lower energy level E1
• As they fall, they give up the energy acquired during absorption in
the form of radiation, which is known as the spontaneous emission
process.
E2 E2
Photon
E1 E1 Ee = hf
Initial state
31
Stimulated Emission
• But before the occurrence of this spontaneous emission process, if
external stimulation (photon) is used to strike the excited atom then, it will
stimulate the electron to return to the lower state level.
• By doing so it releases its energy as a new photon. The generated
photon(s) is in phase and have the same frequency as the incident
photon.
• The result is generation of a coherent light composed of two or more
photons.
• In quantum mechanic – Two process: Absorption and Stimulated
emission
E2 E2 Ee = hf
Ee = hf Ee = hf
Coherent light
E1 Ee = hf
E1
33
Laser Diode
• A laser diode (LD) is a semiconductor optical amplifier (SOA) that has an
optical feedback.
• A semiconductor optical amplifier is a forward-biased heavily-doped p+-
n+ junction fabricated from a direct-bandgap semiconductor material.
• The injected current is sufficiently large to provide optical gain.
• The optical feedback is usually implemented by cleaving the
semiconductor material along its crystal planes - cleaved surfaces to act
as reflectors.
=> The semiconductor crystal therefore in general can act both as a gain
medium and as a Fabry-Perot optical resonator.
The diode is
often cleaved
at one end and
roughened at
the other end.
34
Structure of Laser Diode
• Laser diode structure is quite similar to the construction of
the edge emitting LED
• Two ends surface are cleaved to make them work as mirror
for positive feedback
• The thickness of active region in laser diode is very small
35
The Lasing Action
• The population inversion region is a layer along the junction also
call inversion layer or active region
• Now consider a photon with E = Eg = Ec-Ev .Obviously this photon
can not excite electrons from EV since there is NO electrons there
• However the photon CAN STIMULATE electron to fall down from
CB to VB.
• Therefore, the incoming photon stimulates emission than absorption
• The active region is then said to have ‘optical gain’ since the
incoming photon has the ability to cause emission rather than being
absorbed.
eV Eg
Than electrons in
Holes in VB the valance band
EFp near EV
VB
EFn-EfP = eV
There is therefore a population inversion between
eV > Eg
energies near EC and near EV around the junction.
eV = forward bias voltage
This only achieved when degenerately doped p-n
Fwd Diode current pumping junction is forward bias with energy eV > Egap
injection pumping
37
Diode Laser Operation
p+ Junction n+
E
c
E p+ n+
g eV E E
o c Fn
Inversion E
E region c
Ev Holes in VB E E
g eV
Fp Electrons Electrons in CB E Fn
c
E
Fp
E
(a ) v (b )
L i
L , i = 1, 2, ..
2n n = refractive index
Modes 2 2
f
2nL c
Gaussian output
profile
5 3 1 01 3 5 41
Wavelength (nm)
Power Vs. Current Characteristics
Temp.
5
4 LED
3 Stimulated
emission
2 (lasing)
1 Spontaneous emission
50
Threshold current
Current I (mA) Ith
43
Types of Laser Diode (LD)
• There are two types of Laser diode commonly used in
communication system
– Fabry-Perot laser diode
– Distributed feedback (DFB) laser diode
44
Laser - Fabry-Perot Laser Diode
Strong optical feedback in the longitudinal direction
Multiple longitudinal mode spectrum Ppeak
“Classic” semiconductor laser
– 1st fibre optic links (850 nm or 1300 nm)
– Short & medium range links
Key characteristics P
– Wavelength: 850 or 1310 nm
Threshold
– Total output power: a few mw
– Spectral width: 3 to 20 nm
I
– Mode spacing: 0.7 to 2 nm
– Highly polarized
– Small NA ( good coupling into fiber) 250-500 um
45
Laser - Fabry-Perot Laser Diode
• The arrangement for Fabry-Perot laser diode is where the active medium
is place between two mirror
• Two mirror in the arrangement to provide positive feedback for laser
diode
• Fabry-Perot lasers are the most economical, but they are generally noisy,
slower devices.
• The radiation in a laser diode is generated within a Fabry-Perot resonator
cavity.
46
Laser - Fabry-Perot Laser Diode
• To determine the lasing condition and resonant frequencies, we should
focus on the optical wave propagation along the longitudinal direction, z-
axis.
• The optical field intensity, I(z,t), can be written as:
I ( z, t ) I ( z )e j (t z )
• Lasing is the condition at which light amplification becomes possible by
virtue of population inversion. Then, stimulated emission rate into a given
EM mode is proportional to the intensity of the optical radiation in that mode.
• In this case, the loss and gain of the optical field in the optical path
determine the lasing condition. Population inversion must be achieved so
that optical amplification and thus the lasing can start. For this to happen,
gains in the cavity must overcome losses.
• After traversing a distance of z in the cavity, the optical intensity will become
I ( z) I (0) exp g z
• Where 𝜞 is called the confinement factor, g represents the gain, is the
absorption coefficient. 47
Laser - Fabry-Perot Laser Diode
• For one round trip covers a length of z= 2L and involves
reflections from mirrors with reflectivity coefficients of R1 and
R2 which are given by
48
Threshold gain & current density
1 1
g th ln Laser starts to " lase" iff : g gth
2L R1 R2
•Then the Carrier Density at the conduction band
49
Laser - Distributed Feedback (DFB)
No cleaved faces, uses Bragg Reflectors for lasing
Single longitudinal mode spectrum
High performance
– Costly
– Long-haul links & DWDM systems
Key characteristics Corrugated feedback Bragg
SMSR
50
Laser - Distributed Feedback (DFB)
• In DFB lasers, the optical resonator structure is due to the incorporation
of Bragg grating or periodic variations of the refractive index into
multilayer structure along the length of the diode.
• The Bragg grating is used to reduce the spectral width of the laser
spectrum
• The Bragg grating only allow selective wavelength propagate
• This Bragg grating also acts as mirror
Output power, mW
Gain
Δλ λ (nm)
51
Figure: The DFB laser diode & its spectrum
Laser - Distributed Feedback (DFB)(Cont’1)
• The spectral width of the laser spectrum is extremely narrow
and suitable for communication system especially in WDM
system
• DFB lasers are quieter devices (e.g., high signal-to-noise),
have narrower spectral widths, and are usually faster
devices.
• DFB lasers offer the highest performance levels and also
the highest cost of the two types.
– They are nearly monochromatic (i.e. they emit a very pure
single color of light.) while FP lasers emit light at a
number of discrete wavelengths.
– DFB lasers tend to be used for the highest speed digital
applications and for most analog applications because of
their faster speed, lower noise, and superior linearity.
52
Comparison (Revision)
LED Laser Diode
54
On-OFF Modulation Linear Modulation
Optical Transmitter Design
Electrical driver
– DC driver
• Sufficient light for illumination
• Laser: lasing level
• Ensuring linear modulation
– AC driver (modulator)
– Modulation depth
Transmitter Field-of-View (FOV)
– Link range
– Coverage
Modulation schemes
55
Two Main Approaches to Optical Transmission
58
Modulation
The process transmitting information via light carrier (or any carrier signal) is called
modulation.
• Direct Intensity (current)
• Inexpensive (LED)
• In LD it suffers from chirp up to 1 nm (wavelength variation
due to variation in electron densities in the lasing area)
DC
DC
MOD
Laser Source (LD)
Modulated optical
R carrier signal
I
RF (modulating signal)