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Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
2SB1560 B
Equivalent circuit C
5.0±0.2
VCBO –160 V ICBO VCB=–160V –100max
2.0
1.8
9.6 2.0±0.1
19.9±0.3
4.0
IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ a ø3.2±0.1
b
IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V
PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V
2
4.0max
20.0min
Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz
3
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
–70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ b. Lot No.
–10 . 5m –3 –10
–2 mA
mA
– 2 .0
–10
–1 .5m A
–8 –1. 2mA –8
–2
–6 –0.8m A –6
–10A
–0.6m A
–7A
mp)
)
Temp
)
–4 –4
Temp
I B =–0.4mA I C =–5A
e Te
–1
(Case
(Cas
(Case
125˚C
–2 –2
–30˚C
25˚C
0 0 0
0 –2 –4 –6 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –2.5
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
40,000 50000 3
125˚C
DC Curr ent Gain h F E
Typ
10000 25˚C 1
10,000
1000
10
Maxim um Power Dissipation P C (W)
10 m
80 –10 0m s
Cut- off F req uency f T (M H Z )
s
W
–5 DC
ith
Co lle ctor Cu rre nt I C ( A)
In
fin
60 Typ
ite
he
50
at
–1
si
nk
40
–0.5
Without Heatsink
20 Natural Cooling
–0.1
Without Heatsink
3.5
0 –0.05 0
0.02 0.05 0.1 0.5 1 5 10 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
48