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Introduction
This application note has been written to demonstrate how the Agilent
Technologies EEsof ADS software package can be used to simulate a
diode detector circuit reliably against temperature.
Detector Circuit
The input impedance in this example was chosen to be 33 Ohms. L1
and C2 are providing the reactive match, while R1 provides a good
broadband resistive match.
The bias is applied to the first diode via R1, and R2 acts as the resistive
load for the detector’s output voltage. The second diode has an
identical DC chain, and therefore the same forward current, assuming
L1
13 nH
C2 VOUT1
C1 33 pF
0.2 pF C4
R2
R1 47k OHM 100 pF
470 OHM
HSMS-2865
– MY TEMP = -25
VOUT 2
C3
V DC
P 1TONE + 32 pF I-PROBE R3
SRC1
PORT 1 I-PROBE1 47k OHM
VDC = 380 mV
NUM = 1 –
VBIAS R4
Z = 33 OHM
470 OHM
P = dBm LOW
(INPUT PWR)
FREQ. = 1.8 GHz
2
n 1 1
T -4060 –
Is = Iso e T 298
298
Where:
Rj = Junction Resistance
n = Diode Ideality Factor
k = Boltzmann’s constant
T = Temperature in ° Kelvin
Is = Saturation Current
Io = Bias Current
Iso = Saturation current at 25°C
Diode Modeling
To simulate the diode performance in ADS, the non-linear PN junction
diode model was used (The PN junction model can be used for a
Schottky diode, assuming that Eg is set to 0.69). Agilent Technologies
publishes SPICE models for all of its Schottky diodes. These
parameters can be entered into the model as seen in Figure 2. Before
the diode model can be effectively used the package model[3] must also
3
DIODE 100 m
DIODE 1
MODEL = h286 DIE
AREA =
C1 C2 75°C
0.06 pF 0.06 pF
L6 100 u
PORT 0.5 nH
ANODE 2 PORT
PORT 2 L4 L2 CATHODE 2
DIODE
0.5 nH 1.0 nH PORT 4 10 u
DIODE 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
MODEL = b286 DIE Vf - FORWARD VOLTAGE (V)
AREA =
C4
REGION =
0.08 pF Figure 4. If vs. Vf over Temperature
TEMP. = MY_TEMP.
MODE = NONLINEAR
The Diode model in Figure 2 specifies Tnom, the nominal temperature VAR
VAR
VAR1
at which the SPICE parameters were extracted. By default this EQN
INPUT _PWR = 0
parameter is set to 27°C.
HARMONIC BALANCE
The PN junction diode symbol within ADS has the facility to set the
physical temperature of operation. This temperature is different than HARMONIC BALANCE
HB1
the model Tnom. When a temperature is entered at the symbol level, FREQUENCY[1] = 1.8 GHz
ADS will scale Eg, Is, Isr, Cjo, and Vj[4]. ORDER[1] = 3
SWEEP VAR = “INPUT_PWR”
START = -25
Modifying the component variable my_temp to the desired value varies STOP = 15
STEP = 1
the diode temperature. The variable my_temp is seen in Figure 1 and
Figure 3.
Figure 5. Harmonic Balance
Simulation Configuration
A confirmation of the temperature scaling can be seen from the
simulated diode VI curves shown in Figure 4.
Figure 8 shows the results of this simulation, indicating that the match
remains very good over a broad range of input power and temperature.
Summary
This application note has demonstrated a useful technique for
accurately simulating diode detector circuit performance against RF
power and temperature using Agilent Technologies EEsof ADS
software.
VAR
VAR
VAR1
EQN
INPUT _PWR = 0 1
DETECTED VOLTAGE (V)
LSSP
-25°C
LSSP
HB2 100 m
FREQUENCY[1] = 1.8 GHz
ORDER[1] = 3
LSSP_FREQ AT PORT[1] = 1.8 GHz
SWEEP VAR = "INPUT_PWR" 75°C
START = -25
25°C
STOP = 15
10 m
STEP = 1 -26 -22 -18 -14 -10 -6 -2 2 6 10 14
RF INPUT POWER (dBm)
Figure 6. LSSP Simulator
Configuration Figure 7. Detector Output Voltage vs.
RF Input Power Over Temperature
-6.5 100 m
-7.0 80 m
70 m
-7.5
60 m
DETECTED VOLTAGE (V)
-8.0 50 m
INPUT MATCH (dB)
-8.5
40 m -25°C
-9.0
30 m
-9.5
-25°C
-10.0 25°C
20 m
-10.5 75°C
-11.0
75°C
-11.5
25°C
-12.0 10 m
-26 -22 -18 -14 -10 -6 -2 2 6 10 14 -26 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 www.semiconductor.agilent.com
RF INPUT POWER (dBm) RF INPUT POWER (dBm)
Data subject to change.
Figure 8. Input Match (S11) vs. RF Figure 9. Close-up of Temperature Copyright © 1999 Agilent Technologies, Inc.
Input Power Variation 5968-1885E (11/99)