AEGIS

SEMICONDUTORES LTDA.

A1A:260.XX

VOLTAGE RATINGS
VRRM , VR (V)
This datasheet applies to:
VRSM , VR (V) Max. non-
Part Number Max. rep. peak reverse voltage rep. peak reverse voltage
O O
Metric thread: A1A:260.XX,
TJ = 0 to 180 C TJ = -40 to 0OC TJ = 25 to 180 C A1B:260.XX
A1A:260.02 200 200 300
A1A:260.04 400 400 500 Inch thread: A2A:260.XX,
A1A:260.06 600 600 700 A2B:260.XX
A1A:260.08 800 800 900
A1A:260.10 1000 1000 1100
A1A:260.12 1200 1200 1300
A1A:260.14 1400 1400 1500
A1A:260.16 1600 1600 1700

MAXIMUM ALLOWABLE RATINGS

PARAMETER VALUE UNITS NOTES
O
TJ Junction Temperature -40 to 180 C -
O
Tstg Storage Temperature -40 to 180 C -
Max. Av. current 260 A
IF(AV) O
180O half sine wave
@ Max. TC 125 C
IF(RMS) Nom. RMS current 530 A -
5046 50 Hz half cycle sine wave Initial T J = 180O C, rated VRRM
applied after surge.
IFSM Max. Peak non-rep. surge 5500 60 Hz half cycle sine wave
A
current
6000 50 Hz half cycle sine wave Initial T J = 180O C, no voltage
applied after surge.
6540 60 Hz half cycle sine wave

116 t = 10ms
O
Initial T J = 180 C, rated VRRM
applied after surge.
126 t = 8.3 ms
I2t Max. I2t capability kA2s
163 t = 10ms
O
Initial T J = 180 C, no voltage
applied after surge.
178 t = 8.3 ms
2 1/2 2 1/2
Initial T J = 180O C, no voltage applied after surge.
It Max. I t capability 1350
kA2s1/2 I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms).
F Mounting Force 30(~267) N.m(Lbf.in) -
 AEGIS
SEMICONDUTORES LTDA.

A1A:260.XX

CHARACTERISTICS
PARAMETER MIN. TYP. MAX. UNITS TEST CONDITIONS
VFM Peak forward voltage --- 1.15 1.37 V Initial T J = 25 OC, sinusoidal wave, Ipeak = 440A.
VF(TO) Threshold voltage --- --- 0.82 V TJ = 180OC, Av. Power = V F(TO)*IF(AV) +rF*[IF(RMS)]2, sine.
rF1 Forward slope resistance --- --- 0.45 mW Use low values for IFM < pIF(AV)
IRM Peak reverse current --- 10 15.00 mA TJ = 180 OC. Max. Rated VRRM
O
--- --- 0.20 C/W DC operation
RthJC Thermal resistance, O
--- --- 0.20 C/W 180O sine wave
junction-to-case O
--- --- 0.24 C/W 120O rectangular wave
RthCS Thermal resistance, O
--- --- 0.03 C/W Mtg. Surface smooth, flat and greased. Single side.
case-to-sink
wt Weight --- 250(8.75) --- g(oz.) ---
Case Style DO-205AB (DO-9) JEDEC ---

Maximum Allowable Case Temperature Maximum Allowable Case Temperature

190
Maximum Allowable Case Temperature (ºC)

180
Maximum Allowable Case Temperature (ºC)

180
170

160 160

150

140 140
30º 30º
130
60º 120 60º
120
90º 90º
110 120º 120º
100
180º
100 180º
DC
90
80
80
0 100 200 300 0 50 100 150 200 250 300 350 400 450
*Sinusoidal Waveform
*Rectangular Waveform
Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

 AEGIS
SEMICONDUTORES LTDA.

A1A:260.XX

Maximum Average Forward Power Loss Maximum Average Forward Power Loss
30º
2000
30º
2400

Maximum Average Forward Power Loss (W)

Maximum Average Forward Power Loss (W)

2200 1800

2000 1600
1800 1400
1600
60º
1200 60º
1400
1200 1000
90º
90º 120º
1000 800
120º 180º
800 180º 600
DC
600
400
400
200 200

0 0
0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 400 450 500 550
*Sinusoidal Waveform *Rectangular Waveform

Average Forward Current (A) Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics

Forward Voltage Drop Transient Thermal Impedance vs. Time

0.25
Rthjh
Transient Thermal Impedance (ºC/W)

1000 0.20
Rthjc
Forward Current (A)

0.15
100

0.10

125ºC 25ºC
10
0.05

1 0.00
0.5 1.0 1.5 2.0 2.5 1E-3 0.01 0.1 1 10 100
Forward Voltage (V) Time (s)

Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance

Characteristics
 AEGIS
SEMICONDUTORES LTDA.

A1A:260.XX

DO-205AB (DO-9)