Advanced MOSFET Modeling

Solutions for Assignment 3

1. a) Assuming that the flatband voltage (VFB) is zero, find the threshold voltage
in the ideal case for a MOS capacitor with a substrate doping concentration
NA=1015/cm3 and the gate oxide thickness tox=100nm.
b) Repeat the same for different substrate doping concentrations
(i) NA=1014/cm3
(ii) NA=1016/cm3
(iii) NA=1017/cm3
c) If the above MOS capacitors have Aluminium gate, find the threshold
voltage in each case considering the difference in work function.
d) Repeat the same for MOS capacitors with
(i) n+ polysilicon gate
(ii) p+ polysilicon gate
e) Plot Vth versus NA for all the above cases.
2qN A ε s (2φ B )
Ans: a) Vth (ideal ) = 2φ B + (1)
Cox

 NA  ε ox
where φ B = VT ln  and Cox = .
 ni  tox

From eqn: (1),

when NA=1015/cm3, Vth (ideal ) = 0.9829 V
b) From eqn: (1),
(i) when NA=1014/cm3, Vth (ideal ) = 0.5720 V

(ii) when NA=1016/cm3, Vth (ideal ) = 2.1056 V

(iii) when NA=1017/cm3, Vth (ideal ) = 5.6375 V

c) Aluminium gate
Vth = φ ms + Vth (ideal ) (2)

 Eg 
where φ ms = φ m −  χ s + + φB 

 2q 
 Here φ m = 4.1 V , χ s = 4.05 V and E g = 1.1 eV .

From eqn: (2),

when NA=1014/cm3, Vth = - 0.1570 V

when NA=1015/cm3, Vth = 0.1941 V

when NA=1016/cm3, Vth = 1.2569 V

when NA=1017/cm3, Vth = 4.7289V

d) (i) n+ polysilicon gate

Vth = φ ms + Vth (ideal ) (3)
Eg
where φ ms = − − φB .
2q

From eqn: (3),

when NA=1014/cm3, Vth = - 0.2070 V

when NA=1015/cm3, Vth = 0.1441 V

when NA=1016/cm3, Vth = 1.2069 V

when NA=1017/cm3, Vth = 4.6789V

(ii) p+ polysilicon gate

Vth = φ ms + Vth (ideal ) (4)

Eg
where φms = − φB .
2q
From eqn: (3),
when NA=1014/cm3, Vth = 0.8907 V

when NA=1015/cm3, Vth = 1.2391 V

when NA=1016/cm3, Vth = 2.295 V

when NA=1017/cm3, Vth = 5.7346V

(e) Plot by yourself using the above data.

2. I want to make matched p and n-channel MOSFETs in the same silicon

wafer (i.e Vthp = -Vthn). To do this, I take an n-Silicon sample with doping
 concentration ND=1015/cm3 and diffuse a p-well in it. Identical p and n-
channel MOSFETs are now fabricated in the n and p-regions respectively of
this wafer. The gate oxide thickness is 100nm, Qf/q=3x1011/cm2 and
Aluminium gate is used. What is the doping concentration of the p-well to
obtain matched devices? What are the values of Vth for the FETs assuming
VSB =0V?
Qf Q Dp
Ans: Vthp = φ msp − − − 2φ Bp (5)
Cox Cox

 Eg  N 
where φ msp = φ m −  χ s + − φ Bp  , Q Dp = 2qN D ε s (2φ Bp ) and φ Bp = VT ln  D 
 2q   ni 

Qf Q
Vthn = φ msn − + Dn + 2φ Bn (6)
Cox Cox

 Eg  N 
where φ msn = φ m −  χ s + + φ Bn  , Q Dn = 2qN A ε s (2φ Bn ) and φ Bn = VT ln A 
 2q   ni 

ε ox
Here Cox = for both pMOS and nMOS
tox

Given: Vthp = −Vthn (7)

From eqns: (5), (6) and (7)

Eg Qf 2qN D ε s (2φ Bp ) Eg Qf 2qN A ε s (2φ Bn )
φm − χs − + φ Bp − − − 2φ Bp = −φ m + χ s + + φ Bn + − − 2φ Bn
2q Cox Cox 2q Cox Cox

that is;
Eg Qf 2qN D ε s (2φ Bp ) Eg Qf 2qN A ε s (2φ Bn )
φm − χs − + φ Bp − − − 2φ Bp + φ m − χ s − − φ Bn − + + 2φ Bn = 0
2q Cox Cox 2q Cox Cox

Eg 2Qf 2qN D ε s (2φ Bp ) 2qN A ε s (2φ Bn )

2(φ m − χ s ) −
q
−
Cox
(
+ φ Bn − φ Bp − ) Cox
+
Cox
=0

 ND   NA 
Substituting φ Bp = VT ln  and φ Bn = VT ln  and solving for N A (sorry… please
 ni   ni 

solve by yourself!), we get N A = 7.4 × 1016 cm 3

3. An n-channel MOSFET has the following specifications:
The channel width (Z) = 5µ
µm, the channel length (L) = 1µ
µm, the oxide
thickness (tox) = 50nm, electron mobility = 800 cm2 /V.sec, threshold voltage
(Vth) = 1V. Find the drain current flowing through the device for the
following conditions:
(i) VGS = 2V, VDS = 0.5V.
(ii) VGS = VDS =2V.
Ans: (i) VGS = 2V and VDS = 0.5V, here VDS < VGS – Vth, so the MOSFET is
Zµ n C ox  V 
operating in linear region, and I D =  VGS − Vth − DS  VDS = 0.104 mA
L  2 

(ii) VGS = VDS =2V , here VDS >VGS – Vth, so the MOSFET is working in
ZµnCox
saturation region, and I D = [VGS − Vth ]2 = 0.138 mA.
2L