ON Semiconductor

1 DRAIN

JFET Switching
N–Channel — Depletion
3
GATE
2N5555

MAXIMUM RATINGS 2 SOURCE

Rating Symbol Value Unit

Drain–Source Voltage VDS 25 Vdc
Drain–Gate Voltage VDG 25 Vdc
Gate–Source Voltage VGS 25 Vdc
Forward Gate Current IGF 10 mAdc
1
Total Device Dissipation @ TC = 25°C PD 350 mW 2
3
Derate above 25°C 2.8 mW/°C
Junction Temperature Range TJ –65 to +150 °C CASE 29–11, STYLE 5
Storage Temperature Range Tstg –65 to +150 °C TO–92 (TO–226AA)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) V(BR)GSS 25 — Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS — 1.0 nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V) ID(off) — 10 nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C) — 2.0 µAdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1) IDSS 15 — mAdc
(VDS = 15 Vdc, VGS = 0)
Gate–Source Forward Voltage VGS(f) — 1.0 Vdc
(IG(f) = 1.0 mAdc, VDS = 0)
Drain–Source On–Voltage VDS(on) — 1.5 Vdc
(ID = 7.0 mAdc, VGS = 0)
Static Drain–Source On Resistance rDS(on) — 150 Ohms
(ID = 0.1 mAdc, VGS = 0)
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance rds(on) — 150 Ohms
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance Ciss — 5.0 pF
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss — 1.2 pF
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Delay Time (V
( DD = 10 Vdc,, ID(on) = 7.0 mAdc,, td(on) — 5.0 ns
0 VGS(off) = –10
VGS(on) = 0, 10 Vdc)
Vd ) (See
(S Figure
Fi 1)
Rise Time tr — 5.0 ns
Turn–Off Delay Time ( DD = 10 Vdc,, ID(on) = 7.0 mAdc,,
(V td(off) — 15 ns
VGS(on) = 0,
0 VGS(off) = –1010 Vdc)
Vd ) (See
(S Figure
Fi 1)
Fall Time tf — 10 ns

 Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

November, 2001 – Rev. 3 2N5555/D
 2N5555

PULSE WIDTH
VGS(on)
VDD 90% 90%
50 OHM TEKTRONIX 50% 50%
COAXIAL 567 10% 10%
1.0 k INPUT VGS(off)
CABLE SAMPLING
10 k SCOPE
INPUT PULSE INPUT PULSE
PULSE 50 OHM COAXIAL CABLE
RISE TIME FALL TIME
GENERATOR
(50 OHMS) 1.0 k 50 Rin =
50 OHMS
td(on) td(off)
OUTPUT 10% 10%
INPUT PULSE
RISE TIME < 1.0 ns
90% 90%
FALL TIME < 1.0 ns
NOMINAL VALUE OF ON" PULSE WIDTH = 400 ns tr tf
DUTY CYCLE ≤ 1.0%
GENERATOR SOURCE IMPEDANCE = 50 OHMS
Figure 1. Switching Times Test Circuit

COMMON SOURCE CHARACTERISTICS

ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)

30 5.0
grs , REVERSE TRANSADMITTANCE (mmhos)
brs , REVERSE SUSCEPTANCE (mmhos)
20 3.0
bis, INPUT SUSCEPTANCE (mmhos)
gis, INPUT CONDUCTANCE (mmhos)

2.0
10 bis @ IDSS
brs @ IDSS
7.0 1.0
5.0
0.7
0.25 IDSS
3.0 gis @ IDSS 0.5
2.0 0.3
gis @ 0.25 IDSS
0.2
1.0
0.7
0.1
0.5 grs @ IDSS, 0.25 IDSS
bis @ 0.25 IDSS 0.07
0.3 0.05
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 100
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 2. Input Admittance (yis) Figure 3. Reverse Transfer Admittance (yrs)

20 10
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|b fs|, FORWARD SUSCEPTANCE (mmhos)

5.0
bos, OUTPUT SUSCEPTANCE (mhos)
gos, OUTPUT ADMITTANCE (mhos)

10
7.0 gfs @ IDSS 2.0 bos @ IDSS and 0.25 IDSS
5.0
1.0
3.0 gfs @ 0.25 IDSS
0.5
2.0
0.2 gos @ IDSS
1.0 |bfs| @ IDSS 0.1
0.7
0.5 0.05
|bfs| @ 0.25 IDSS
gos @ 0.25 IDSS
0.3 0.02
0.2 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 100
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 4. Forward Transadmittance (yfs) Figure 5. Output Admittance (yos)

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 2N5555

COMMON SOURCE CHARACTERISTICS

S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 ID = 0.25 IDSS
40° 1.0 320° 40° 0.4 320°
100 200
200 300
0.9 0.3
50° 400 310° 50° ID = IDSS, 0.25 IDSS 310°
300 900
0.8 500 800 0.2
ID = IDSS
60° 400 300° 60° 300°
700
600 600

70° 0.7 500 290° 70° 500 0.1 290°

700 400
600
80° 280° 80° 300 280°
0.6 700 800 0.0
800 200
90° 900 270° 90° 270°
900 100

100° 260° 100° 260°

110° 250° 110° 250°

120° 240° 120° 240°

130° 230° 130° 230°

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 6. S11s Figure 7. S12s

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
100 200
300 ID = 0.25 IDSS
40° 320° 40° 1.0 320°
100 200 400
500
300 600
400
0.6 0.9 500 700
50° 310° 50° 600 800 310°
ID = IDSS 700
800 900
0.5 0.8 900
60° 300° 60° 300°

900 0.4 0.7

70° 290° 70° 290°
800
900
80° 700 800 280° 80° 280°
0.3 0.6
700 ID = 0.25 IDSS
90° 600 270° 90° 270°
600
500 500 0.3
100° 260° 100° 260°
400 100
400
110° 300 200 250° 110° 250°
0.4
300
120° 240° 120° 240°
ID = IDSS 200 0.5
100

130° 230° 130° 230°

0.6

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 8. S21s Figure 9. S22s

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 2N5555

COMMON GATE CHARACTERISTICS

ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)

20 0.5

grg , REVERSE TRANSADMITTANCE (mmhos)

brg , REVERSE SUSCEPTANCE (mmhos)
0.3
big, INPUT SUSCEPTANCE (mmhos)
gig, INPUT CONDUCTANCE (mmhos)

10
0.2 brg @ IDSS
7.0 gig @ IDSS
5.0
0.1
3.0 grg @ 0.25 IDSS 0.07
2.0 0.05
0.03 0.25 IDSS
1.0
0.02
0.7
0.5 big @ IDSS
big @ 0.25 IDSS 0.01 gig @ IDSS, 0.25 IDSS
0.3 0.007
0.2 0.005
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 10. Input Admittance (yig) Figure 11. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos)

10 1.0
gfg @ IDSS
bfg , FORWARD SUSCEPTANCE (mmhos)

7.0 0.7 bog @ IDSS, 0.25 IDSS

bog, OUTPUT SUSCEPTANCE (mmhos)
gog, OUTPUT ADMITTANCE (mmhos)

5.0 0.5
3.0 gfg @ 0.25 IDSS 0.3
2.0 0.2

1.0 0.1
0.7 0.07
0.5 0.05 gog @ IDSS
bfg @ IDSS
0.3 0.03
0.2 brg @ 0.25 IDSS 0.02
gog @ 0.25 IDSS
0.1 0.01
10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 12. Forward Transfer Admittance (yfg) Figure 13. Output Admittance (yog)

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 2N5555

COMMON GATE CHARACTERISTICS

S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°

40° 0.7 320° 40° 0.04 320°

ID = 0.25 IDSS
100 200
300
0.6 400 0.03
50° 100 500 310° 50° 310°
200
300 600
0.5 0.02
400 700
60° 300° 60° 300°
500
ID = IDSS 800
0.4 600 0.01
70° 290° 70° 290°
900
700
80° 280° 80° 280°
0.3 800 0.0
100
90° 900 270° 90° 270°
500
600
100° 260° 100° 600 ID = 0.25 IDSS 260°
ID = IDSS
110° 250° 110° 700 250°
700 0.01
800
120° 240° 120° 800 240°
0.02
900
130° 230° 130° 230°
900 0.03

140° 220° 140° 0.04 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 14. S11g Figure 15. S12g

30° 20° 10° 0° 350° 340° 330° 30° 20° 10° 0° 350° 340° 330°
1.5 300
40° 0.5 320° 40° 1.0 500 320°
200
400 700
100 600
100
0.4 0.9 800 900
50° ID = IDSS 310° 50° 310°
100 ID = IDSS, 0.25 IDSS

0.3 0.8
60° 300° 60° 300°

0.2 0.7
70° ID = 0.25 IDSS 290° 70° 290°

80° 280° 80° 280°

0.1 0.6
900
90° 270° 90° 270°
900
100° 260° 100° 260°

110° 250° 110° 250°

120° 240° 120° 240°

130° 230° 130° 230°

140° 220° 140° 220°

150° 160° 170° 180° 190° 200° 210° 150° 160° 170° 180° 190° 200° 210°

Figure 16. S21g Figure 17. S22g

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 2N5555

PACKAGE DIMENSIONS

TO–92 (TO–226AA)
CASE 29–11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE

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 2N5555

Notes

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 2N5555

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