AOD256

150V N-Channel MOSFET

General Description Product Summary

The AOD256 uses trench MOSFET technology that is VDS 150V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 19A
frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 85mΩ
switching power losses are minimized due to an
RDS(ON) (at VGS=4.5V) < 100mΩ
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
100% UIS Tested
100% Rg Tested

TO252
DPAK
D
Top View Bottom View

D
D

G
S G
S
G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 19
ID
Current TC=100°C 13.5 A
Pulsed Drain Current C IDM 35
Continuous Drain TA=25°C 3
IDSM A
Current TA=70°C 2.5
C
Avalanche Current IAS 9 A
Avalanche energy L=0.1mH C EAS 4 mJ
TC=25°C 83
PD W
Power Dissipation B TC=100°C 41.5
TA=25°C 2.5
A
PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.5 1.8 °C/W

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 AOD256

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 150 V
VDS=150V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.8 2.25 2.8 V
ID(ON) On state drain current VGS=10V, VDS=5V 35 A
VGS=10V, ID=10A 70 85
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 139 170
VGS=4.5V, ID=8A 78 100 mΩ
gFS Forward Transconductance VDS=5V, ID=10A 35 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 19 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1165 pF
Coss Output Capacitance VGS=0V, VDS=75V, f=1MHz 61.5 pF
Crss Reverse Transfer Capacitance 2.5 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.1 2.2 3.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 15.5 22 nC
Qg(4.5V) Total Gate Charge 7 10 nC
VGS=10V, VDS=75V, ID=10A
Qgs Gate Source Charge 4 nC
Qgd Gate Drain Charge 1.2 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=10V, VDS=75V, RL=7.5Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 2.5 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 37 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 265 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD256

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V VDS=5V
25 25

4.0V
20 20
4.5V
ID (A)

ID(A)
15 7V 15

10 10 125°C
3.5V

5 5 25°C
VGS=3.0V
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 2.8

Normalized On-Resistance 2.6

90 2.4
VGS=10V
2.2 ID=10A
VGS=4.5V
Ω)
RDS(ON) (mΩ

80 2
17
1.8 5
70 1.6 2
1.4
VGS=4.5V10
60 VGS=10V 1.2 ID=8A
1
50 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

160 1.0E+01
ID=10A
1.0E+00
140
40
125°C 1.0E-01 125°C
Ω)

120
RDS(ON) (mΩ

IS (A)

1.0E-02
100
1.0E-03 25°C

80 25°C
1.0E-04

60 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOD256

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1400
VDS=75V
Ciss
ID=10A
1200
8
1000

Capacitance (pF)
VGS (Volts)

6
800

600
4

400
2 Coss
200 Crss

0 0
0 4 8 12 16 20 0 25 50 75 100 125 150
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TJ(Max)=175°C
10µs TC=25°C
10µs 800
10.0
RDS(ON) 100µs
ID (Amps)

Power (W)

limited 600 17
1ms
1.0
10ms
5
DC 400 2
10
0.1
TJ(Max)=175°C
200
TC=25°C

0.0 0
0.01 0.1 1 10 100 1000
0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

40
Thermal Resistance

RθJC=1.8°C/W
1

PD
0.1
Single Pulse
Ton
T

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD256

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
IAR (A) Peak Avalanche Current

80

Power Dissipation (W)

TA=100°C
TA=25°C
60
10
TA=150°C
40
TA=125°C

20

1 0
1 10 100 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

20 10000

TA=25°C
1000
15
Current rating ID(A)

Power (W)

17
100 5
10
2
10
10
5

1
0 1E-05 0.001 0.1 10 1000
0 25 50 75 100 125 150 175 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=50°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOD256

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: July 2012 www.aosmd.com Page 6 of 6