NJD2873

Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
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Features
• High DC Current Gain SILICON
• Low Collector−Emitter Saturation Voltage POWER TRANSISTORS
• High Current−Gain − Bandwidth Product 2 AMPERES
• Epoxy Meets UL 94 V−0 @ 0.125 in
50 VOLTS
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
15 WATTS
Qualified and PPAP Capable
COLLECTOR
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2,4
Compliant

MAXIMUM RATINGS 1
BASE
Rating Symbol Value Unit
Collector−Base Voltage VCB 50 Vdc 3
EMITTER
Collector−Emitter Voltage VCEO 50 Vdc
Emitter−Base Voltage VEB 5 Vdc 4
Collector Current − Continuous IC 2 Adc
1 2
Collector Current − Peak ICM 3 Adc 3
Base Current IB 0.4 Adc DPAK
Total Device Dissipation PD CASE 369C
@ TC = 25°C 15 W STYLE 1
Derate above 25°C 0.1 W/°C
MARKING DIAGRAM
Total Device Dissipation PD
@ TA = 25°C* 1.68 W
Derate above 25°C 0.011 W/°C
AYWW
Operating and Storage Junction TJ, Tstg −65 to +175 °C J
Temperature Range 2873G
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V A = Assembly Location
Y = Year
Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week
device. If any of these limits are exceeded, device functionality should not be
G = Pb−Free Device
assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION
Device Package Shipping†
NJD2873T4G DPAK 2,500
(Pb−Free) Units / Reel
NJVNJD2873T4G DPAK 2,500
(Pb−Free) Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number:

January, 2017 − Rev. 18 NJD2873T4/D
 NJD2873

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance °C/W
Junction−to−Case RqJC 10
Junction−to−Ambient (Note 1) RqJA 89.3
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc

(IC = 10 mAdc, IB = 0) 50 −

Collector Cutoff Current ICBO nAdc

(VCB = 50 Vdc, IE = 0) − 100

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 100 nAdc

ON CHARACTERISTICS

DC Current Gain (Note 2) hFE −

(IC = 0.5 A, VCE = 2 V) 120 360
(IC = 2 Adc, VCE = 2 Vdc) 40 −
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) 80 360

Collector−Emitter Saturation Voltage (Note 2) VCE(sat) Vdc

(IC = 1 A, IB = 0.05 A) − 0.3

Base−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 Adc) VBE(sat) − 1.2 Vdc

Base−Emitter On Voltage (Note 2) VBE(on) Vdc

(IC = 1 Adc, VCE = 2 Vdc) − 1.2
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) − 0.95

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 3) fT MHz

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) 65 −

Output Capacitance Cob pF

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) − 80

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
3. fT = ⎪hfe⎪• ftest.

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 NJD2873

TYPICAL CHARACTERISTICS

25

PD , POWER DISSIPATION (WATTS)

20

15

10

0
0 25 50 75 100 125 150 175 200
T, TEMPERATURE (°C)

Figure 1. Power Derating

1000 0.4
150°C VCE = 2.0 V 175°C
175°C
VCE(sat), COLLECTOR−EMITTER

150°C
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN

0.3 100°C
25°C
100°C −40°C
100 25°C −40°C 0.2

0.1

Ic/Ib = 20
10 0
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain Figure 3. Collector−Emitter Saturation Voltage

1.2 1.2
VBE(sat), BASE−EMITTER SATURATION

VBE(on), BASE−EMITTER VOLTAGE (V)

VCE = 2.0 V
1.1 1.1
1.0 1.0 −40°C
25°C
0.9 0.9
VOLTAGE (V)

0.8 −40°C 0.8 100°C

150°C
0.7 25°C 0.7 175°C
0.6 0.6
100°C
0.5 0.5
150°C
0.4 0.4
0.3 175°C Ic/Ib = 20 0.3
0.2 0.2
0.01 0.1 1 10 0.01 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage

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 NJD2873

1.0 1000
500 mA TA = 25°C TA = 25°C
VCE(sat), COLLECTOR−EMITTER

Cibo
SATURATION VOLTAGE (V)
0.8

C, CAPACITANCE (pF)
10 mA
100
0.6 1A Cobo

0.4 100 mA IC = 2 A
10

0.2

0 1
0.01 0.1 1 10 100 1000 0.1 1 10 100
IB, BASE CURRENT (mA) VR, REVERSE VOLTAGE (V)

Figure 6. Saturation Region Figure 7. Capacitance

100 10000
VCE = 10 V
ftau, CURRENT GAIN BANDWIDTH

TA = 25°C
1 mS

IC, COLLECTOR CURRENT

1000
10 mS
PRODUCT (MHz)

100 mS
1S
100
100

10

0 1
1 10 100 1000 10000 1 10 100
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Saturation Region Figure 9. Capacitance

1
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3 0.2
0.2 0.1 P(pk)
RqJC(t) = r(t) qJC
0.05 RqJC = 10°C/W MAX
0.1 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN t1
0.05 0.02 READ TIME AT t1 t2
0.01 TJ(pk) - TC = P(pk) qJC(t)
0.03 DUTY CYCLE, D = t1/t2
0 (SINGLE PULSE)
0.02

0.01
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200
t, TIME (ms)

Figure 10. Thermal Response

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 NJD2873

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
E C 2. CONTROLLING DIMENSION: INCHES.
A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
b3 MENSIONS b3, L3 and Z.
B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
4 NOT EXCEED 0.006 INCHES PER SIDE.
L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE
D OUTERMOST EXTREMES OF THE PLASTIC BODY.
DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUM
1 2 3 PLANE H.
7. OPTIONAL MOLD FEATURE.

L4 INCHES MILLIMETERS
NOTE 7
DIM MIN MAX MIN MAX
b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38
e SIDE VIEW A1 0.000 0.005 0.00 0.13
b b 0.025 0.035 0.63 0.89
0.005 (0.13) M C b2 0.028 0.045 0.72 1.14
TOP VIEW b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
c2 0.018 0.024 0.46 0.61
H Z Z D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
GAUGE SEATING
L2 PLANE C PLANE
H 0.370 0.410 9.40 10.41
L 0.055 0.070 1.40 1.78
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
L BOTTOM VIEW L3 0.035 0.050 0.89 1.27
A1 L4 −−− 0.040 −−− 1.01
L1 ALTERNATE
Z 0.155 −−− 3.93 −−−
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW STYLE 1:
SOLDERING FOOTPRINT* PIN 1. BASE
2. COLLECTOR
3. EMITTER
6.20 3.00 4. COLLECTOR
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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