2N5210/MMBT5210

2N5210/MMBT5210

NPN General Purpose Amplifier

C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
E
C TO-92
BE
B SOT-23
Mark: 3M

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 4.5 V
IC Collector Current - Continuous 100 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max. Units

2N5210 MMBT5210
PD Total Device Dissipation 625 350 mW
Derate above 25°C 5.0 2.8 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

 2002 Fairchild Semiconductor Corporation 2N5210, Rev B

 2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 V
ICBO Collector Cutoff Current VCB = 35 V, IE = 0 50 nA
IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

ON CHARACTERISTICS
hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 200 600
IC = 1.0 mA, VCE = 5.0 V 250
IC = 10 mA, VCE = 5.0 V* 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 V
VBE(on) Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 V, 30 MHz
f= 20 MHz
Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 250 900
f = 1.0 kHz
NF Noise Figure IC = 20 µA, VCE = 5.0 V, 2.0 dB
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
IC = 20 µA, VCE = 5.0 V, 3.0 dB
3
RS = 10 kΩ, f = 1.0 kHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

 2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

vs Collector Current Voltage vs Collector Current

VBEON - BASE-EMITTER ON VOLTAGE (V)

hFE - TYPICAL PULSED CURRENT GAIN

1200 0.30

o V C E = 5.0V
125 C
1000 0.25 β = 10

800 0.20
o
25 C
o 125 C
600
0.15

o
400 25 C
0.10

o
200 - 40 C
0.05 o
- 40 C
0
0.01 0.03 0.1 0.3 1 3 10 30 100 0.1 1 10 100

I C - COLLECTOR CURRENT (m A) I C - COLLECTOR CURR EN T (m A)

Base-Emitter Saturation Base-Emitter ON Voltage vs

VBESAT - COLLECTOR-EMITTER VOLTAGE (V)

Voltage vs Collector Current Collector Current

VBEON - BASE-EMITTER ON VOLTAGE (V)

1.0 1.0

o
- 40 C o
0.8 0.8 - 40 C
o
25 C
o
0.6 25 C 0.6

o
125 C 125 C
o

0.4 0.4

β = 10
0.2 0.2 V C E = 5.0V

0.1 1 10 100 0.1 1 10

I C - COLLECTO R CURRENT (mA) I C - COLLECTO R CURRENT (m A)

Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA)

10
VCB = 45V

0.1
25 50 75 100 125 150
T A - AMBIE NT TEMP ERATURE ( ° C)
 2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Input and Output Capacitance Contours of Constant Gain

vs Reverse Bias Voltage Bandwidth Product (f T )
5 10

V CE - COLLECTOR VOLTAGE (V)

f = 1.0 MHz
7 175 MHz
4
CAPACITANCE (pF)

5
3
C te 150 MHz
3
2
2 125 MHz
1 C ob 100 MHz
75 MHz

0 1
0 4 8 12 16 20 0.1 1 10 100
REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA)

Normalized Collector-Cutoff Current Wideband Noise Frequency

CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C

vs Ambient Temperature vs Source Resistance

°

1000 5
V CE = 5.0 V
NF - NOISE FIGURE (dB)

4 BANDWIDTH = 15.7 kHz

100
3
I C = 100 µA
3
I C = 30 µA
2
10

1
I C = 10 µA
1 0
25 50 75 100 125 150 1,000 2,000 5,000 10,000 20,000 50,000 100,000
T A - AMBIE NT TEMPERATURE ( °C) R S - SOURCE RESISTANCE (Ω )

Noise Figure vs Frequency Base-Emitter Saturation

10
Voltage vs Collector Current
I C = 200 µA, 1.00
R S = 10 kΩΩ
PD - POWER DISSIPATION (W)
NF - NOISE FIGURE (dB)

8
I C = 100 µA,
R S = 10 kΩΩ 0.75
6 TO-92
I C = 1.0 mA,
R S = 500 Ω 0.50
4
I C = 1.0 mA, SOT-23
Ω
R S = 5.0 kΩ
2 0.25
V CE = 5.0V

0 0.00
0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150
f - FREQUENCY (MHz) o
TEMPERATURE ( C)
 2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Contours of Constant Contours of Constant

Narrow Band Noise Figure Narrow Band Noise Figure
10,000 10,000

R S - SOURCE RESISTANCE ( Ω )
R S - SOURCE RESISTANCE ( Ω )

3.0 dB
5,000 5,000
4.0 dB
2.0 dB
2,000 2,000

6.0 dB 3.0 dB
1,000 1,000
4.0 dB
8.0 dB
500 V CE = 5.0 V 500
10 dB V CE = 5.0 V 6.0 dB
f = 100 Hz f = 1.0 kHz
BANDWIDTH BANDWIDTH 8.0 dB
200 12 dB 200
= 20 Hz = 200 Hz
14 dB
100 100
1 10 100 1,000 1 10 100 1,000
I C - COLLECTOR CURRENT ( µ A) I C- COLLECTOR CURRENT ( µ A)

Contours of Constant Contours of Constant

Narrow Band Noise Figure Narrow Band Noise Figure
10000 10000
R S - SOURCE RESISTANCE (Ω )

R S - SOURCE RESISTANCE (Ω )

5000 5000
1.0 dB

2000 2.0 dB
2.0 dB 2000
3.0 dB
1000 1000 3.0 dB
4.0 dB
500 VCE = 4.0 dB
V CE = 5.0V 500 5.0
6.0 dB 5.0V dB
f = 10kHz f = 1.0 MHz 6.0
200 BANDWIDTH 200 BANDWIDTH dB
8.0 dB 7.0 dB
= 2.0kHz = 200kHz 8.0 dB
100 100
1 10 100 1000 0.01 0.1 1 10
I C - COLLECTOR CURRENT ( µ A) I C - COLLECTOR CURRENT ( µ A)
 2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)

Typical Common Emitter Characteristics (f = 1.0 kHz)

Typical Common Emitter Characteristics Typical Common Emitter Characteristics

CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C)

CHARACTERISTI CS RELATI VE TO VALUE(VCE =5V)

1.4 1.5
h fe 1.4 h ie
1.3 VCE = 5.0V h re
1.3 f = 1.0kHz
h ie h fe
h oe 1.2 I C = 1.0mA
1.2 h oe
h re 1.1
1.1 1
h oe
h re 0.9
1 h ie h oe
0.8
I C = 1.0mA
0.7 h fe
0.9 f = 1.0kHz
h fe h re h ie
T A = 25°C 0.6
0.8 0.5
0 5 10 15 20 25 -100 -50 0 50 100 150
V CE - COLLECTOR VOLTAGE (V) T J - JUNCTIO N TEMP ERATURE (° C)

Typical Common Emitter Characteristics

CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)

100

f = 1.0kHz h oe

10
h ie and h re
h re

1 h oe 3
h fe
h ie h fe
0.1

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
I C - COLLECTOR CURRENT (mA)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
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EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4