Power Transistors

2SB941, 2SB941A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
Unit: mm
■ Features 10.0±0.2 4.2±0.2

0.7±0.1
● High forward current transfer ratio hFE which has satisfactory linearity
5.5±0.2 2.7±0.2
● Low collector to emitter saturation voltage VCE(sat)

4.2±0.2
● Full-pack package which can be installed to the heat sink with

7.5±0.2
one screw φ3.1±0.1

16.7±0.3
■ Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol Ratings Unit
1.3±0.2
Collector to 2SB941 –60

4.0
1.4±0.1
VCBO V

14.0±0.5
base voltage 2SB941A –80

Solder Dip
0.5 +0.2
–0.1

Collector to 2SB941 –60 0.8±0.1

VCEO V
emitter voltage 2SB941A –80
2.54±0.25
Emitter to base voltage VEBO –5 V
5.08±0.5
Peak collector current ICP –5 A 1 2 3

Collector current IC –3 A 1:Base

Collector power TC=25°C 35 2:Collector
PC W 3:Emitter
dissipation Ta=25°C 2 TO–220 Full Pack Package(a)
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SB941 VCE = –60V, VBE = 0 –200
ICES µA
current 2SB941A VCE = –80V, VBE = 0 –200
Collector cutoff 2SB941 VCE = –30V, IB = 0 –300
ICEO µA
current 2SB941A VCE = –60V, IB = 0 –300
Emitter cutoff current IEBO VEB = –5V, IC = 0 –1 mA
Collector to emitter 2SB941 –60
VCEO IC = –30mA, IB = 0 V
voltage 2SB941A –80
hFE1* VCE = –4V, IC = –1A 70 250
Forward current transfer ratio
hFE2 VCE = –4V, IC = –3A 10
Base to emitter voltage VBE VCE = –4V, IC = –3A –1.8 V
Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A –1.2 V
Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz 30 MHz
Turn-on time ton 0.5 µs
Storage time tstg IC = –1A, IB1 = – 0.1A, IB2 = 0.1A 1.2 µs
Fall time tf 0.3 µs

*h Rank classification
FE1

Rank Q P
Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the
hFE1 70 to 150 120 to 250
rank classification.

1
Power Transistors 2SB941, 2SB941A

PC — Ta IC — VCE IC — VBE
50 –6 –10
(1) TC=Ta TC=25˚C VCE=–4V
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

Al heat sink –5
40 (3) With a 50 × 50 × 2mm –8

Collector current IC (A)

Collector current IC (A)

Al heat sink IB=–100mA
(4) Without heat sink
(PC=2W) –4
–80mA
30 –6
–60mA 25˚C
–3
–40mA
TC=100˚C –25˚C
(1) –30mA
20 –4
–20mA
–2

10 –12mA –2
(2) –1
(3) –8mA
(4) –4mA
–16mA
0 0 0
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC fT — IC
–100 10000 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 VCE=–4V VCE=–5V

f=10MHz
Forward current transfer ratio hFE

–30 3000 3000 TC=25˚C

Transition frequency fT (MHz)

–10 1000 1000

25˚C
–3 300 TC=100˚C 300

–1 100 100
–25˚C

– 0.3 30 30
TC=100˚C
– 0.1 10 10
–25˚C
– 0.03 25˚C 3 3

– 0.01 1 1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

Area of safe operation (ASO) Rth(t) — t

–100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

–30
102 (1)
Collector current IC (A)

–10
ICP

–3 t=1ms (2)
IC 10
10ms
–1

DC 1
– 0.3

– 0.1
10–1
2SB941A
2SB941

– 0.03

– 0.01 10–2
–1 –3 –10 –30 –100 –300 –1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)

2
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