1.

For VGS=0V, drain current becomes constant when VDS exceeds

A. VDD
B. Zero volts
C. Cutoff
D. VP

Ans-D

2. CB amplifier has input resistance which is

A. Zero
B. Very low
C. Very high
D. 1

Ans-B

3. CB amplifier has a maximum current gain equal to

A. Infinity
B. Zero
C. 5
D. 1

Ans-D

4. Common-drain amplifier is similar to which BJT amplifier?

A. Common-emitter amplifier
B. Common-collector amplifier
C. Common-base amplifier
D. Common-gate amplifier

Ans-B

5. A BJT is a ________-controlled device.

A) current
B) voltage
C) power
D) resistance

Ans-A

6. The E-MOSFET is quite popular in ________ applications.

A) digital circuitry
B) high-frequency
C) buffering
D) All of the above

Ans-D

7. What is the range of gm for JFETs?

A) 1 µS to 10 µS
B) 100 µS to 1000 µS
C) 1000 µS to 5000 µS
D) 10000 µS to 100000 µS

Ans-C

8. What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET

circuit?
A) to create an open circuit for dc analysis
B) to isolate the dc biasing arrangement from the applied signal and load
C) to create a short-circuit equivalent for ac analysis
D) All of the above

Ans-D

9. Ratio of ac output voltage at collector to ac input voltage at base is called

A. Power gain
B. Current gain
C. Voltage gain
D. Energy gain

Ans-C

10. JFET operates with the

A. Forward-bias pn junction
B. Reverse-bias pn junction
C. Both forward and reverse
D. Neither forward nor reverse
 Ans-B

13-A field-effect transistor amplifier provides excellent voltage gain with the added feature of
a _____ input impedance.
A) low
B) medium
C) high
D) None of the above

Ans –C

16-_____ is the amplification factor in FET transistor amplifiers.

A) Zi
B) gm
C) ID
D) IG

Ans-B

17-Transconductance is the ratio of changes in _____.

A) ID to VGS
B) ID to VDS
C) VGS to IG
D) VGS to VDS

Ans-A

18-The transconductance gm _____ as the Q-point moves from Vp to IDSS

 A) decreases
 B) remains the same
 C) increases
 D) None of the above

Ans-C

19-The _____ configuration has the distinct disadvantage of requiring two dc voltage
sources.
 A) self-bias
 B) voltage-divider
 C) fixed-bias
 D) All of the above
 Ans-C

20-The input and output signals are in phase in a _____ configuration.

 A) fixed-bias
 B) source-follower
 C) voltage-divider
 D) self-bias

Ans-B

21- The input and output signals are 180º out of phase in a _____ configuration.
 A) source-follower
 B) common-gate
 C) common-drain
 D) voltage-divider

Ans-D

22. The _____ configuration has an input impedance, which is other than RG.
 A) common-source
 B) common-gate
 C) common-drain
 D) None of the above

Ans-B

23. The gate-to-source voltage VGS of a _____ must be larger than the threshold VGS(Th) for
the transistor to conduct.
 A) JFET
 B) D-type MOSFET
 C) E-type MOSFET
 D) None of the above

Ans-C

27-A JFET is also called …………… transistor

1. unipolar
2. bipolar
3. unijunction
4. none of the above
Answer : 1
28- A JFET is a ………… driven device
1. current
2. voltage
3. both current and voltage
4. none of the above
Answer : 2

29-The input impedance of a JFET is …………. that of an ordinary transistor

1. equal to
2. less than
3. more than
4. none of the above
Answer : 3