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ABSTRACT

The down scaling of conventional MOSFETs has led to an impending

power crisis and large leakage current. When the MOSFET dimension is

scaled down to nanometre (<100 nm), many physical barriers arise, like

short channel effects (SCEs). In order to improve the energy efficiency of

electronic circuits, reduce the leakage current and reduce the short channel

effects (SCEs), small swing switches are interesting candidates to replace or

complement the MOSFETs used today. There are several new devices are

available for low power applications due to their low off current and small

subthreshold swing.

In this paper, the surface potential and the drain current of the Tunnel

Field Effect Transistor (TFET) are being analyzed. The performance is also

being compared for the semiconductor devices such as Single Gate

MOSFET (SG-MOSFET), Double Gate MOSFET (DG-MOSFET), Single

Gate TFET (SG-TFET) and Double Gate TFET (DG-TFET).