TSV Wafer Requirement

Cu Via – 100 μm
diameter, 300 μm
Thermal Oxide – depth, No void
Cu RDL – 3 μm
200 nm Copper

Silicon Wafer - 4 inch , <100>

orientation, p-type, 425+5μm,
1-20 ohm cm, Ra < 50nm

Cu RDL – 3 μm

Please Quote for 10 wafers and 25

wafers